• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.55-61
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• 2017

Graphene, with a carrier mobility achieving up to $140,000cm^2/Vs$ at room temperature, makes it an ideal material for application in semiconductor devices. However, when the metal comes in contact with the graphene sheet, an energy barrier forms at the metal-graphene interface, resulting in a drastic reduction of the carrier mobility of graphene. In this review, the various methods of forming metal-graphene covalent contacts to lower the contact resistance are discussed. Furthermore, the graphene sheet in the area of metal contact can be cut in certain patterns, also discussed in this review, which provides a more efficient approach to forming covalent contacts, ultimately reducing the contact resistance for the realization of high-performance graphene devices.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.485-492
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• 2006

Two new copper(I) complexes with organic ligands, $[Cu^I(hfac)]_2(DVTMSO)$ and $[Cu^I(hfac)]_2(HD)$ (hfac=hexafluoroacetylacetonate, DVTMSO=1,2-divinylte-tramethyl-disiloxane, HD=1,5-hexadiene) were synthesized and used for copper metal-organic chemical vapor deposition. In these compounds, two Cu(hfac) fragments are bonded by one neutral ligand forming unusual structure with respect to other Cu(I) complexes. The compounds exhibited relatively high volatility and stability when compared to other copper(I) precursors. By using the reported compounds as precursors, a continuous Cu layer was not formed but the Cu islands were only observed. And the shape and size of Cu islands are significantly changed as a function of the substrate temperature.

• Resources Recycling
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• v.19 no.5
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• pp.31-43
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• 2010

To fabricate porous SiC candle filter for filtration facility of the IGCC system, the candle type filter preforms were fabricated by ramming and vacuum extrusion process. A commercially available ${\alpha}$-SiC powders with various particle size were used as starting raw materials, and $44\;{\mu}m$ mullite, $CaCO_3$ powder were used as non-clay based inorganic sintering additive. The candle typed preforms by ramming process and vacuum extrusion were sintered at $1400^{\circ}C$ for 2h in air atmosphere. The effect of forming method and particle size of filter matrix on porosity, density, strength (flexural and compressive strength) and microstructure of the sintered porous SiC candle tilters were investigated. The sintered porous SiC filters which were fabricated by ramming process have more higher density and strength than extruded filter in same particle size of the matrix, and its maximum density and 3-point bending strength were $2.00\;g/cm^3$ and 45 MPa, respectively. Also, corrosion test of the sintered candle filter specimens by different forming method was performed at $600^{\circ}C$ for 2400h using IGCC syngas atmosphere for estimation of long-term reliability of the candle filter matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• Transactions of Materials Processing
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• v.18 no.3
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• pp.217-222
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• 2009

Automobile industries have been focusing their efforts on the development of exhaust manifolds using high temperature stainless steels. Exhaust manifolds fabricated with stainless steels can be categorized into tubular and cast ones. The former is usually manufactured by forming and welding process and the latter by vacuum casting process. In the present study, high temperature mechanical properties of 5 austenitic and 4 ferritic stainless steels were investigated by performing a series of high temperature tensile and low cycle fatigue tests. One of the austenitic stainless steels was vacuum cast and the others sand cast. Fatigue life of ferritic stainless steels was higher than that of austenitic ones.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.24-29
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• 1999

The characteristic behaviors of CH3Br were examined first for the dry etching of polysilicon in a Cl2/CH3Br/O2 plasma. CH3Br is revealed one of the excellent additive gases to control anisotropy of etching profile and to give no undercutting for various typed of polysilicons. CH3Br acts as a passivation precursor on the side wall in etch cavity by forming polymer-like films such as CHxBry(x+y=1,2). The decrease of etch selectivity due to the reaction if the C-containing species from CH3Br with the surface O atoms of SiO2 was overcome by the addition of O2 into plasma, resulting that the selectivity increased by 2~3 times. According to the results of optical emission signals, CH3Br should be dissociated into several fragments to give more hydrogen atoms than bromine atoms in our helical resonator system.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.343-343
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• 2008

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.10a
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• pp.314-317
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• 2007

Domestic automobile industries have been focusing their effort on development of exhaust manifolds using high temperature stainless steel. Exhaust manifolds fabricated with stainless steels can be categorized into tubular and cast ones. The former is usually manufactured by forming and welding process and the latter by vacuum casting process. In the present study, high temperature mechanical properties of 5 austenitic stainless steels, one was sand cast and the others vacuum cast, were investigated by performing a series of high temperature tensile tests and high temperature low cycle fatigue tests.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.21-27
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• 2003

Micro-arc discharge oxidation (MDO) is a cost-effective plasma electrolytic process which can be used to improve the wear and corrosion resistance of Al-alloy parts by forming a alumina coating on the component surface. However, the MDO coated Al-alloy components often exhibit relatively high friction coefficients and low wear resistance fitted with many counterface materials, additionally, the pitting corrosion for the MDO coated AI-alloy components, especially for a thinner alumina coating, often occurs in atmosphere circumstance due to the porous alumina coats. Therefore, a duplex treatment, combining a MDO coated ahumina thin layer with a TiN coating, prepared by magnetron sputtering (MS), has been investigated. The Vicker's microhardness, pin-on-disc, electrochemical measurement, salt spray, XRD and SEM tests were used to characterize and analyze the treated samples. The work demonstrates that the MDO/MS coated samples have a combination of a very low friction coefficient and good wear resistance as well as corrosion since the micro-holes on alumina coating are partly or fully covered by TiN material.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.151-151
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• 2000

We have studied the atomic structure of Si(100)-c(4$\times$4) reconstruction using scanning tunneling microscopy(STM). The c(4$\times$4) reconstruction can be formed by annealing the hydrogen exposured surface at temperatures between 850 and 960 K. At this temperature ranges, adsorbed hydrogen atoms are all desorbed. Therefore, the c(4$\times$4) reconstruction is due to the Si dimers on surface. The filled and empty state images of the STM were interpreted in terms of Si dimers in c(4$\times$4) primitive cell forming the reconstruction. Based on the STM images and hydrogen adsorption experiment on c(4$\times$40 surface, we suggest that Si dimers in c(4$\times$40 unit cell are perpendicular ad-dimer to the underlying Si dimer rows.