• Journal of the Korean Society of Propulsion Engineers
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• v.8 no.4
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• pp.84-90
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• 2004

A performance evaluation is made in terms of thrust, impulse bit. and specific impulses for a set of mono-propellant hydrazine thrusters producing 0.95 lbf of nominal thrust at an inlet pressure of 350 psia. With a brief description on the hot-firing test configuration and procedures. a typical data obtained from steady-state firing mode is given directly showing the variational behavior of propellant supply pressure, mass flow rate, vacuum condition, and thrust. The performance features are successfully compared to the reference criteria of 1-lbf standard mono-propellant rocket engine. Additionally. a statistical inter-thruster treatment is concisely depicted for the justification of selected thrusters as a grouped member of flight model for spacecraft propulsion system.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.392-392
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• 2010

In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from $NF_3$ remote plasmas was very effective in increasing the Si thinning rate due to the NO-induced enhancement of surface reaction but thinned Si surface became roughened significantly. Addition of Ar gas, together with NO gas, decreased root mean square (RMS) surface roughness of thinned Si wafer significantly. The process regime for the thinning rate enhancement with reduced surface roughness was extended at higher Ar gas flow rate. Si wafer thinning rate as high as $22.8\;{\mu}m/min$ and root-mean-squared (RMS) surface roughness as small as 0.75 nm could be obtained. It is expected that high-speed chemical dry thinning process has possibility of application to ultra-thin Si wafer thinning with no mechanical damage.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.216-216
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• 2010

이종접합 태양전지의 투명전도막으로 사용되는 ITO는 박막 증착시 Ar과 O2의 공정 가스비증가에 따라 일함수가 증가한다고 보고되어지고 있다. 이러한 일함수의 증가는 ITO와 n a-si:H과의 계면에서 barrier height를 낮춤으로써 hole injection을 원활하게 만들어줌으로써 이종접합 태양전지의 효율 향상을 기대할 수 있게 해준다. RF sputtering system으로 증착된 ITO 증착시 순수 Ar만으로 증착된 ITO와 0.1에서 0.5% 까지 미세산소함량으로 증착된 ITO의 단일막 특성과 이를 이종접합 태양전지에 적용하였을 때의 특성을 분석하였다. ITO의 단일막 전기적 특성 분석을 위하여 Hall measurement를 이용하였고 광학적 특성 분석을 위해 UV-Vis를 이용하였다. 또한 광전자 분광장치를 이용하여 일함수 변화를 측정하였다. 그리고 산소 함량에 따른 ITO 박막의 특성 변화를 통해 이종접합 태양전지의 광특성을 비교하였다. 전기적인 특성의 경우 0.1%의 산소함량에서 가장 낮은 비저항을 얻었고 이동도의 경우 산소 함량에 따라 점차 증가하게 되었다. 반면 Carrier concentration은 점차 감소하였다. 투과도의 경우 산소함량을 통해 제작된 ITO가 Ar만으로 제작된 ITO보다 500 nm 파장대에서 1% 정도의 높은 투과율을 갖게 되었다. 그리고 ITO 공정시 Ar 만으로 증착한 경우 4.3 eV의 일함수를 보이고 공정중 산소가 첨가됨으로써 4.8 eV 으로 일함수가 증가하게 되었고 이종접합 태양전지를 제작하여 Voc, Jsc, Eff 등이 각각 15mV, 2mA/cm2, 1.5% 정도의 광특성 향상을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.240-240
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• 2010

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (~5.2 eV) and extremely high dot density (${\sim}\;1.2{\times}10^{13}/cm^2$) was fabricated. Its structural effect for multiple layers was evaluated and compared to one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with 2-4 multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN)-tunneling could be a candidate structure for future flash memory.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.129.2-129.2
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• 2013

Electron injection enhancement at OLED (organic light-emitting diodes) cathode side has mostly been achieved by insertion of a low work function layer between metal electrode and emissive layer. We investigated the interfacial chemical reactions and electronic structures of alkaline-earth metal (Ca, Ba)/Alq3 [tris(8-hydroxyquinolinato)aluminium] and Ca/BaF2/Alq3 using in-situ X-ray & ultraviolet photoelectron spectroscopy. The alkaline-earth metal deposited on Alq3 generates two energetically separated gap states in sequential manner. This phenomenon is explained by step-by-step charge transfer from alkali-earth metal to the lowest unoccupied molecular orbital (LUMO) states of Alq3, forming new occupied states below Fermi level. The BaF2 interlayer initially prevents from direct contact between Alq3 and reactive Ca metal, but it is dissociated into Ba and CaF2. However, as the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with underlying Alq3. The influence of the multiple gap state formation by the interfacial chemical reaction on the OLED performance will be discussed.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.82-86
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• 2024

With the growing field and growing interest in transparent organic light-emitting diodes (TOLED) in the industry, various attempts are being made to improve the transmittance and performance of TOLED. TOLEDs are expected to be used in next-generation displays such as mixture reality (MR) displays, displayable windows, televisions, etc. This study presents a mesh TOLED with better transmittance and luminescence characteristics than existing TOLEDs through an in-situ vacuum deposition method that does not require additional processes such as photolithography and etching. In this study the mesh TOLED's cathode consists of Mg: Ag 1:9 electrode. Mesh patterns are interconnected with a 6 nm layer of interlayer. We approached transmittance improvement up to 30% at 555 nm at the cathode electrode with similar current injection character, also we improved lumination characteristics up to 23% at 7 V driving condition.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.178-184
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• 2012

