• Korean Journal of Materials Research
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• v.16 no.8
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• pp.479-484
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• 2006

Highly c-axis oriented poly-crystalline GaN with a dimension of $1{\sim}3\;{\mu}m$ was deposited on $c-Al_2O_3$ substrate by vapor transport epitaxy (VTE) method at the temperature range of $900{\sim}1150^{\circ}C$. XRD intensities from (00'2) plane of grown GaNs were increased with reaction conditions which indicate the improvement of the crystal quality. In the PL spectra measured at 10 K, the spectrum composed with the neutral-donor bound exciton-related emission at 3.47 eV, crystal defect-related emission band at 3.42 eV and with its phonon replicas. The fact that intensity of $I_2$ were increased and FWHM were decreased with growth conditions means that the quality of GaN crystals were improved. With this simple VTE technology, we confirm that the GaNs were simply deposited on sapphire substrate and crystal quality related to optical properties of GaN grown by VTE were relatively good. PL emission without deep level emission in spite of polycrystalline structure can be applicable to the fabrication of large area and low cost optical devices using poly-GaN grown by VTE.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.10
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• pp.1318-1326
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• 2001

The evaporation heat transfer coefficient and pressure drop for refrigerant R-22 flowing in the plate and shell heat exchanger were investigated experimentally in this study. Two vertical counterflow channels were farmed in the exchanger by three plates of commercial geometry with a corrugated trapezoid shape of a chevron angel of 45 ° Upflow boiling of refrigerant R-22 in one channel receives heat from the hot downf1ow of water in the other channel. The effects of the mean vapor quality, mass flux, heat flux and pressure of R-22 on the evaporation heat transfer and pressure drop were explored. The quality change of R-22 between the inlet and outlet of the refrigerant channel ranges from 0.03 to 0.05. The present data showed that both the evaporation heat transfer coefficient and pressure drop increase with the vapor quality. At a higher mass flux, the evaporation heat transfer coefficient and pressure drop are higher for the entire range of the vapor quality Raising the imposed wall heat flux was found to slightly improve the heat transfer, while at a higher refrigerant pressure, both the heat transfer and pressure drop are slightly lower.

• Proceedings of the KSME Conference
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• 2001.11b
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• pp.248-253
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• 2001

An experiment was carried out to investigate the characteristics of the evaporation heat transfer for refrigerant R-134a flowing in a plate and shell heat exchanger. The data are useful in designing more compact and effective evaporators for various refrigeration and air conditioning systems. Two vertical counterflow channels were formed in the exchanger. The R-134a flows up in one channel exchanging heat with the hot water flowing down in the other channel. The effects of the average heat flux, mass flux, saturation temperature and vapor quality were examined in detail. The present data show that the evaporation heat transfer coefficient increases with the vapor quality. A rise in the refrigerant mass flux causes an increase in the $h_r$ value. A rise in the average imposed heat flux causes an increase in the $h_r$, value at the low quality. Finally, at a higer refrigerant saturation temperature the $h_r$, value is found to be lower.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.433-433
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• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Journal of Industrial Technology
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• v.35
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• pp.89-94
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• 2015

Graphene is a carbon-based two dimensional honeycomb lattice with monoatomic thickness and has attracted much attention due to its superior mechanical, electronic, and physical properties. Here, we present a synthesis of high quality graphene on Pt substrate using a chemical vapor deposition (CVD). We optimized synthesis condition with various parameters such as synthesis temperature, time, and cooling rate. Based on the results, we concluded that graphene synthesis is driven by mainly carbon adsorption on surface rather than precipitation of carbon which is dominant in other metal substrate. In addition, Pt substrate can be repeatedly used several times with high quality graphene.

