• 멤브레인
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• 제5권2호
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• pp.89-96
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• 1995

Azobenzene기를 가지는 인산형 양친매성 화합물의 기/액 계면에 있어서으 단분자막 거동이 $\pi-A$ 곡선 및 표면흡수스펙트라로 검토되었다. 분자간의 강한 수소결합력을 가지는 이 화합물들은 수면에 전개 후 즉시 결정화하여 단분자막 domain들을 형성한 회합체 흡수스펙트라를 나타내었다. 그러나 subphase의 조건(분자량이 큰 유가염의 첨가 및 pH의 상승)을 변화시킴에 의해 결정 domain 형성을 제어하는 것이 가능하였다. 한편, 금속이온 첨가는 인산령 양친매성 단분자막의 분재배향상태를 변화시켰다. 금속이온의 전하가 높을수록 ($1\leq2$ < 3 < 4 가), azobenzene기를 가지는 양친매성 화합물의 분자상태가 tilt된 배향성에 기인하는 장파장으로 이동한 흡수극대를 나타내었다. 이것은 서로 다른 전하를 가진 금속이온을 흡착시킴에 의해 단분자막의 분자배향성을 변화시켜, 단분자막의 집합상태 제어 가능성을 시사한다.

• 한국세라믹학회지
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• 제51권6호
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• pp.527-532
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• 2014

$0.97Bi_{0.5+x}(Na_{0.78}K_{0.22})_{0.5-3x}TiO_3-0.03LaFeO_3$ lead-free piezoelectric ceramics were fabricated by a solid state reaction method. $LaFeO_3$ additives were added to $Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3$ for volatile compensation of bismuth and sodium ions in the sintering process. To create A-site vacancies, the mole ratio and charge valence of A-site ions ($Bi^{3+}$, $Na^+$ and $K^+$) were controlled. The improved piezoelectric properties were observed by addition of $LaFeO_3$ and control of A-site vacancies. In particular, a $d_{33}^*(S_{max}/E_{max})$ value of 614pm/V and an electric field induced strain of 0.33% was observed in $0.97Bi_{0.505}(Na_{0.78}K_{0.22})_{0.485}TiO_3-0.03LaFeO_3$ ceramic.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.167-168
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• 2007

$CdIn_2S_4$ (110) films were grown on semi-insulating GaAs (100) by a hot wall epitaxy method. Using photocurrent (PC) measurement, the PC spectra in the temperature range of 30 and 10 K appeared as three peaks in the short wavelength region. It was found that three peaks, A-, B-, and C-excitons, correspond to the intrinsic transition from the valence band states of ${\Gamma}_4(z),\;{\Gamma}_5(x),\;and\;{\Gamma}_5(y)$ to the exciton below the conduction band state of ${\Gamma}_1(s)$, respectively. The 0.122 eV crystal field splitting and the 0.017 eV spin orbit splitting were obtained. Thus, the temperature dependence of the optical band gap obtained from the PC measurement was well described by $E_g$(T)=2.7116eV - $(7.65{\times}10^{-4}\;eV/K)T^2$/(425+T). But, the behavior of the PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. This phenomenon had ever been reported at a PC experiment on the bulk crystals grown by the Bridgman method. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Consequently, the trapping centers due to native defects in the $CdIn_2S_4$ film were suggested to be the causes of the decrease in the PC signal with decreasing temperature.

• Current Applied Physics
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• 제18권12호
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• pp.1577-1582
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• 2018

While controlling the cation contents in perovskite rare-earth nickelate thin films, a metal-to-insulator phase transition is reported. Systematic control of cation stoichiometry has been achieved by manipulating the irradiation of excimer laser in pulsed laser deposition. Two rare-earth nickelate bilayer thin-film heterostructures with the controlled cation stoichiometry (i.e. stoichiometric and Ni-excessive) have been fabricated. It is found that the Ni-excessive nickelate film is structurally less dense than the stoichiometric film, albeit both of them are epitaxial and coherent with respect to the underlying substrate. More interestingly, as a temperature decreases, a metal-to-insulator transition is only observed in the Ni-excessive nickelate films, which can be associated with the enhanced disproportionation of the Ni charge valence. Based on our theoretical results, possible origins (e.g. anti-site defects) of the low-temperature insulating state are discussed with the need of future work for deeper understanding. Our work can be utilized to realize unusual physical phenomena (e.g. metal-to-insulator phase transitions) in complex oxide films by manipulating the chemical stoichiometry in pulsed laser deposition.

