• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.259-265
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• 2009

We fabricated the field effect transistor using single crystalline ZnO nanowires synthesized by a conventional thermal evaporation method and investigated their basic properties under the various conditions such as ultraviolet irradiation, reducing gas and electrolyte. The typical carrier concentration and mobility of the single crystalline ZnO nanowire with a diameter of 100 nm and length of 5 um were $1.30{\times}10^{18}cm^{-3}$ and $15.6cm^2V^{-1}s^{-1}$, respectively. The current of ZnO nanowire under ultraviolet irradiation significantly increased about 400 times higher as compared to in the darkness. In addition, the ZnO nanowire showed typical sensing characteristics for $H_2$ and CO due to well-known surface reactions and typical current-voltage characteristics under the 0.1 M NaCl electrolyte.

• Bulletin of the Korean Chemical Society
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• v.2 no.2
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• pp.71-75
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• 1981

Vacuum ultraviolet photolysis of ethyl bromide was studied at 104.8-106.7 nm (11.4-11.6 eV) in the pressure range of 0.2-18.6 torr at $25^{\circ}$ using an argon resonance lamp with and without additives, i.e., NO and He. Since the ionization potential of $CH_3CH_2Br$ is lower than the photon energy, the competitive processes between the photoionization and the photodecomposition were also investigated. The observations indicated that 50% of absorbed light leads to the former process and the rest to the latter one. In the absence of NO the principal reaction products for the latter process were found to be $CH_4, C_2H_2, C_2H_4, C_2H_6, and C_3H_8$. The product quantum yields of these reaction products showed two strikingly different phenomena with an increase in reactant pressure. The major products, $C_2H_4$ and $C_2H_6$, showed positive effects with pressure whereas the effects on minor products were negative in both cases, i.e., He and reactant pressures. Addition of NO completely suppresses the formation of all products except $C_2H_4$ and reduces the $C_2H_4$ quantum yield. These observations are interpreted in view of existence of two different electronically excited states. The initial formation of short-lived Rydberg transition state undergoes HBr molecular elimination and this state can across over by collisional induction to a second excited state which decomposes exclusively by carbon-bromine bond fission. The estimated lifetime of the initial excited state was ${\sim}4{\times}10^{-10}$ sec. The extinction coefficient for $CH_3CH_2Br$ at 104.8-106.7 nm and $25{\circ}$ was determined to be ${varepsilon} = (1/PL)ln(I_0/I_t) = 2061{\pm}160atm^{-1}cm6{-1}$ with 95% confidence level.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.302.1-302.1
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• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.556-562
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• 2006

The plasma display panel is made of many small discharge cells, which consist of a discharge space between the cathode and anode. An electrical discharge occurs in the discharge space filled by neon and xenon gases. The electron temperature is determined from the sparking criterion, which theoretically estimates the electrical breakdown voltage in terms of the xenon mole fraction. The plasma in the cell emits vacuum ultraviolet lights of 147 nm and 173 nm, exciting fluorescent material and converting VUV lights to visible lights. The physical mechanisms of all these processes have been theoretically modeled and experimentally measured. The theory and experimental data agree reasonably well. However, new materials and better configuration of cells are needed to enhance discharge and light emission efficiency and to improve the PDP performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.394-394
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• 2010

Ammonium ion (${NH_4}^+$) was suggested as the origin of interstellar $6.85\;{\mu}m$ band. Early study, in which organic molecule and water ice film mixtures were photolyzed so that organic acids could be produced, explained the generation of ${NH_4}^+$ from the reaction of photogenerated organic acid and ammonia ($NH_3$). However, the observed abundance of organic acids or their counter-anions are not so high in interstellar ice and not enough to protonate $NH_3$ into ${NH_4}^+$ in the observed level. Because of the shortage in photogenerated organic acids, the candidate of acid which protonates $NH_3$ should be modified. Here, we prepare $NH_3/H_2O$ binary mixtures and photolyze them with vacuum ultraviolet (VUV, peak at 10.6 and 10.0 eV). We find the ammonium ion (${NH_4}^+$) from photolyzed mixture by using low energy sputtering (LES) and reflection absorption IR spectroscopy (RAIRS). As a hydronium ($H_3O^+$) can be produced by UV irradiation and protonate bases, ${NH_4}^+$ may be formed from the reaction of photogenerated $H_3O^+$ and $NH_3$. We show the generation of ${NH_4}^+$ without any kind of organic molecules or acids, and it may explain the relatively high abundance of ${NH_4}^+$ compared to the counter-anions or organic acids in interstellar ice.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.791-794
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• 2003

