• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 추계학술대회 논문집
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• pp.358-361
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• 2000

To reduce the leadtime for a new model according to the strict market requirements, automobile manufacturer begins to utilize 3-dimensional CAD based techniques such as DMU(Digital Mock-Up). RP(Rapid Prototyping), VE(Virtual Engineering). But, not so many satisfactory utilities have been introduced to deal with the emotional properties such as embossment on the surface of interior parts and touch from material characteristics in virtual environment. It is required to manufacture prototype parts to verify actual feeling of the passengers in real automobile. This paper suggests a methodology to enhance emotional property via embedding embossment on the surface of prototype car interior trim without deterioration of dimensional accuracy using RIM(Reaction Injection Molding) and vacuum forming method.

• 산업경영시스템학회지
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• 제35권2호
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• pp.196-203
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• 2012

When manufacturing die casting mold, generally, the casting layout design should be considered based on the relation between injection system, casting condition, gate system, and cooling system. Also, the extent or the location of product defects were differentiated according to the various relations of the above conditions. High-qualified products can be manufactured as those defects are controled by the proper modifications or the changes of die casting mold with the conditions. In this research, the proper manufacturing method was derived intensively for reducing the defect of the internal porosity of steering wheel housing which is very complicated to achieve a good mold design. The method was also derived for minimizing and for guaranteeing the product quality through the analysis of the casting problem and the deduction of alternative plans.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.328.1-328.1
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• 2014

MOSFET degradation의 대부분은 hot-carrier injection에 의한 interface state (Dit)의 생성에서 비롯되며 따라서 본 연구에서는 신뢰성에 대한 한 가지 방법으로 Charge pumping method를 이용하여 MOSFET의 interface trap(Dit)의 변화를 측정하였다. 소스와 드레인을 ground로 묶고 게이트에 펄스를 인가한 후 Icp를 측정하여 Dit를 추출하였다. 온도를 293~343 K까지 5 K씩 가변했을 때 293K의 Icp(${\mu}A$)는 0.12 nA 313 K는 0.112 nA 343 K는 0.926 nA이며 Dit (cm-1/eV-1)는 $1.61{\times}10^{12}$ (Cm-2/eV-1) $1.49{\times}10^{12}$ (Cm-2/eV-1) $1.23{\times}10^{12}$ (Cm-2/eV-1)이다. 측정결과 Dit는 Icp가 높은 지점에서 추출되며 온도가 높아지게 되면 Icp전류가 낮아지고 Dit가 줄어드는 것을 볼 수 있다. 온도가 올라가게 되면 carrier들이 trap 준위에서 conduction band 위쪽에 이동하게 되어서 interface에 trap되는 양이 작아지게 된다. 그래서 이때 Icp를 이용해 추출한 Dit 는 실제로 trap의 양이 줄어든 것이 아니라 Thermal excess 현상으로 인해 측정되는 Icp의 양이 줄어든 것으로 분석할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.121.1-121.1
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• 2014

Recently, much attention has been given to plasma production under liquid and its applications [1]. However, most of plasma production techniques reported so far utilize high voltage dc, ac, rf or microwave power [2], where damage to discharge electrodes and small discharge volume are remained issues. As an alternative of plasma production method under liquid, we have proposed pulsed microwave excited plasma using slot antenna, where damage to the slot electrode can be minimized and plasma volume can be increased. We have also reported improvement of treatment efficiency with use of reduced-pressure condition during the discharge [3]. To realize low pressure conditions in liquid, various alternative technique can be considered. One possible technique is simultaneous injection of microwave power and ultrasonic wave. Ultrasonic wave induces pressure fluctuation with the wave propagation and is so far used for cavitation production in the water. We propose utilization of reduced pressure induced by ultrasonic cavitation for improvement of the plasma production. Correlation between the plasma production and the ultrasonic power will be discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.492-492
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• 2014

On account of the good conductivity and optical properties, TCO is generally used in silicon heterojunction solar cell since the emitter material, hydrogenated amorphous silicon (a-Si:H), of the solar cell has low conductivity compare to the emitter of crystalline silicon solar cell. However, the work function mismatch between TCO layer and emitter leads to band-offset and interfere the injection of photo-generated carriers. In this study, work function engineering of TCO by oxygen reactive sputtering method was carried out to identify the trend of band-offset change. The open circuit voltage and short circuit current are noticeably changed by work function that effected from variation of oxygen ratio.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.133-133
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• 2010

