• Title/Summary/Keyword: Vacuum phenomenon

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High aspect ratio Zinc Oxide nanorods for amorphous silicon thin film solar cells

  • Kim, Yongjun;Kang, Junyoung;Jeon, Minhan;Kang, Jiyoon;Hussain, Shahzada Qamar;Khan, Shahbaz;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.235.2-235.2
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    • 2015
  • The front transparent conductive oxide (TCO) films must exhibit good transparency, low resistivity and excellent light scattering properties for high efficiency amorphous silicon (a-Si) thin film solar cells. The light trapping phenomenon is limited due to non-uniform and low aspect ratio of the textured glass [1]. We present the low cost electrochemically deposited uniform zinc oxide (ZnO) nanorods with various aspect ratios for a-Si thin film solar cells. Since the major drawback of the electrochemically deposited ZnO nanorods was the high sheet resistance and low transmittance that was overcome by depositing the RF magnetron sputtered AZO films as a seed layer with various thicknesses [2]. The length and diameters of the ZnO nanorods was controlled by varying the deposition conditions. The length of ZnO nanorods were varied from 400 nm to $2{\mu}m$ while diameter was kept higher than 200 nm to obtain different aspect ratios. The uniform ZnO nanorods showed higher haze ratio as compared to the commercially available FTO films. We also observed that the scattering in the longer wavelength region was favored for the high aspect ratio of ZnO nanorods and much higher aspect ratios degraded the light scattering phenomenon. Therefore, we proposed our low cost and uniform ZnO nanorods for the high efficiency of thin film solar cells.

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High Performance GaN-Based Light-Emitting Diodes by Increased Hole Concentration Via Graphene Oxide Sheets

  • Jeong, Hyun;Jeong, Seung Yol;Jeong, Hyun Joon;Park, Doo Jae;Kim, Yong Hwan;Kim, HyoJung;Lee, Geon-Woong;Jeong, Mun Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.244.1-244.1
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    • 2013
  • The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

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Change Of the Properties and the $Cr_3C_2$ Phase by Sintering Atmospere on $Ti(C, N)-Cr_3C_2$ Ceramics ($Ti(C, N)-Cr_3C_2$, 소결체의 오결분위기에 따른 물성과 $Cr_3C_2$ 상변화)

  • 김무경;이재의
    • Korean Journal of Crystallography
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    • v.3 no.1
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    • pp.44-52
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    • 1992
  • The effect of sintering atmosphere on the final properties and phase change of Ti (C, N) Cr3c2 ceramics was investigated. In the case of sintering in vacuum and N2 atmosphere, densely packed sintered body was obtained. In Ar atmosphere, however, densification was much decreased compared to sintering in vacuum and Na. XRD analysis showed that in vacuum atmosphere Cr3c2 phase was changed to Cr7c3 Phase whereas in N2 and Ar atmosphere phase change was not occurred. That is, for vacuum sintering, the formation of defects in Ti(C, N) structure occurred through de-nitridation process, and it promotes the diffusion of C in Cr3c2 and raises the densification effects. But in the case of N2 atmosphere, densification phenomenon was considered to be due to sintering mechanism that enabled formation of free carbon and removal of oxygen by free carbon and existence of carbon in the grain boundary.

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Abnormal Work Function Modification at the Interface between Organic Molecule and Solid Surfaces

  • Kim, Ji-Hoon;Seo, Jae-Won;Kang, Hye-Seung;Kim, Jeong-Kyu;Kim, Jeong-Won;Lee, Han-Gil;Kwon, Young-Kyung;Park, Yong-Sup
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.63-63
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    • 2010
  • Using both experimental and theoretical approaches, we have investigated the adsorption properties of an organic molecule (HATCN), which is used in OLEDs as an efficient hole injection layer, on metal and inert surfaces. We have also studied the structural and electronic properties of such interfaces and the dependences on deposition thickness. We have observed different trends in work function changes with different surfaces. Our photoelectron spectroscopic measurements have revealed an abnormal phenomenon in HATCN on a metal (Cu) surface: the work function decreases at lower coverage (~monolayer) of HATCN on a metal (Cu) surface, but it increases back and becomes higher than that of a bare Cu surface at higher coverage. It has, on the contrary, been observed that the work function of graphene surface just increases as the HATCN coverage increases. Our first-principles density functional calculations has not only verified our experimental observations, but also disclosed the underlying mechanism of such abnormal and different work function behaviors. We have found that the change in work function results from mutual polarization induced by the geometrical deformation and the bond dipole formed at the interface due to the charge redistribution. At low coverage of HAT-CN on Cu substrate, the former reduces the work function significantly by pulling down the vacuum level, while the latter tends to push up the vacuum level resulting in the work function increase.

