• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.259-259
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• 2015

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was deposited before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. This Ni diffusion through an ITO NW was investigated by transmission electron microscope to observe the Ni-tip sitting on a single crystalline ITO NW. Meanwhile, a single crystalline ITO structure was found at bottom and body part of a single ITO NW without remaining of Ni atoms. This indicates the Ni atoms diffuse through the oxygen vacancies of ITO structure. Rapid thermal process (RTP) applied to generate an initial stage of a formation of Ni nanoparticles with variation in time periods to demonstrate the existence of an optimum condition to initiate ITO NW growth. Modulation in ITO sputtering condition was applied to verify the ITO NW growth or the ITO film growth. The Ni-assisted grown ITO layer has an improved electrical conductivity while maintaining a similar transmittance value to that of a single ITO layer. Electrically conductive and optically transparent nanowire-coated surface morphology would provide a great opportunity for various photoelectric devices.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.425-431
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• 1999

$Pb(Zr_{0.52}, Ti_{0.48})O_3$ (PZT) thick films as an actuating material with conducting oxides, $(La_{0.5}Sr_{0.5}) CoO_3$ (LSCO), have been fabricated by sol-gel method for Optical Micro-Electro-Mechanical System (MEMS) devices, in which PZT/LSCO/SiO2 structures were used. In order to improve the adhesion to LSCO solution in order to enhance the wetting behavior of a water-based LSCO precursor solution and further to improve the adhesion between LSCO and $SiO_2$ layers. PZT films were made using 1-3 propanediol based precursor solution which has a high viscosity and a boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxied and Zr-propoxied are partially substituted with acetylacetone to achieve the solution stability while maintaining reactivity. Crack free PZT films (0.8~1$\mu\textrm{m}$) have been successfully fabricated at crystallization temperatures above $700^{\circ}C$. Dielectric constants and dielectric losses of the PZT films were 900~1200and 2~5%, respectively. Piezoelectric constant $d_{33}$ of the PZT films constrained by a substrate were 200pm/V at 100kV/cm.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.524-529
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• 1999

We deposited diamond phase carbon thin films on Si substrate by the electrolysis of methanol solution. A little amount of ammonia solution was added to increase the current density of the electrolyte. We analyzed films by XRD and SEM. The chemical change of electrolyte during the electrolysis process was characterized by FTIR. We obtained better quality diamond phase carbon films at a lower applying boltage(300V) and temperature ($40^{\circ}C$) by adding ammonia solution to methanol electrolyte. Diamond (111), (220), (311) peaks were shown distinctively in XRD graph. Addition of ammonia solution resulted in lowering the applying bias voltage to 300V and the substrate temperature to $40^{\circ}C$ still maintaining a high current density at 80mA/$\textrm{cm}^2$, which prohibited a great loss of solution from vaporization. Possible change of chemical reaction due to the addition of ammonia solution was also discussed.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• Tribology and Lubricants
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• v.13 no.4
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• pp.60-65
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• 1997

The tungsten disulfide $(WS_2)$ solid lubricant was synthesized by two different reaction processes, i.e., the reaction between $CS_2$ gas phase and solid $WO_3$powder, and the vapour phase transport method of tungsten and sulfur in a high vacuum. The chemical and physical characteristics of synthesized $WS_2$powder were analyzed in terms of the average particle size, morphology, crystalline phase etc. in comparison with those of commercial $WS_2$powder. The solid $WO_3$ powder with the average size of 0.2 ${\mu}{\textrm}{m}$ was reacted with $CS_2$gas flowed with$N_2$or 96%$N_2{\times}4%H_2$forming gas for 36 h and 24 h at 90$0^{\circ}C$ respectively. $WS_2$ crystalline phase was then formed through the intermediate phase of .$W_{20}O_{58}$ In the case of vapour phase transport method, the 3.5 wt% iodine was added as a vapour transport reagent into the composition of tungsten and sulfur powders maintaining a constant molar ratio of W:S=1:2.2. The mixture was then heat treated at 85$0^{\circ}C$ for 2 weeks in vacuum. The reaction product obtained showed the average size of 12 ${\mu}{\textrm}{m}$ and the hexagonal plate shape of typical solid lubricant with 2H-$WS_2$crystalline phase.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.6
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• pp.677-684
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• 2006

An ejector is a fluid transfer device to be used for mixing of fluids, maintaining vacuum, and overcoming a poor suction condition. To date, most ejectors have been made from the casting process. which is time-consuming and high-cost process. Therefore, a new production method of ejectors is desired if any. In this experimental study, we proposed a new type ejector manufactured from the commercial fitting materials and the welding process, which is equipped with an orifice type nozzle. The proposed ejector has a good integrity compared with the conventional ejector because the fittings have manufactured by forging and they have more strength than the casting materials. Furthermore we adopted a multi-opening orifice type nozzle for improving a suction capacity and compared with a single-opening orifice type nozzle. From the experimental results. we confirmed that the multi-opening nozzle had a food suction capacity than the single-opening nozzle and the proposed new type ejector showed higher vacuum than the conventional type ejector in non-load condition. These improved characteristics suggests that a new type ejector by using the commercial fittings opens the feasibility to be adopted in various industry fields and that the increased suction capacity can be achieved by altering the nozzle design of a conventional ejector.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.442-442
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• 2014

