• Title/Summary/Keyword: Vanadium dioxide

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Study on Current Switching in Electronic Devices Based on Vanadium Dioxide Thin Films Using CO2 Laser (이산화탄소 레이저를 이용한 바나듐 이산화물 박막 전자 소자에서의 전류 스위칭에 관한 연구)

  • Kim, Jihoon;Lee, Yong Wook
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.30 no.1
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    • pp.1-7
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    • 2016
  • With a collimated $CO_2$ laser beam, the bidirectional current switching was realized in a two-terminal electronic device based on a highly resistive vanadium dioxide($VO_2$) thin film. A $VO_2$ thin film was grown on a $Al_2O_3$ substrate by a pulsed laser deposition method. For the fabrication of a two-terminal electronic device, the $VO_2$ thin film was etched by an ion beam-assisted milling method, and the $VO_2$ device, of which $VO_2$ patch width and electrode separation were 50 and $100{\mu}m$, respectively, was fabricated through a photolithographic method. A bias voltage range for stable bidirectional current switching was found by using the current-voltage property of the device measured in a current-controlled mode. The transient responses of bidirectionally switched currents were analyzed when the laser was modulated at a variety of pulse widths and repetition rates. A switching contrast was measured as ~3333, and rising and falling times were measured as ~39 and ~21ms, respectively.

Bidirectional Current Triggering in Two-Terminal Planar Device Based on Highly Resistive Vanadium Dioxide Thin Film Using 966nm Near Infrared Laser (966nm 근적외선 레이저를 이용한 고저항성 바나듐 이산화물 박막 기반 2단자 평면형 소자에서의 양방향 전류 트리거링)

  • Kim, Jihoon;Lee, Yong Wook
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.11
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    • pp.28-34
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    • 2015
  • By incorporating a 966nm near infrared laser, we demonstrated bidirectional current triggering of between 0 and 10mA in a two-terminal planar device based on a highly resistive vanadium dioxide ($VO_2$) thin film grown by a pulsed laser deposition method. A two-terminal planar device, which had an electrode separation of $100{\mu}m$ and a $50{\mu}m-wide$ $VO_2$ conducting layer, was fabricated through ion beam-assisted milling and photolithographic techniques. A bias voltage range for stable bidirectional current triggering was determined by investigating the current-voltage curves of the $VO_2-based$ device in a current-controlled mode. Bidirectional current triggering of up to 10mA was realized by directly illuminating the $VO_2$ film with a focused infrared laser beam, and the transient responses of triggered currents were analyzed when the laser was modulated at various pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as ~3571, and the rising and falling times were measured as ~40 and ~20ms, respectively.

Broadband Phase-change Metagrating Design for Efficient Active Reflection Steering

  • Kim, Sun-Je
    • Current Optics and Photonics
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    • v.5 no.2
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    • pp.134-140
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    • 2021
  • In this paper, I introduce a novel design method of a high performance nanophotonic beam deflector providing broadband operation, large active tunability, and signal efficiency, simultaneously. By combining thermo-optically tunable vanadium dioxide nano-ridges and a metallic mirror, reconfigurable local optical phase of reflected diffraction beams can be engineered in a desired manner over broad bandwidth. The active metagrating deflectors are systematically designed for tunable deflection of reflection beams according to the thermal phase-change of vanadium dioxide nano-ridges. Moreover, by multiplexing the phase-change supercells, a robust design of actively tunable beam splitter is also verified numerically. It is expected that the proposed intuitive and simple design method would contribute to development of next-generation optical interconnects and spatial light modulators with high performances. The author also envisions that this study would be fruitful for modern holographic displays and three-dimensional depth sensing technologies.

Hydrothermal Synthesis of Vanadium (IV) Dioxide and its Thermochromic Property (바나듐(IV) 이산화물의 수열합성 및 이의 열변색 특성)

  • Lee, Hun Dong;Son, Dae Hee;Lee, Won Ki;Jin, Young Eup;Lee, Gun-Dae;Park, Seong Soo
    • Applied Chemistry for Engineering
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    • v.26 no.4
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    • pp.427-431
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    • 2015
  • In this study, vanadium dioxide ($VO_2$) powder well known as a thermochromic material was prepared from $V_2O_5$ powder and oxalic acid dihydrate by hydrothermal and calcination process at various conditions. The chemical bonding and crystal structures in addition to thermal property of samples were determined using FE-SEM, XRD, XPS, and DSC. Also, spectroscopic and thermochromic properties of film samples were analyzed by UV-Vis-NIR spectroscopy after the thin film was prepared from the sol dispersed with the size of below 50 nm by the ball-milling of powder sample. With increasing the calcination temperature, the phase transition temperature of samples increased from $40^{\circ}C$ to $70^{\circ}C$ due to the increase of particle size.