중성입자빔 입사장치(neutral beam injection, NBI)의 중성빔 에너지 효율은 이온원의 수소 이온밀도 분율이 결정한다. 이온원에서 만들어진 $H^+$, $H_2^+$ 그리고 ${H_3}^+$는 중성화 과정(neutralization) 중 해리(dissociation) 때문에 각각 입사 에너지의 1, 1/2 그리고 1/3을 가진 중성입자가 된다. 중성빔 에너지 효율 제고하기 위해서는 이온원의 전체 이온 중 단원자 수소 이온 밀도 증가가 필요하다. 유도결합형 수소 플라즈마 이온원에서 RF 안테나 주파수에 따른 플라즈마 밀도와 단원자 수소 이온 밀도 비율 변화를 관찰하였다. RF 플라즈마에서 가스 압력이 결정하는 전자의 운동량 전달 충돌 주파수 대비 높은 RF 안테나 주파수(13.56 MHz)와 낮은 RF 안테나 주파수(수백 kHz)의 전력을 인가하였으며, Langmuir 탐침, 안테나 V-I 측정기 그리고 QMS(quadrupole mass spectrometer)을 이용하여 플라즈마 특성을 진단하였다. 플라즈마 밀도와 수소 이온 밀도 분율은 플라즈마 가열 메커니즘과 수소 플라즈마 내 반응 메커니즘에 의해 결정된다. 플라즈마 가열 메커니즘에 따른 실험 결과에 대한 RF 안테나 주파수 효과는 플라즈마 트랜스포머 회로 모델을 통해 해석하였으며, 수소 플라즈마 내 반응은 0-D 정상 상태의 입자 및 전력 평형 방정식 결과로 해석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.600-600
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• 2012

실리콘 이종접합 태양전지는 diffused dopant를 이용하여 high conductivity의 emitter를 가지는 기존의 crystalline silicon 태양전지와는 다르게 a-Si:H를 이용한 low conductivity emitter 때문에 TCO를 front electrode 및 anti-reflection layer로 사용한다. 하지만 TCO와 emitter사이의 work function mismatch에 의한 band-offset이 발생하고 photo-generation된 carrier의 injection을 막아 효율 상승을 제한하게 된다. 본 연구는 산소 반응성 스퍼터링을 통한 front TCO의 일함수 변경과 이에 따른 TCO와 emitter 계면에 존재하는 band-offset 변화에 대하여 분석하였다. 특히 산소 분압에 따른 front TCO의 일함수 변화에 따라 개방전압 및 단락전류 변화가 두드러지게 나타났으며, 직렬저항 성분 변화에 따른 충진률 변화에 따른 효율상승을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.318-318
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• 2011

Etching of an ultrathin aluminum oxide film on NiAl(110) substrate by methanol is studied by home-built scanning tunneling microscopy at room-temperature. We deposited liquid methanol on thin alumina film by using a high speed solenoid valve suitable for deposition of thermally unstable molecules. It is found that only the reflection domain boundary between two domains was preferentially etched by methanol. Since the reflection domain boundary has many oxygen vacancies and irregular structures, judging from the fact, we assume that oxygen vacancies cause the chemically reactive phenomena of methanol in reflection domain boundary on an alumina film. The reactivity of the reflection domain boundary is attributed to the oxygen vacancies due to irregular structures. Similar reactivity is found on the oxygen deficient alumina produced on top of the intact alumina.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.108-108
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• 2012

High-performance GaN-based light emitting diodes (LEDs) with high efficiency and excellent reliability have been of technological importance forapplications in full color display, automotive lighting, and solid state lighting. To realize high-performance and excellent-reliability LEDs, various technologies such as surface texturing, transparent conducting oxide, surface Plasmon, highly p-conduction layer, current blocking layer, photon-enhanced layer, and nanostructures have been extensively investigated. Among them, advanced core technologies based on how to suppress surface leakage and current crowding, how to enhance current injection efficiency and output power, and how to resist electrostatic damage will be displayed and discussed using our reported and preliminary results. New approaches like integrated LEDs will be also introduced and discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.428-428
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• 2013

Red color light emitting diodes were fabricated using CdSe/CdS/ZnS quantum dots (QDs). Patterned indium-tin-oxide (ITO) was used as a transparent anode, and oxygen plasma treatment on a surface of ITO was performed. Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was spin coated on the ITO surface as a hole injection layer. Then CdSe/CdS/ZnS QDs was spin coated and thermal treatment was performed for the cross-linking of QDs. TiO2 was coated on the QDs as an electron transport layer, and 150 nm of aluminum cathode was formed using thermal evaporator and shadow mask. The device shows a pure red color emission at 606 nm wavelength. Device characteristics will be presented in detail.