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Experimental determination of liquid entry pressure (LEP) in vacuum membrane distillation for oily wastewaters

  • Racz, Gabor;Kerker, Steffen;Schmitz, Oliver;Schnabel, Benjamin;Kovacs, Zoltan;Vatai, Gyula;Ebrahimi, Mehrdad;Czermak, Peter
    • Membrane and Water Treatment
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    • v.6 no.3
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    • pp.237-249
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    • 2015
  • In this study we investigate a laboratory scale vacuum membrane distillation system to produce pure water from model oil in water emulsion. Experimental determination of liquid entry pressure (LEP) of a commercial Durapore$^{TM}$ GVPH flat sheet membrane using model emulsions in various oil concentrations has been carried out. Two different methods of liquid entry pressure determination - a frequently used, so-called static and a novel dynamic method - have been investigated. In case of static method, LEP value was found to be 2.3 bar. No significant effect of oil content on LEP was detected up to 3200 ppm. In contrast, LEP values determined with dynamic method showed strong dependence on the oil concentration of the feed and decreased from 2.0 bar to a spontaneous wetting at 0.2 bar in the range 0-250 ppm, respectively. Vacuum membrane distillation tests were also performed. The separation performance is evaluated in terms of flux behavior, total organic carbon removal and droplet size distribution of the feed and final retentate. No significant effect of oil content on the flux was found ($5.05{\pm}0.31kgm^{-2}h^{-1}$) up to 250 ppm, where a spontaneous wetting occurred. High separation performance was achieved along with the increasing oil concentration between 93.4-97.0%.

Study of Driving and Thermal Stability of Anode-type Ion Beam Source by Charge Repulsion Mechanism

  • Huh, Yunsung;Hwang, Yunseok;Kim, Jeha
    • Applied Science and Convergence Technology
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    • v.27 no.3
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    • pp.47-51
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    • 2018
  • We fabricated an anode-type ion beam source and studied its driving characteristics of the initial extraction of ions using two driving mechanisms: a diffusion phenomenon and a charge repulsion phenomenon. For specimen exposed to the ion beam in two methods, the surface impurity element was investigated by using X-ray photoelectron spectroscopy. Upon Ar gas injection for plasma generation the ion beam source was operated for 48 hours. We found a Fe 2p peak 5.4 at. % in the initial ions by the diffusion mechanism while no indication of Fe in the ions released in the charge repulsion mechanism. As for a long operation of 200 min, the temperature of ion beam sources was measured to increase at the rate of ${\sim}0.1^{\circ}C/min$ and kept at the initial value of $27^{\circ}C$ for driving by diffusion and charge repulsion mechanism, respectively. In this study, we confirmed that the ion beam source driven by the charge repulsion mechanism was very efficient for a long operation as proved by little electrode damage and thermal stability.

Study of microstructure of carbon-based materials in plasma wind tunnel testing

  • Kang, Bo-Ram;Lim, Hyeon-Mi;Oh, Phil-Yong;Hong, Bong Guen
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.200.2-200.2
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    • 2016
  • Carbon-based materials have been known as ablative material and have been used for thermal protection systems. Ablation is an erosive phenomenon that results in thermochemical and thermomechanical changes on materials. Ablation resistance is one of the key properties that determines performance and life-time of the thermal protection material under ablative conditions. In this study, ablation properties of graphite, 3-dimensional (C/C) composites (needle-punched type and rod type) were investigated byusing a plasma wind tunnel which produce a supersonic plasma flow from a segmented arc heater with the power level of 0.4 MW. The mass losses and surface roughness changes which contain main result of the ablation are measured. A morphological analysis ofthe carbon-based materials, before and after the ablation test, are performed through field emission scanning electron microscopy (FE-SEM) and non-contact 3D surface measuring system. Electronic balance and a portable surface roughness tester were used for evaluation of the recession and mass loss of the test samples.