• Asian Journal for Public Opinion Research
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• 제12권1호
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• pp.53-74
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• 2024

The proliferation of health misinformation gained momentum amidst the outbreak of the novel coronavirus disease 2019 (COVID-19). People stuck in their homes, without work pressure, regardless of health concerns towards personal, family, or peer groups, consistently demanded information. People became engaged with misinformation while attempting to find health information content. This study used the content analysis method and analyzed 1,154 misinformation stories from four prominent signatories of the International Fact-Checking Network during the pandemic. The study finds the five main categories of misinformation related to the COVID-19 pandemic. These are 1) the severity of the virus, 2) cure, prevention, and treatment, 3) myths and rumors about vaccines, 4) health authorities' guidelines, and 5) personal and social impacts. Various sub-categories supported the content characteristics of these categories. The study also analyzed the emotional valence of health misinformation. It was found that misinformation containing negative sentiments got higher engagement during the pandemic. Positive and neutral sentiment misinformation has less reach. Surprise, fear, and anger/aggressive emotions highly affected people during the pandemic; in general, people and social media users warning people to safeguard themselves from COVID-19 and creating a confusing state were found as the primary motivation behind the propagation of misinformation. The present study offers valuable perspectives on the mechanisms underlying the spread of health-related misinformation amidst the COVID-19 outbreak. It highlights the significance of discerning the accuracy of information and the feelings it conveys in minimizing the adverse effects on the well-being of public health.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• 대한화학회지
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• 제55권3호
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• pp.463-471
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• 2011

[ $N_2O_2$ ] 시프염기 리간드인 N,N'-bis(4-methoxysalicylidene) phenylendiamine(4-$CH_3O$-salphen)을 합성하였다. 분광광도법으로 4-$CH_3O$-salphen을 이용하여 수용액 중의 Fe(II)와 Fe(III)이온의 분리 정량실험을 위하여, 리간드 농도는 $4.0{\times}10^{-4}\;M$, DMF 용매와 물의 비율은 70/30(v/v), pH는 3.4~3.8 범위, 온도는 $55^{\circ}C$에서 1 시간 정도를 물 중탕하여 결과를 얻었다. 시료의 예비 산화 및 환원 전처리는 $5.0{\times}10^{-4}\;M$ 농도의 $H_2O_2$와 $NH_2OH{\cdot}HCl$을 사용하여 단일 원자가 상태의 시료를 만들어 사용하였다. 이때 Fe(II)와 Fe(III) 이온의 정량은 434 nm와 456 nm에서 흡광도를 측정하였다. 이상의 최적화된 실험조건을 이용하여 약수, 온천수, 바닷물 및 하수 처리장의 처리수를 채취하여 Fe(II)와 Fe(III) 이온을 각각 정량 분석한 결과는 측정 평균값이 표준 값에 대하여 2.00~6.90% 범위에서 잘 일치 하였고, 정량검출한계는 Fe(II)의 경우 27.9 ng/mL이었고, Fe(III)은 55.8 ng/mL이었다.

