• 한국재료학회지
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• 제27권8호
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• pp.416-421
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• 2017

V-substituted $SrTiO_3$ thermoelectric oxide materials were fabricated by the conventional solid state reaction method. From X-ray diffraction pattern analysis, it can be clearly seen that almost every vanadium atom incorporated into the $SrTiO_3$ provided charge carriers. The electrical conductivity ${\sigma}$, Seebeck coefficient S, and thermal conductivity k were investigated in a high temperature regime above 1000 K. The addition of vanadium significantly reduced the thermal conductivity and enhanced the Seebeck coefficient, as well as the electrical conductivity, thus enhancing the ZT value. A maximum ZT value of 0.084 at 673 K was observed for the sample with 1.0 mole% of vanadium substitution. In this study, the reason for the enhanced thermoelectric properties via vanadium addition was also investigated.

• 한국초전도ㆍ저온공학회논문지
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• 제19권1호
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• pp.17-21
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• 2017

Vanadium slags is a kind of vanadiferous solid waste from steelmaking process. It not only occupies land, pollutes environment, but also leads to waste of resources. Based on the difference of magnetic susceptibility of different particles caused by their chemical and physical properties from vanadium slag, a new technology, superconducting high gradient magnetic separation was investigated for separation and extraction of valuable substances from vanadium slag. The magnetic concentrate was obtained under optimal parameters, i.e., a particle size -200 mesh, a magnetic flux density of 0.8 T, a slurry concentration of 5 g/L, an amount of steel wools of 25 g and a slurry flow velocity of 2 L/min. The content of $Fe_2O_3$ in concentrate could be increased from 39.6% to 55.0% and $V_2O_5$ from 2.5% to 4.0%, respectively. The recovery rate is up to 42.9%, and the vanadium slag has been effectively reused.

• 환경위생공학
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• 제24권3호
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• pp.55-61
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• 2009

Fe-V is used as raw material of vanadium in the steel making process. The purpose of this study, Fe-V is to replace the $VO_{4}$. So the distribution behavior of vanadium in $VO_{4}$ of the steel investigated. The distribution ratio of the vanadium where potential of the free oxygen ion will increase in slag decreased. When CaO and MgO content which is a basic oxide from CaO-$SiO_2$-FetO-MgOsatd. slag increases, S distribution ratio increases. CaO-$SiO_2$-FetO-MgOsatd. slag better than CaO-$SiO_2$-$Al_2O_3$-MgO slag is the recovery of vanadum and desulfurization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.729-732
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• 2001

In this study, the effect of oxygen partial pressure on the electrical properties of vanadium oxide(VO$_{x}$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from V$_2$O$_{5}$ target in a gas mixture of argon and oxygen. The oxygen partial pressure ratio is changed from 0% to 8%. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.ure.

• 한국표면공학회지
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• 제30권2호
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• pp.121-127
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• 1997

Vanadium tungsten oxide thin films were formed by RF magnetron sputtering and the effects of tungsten addition on the crystallinity and on the electrochemical behavior were investigated. X-ray analysis revealed that amorphized films could be obtained by tungase addition. In order to investigate the electrochemical behavior of the vanadium tungsten oxide films, electrochemical insertion and extraction of lithium were out in 1m $LiCIO_4$-PC-DME electrolyte using litium metal as a counter electrode. When the tungsten was added to the $V_2O_5$ films, cycling reversibility was considerably improved. Electrochemical test showed the cell capacity of about $70\mu\;Ah/\textrm{cm}^2-\mu\textrm{m}$ when the amount of additive tungseten reached 30 atomic percent. No appreciable degradation of the cell capacity could be observed after hundred cycles of insertion and extration od Li.

• Bulletin of the Korean Chemical Society
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• 제24권3호
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• pp.311-317
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• 2003

Vanadium oxides supported on zirconia and modified with MoO₃were prepared by adding Zr(OH)₄powder into a mixed aqueous solution of ammonium metavanadate and ammonium molybdate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using FTIR, Raman spectroscopy and solid-state $^{51}V$ NMR. In the case of a calcination temperature of 773 K, for samples containing low loading of $V_2O_5$, below 15 wt %, vanadium oxide was in a highly dispersed state, while for samples containing high loading of $V_2O_5$, equal to or above 15 wt %, vanadium oxide was well crystallized because the $V_2O_5$ loading exceeded the formation of a monolayer on the surface of $ZrO_2$. The $ZrV_2O_7$ compound was formed through the reaction of $V_2O_5\;and\;ZrO_2$ at 873 K and the compound decomposed into $V_2O_5\;and\;ZrO_2$ at 1073 K, which were confirmed by FTIR spectroscopy and solid-state $^{51}V$ NMR. IR spectroscopic studies of ammonia adsorbed on $V_2O_5-MoO_3/ZrO_2$ showed the presence of both Lewis and Bronsted acids.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.159-162
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• 1999

All solid state thin film micro-batteries consisting of lithium metal anode, an amorphous LiPON electrolyte and cathode of vanadium oxide have been fabricated and characterized, which were fabricated with cell structure of Li/LiPON/V$_2$O$\sub$5/Pt. The vanadium oxide thin films were formed by d.c. reactive sputtering on Pt current collector. After deposition of vanadium oxide films, in-situ growths of lithium phosphorus oxynitride film were conducted by r.f. sputtering of Li$_3$PO$_4$ target in mixture gas of N$_2$ and O$_2$. The pure metal lithium film was deposited by thermal evaporation on thin film LiPON electrolyte. The cell capacity was about 45${\mu}$Ah/$\textrm{cm}^2$ $\mu\textrm{m}$ after 200 cycle. No appreciable degradation of the cell capacity could be observed after 50 cycles .