Although electrochemical capacitors (ECs), also known as supercapacitors or ultracapacitors, is one of the most promising energy-storage devices because of its high power density, super-high cycle life, and safe operation. We herein report a synthesis of graphene-based flexible films by kneading method. Thus, a device can be readily made by sandwiching a polymer membrane included ionic liquid electrolytes between two identical graphene-based flexible films. Devices made with these electrodes exhibit ultrahigh energy density values while maintaining the high power density and excellent cycle stability of ECs. Moreover, these ECs maintain excellent electrochemical attributes under high mechanical stress and thus hold promise for high-energy, flexible electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.369.2-369.2
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• 2014

Diamond-like Carbon(DLC) films doping Si were deposited by linear ion source(LIS)-physical vapor deposition method on Si wafer. We have studied the effects of Si content on friction and wear properties of DLC films and the characteristics of the films were investigated using Nano-indentation, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS). The films has been various low-friction and low-stress by varying the flow rates of silane gas. Under the about 2% of Si doping is very suitable for improving the adhesion of films and reducing internal stress while maintaining the surfaces hardness of DLC films. Linear ion source (LIS)를 사용하여 Si wafer위에 Si 이온이 첨가된 DLC 박막을 증착하였다. 참가된Si 이온의 양에 따라 DLC 박막에 미치는 영향을 분석하기 위하여 마찰 계수 및 경도를 비교하였고, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS)를 통하여 표면 상태를 분석하였다. 천체 주입된 가스량의 약 2%까지 Si 이온 주입이 늘어날수록 DLC 박막의 마찰계수는 낮아졌고, 경도는 Si 이온이 주입되지 않았을 경우와 비슷한 값(약 20~23 GPa)을 가졌다. 2% 이상의 주입량에서는 마찰계수는 주입량이 늘어날수록 높아졌으며 경도는 떨어지는 경향을 보였다. 이는 Si이온이 2%이하로 첨가되었을 경우, DLC 박막의 생성시 탄소 이온들의 결합 Stress를 줄여 마찰계수가 줄어든다고 볼 수 있으며, 그 양이 2%이상이 되면 오히려 불순물로 작용하여 DLC 박막의 Stress는 급격히 증가하고 마찰계수도 높아짐을 알 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.107.1-107.1
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• 2014

We have developed and commercialize a time-of-flight - medium energy ion scattering spectrometry (TOF-MEIS) system (model MEIS-K120). MEIS-K120 adapted a large solid acceptance angle detector that results in high collection efficiency, minimized ion beam damage while maintaining a similar energy resolution. In addition, TOF analyzer regards neutrals same to ions which removes the ion neutralization problems in absolute quantitative analysis. A TOF-MEIS system achieves $7{\times}10^{-3}$ energy resolution by utilizing a pulsed ion beam with a pulse width 350 ps and a TOF delay-line-detector with a time resolution of about 85 ps. TOF-MEIS spectra were obtained using 100 keV $He^+$ ions with an ion beam diameter of $10{\mu}m$ with ion dose $1{\times}10^{16}$ in ordinary experimental condition. Among TOF-MEIS applications, we report the quantitative compositional profiling of 3~5 nm CdSe/ZnS QDs, As depth profile and substitutional As ratio of As implanted/annealed Si, Ionic Critical Dimension (CD) for FinFET, Direct Recoil (DR) analysis of hydrogen in diamond like carbon (DLC) and InxGayZnzOn on glass substrate.

• Food Science and Preservation
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• v.1 no.2
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• pp.81-86
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• 1994

This study examined the quality change of red peppers during storage at various temperatures and humidities. It was observed that red peppers showed mold at aw 0.75(>25% water content), discoloration at aw 0.33(<10%) and browning at aw 0.75(>19%). The most ideal condition of the storage for red peppers was a 13∼15% water content and 60${\pm}$5% RH. The storage life for whole red peppers were 2.0 months at 40$^{\circ}C$, 13.6 months at 25$^{\circ}C$, 27.3 months at 15$^{\circ}C$, 30.0 months at 10$^{\circ}C$, and 65.0 months at -3$^{\circ}C$. During any storage period above, level of capsanthin, browning and capsaicin were changed for whole peppers. Browning appeared to be a crucial factor for marketable quality of stored red peppers. It was found that the level of capsaicin & capsanthin have a miner relationship with marketable quality for consumer. Storing red peppers in nitrogen and vacuum atmosphere packing condition was found to be better than storing them in air at various temperatures in terms of storage life and quality maintenance. The nitrogen gas packaged red peppers kept longer shelf life and better quality compared with vacuum packaging.