• Journal of Power System Engineering
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• v.16 no.4
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• pp.37-43
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• 2012

This paper performed experimental research in order to measure boiling heat transfer coefficient of water in microchannel with hydraulic diameter of $500{\mu}m$. Tests were conducted within the ranges of heat fluxes from 100 to 400 kW/$m^2$, vapor qualities from 0 to 0.2, and mass fluxes of 200, 400, and 600 kg/$m^2s$. From the experimental results, it was found that flow boiling heat transfer coefficient is not dependent on mass flux or vapor quality, but instead on heat flux to a certain degree. The measured data of heat transfer are compared to a few available correlations proposed for mini-channels. Among them, Sun and Mishima's correlation is found to predict the present data well, within the mean absolute error of 17.84%.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.9
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• pp.845-854
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• 2004

The evaporation heat transfer coefficient for R-l34a, R-407C (a mixture of 23wt% R-32, 25 wt% R-125, and 52 wt% R-l34a) and R-410A (a mixture of 50 wt% R-32 and 50 wt% R-125) flowing in the oblong shell and plate heat exchanger were investigated experimentally in this study. Four vertical counterflow channels were formed in the exchanger by four plates of commercial geometry with a corrugated sinusoid shape of a chevron angle of 45 degree. The effects of the mean vapor quality, mass flux, heat flux, and saturation temperature of different refrigerants on the evaporation heat transfer were explored in detail. Similar to the case of a Plate heat exchanger, even at a very low Reynolds number, the flow in the oblong shell and plate heat exchanger remains turbulent. It is found that the evaporation heat transfer coefficient in the plates is much higher than that in circular pipes. The present data show that the evaporation heat transfer coefficients of all refrigerants increase with the vapor quality. At a higher mass flux h, is higher than for the entire range of the vapor quality. Raising the imposed wall heat flux was found to slightly improve h$_{r}$, while h$_{r}$ is found to be lower at a higher refrigerant saturation temperature. A comparison of the performance of the various refrigerants reveals that R-410A has the highest heat transfer performance followed by R-l34a, and R-407C had the lowest performance of the refrigerants tested. Based on the present data, empirical correlations of the evaporation heat transfer coefficient were proposed.sed.

• Journal of Korean Society for Atmospheric Environment
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• v.29 no.6
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• pp.801-810
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• 2013

A field study was conducted to evaluate air quality from gas stations with and without Stage II vapor recovery systems that are currently used to reduce VOCs. The THC and VOCs levels were monitored for the test at three locations (inside office, around refueling area, site boundary) from a total of five gas stations. The results showed a considerable reduction in THC concentration which ranged from 48.7% to 81.8% with and without the operation of the Stage II VRS. Acoording to our comparative analysis, BTEX and other 19 VOCs levels were also significantly reduced with Stage II vapor recovery systems.

• Proceedings of the SAREK Conference
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• 2008.06a
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• pp.754-757
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• 2008

To maintain the indoor air quality, many ventilation systems and technologies have been developed in the highly insulated and air tight buildings. In this study, a porous construction material, which is applicable to passive ventilation system, is developed and measured the performances of the permeability and the resistance of water vapor, and the dust collection efficiency. The average coefficient of water vapor permeability shows $3.6\;g/m^2{\cdot}h{\cdot}mmHg$, which is slightly higher than Hanji ($2.4{\sim}3.2\;g/m^2{\cdot}h{\cdot}mmHg$) and the average water vapor resistance factor shows $0.303\;g/m^2{\cdot}h{\cdot}mmHg/g$, which is slightly smaller than Hanji($0.309{\sim}0.315\;g/m^2{\cdot}h{\cdot}mmHg/g$). The pressure drop of the porous construction material is smaller than the HEPA filter and the minimum dust collection efficiency shows 82.8% in the range of $2{\sim}9\;cm/s$.

• Applied Microscopy
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• v.47 no.1
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• pp.13-18
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• 2017

High-quality graphene was synthesized on Cu foil and $Fe_2O_3$ film using $CH_4$ gas via inductively-coupled plasma chemical vapor deposition (ICPCVD). The graphene film was formed on $Fe_2O_3$ at a temperature as low as $700^{\circ}C$. Few-layer graphene was formed within a few seconds and 1 min on Cu and $Fe_2O_3$, respectively. With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer. Moreover, the crystal quality of graphene was constantly enhanced. Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.