• 제목/요약/키워드: Vanadium oxide

검색결과 165건 처리시간 0.035초

Fabrication, Optoelectronic and Photocatalytic Properties of Some Composite Oxide Nanostructures

  • Zou, C.W.;Gao, W.
    • Transactions on Electrical and Electronic Materials
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    • 제11권1호
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    • pp.1-10
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    • 2010
  • This is an overview paper reporting our most recent work on processing and microstructure of nano-structured oxides and their photoluminescence and photo-catalysis properties. Zinc oxide and related transition metal oxides such as vanadium pentoxide and titanium dioxide were produced by a combination of magnetron sputtering, hydrothermal growth and atmosphere controlled heat treatment. Special morphology and microstructure were created including nanorods arrays, core-brushes, nano-lollipops and multilayers with very large surface area. These structures showed special properties such as much enhanced photoluminescence and chemical reactivity. The photo-catalytic properties have also been promoted significantly. It is believed that two factors contributed to the high reactivity: the large surface area and the interaction between different oxides. The transition metal oxides with different band gaps have much enhanced photoluminescence under laser stimulation. Use of these complex oxide structures as electrodes can also improve the energy conversion efficiency of solar cells. The mixed oxide complex may provide a promising way to high-efficiency photo emitting materials and photo-catalysts.

스퍼터된 바나듐 산화막의 구조적 특성에 미치는 진공 어닐링의 효과 (Effects of Vacuum Annealing on the Structural Properties of Sputtered Vanadium Oxide Thin Films)

  • 황인수;최복길;최창규;권광호;김성진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.70-73
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    • 2002
  • Thin films of vanadium oxide($VO_{x}$) have been deposited by r.f. magnetron sputtering from $V_{2}O_{5}$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure, chemical composition, molecular structure and optical properties of films sputter-deposited under different oxygen gas pressures and in-situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD. RBS, FTlR and optical absorption measurements. The films as-deposited are amorphous and those annealed for time longer than 4h are polycrystalline. $V_{2}O_{5}$ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric $V_{2}O_{5}$. When annealed at $400^{\circ}C$, the as-deposited films are reduced to a lower oxide. It is observed that the oxygen atoms located on the V-O plane of $V_{2}O_{5}$ layer participate more readily in the oxidation and reduction process. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly between 400 and 550nm.

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A new fabrication process of vanadium oxides($VO_{x}$) thin films showing high TCR and low resistance for uncooled IR detectors

  • Han, Yong-Hee;Kang, Ho-Kwan;Moon, Sung-Uk;Oh, Myung-Hwan;Choi, In-Hoon
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.558-561
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    • 2001
  • Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

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A new fabrication process of vanadium oxides($VO_{x}$) thin films showing high TCR and low resistance for uncooled IR detectors

  • Han, Yong-Hee;Kang, Ho-Kwan;Moon, Sung-Uk;Oh, Myung-Hwan;Park, In-Hoon
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.558-561
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    • 2001
  • Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

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Dehydrogenation of Ethylbenzene with Carbon Dioxide as Soft Oxidant over Supported Vanadium-Antimony Oxide Catalyst

  • Hong, Do-Young;Vislovskiy, Vladislav P.;Park, Sang-Eon;Park, Min-Seok;Yoo, Jin-S.;Chang, Jong-San
    • Bulletin of the Korean Chemical Society
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    • 제26권11호
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    • pp.1743-1748
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    • 2005
  • This work presents that carbon dioxide, which is a main contributor to the global warming effect, could be utilized as a selective oxidant in the oxidative dehydrogenation of ethylbenzene. The dehydrogenation of ethylbenzene over alumina-supported vanadium-antimony oxide catalyst has been studied under different atmospheres such as inert nitrogen, steam, oxygen or carbon dioxide as diluent or oxidant. Among them, the addition of carbon dioxide gave the highest styrene yield (up to 82%) and styrene selectivity (up to 97%) along with stable activity. Carbon dioxide could play a beneficial role of a selective oxidant in the improvement of the catalytic behavior through the oxidative pathway.

TiAl합금의 고온산화에 미치는 V효과 (Effect of V on High Temperature Oxidation of TiAl Alloy)

  • 장유동;;이동복
    • 한국표면공학회지
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    • 제36권4호
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    • pp.329-333
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    • 2003
  • The high-temperature oxidation behavior of Ti39Al-10V alloy that consisted primarily of $\beta$-Ti, ${\gamma}$-TiAl, and $\alpha_2$ $-Ti_3$Al phases was studied. The relatively thick and porous oxide scales formed consisted primarily of an outermost, thin TiO$_2$ layer, and an outer, thin $Al_2$$O_3$-rich layer, and an inner, very thick (TiO$_2$, $Al_2$$O_3$) mixed layer. Vanadium was present uniformly throughout the oxide scale. The formation and subsequent evaporation of V-oxides such as VO, $VO_2$, and $V_2$O$_{5}$ deteriorated oxidation resistance and scale adherence of the TiAl alloy significantly.y.

볼로메터용 바나듐-텅스텐 산화물로 표면 미세가공한 비냉각 적외선 감지기의 특성

  • 한용희;김근테;이승훈;신현준;문성욱;최인훈
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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    • pp.124-128
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    • 2005
  • To produce a highly sensitive uncooled microbolometer, the development of a high-performance thermometric material is essential. In this work, amorphous vanadium-tungsten oxide was developed as a thermometric material at a low temperature of $300^{\circ}C$, and the microbolometer, coupled with the material, was designed and fabricated using surface micromachining technology. The vanadium-tungsten oxide showed good properties for application to the microbolometer, Such as a high temperature coefficient of resistance of over -4.0 $\%$/K and good compatibility with the surface micromachining and integrated circuit fabrication process due to its low fabrication temperature. As a result, the uncooled microbolometer could be fabricated with high detectivity over $1.0\;{\times}\;10^9\;cmHz^{1/2}/W$ at a bias current of $7.5\;{\mu}A$ and a chopper frequency of 10-20 Hz

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