• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.116-117
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• 1994

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.140-140
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.912-915
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• 2004

A vacuum environment is very important for NGL(Next Generation Lithography) apparatuses such as EUVL(Extreme Ultra Violet Lithography) or EPL(Electron Projection Lithography) and so on. The performance of these systems is dominated by vacuum level of processing and positioning accuracy of a stage. So, ultra-precision stage usable in a high vacuum level is needed for the improved performance of these devices. In contrast to atmospheric condition, a special attention must be paid to guide bearing, actuator and other elements. In this paper, air bearing is adopted because of its very high motional accuracy. So, air bearing is designed to be vacuum compatible using differential exhaust method, which prevents air from entering into vacuum chamber. For this, leakage analysis is performed theoretically and verified from experiment.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.60-65
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• 2009

We performed a study on optical properties of $BaSm_2Ti_4O_{12}$ thin films by vacuum ultra violet spectroscopic ellipsometry in the $0.92{\sim}8.6\;eV$ energy range. For the analysis of the measured ellipsometric spectra, a 5-layer model was applied where optical property of the $BaSm_2Ti_4O_{12}$ layer was well represented by a Tauc-Lorentz dispersion function. Our analysis clearly showed new structure in high energy region at about 7.5 eV Consistent changes of refractive index & extinction coefficient of the $BaSm_2Ti_4O_{12}$ thin film by the growth and annealing temperatures were also confirmed.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.40-45
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• 2007

ZnCdSe alloy semiconductor was widely used for the optoelectronic device. And CdSe is the end-point in this material. In this work, we measured the dielectric function spectrum of cubic CdSe with Vacuum Ultra Violet spectroscopic ellipsometry and analysed this data with parametric model. As a result, we observed some of transition energy point over 6 eV and obtained the database for dielectric function spectrum, which could be used for temperature or alloy composition dependence study on optical property of CdSe.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.453-456
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• 2000

This paper presents experimental results on selecting optimal process parameters for UV-Vaccum casting. The UV-Vacuum casting is a relatively new process that allows very rapid mold preparation and part duplication via UV curing. Effect of various process variables such as pressure and temperature on mold strength and part accuracy was evaluated by using Taguchi method.

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.5-5
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• 1996

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.109-112
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• 2003

In this paper, we investigated the phosphor degradation characteristics on the ultra violet ray (UV) irradiation as well as ion bombardment. We propose a novel experiment method which is related with phosphor degradation causes. The phosphor deterioration experiments were made on the UV irradiation as well as ion bombardment. To carry out the experiment and compare the results, we made up the specific experimental setup. The results show that the deterioration by ion damage is more rigorous than that by vacuum ultra violet (VUV) on the phosphor efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.689-691
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• 2002

Well-aligned multi-wall carbon nanotubes (MWCNTs) have been grown on both Coming glass and silicon substrates at about 400 $^{\circ}C$ by a modified plasma - enhanced chemical vapor deposition system. We have investigated laser irradiation effect on carbon nanotube surface by using an ultra - violet laser. The laser operated to modify structural defect of was carbon nanotube and to ablate possible contamination of carbon nanotube surface. The morphology and surface transformation of MWCNTs as analyzed by a SEM. In addition, the field emission measurement was also carried out in a vacuum chamber with a $10^{-7}$ Torr base pressure by applying bias voltages up to 1000V.