• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2008년도 춘계학술대회논문집
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• pp.711-714
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• 2008

The objective of this paper is to know the characteristics of pressure through a simplified typical carburetor used in small engines at the different throttle opening conditions. The carburetor is the device responsible for creating the right air-fuel mixture according to the different engine operating conditions. It is activated by the static or the dynamic pressure. The carburetor dummy is geometrically similar of LPG brush-cutter engine's diaphragm carburetor and is made of acrylic. Suction system gives body to crankcase vacuum using the vacuum pump and throttle opening conditions are controled by transfer device. Carburetor venturi throat and fuel charging tube diameter is each 20mm, 4.1mm. The result of the work presents an unprecedented phenomenon of suction pressure variation inside the carburetor venturi. It is predicted that these unprecedented pressure variation be caused by minor losses; sudden contraction or expansion, open or partially closed and so on.

• 대한기계학회논문집A
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• 제31권5호
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• pp.578-585
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• 2007

A vacuum circuit breaker (VCB) with permanent magnet actuator (PMA) has been studied in this study. Electromagnetic field analysis and dynamic simulations have been carried out for optimal design of VCB by using commercial software Maxwell and ADAMS. This simulation model can be an effective method for the VCB, which has non-linear output force of PMA, friction, and impact for operations. An experiment has been conducted to evaluate correctness of the simulated model. By using this evaluated model, the displacement and velocity characteristics of the VCB have been simulated with following conditions : (1) The different output forces of PMA have been applied, (2) The friction conditions in follow lever shaft and moving part have been changed, (3) The mass conditions of moving part have been changed. The simulated results shows that the velocity characteristics are mainly determined by the output force of PMA. The effects due to the changes of friction conditions against the dynamic characteristics was small, and the mass conditions of the moving parts affect the velocity and a bouncing phenomenon of VCB. From these results, the optimal design conditions for the VCB have been derived.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.326-331
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• 2000

We have fabricated the field emitter arrays coated with diamond-like carbon (DLC) films that improved the field emission characteristics. The nitrogen doped DLC films are prepared by the filtered cathodic vacuum are (FCVA) tehnique. The activation energy of the nitrogen doped DLC films are derived from electrical conductivity measurements. The silicon field emission arrays (FEAs) were prepared by the VLSI technique. The turn-on field was rapidly decreasing and the emission current was remarkably increasing the DLC-coated FEAs than the non-coated silicon FEAs. In the nitrogen doped FEAs, the turn-on field decreased and the emission current increased with increasing the nitrogen found out the field emission current and the work function of the DLC-coated FEAs was remarkably decreased than that of the non-coated silicon FEAs. As nitrogen doping concentrations are increased the work function of FEAs is decreased and the field emission properties are improved in nitrogen doped DLC-coated FEAs. This phenomenon in due the fact that the Fermi energy level moves to the conduction band by increasing nitrogen doping concentration.

• 한국주조공학회지
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• 제27권1호
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• pp.42-47
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• 2007

Vacuum molding process(V-process) has several benefits such as a lower total production cost and a high quality casting comparing to the conventional sand molding. Influence of the gating design on the molten metal flow was investigated in this study. General criteria for the gating design of the castings and commercial codes for the flow and solidification analysis were used to attain the optimized gating design in V-process. Though mold cavity was filled smoothly under the low initial velocity of molten metal, molten metal dashed against the upper part of the mold before the completion of the mold filling with higher initial molten metal velocity and fell soon. This phenomenon may affect collapsing the mold shape, however it is thought that the possibility of burning out of the vinyl by the molten metal is not so high because vinyl is coated with refractory material.

• 전기학회논문지
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• 제67권9호
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• pp.1159-1164
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• 2018

Vacuum circuit breakers(VCB) are widely used for current interruption of high-voltage inductive loads such as induction motors. This VCB can be chopped off before the current zero due to its high arc-extinguishing capability. One of the outstanding features of VCB is that it can cut off high frequency re-ignition current more than other circuit breakers. If the transient recovery voltage generated in the arc extinguishing is higher than the dielectric strength of the circuit breaker, a re-ignition phenomenon occurs. The surge voltage of the re-ignition is very high in magnitude and the steepness of the waveform is so severe that it can act as a high electrical stress on the winding. If the high frequency current of one phase affects the other two phases when the re-ignition occurs, it may cause a high surge voltage due to the virtual current chopping. If the magnitude of the voltage allowed in the motor winding is high or the waveform level is too severe, it may lead to insulation breakdown. Therefore, it is necessary to reduce the voltage to within a certain range. In this study, we briefly explain the various phenomena at the time of interruption, analyzed the magnitude of the dielectric strength and the transient recovery voltage at the simultaneous three-phase interruption that can give the greatest influence to the inductive load, proposed a method to reduce the impact.