Carbon coils could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and $H_2$ as source gases and $SF_6$ as an additive gas under thermal chemical vapor deposition system. The characteristics (formation density and morphology) of as-grown carbon coils were investigated as functions of additive gas flow rate and the cycling on/off modulation of $C_2H_2/SF_6$ flows. Even in the lowest $SF_6$ flow rate (5 sccm) in this work, the cycling on/off modulation injection of $SF_6$ flow for 2 minutes could give rise to the formation of nanosized carbon coils, whereas the continuous injection of $SF_6$ flow for 5 minutes could not give rise to the carbon coils formation. With increasing $SF_6$ flow rates from 5 to 30 sccm, the cycling on/off modulation injection of $SF_6$ flow confines the geometry for the carbon coils to the nanosized ones. Fluorine's role of $SF_6$ during the reaction was regarded as the main cause for the confinement of carbon coils geometries to the nano-sized ones.

• Journal of Powder Materials
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• v.17 no.4
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• pp.312-318
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• 2010

High speed steels (HSS) were used as cutting tools and wear parts, because of high strength, wear resistance, and hardness together with an appreciable toughness and fatigue resistance. Conventional manufacturing process for production of components with HSS was used by casting. The powder metallurgy techniques were currently developed due to second phase segregation of conventional process. The powder injection molding method (PIM) was received attention owing to shape without additional processes. The experimental specimens were manufactured with T42 HSS powders (59 vol%) and polymer (41 vol%). The metal powders were prealloyed water-atomised T42 HSS. The green parts were solvent debinded in normal n-Hexane at $60^{\circ}C$ for 24 hours and thermal debinded at $N_2-H_2$ mixed gas atmosphere for 14 hours. Specimens were sintered in $N_2$, $H_2$ gas atmosphere and vacuum condition between 1200 and $1320^{\circ}C$. In result, polymer degradation temperatures about optimum conditions were found at $250^{\circ}C$ and $480^{\circ}C$. After sintering at $N_2$ gas atmosphere, maximum hardness of 310Hv was observed at $1280^{\circ}C$. Fine and well dispersed carbide were observed at this condition. But relative density was under 90%. When sintering at $H_2$ gas atmosphere, relative density was observed to 94.5% at $1200^{\circ}C$. However, the low hardness was obtained due to decarbonization by hydrogen. In case of sintering at the vacuum of $10^{-5}$ torr at temperature of $1240^{\circ}C$, full density and 550Hv hardness were obtained without precipitation of MC and $M_6C$ in grain boundary.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.243-244
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• 2013

Over the past 15 years, several groups have incorporated radio-frequency quadrupole (RFQ) based instruments before the accelerator in accelerator mass spectrometry (AMS) systems for ion-gas interactions at low kinetic energy (＜40 eV). Most AMS systems arebased on a tandem accelerator, which requires negative ions at injection. Typically, AMS sensitivity abundance ratios for radioactive-to-stable isotope are limited to Xr/Xs ＞10^-15, and the range of isotopes that can be analyzed is limited because of theneed to produce rather large negative ion beams and the presence of atomic isobaric interferences after stripping. The potential of using low-kinetic energy ion-gas interactions for isobar suppression before the accelerator has been demonstrated for several negative ion isobar systems with a prototype RFQ system incorporated into the AMS system at IsoTrace Laboratory, Canada (Ontario, Toronto). Requisite for any such RFQ system applied to very rare isotope analysis is large transmission of the analyte ion. This requires proper phase-space matching between the RFQ acceptance and the ion beam phase space (e.g. 35 keV, ${\varphi}3mm$, +-35 mrad), and the ability to control the average ion energy during interactions with the gas. A segmented RFQ instrument is currently being designed at Korea Institute for Science and Technology (한국과학기술연구원, KIST). It will consist of: a) an initial static voltage electrode deceleration region, to lower the ion energy from 35 keV down to ＜40 eV at injection into the first RFQ segment; b) the segmented quadrupole ion-gas interaction region; c) a static voltage electrode re-acceleration region for ion injection into a tandem accelerator. Design considerations and modeling will be discussed. This system should greatly lower the detection limits of the 6 MV AMS system currently being commissioned at KIST. As an example, current detection sensitivity of 41Ca/Ca is limited to the order of 10^-15 while the 41Ca/Ca abundance in modern samples is typically 41Ca/Ca~10^-14 - 10^-15. The major atomic isobaric interference in AMS is 41K. Proof-of-principal work at IsoTrace Lab. has demonstrated that a properly designed system can achieve a relative suppression of KF3-/41CaF3- ＞4 orders of magnitude while maintaining very high transmission of the 41CaF3- ion. This would lower the 41Ca detection limits of the KIST AMS system to at least 41Ca/Ca~10^-19. As Ca is found in bones and shells, this would potentially allow direct dating of valuable anthropological archives and archives relevant to our understanding of the most pronounced climate change events over the past million years that cannot be directly dated with the presently accessible isotopes.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.37-43
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• 2009

Temperature and injection current dependence of electroluminescence(EL) spectral intensity of the $In_xGa_{1-x}N$/GaN multi-quantum wells(MQW) have been studied over a wide temperature range and as a function of injection current level. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents shows a drastic difference. This unique EL efficiency variation pattern with temperature and current can be explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields. Increase of the indium content in $In_xGa_{1-x}N$/GaN multiple quantum wells gives rise to a redshift of 80 meV and 22 meV for green and blue MQW, respectively. It can be explained by carrier localization by potential fluctuation of multiple quantum well and MQW structures also shows a keen difference owing to the different indium content in InGaN/GaN MQW.