Bidirectional Current Triggering in Two-Terminal Planar Device Based on Vanadium Dioxide Thin Film Using 1550nm Laser Diode (1550nm 레이저 다이오드를 이용한 바나듐 이산화물 박막 기반 2단자 평면형 소자에서의 양방향 전류 트리거링)

  • Lee, Yong Wook
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.4
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    • pp.11-17
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    • 2015
  • While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

A Study on the Effect of Graphene Substrate for Growth of Vanadium Dioxide Nanostructures (이산화바나듐 나노구조물의 성장에서 그래핀 기판의 영향에 관한 연구)

  • Kim, Ki-Chul
    • Journal of Convergence for Information Technology
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    • v.8 no.5
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    • pp.95-100
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    • 2018
  • The metal oxide/graphene nanocomposites are promising functional materials for high capacitive electrode material of secondary batteries, and high sensitive material of high performance gas sensors. In this study, vanadium dioxide($VO_2$) nanostructrures were grown on CVD graphene which was synthesized on Cu foil by thermal CVD, and exfoliated graphene which was exfoliated from highly oriented pyrolytic graphite(HOPG) using a vapor transport method. As results, $VO_2$ nanostructures on CVD graphene were grown preferential growth on abundant functional groups of graphene grain boundaries. The functional groups are served to nucleation site of $VO_2$ nanostructures. On the other hand, 2D & 3D $VO_2$ nanostructures were grown on exfoliated graphene due to uniformly distributed functional groups on exfoliated graphene surface. The characteristics of morphology controlled growth of $VO_2$/graphene nanocomposites would be applied to fabrication process for high capacitive electrode materials of secondary batteries, and high sensitive materials of gas sensors.

A temperature sensor using single phase-vanadium dioxide thin films (single phase-vanadium dioxide 박막을 이용한 온도센서에 관한 연구)

  • Kim, Ji-Hong;Hong, Sung-Min;Kwak, Yeon-Hwa;Park, Soon-Seob;Hwang, Hak-In;Moon, Byung-Moo
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.109-110
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    • 2006
  • In bio applications, high temperature coefficient of resistance (TCR) at $30^{\circ}C{\sim}40^{\circ}C$ is especially important for a temperature sensor. In this work, single phase-vanadium dioxide ($VO_2$) thin films for temperature sensor were fabricated by reactive DC magnetron sputtering and post-annealing method. VOx thin films deposited by reactive sputtering in a controlled $Ar/O_2$ atmosphere can be transformed into single phase-$VO_2$ films by post-annealing in $N_2$ atmosphere. The grown $VO_2$ thin films have a moderate resistance at room temperature and very high TCR at room temperature and transition temperature, respectively 2.88%/K and 15.8%/K. A detailed structural characterization is performed by SEM, XRD and RBS. SEM morphology image indicates that grains of fabricated $VO_2$films are homogeneous and ball-like in shape. A fact that the films contain only single phase-$VO_2$ is obtained by XRD and RBS analysis. After deposition, the sensors were fabricated by micromachining technology. Silicon nitride membrane and black nickel were used for a thermal isolation structure and absorption layer. In the vicinity of room temperature, the TCR of sensors was enough high to apply for bio sensors.

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Growth of Two-Dimensional Nanostrcutured VO2 on Graphene Nanosheets (그래핀 나노 시트 위에 2차원 나노구조를 갖는 VO2의 성장)

  • Oh, Su-Ar;Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.9
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    • pp.502-507
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    • 2016
  • Vanadium dioxide, $VO_2$, is a thermochromic material that exhibits a reversible metal-insulator phase transition at $68^{\circ}C$, which accompanies rapid changes in the optical and electronic properties. To decrease the transition temperature around room temperature, a number of studies have been performed. The phase transition temperature of 1D nanowire $VO_2$ with a 100 nm diameter was reported to be approximately $29^{\circ}C$. In this study, 1D or 2D nanostructured $VO_2$ was grown using the vapor transport method. Vanadium dioxide has a different morphology with the same growth conditions for different substrates. The 1D nanowires $VO_2$ were grown on a Si substrate ($Si{\setminus}SiO_2$(300 nm), whereas the 2D & 3D nanostructured $VO_2$ were grown on an exfoliated graphene nanosheet. The crystallographic properties of the 1D or 2D & 3D nanostructured $VO_2$, which were grown by thermal CVD, and exfoliated-transferred graphene nanosheets on a Si wafer which was used as substrate for the vanadium oxide nanostructures, were analyzed by Raman spectroscopy. The as-grown vanadium oxide nanostructures have a $VO_2$ phase, which are confirmed by Raman spectroscopy.