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Leidenfrost Points Tuned via Surface Coating and Structures

  • Jeon, Deok-Jin;Lee, Jun-Young;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.126.1-126.1
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    • 2015
  • A quantitative relationship between Leidenfrost point and surface characteristics such as surface material and roughness is investigated. Based on the relationship, we have fabricated the surfaces with their Leidenfrost points (LFP) tuned by controlling surface coating and structures. As discovered by Leidenfrost, liquids placed on a hot plate levitate on the gas phase-air gap formed by the vaporization of liquids. This phenomenon is called 'Leidenfrost effect'. A change of LFP has attracted many researchers for several years but the ability to tune LFP is still a remaining issue. Many of previous work has progressed for various conditions so the systematic approach and analysis are needed to clearly correlate the LFP and the surface conditions. In this report, we investigate a relation of surface energy and LFP using various coating materials such as Octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, 2H-Perfluorooctyltrichlorosilane (FOTS). Also, we analyze how surface roughness affects LFP via surface micro structuring with ICP-RIE fabrication process. The improved understanding can have potential applications such as the control of liquid droplet behavior at elevated temperatures for efficient cooling system.

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Electrical Characteristics of Solution Processed DAL TFT with Various Mol concentration of Front channel

  • Kim, Hyunki;Choi, Byoungdeog
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.211.2-211.2
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    • 2015
  • In order to investigate the effect of front channel in DAL (dual active layer) TFT (thin film transistor), we successfully fabricated DAL TFT composed of ITZO and IGZO as active layer using the solution process. In this structure, ITZO and IGZO active layer were used as front and back channel, respectively. The front channel was changed from 0.05 to 0.2 M at fixed 0.3 M IGZO of back channel. When the mol concentration of front channel was increased, the threshold voltage (VTH) was increased from 2.0 to -11.9 V and off current also was increased from 10-12 to 10-11. This phenomenon is due to increasing the carrier concentration by increasing the volume of the front channel. The saturation mobility of DAL TFT with 0.05, 0.1, and 0.2 M ITZO were 0.45, 4.3, and $0.65cm2/V{\cdot}s$. Even though 0.2 M ITZO has higher carrier concentration than 0.05 and 0.1 M ITZO, the 0.1 M ITZO/0.3 M IGZO DAL TFT has the highest saturation mobility. This is due to channel defect such as pores and pin-holes. These defect sites were created during deposition process by solvent evaporation. Due to these defect sites, the 0.1 M ITZO/0.3 M IGZO DAL TFT shows the higher saturation mobility than that of DAL TFT with front channel of 0.2 M ITZO.

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Dislocation Density Estimation and mosaic Model for GaN/SiC(0001) by High Resolution x-ray Diffraction

  • Yang, Quankui;Li, Aizhen
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.43-46
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    • 1997
  • High resolution x-ray diffraction and two dimensional triple axis mapping were used to characterize a group of GaN layers of about 1.1$\mu$m grown by direct current plasma molecular beam epitaxy technique on 6H-SiC(0001). A FWHM of 11.9 arcmins for an $\omega$ scan and 1.2 arcmins for an $\omega$/2$\theta$ scan were observed. A careful study of the rocking curves showed there were some large mosaics in the GaN layer and a tilt of $0.029^{\circ}$ between the GaN layer and the SIC substrate was detected. The two dimensional triple axis mapping showed that the GaN mosaica were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaics were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaic model was deduced to explain the phenomenon and the dislocation density was estimated to be about~$10^9\;\textrm{cm}^{-2}$ acc ding to the model.

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