• 대한환경공학회지
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• 제30권7호
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• pp.729-734
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• 2008

높은 산화상태를 갖는 철화합물인 ferrate(Fe$^{6+}$)를 Cu(II)-EDTA가 오염된 폐수를 처리하는데 적용하였다. Fe(VI)는 3가 철염에 차아염소산을 가하여 습식 산화시키는 방법을 적용하여 제조하였으며 93% 이상의 순도를 얻을 수 있었다. 용액에서의 Fe(VI)의 안정성은 pH가 낮을수록 자체분해반응이 가속화됨으로써 감소하는 것으로 나타났다. 자외선-가시광선 분광광도계를 사용하여 Fe(VI)의 환원정도를 측정하였다. 실험실규모의 연속회분식 반응장치를 Cu(II)-EDTA 함유 폐수처리에 적용함으로서 Cu(II)-EDTA의 산화특성, Fe(III)에 대한 구리이온의 거동 특성 그리고 유기물의 제거능을 조사하였다. 연속처리를 위한 반응조 및 pH 조정조에서 총 구리의 제거는 체류시간 120분에서 각각 69% 및 75%로서 최대 제거율을 보였으며 체류시간 120분 경과 후 Cu(II)-EDTA의 비착물화 정도는 80% 이상을 보였다. 본 연구를 통하여 Fe(VI)를 다기능성 처리제로서 사용하여 Cu(II)와 EDTA가 함께 존재하는 폐수를 연속적으로 처리하는 공정을 개발하였다.

• 한국전기전자재료학회논문지
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• 제29권8호
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• pp.489-493
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• 2016

In this study, the effect of vanadium oxide ($V_2O_5$) content and pre-sintering atmosphere on sealing property of glass frit that consisted of $V_2O_5-BaO-ZnO-P_2O_5-TeO_2-CuO-Fe_2O_3-SeO_2$ was investigated by XPS (X-ray photoelectron spectroscopy). The content of V2O5 was changed to 15, 30, and 45 mol%, and the pre-sintering was carried out in air and $N_2$ condition, respectively. XPS analysis conducted before and after laser irradiation with identical sample. Before laser treatment, glass frits that were pre-sintered at air condition showed both $V^{4+}$ and $V^{5+}$, but the valence state was changed to $V^{5+}$ after laser irradiation when the glass frits contained 30 and 45 mol% $V_2O_5$; this change led to non-adhesive property. On the other hand, glass frits that were pre-sintered at $N_2$ condition exhibited only $V^{4+}$ and it showed fine adhesion irrespective of the $V_2O_5$ content. As a result, the existence of $V^{4+}$ seems to be a major factor for controlling the adhesive property of glass frit for laser sealing.

• 한국자기학회지
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• 제17권1호
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• pp.10-13
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• 2007

[ $LuFe_2O_4$ ] 단결정 시료를 floating zone법을 이용하여 합성, 결정학적 및 자기구조를 연구하였다. 결정 구조는 $R\={3}mh$의 능면체로 결정되었고, 격자 상수는 각각 $a_0=3.440(2)\;{\AA},\;c_0=25.263(2)\;{\AA}$이었다. 진동 시료 자화율 측정기(VSM) 실험결과와 $M\"{o}ssbauer$ 분석 실험결과 자기적 $N\'{e}el$ 온도($T_N$)는 250 K로 결정되었다. 12 K에서의 $M\ddot{o}ssbauer$ 스펙트럼을 결정구조에서 기인한 4개 세트의 6라인 공명흡수선으로 분석하였으며, 상온에서의 $M\"{o}ssbauer$ 스펙트럼은 3개의 single과 1개의 doublet이 중첩된 형태를 보였다. 상온에서 singlet들의 이성질체 이동치는 $Fe^{3+}$의 이온 상태를 나타내는 $0.20{\pm}0.01mm/s$ 전후의 값을, doublet은 $Fe^{2+}$의 이온 상태를 나타내는 $0.70{\pm}0.01mm/s$의 값을 갖는 것을 알 수 있었다. 상온에서의 $Fe^{3+}$와 $Fe^{2+}$간의 면적비율은 1:1로 나타났으나, 온도가 상승함에 따라 doublet 형태가 점차 사라지다가 360 K에서는 singlet 형태의 단일 흡수선으로 나타났다. 이는 $LuFe_2O_4$물질에서 나타내는 자발분극현상이 철 이온이 가지고 있는 거동의 변화 때문인 것으로 해석된다.