• 공업화학
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• 제34권6호
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• pp.584-589
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• 2023

지지체 TiO₂가 다른 VOx/TiO₂ 촉매들에 대해 특성 분석과 SCR 반응을 수행하였다. Sigma Aldrich 사의 anatase TiO₂와 TiOCl₂와 TTIP를 출발 원료로 제조한 TiO₂를 사용하여 VOx/TiO₂ 촉매를 제조하고, 이를 각각 VS, VC, VP로 표시하였다. VS 시료의 비표면적은 VC 및 VP 시료 대비 1/10 이하로서 바나듐 산화물의 분산성은 상대적으로 낮았다. XPS 분석 결과, 촉매 표면의 흡착 산소의 비는 Ti³⁺가 존재하는 VS와 VP 시료가 VC 시료에 비해 높았다. 또한 VC와 VP시료에서 바나듐은 바나듐 산화물의 분산성과 관련하여 주로 V⁴⁺와 V³⁺ 상태로 존재하였다. 250 ℃ 이하 NH₃-SCR 활성에는 바나듐 산화물의 분산성보다는 흡착 산소 양이 더 기여한 반면, 300 ℃ 이상 활성에는 바나듐 산화물의 분산성이 더 기여하는 것으로 판단되었다. 촉매들의 fast SCR 활성은 3 시료 모두 NO₂/NOx = 0.5에서 가장 높았으며, VS < VC < VP 시료 순으로 나타났다. 빠른 NH₃-SCR 촉매 활성에는 촉매의 바나듐 산화물의 분산성이 영향을 크게 미친다고 판단되었다.

• 한국분말재료학회지
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• 제26권4호
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• pp.305-310
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• 2019

In the present work, spheroidization of angular vanadium powders using a radio frequency (RF) thermal plasma process is investigated. Initially, angular vanadium powders are spheroidized successfully at an average particle size of $100{\mu}m$ using the RF-plasma process. It is difficult to avoid oxide layer formation on the surface of vanadium powder during the RF-plasma process. Titanium/vanadium/stainless steel functionally graded materials are manufactured with vanadium as the interlayer. Vanadium intermediate layers are deposited using both angular and spheroidized vanadium powders. Then, 17-4PH stainless steel is successfully deposited on the vanadium interlayer made from the angular powder. However, on the surface of the vanadium interlayer made from the spheroidized powder, delamination of 17-4PH occurs during deposition. The main cause of this phenomenon is presumed to be the high thickness of the vanadium interlayer and the relatively high level of surface oxidation of the interlayer.

• 전기화학회지
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• 제17권2호
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• pp.94-102
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• 2014

바나듐 레독스 흐름 전지 (Vanadium redox flow battery, VRB) 시스템 운전 중 양이온 교환막을 통한 바나듐이온의 투과로 인하여 성능이 저하되는 문제점을 보완하기 위해 판상형태의 탄소물질인 산화그라핀 (Graphene Oxide, GO)을 기존에 사용하였던 양이온 교환막인 Nafion 양이온 교환막 표면에 열압착 방식으로 코팅하여 양이온 교환막 개선 및 VRB 성능 향상을 도모하였다. 개선된 양이온 교환막의 물리화학적 특성분석을 위하여 SEM (Scanning Electron Microscopy)분석, 이온 교환 용량, 수분 흡수 및 수소이온 전도도를 측정하였다. 산화그라핀층을 코팅한 결과, SEM 분석을 통해 양이온 교환막 표면에 약 $0.93{\mu}m$의 산화그라핀층이 형성된 것을 확인할 수 있었다. 산화그라핀을 코팅하여 개선된 양이온 교환막의 수소이온 전도도 측정 결과, 상용 양이온 교환막의 27% 수준으로 감소하였음을 확인하였으며, 동시에 바나듐이온 투과실험을 실시한 결과, 개선된 양이온 교환막의 바나듐이온 투과도가 기존 상용 양이온 교환막의 25% 이하 수준으로 감소하였음을 확인할 수 있었다. VRB 단위전지 성능실험을 실시하여 충-방전 특성을 분석한 결과, 산화그라핀을 코팅하여 개선된 양이온 교환막을 VRB 시스템에 적용하였을 경우, 바나듐이온의 투과도 감소로 인하여 쿨롱효율이 증가하였음을 확인할 수 있었고, 그로 인하여 전체적인 에너지효율이 상용막을 적용하였을 때 보다 증가하였음을 확인할 수 있었다. 따라서, 본 연구를 통해 양이온 교환막 표면에 판상형태의 탄소물질인 산화그라핀을 코팅하는 방법이 바나듐이온 투과도를 저하시키고 VRB의 시스템성능을 향상시킬 수 있는 효과적인 방법임을 제시할 수 있었다.