• 한국추진공학회지
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• 제17권4호
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• pp.43-48
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• 2013

초음속 디퓨져에서 천이구간에 대해서 수치적 기법에 의한 분석을 수행하였다. 수치기법으로는 초음속 디퓨져의 내부유동해석을 위하여 2차원 축대칭 Navier-Stokes equation와 $k-{\epsilon}$ 난류모델을 사용하였으며, 로켓엔진 연소실의 천이 구간의 압력변화에 따라서 디퓨져 내부의 마하수 및 진공챔버의 온도 분포를 비교 검토하였다. 초음속 디퓨져의 작동과정에서 진공챔버 내부에 연소가스가 유입되어지고 이러한 현상에 따라서 진공챔버 내부의 압력 및 온도가 상승하는 결과를 확인하였다. 이러한 유동현상에 따라서 천이과정에서 압력 및 온도 상승을 방지하는 시스템이 필요하다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 전력전자학술대회 논문집
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• pp.316-318
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• 2001

In this paper, the basic characteristics of flat fluorescent lamp using ultraviolet generated from gas discharge and powder type electrolyminescent display(P-ELD) using a phenomenon of the light emission eaused by the electrical field applied to phosphor are studied. The lamp is a simple structure with insulator layer, phosphor layer, and gas gap. Current(displacement current + discharge current) in flat fluorescent lamp using.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.73-75
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• 2013

Atomic force microscopy (AFM) [1] can now not only image individual atoms but also construct atom letters using atom manipulation method [2]. Therefore, the AFM is the second generation atomic tool following the well-known scanning tunneling microscopy (STM). The AFM, however, has the advantages that it can image even insulating surfaces with atomic resolution and also measure the atomic force itself between the tip-apex outermost atom and the sample surface atom. Noting these advantages, we have been developing a novel bottom-up nanostructuring system, as shown in Fig. 1, based on the AFM. It can identify chemical species of individual atoms [3] and then manipulate selected atom species to the designed site one-by-one [2] to assemble complex nanostructures consisted of many atom species at room temperature (RT). In this invited talk, we will introduce our results toward atom-by-atom assembly of composite nanomaterials based on the AFM at RT. To identify chemical species, we developed the site-specific force spectroscopy at RT by compensating the thermal drift using the atom tracking. By converting the precise site-specific frequency shift curves, we obtained short-range force curves of selected Sn and Si atoms as shown in Fig. 2(a) and 2(b) [4]. Then using the atom-by-atom force spectroscopy at RT, we succeeded in chemical identification of intermixed three atom species in Pb/Sn/Si(111)-(${\surd}3$'${\surd}3$) surface as shown in Fig. 2(c) [3]. To create composite nanostructures, we found the lateral atom interchange phenomenon at RT, which enables us to exchange embedded heterogeneous atoms [2]. By combining this phenomenon with the modified vector scan, we constructed the atom letters "Sn" consisted of substitutional Sn adatoms embedded in Ge adatoms at RT as shown in Fig. 3(a)~(f) [2]. Besides, we found another kind of atom interchange phenomenon at RT that is the vertical atom interchange phenomenon, which directly interchanges the surface selected Sn atoms with the tip apex Si atoms [5]. This method is an advanced interchangeable single atom pen at RT. Then using this method, we created the atom letters "Si" consisted of substituted Si adatoms embedded in Sn adatoms at RT as shown in Fig. 4(a)~(f) [5]. In addition to the above results, we will introduce the simultaneous evaluation of the force and current at the atomic scale using the combined AFM/STM at RT.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.576-576
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• 2013

Recently, diagnostics of plasma becomes more important due to requirement of precise control of plasma processing based on measurement of plasma characteristics. The Langmuir probe has been used for the diagnostics but it has an inevitable uncertainty and error sources such as incorrect tip length and RF noise. Instead of the Langmuir probe, various diagnostic methods have been developed and researched. The cutoff probe is promising one for plasma density using microwaves and resonance phenomenon at the plasma frequency. The cutoff probe has various advantages as follows; (i) it is simple and robust, (ii) it uses few assumptions, and (iii) it is free from deposition by reactive gas. However, the cutoff probe also has uncertainty and error sources such as gap between tips, tip length, direction of tip plane, and RF noise. In this study, the uncertainty and error sources in manufacturing both probes and in diagnostics process were analyzed via comparative experiment at various discharge conditions. Furthermore, to reveal the user dependence of both probes, three well trained Ph. D students made the Langmuir probe and the cutoff probe, respectively, and it were analyzed. Thought this study, it is established that reliability and validity of the Langmuir probe and the cutoff probe related with not only the intrinsic characteristics of probes but also probe user.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.294.1-294.1
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• 2016

Transition metal dichalcogenides (TMDs) with two-dimensional layered structure, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are considered attractive materials for future semiconductor devices due to its relatively superior electrical, optical, and mechanical properties. Their excellent scalability down to a monolayer based on the van der Waals layered structure without surface dangling bonds makes semiconductor devices based on TMD free from short channel effect. In comparison to the widely studied transistor based on MoS2, researchs focusing on WSe2 transistor are still limited. WSe2 is more resistant to oxidation in humid ambient condition and relatively air-stable than sulphides such as MoS2. These properties of WSe2 provide potential to fabricate high-performance filed-effect transistor if outstanding electronic characteristics can be achieved by suitable metal contacts and doping phenomenon. Here, we demonstrate the effect of two different metal contacts (titanium and platinum) in field-effect transistor based on WSe2, which regulate electronic characteristics of device by controlling the effective barreier height of the metal-semiconductor junction. Electronic properties of WSe2 transistor were systematically investigated through monitoring of threshold voltage shift, carrier concentration difference, on-current ratio, and field-effect mobility ratio with two different metal contacts. Additionally, performance of transistor based on WSe2 is further enhanced through reliable and controllable n-type doping method of WSe2 by triphenylphosphine (PPh3), which activates the doping phenomenon by thermal annealing process and adjust the doping level by controlling the doping concentration of PPh3. The doping level is controlled in the non-degenerate regime, where performance parameters of PPh3 doped WSe2 transistor can be optimized.