To synthesize $Gd_{2}O_{3}:Eu$ phosphor powder of nano size and high luminescence efficiency under UV (ultraviolet) and VUV (vacuum ultraviolet) light, organic additives such as citric acid and ethylene glycol and $Na_{2}CO_{3}$ flux were introduced in large-scale spray pyrolysis and critical conditions for forming nano-sized particles were investigated. The $Gd_{2}O_{3}:Eu$ phosphor particles prepared from solutions with organic additives such as citric acid and ethylene glycol had micron size and spherical shape. However, the particles prepared from polymeric precursor solution with $Na_{2}CO_{3}$ flux had nano size and non-aggregation characteristics. The as-prepared spherical particles with micron size turned into nano-sized particles during post-treatment by recrystallization process. The nano-sized $Gd_{2}O_{3}:Eu$ phosphor particles showed higher brightness than the commercial $Y_2O_3:Eu$ phosphor product under both UV light of 254nm and VUV light of 147 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.687-690
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• 2009

It has been recently reported that nano-sized MgO single crystal powders emit ultraviolet by stimulation of electrons under vacuum condition. Therefore, in this study, nano-crystalline MgO powders were applied to a xenon plasma flat fluorescent lamp for LCD backlight to improve emission efficiency of the lamp by help of extra ultraviolet from nano-MgO. For comparison with nano-crystalline MgO powders, MgO nano-thin film was applied directly on phosphors inside a lamp panel through e-beam evaporation The luminance and efficiency of FFL with an addition of MgO nano-crystal powders on phosphors were improved by around 20%. Application of MgO thin film to phosphors worsened the emission characteristics of FFLs, even rather than FFL without MgO. The reason came from insufficient stimulation of phosphors by UV, crystallinity of MgO, and low secondary electron coefficient.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.133-140
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• 2006

The growth characteristics and properties of large size $SrAlF_5$ single crystals are described and compared with those of $BaMgF_4$. Transmission spectra in the vacuum ultraviolet wavelength region indicate a high transparency of $SrAlF_5$ (about 90% without considering surface reflection loses) down to 150 nm, on contrast to the optical loses observed for $BaMgF_4$. The ferroelectric character of $SrAlF_5$ is evidenced by the reversal of the spontaneous polarization in a hysteresis loop. The higher potential of $SrAlF_5$ in comparison with $BaMgF_4$ for the realization of all-solid-state lasers in the ultraviolet wavelength region by the quasi-phase matching (QPM) technique is pointed out. $SrAlF_5$, besides a higher grade of transparency, shows a nonlinear effective coefficient similar to that of quartz and uniaxial nature, on contrast to the one order smaller nonlinear coefficient and biaxial character of $BaMgF_4$. The refractive index of $SrAlF_5$ from the ultraviolet to the near-infrared wavelength region is measured by the minimum deviation method. The Sellmeier and Cauchy coefficients are obtained from the fits to the curves of the ordinary and extraordinary refractive indices, and the grating period for the first order QPM is estimated as a function of the wavelength. The poling periodicity for 193 nm SHG from 386 nm is $4{\mu}m$.

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.17-17
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• 1998

Synchrotron radiation is produced when charged particles moving with relativistic velocities a are accelerated - for example, deflected by the bending magnets which guide the electron or p positrons in circular accelerators or storage rings. By using special focusing magnetic lattices i in the particle accelerators it is possible to make the dimensions of the particle beam very small with a hi맹 charge density which results in a light source with high b디lIiance. Synchrotron light h has important properties which make it ideal for a wide range of investigations in surface s science. The fact that the spectrum of electromagnetic radiation emitted in a bending magnet e extends in a continuum from the 얹r infra red region to hard x-rays means that it is id않I for a v variety of spectroscopic studies. Since there are no convenient lasers, or other really bright l light sources, in the vacuum ultraviolet and soft x-ray re.밍ons the development of synchrotron r radiation has enabled enormous advances to be made in this di펌C비t spectr따 re밍on. P Polarization-dependent measurements, for ex없nple ellipsometry or circular dichroism studies a are possible because the radiation has a well-defined polarization - linear in the plane of orbit w with additional right-circular, or left-circular, components for emission an생es above, or below, t the horizontal, respectively. Since the synchrotron light is emitted from a bunch of charge c circulating in a ring the light is emitted with a well-defined time structure with a short flash of l light every time a bunch passes an exit port. The time structure depends on the size of the ring a and the number and sequence of filling of the bunches. A pulsed light source enables time¬r resolved studies to be performed which provide direct information on the lifetimes and decay m modes of excited states and in addition opens up the possibility of using time of flight t techniques for spectroscopic studies. The fact that synchrotron radiation is produced in a clean u ultrahi야 vacuum environment is of gr않t importance for surce science studies. The current t비rd generation synchrotron light sources provide exceptionally high baliance and stability a and open up possibilities for experiments which would have been inconceivable only a short time ago.