• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.157-157
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• 2003

수평 전기로에서 CdIn2Te4 다결정을 용융법으로 합성하고 Bridgman법으로 tetragonal structure의 c축에 평행한 CdIn2Te4 단결정을 성장시켰다. c축에 평행한 시료의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 spectra에 의해 band gap Eg(T)는 varshni공식에 따라 계산한 결과 1.4753eV-(7.78$\times$$10^{-3}$eV/K)T$^2$/(T+2155K)임을 확인하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.01$\times$$10^{16}$ /㎤, 219 $\textrm{cm}^2$/V.S였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting $\Delta$cr값이 0.2704 eV이며 spin-orbit $\Delta$so 값은 0,1465 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n=1일때 Al-, Bl-와 Cl-exciton 봉우리임을 알았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.695-695
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• 2013

양단간의 온도차를 이용한 열전 발전 및 펠티어 효과를 이용한 열전냉각 소자는 전기와 열의 직접적인 변환으로 활용도가 높아 차세대 에너지 연구 분야로 각광 받고 있다. 열전 소자의 성능 척도는 성능지수 Z (Figure of Merit)로 나타내며, Seebeck 계수 및 전기전도도, 열전도도의 관계로 주어지게 되고 재료의 물성치가 소자의 성능에 큰 영향을 주게 된다. 따라서, 열전재료의 성능을 높이는 연구가 활발히 진행되어 왔으며, 최근 에너지 밴드 구조를 조절하여 Seebeck계수의 향상을 시도하는 연구가 많이 진행되고 있다. 이는 페르미 레벨근처에 도핑 된 원자들이 Density of states에 추가로 준위를 형성하여 Seebeck 계수 향상을 가능하게 한다. 본 연구에서는 상온용 열전 물질인 $Bi_2Te_3$에 Iodine 도핑을 통한 열전 성능 변화를 고찰하고자 한다. $Bi_2Te_3$는 유기금속 화합물 증착 방법으로 성장하였고 기판으로 $4^{\circ}$기울어진 GaAs를 사용 하였다. 전기적 특성은 Seebeck 측정 및 Van der Pauw법에 의한 Hall measurement 방법으로 분석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.62-65
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• 1997

Indium nitride thin films were deposited on Si(100) substrates by reactive sputtering method. The metallic indium target was sputtered by nitrogen gas with rf sputtering equipment. The surface morphology and cross-section of the InN thin films were investigated by scanning electron microscopy. The crystal orientations were investigated by X-ray diffraction and the Hall effect were measured with van der Pauw method. The indium nitride thin film showed high Hall mobility(215$\textrm{cm}^2$/V-sec) at 5mTorr total pressure and rf power 60W.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1057-1059
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• 2002

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.75-76
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• 2006

olycrystailine CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. We measured also spectral response, sensitivity($\gamma$), maximum allowable power dissipation and response time on these samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.143-144
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_2S_4$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_2S_4$ thin films measured with Hall effect by van der Pauw method are $8.51\times10^{17}$ electron/$cm^{-3}$, 291 $cm^2$/v-s at 293 K, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.302-303
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• 2008

Nominally undoped (intrinsic) ZnO thin films were deposited by magnetron sputtering system with utilization of substrate bias on silicon at $450^{\circ}C$. Oxygen gas was selected as sputtering gas. The deposited thins were evaluated with X-ray diffraction (XRD) for their microstructure analysis and Hall effect in Van der Pauw configuration for their electrical property. The XRD shows that the magnitude and polarity of substrate bias significantly influence the microstructure and electrical properties.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.1-5
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• 2000

Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

• 한국표면공학회지
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• 제29권6호
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• pp.876-879
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• 1996

The effect of oxygen vacancy and Sn donor on carrier density for Indium Tin oxide (ITO) and Indium oxide (InO) films has been investigated. Hot-cathode Penning discharge sputtering (HC-PDS) in the mixed gasses of argon and oxygen was applied to fabricate the ITO and InO films. Density of oxygen vacancy was estimated using a high-energy ion beam technique. The electrical properties of the films such as resistivity, carrier density and mobility were estimated by Van der Pauw method. The doping efficiency of oxygen vacancy could be obtained from the relationship between oxygen vacancy and carrier density. The doping efficiency of oxygen vacancy for ITO films resulted in a quite small value. Comparing the doping efficiencies of ITO and InO films, the effect of Sn donor on carrier density was also discussed.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements