• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.390-396
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• 1998

Neutral stream was generated from Helicon plasma source and was applied to etch silicon for the purpose of preventing physical and electrical damages from the bombardment of charged particles with high translation energy. By installing a permanent magnet and applying positive bias beneath the substrate, the cusp-magnetic and electric fiddles were generated in order to remove the charged particles from the downstream plasma. As a result, the electron density and ion density in the vicinity of the substrate were reduced by 1/1000 and 1/10, respectively. The directional etching of silicon was observed and the etch rate was found to be very low to below 100 $\AA$/min at a pressure of $8.5{\times}10^{-4}$ Torr, when $Cl_2$ and 10% $SF_{sigma}$ etchant gases were used.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.16-19
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• 2006

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR characteristic of self-assembled 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto $pre-treatment(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1 mM/1 solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a 0.1 ${\mu}M/l$ solution of 4.4'-di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2,$ and finally blown dry with N_2. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2 V to +2 V with 298 K temperature. The vacuum condition was $6{\time}10^{-8}$ Torr. As a result, we found the NDR voltage of the 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate were $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ V(positive region). respectively.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1844-1846
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• 2005

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR property of self-assembled 4,4- Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment$(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/l$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2V to +2V with 299K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found the NDR voltage of the nitro-benzene is $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ (positive region), respectively.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.26 no.2
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• pp.192-197
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• 1981

Alfalfa (Medicago sativa L. cv. Luna) seeded in agar was inoculated with two strains of Rhizobium meliloti isolated from root nodules of alfalfa for assessment of nodulation. The seedling growth after six weeks was remarkably increased by adding each rhizobia strains into agar media and also by nitrate application (70ug N/ml), but there was no significant difference among them. Nodulations started one week after inoculation and increased its numbers and sizes as seedling grew. Therefore, the two strains isolated from alfalfa root were concluded to be effective strains. For determining seed inoculation method the same cultivar was inoculated with both rhizobia strains using different inoculation methods such as broth-vacuum, peat-adhesive, peat & lime pelleting. They were seeded in pots of river sand and supplied with culture solution excluded nitrogen. The peat & lime pelleting was recognized the best method in both of nodulation and seedling growth after eight weeks growth. There were significant correlations between the weight of nodules and the shoot or root dry weight of alfalfa in both rhizobia strains.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.82-87
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• 1998

In the oxidation process of the $NH_3/O_2$ oxidation method, adding $NH_3$ gas to $O_2$ gas, the detected outlet gases in the reaction quartz chamber are N2, $O_2$ and $H_2O$ and in addition, a very small quantity of $CO_2$, NO and $NO_2$ are detected. Two kinds of species ($O_2$ and H2O) contribute to oxidation, so the growth rate is determined by oxidation temperature and by also partial pressure of the NH3 and $O_2$ gases. The slop of growth rate is identified to be medial and in parallel between that of the dry and wet oxidation. Auger electron spectroscopy (AES) indicates that $NH_3/O_2$ oxide film has a certain stoichiomerty of $SiO_2$, this oxidation method restrains the generation of defects in the $SiO_2/Si$ interface, minimizing fixed charges. The breakdown voltage of $NH_3/O_2$ oxide film (470$\AA$) is 57.5 volts, and the profile of the C-V curve including flat band voltage (0.29 volts) agree with the ideal curve.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.88-93
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• 1998

The fabrication process and emission characteristics of gated silicon field emitter arrays(FEAs) using chemical-mechanical-polishing (CMP) method are described. Novel fabrication techniques consisting of two-step dry etching with oxidation of silicon and CMP processes were developed for the formation of sharp tips and clear-cut edged gate electrodes, respectively. The gate height and aperture could be easily controlled by varying the polishing time and pressure in the CMP process. We obtained silicon FEAs having self-aligned and clear-cut edged gate electrode opening by eliminating the dishing problem during the CMP process with an oxide mask layer. The tip height of the finally fabricated FEAs was about 1.1 $\mu$m and the end radius of the tips was smaller than 100 $\AA$. The emission current meaured from the fabricated 2809 tips array was about 31 $\mu$A at a gate voltage of 80 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.245-245
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• 2010

최근에 반도체 소자 및 마이크로머신, 바이오센서 등에 사용되는 미세 부품에 대한 연구 개발이 활발히 진행되고 있다. 미세 부품을 제작하기 위한 MEMS 공정은 대표적으로 화학용액을 이용한 습식식각, 플라즈마를 이용한 건식식각 등이 주를 이룬다. Micro blaster는 경도가 강하고 화학적 내성을 가지며 용융점이 높아 반도체 MEMS 공정에 어려움이 있는 기판을 다양한 형태로 식각 할 수 있는 기계적인 식각 공정 기술이라 할 수 있다. Micro blaster의 식각 공정은 고속의 날카로운 입자가 공작물을 타격할 때 입자의 아래에는 고압축응력이 발생하게 되고, 이 고압축 응력에 의하여 소성변형과 탄성변형이 발생된다. 이러한 변형이 발전되어 재료의 파괴 초기값보다 크게 되면 크랙이 발생되고, 점점 더 발전하게 되면 재료의 제거가 일어나는 단계로 이루어진다. 본 연구에서는 micro blaster 장비를 반도체 MEMS 공정에 적용하기 위한 식각 특성에 관하여 확인하였다. Micro blaster 장비와 식각에 사용한 파우더는 COMCO INC. 제품을 사용하였다. Micro blaster를 $Al_2O_3$ 파우더의 입자 크기, 분사 압력, 기판의 종류, 노즐과 기판과의 간격, 반복 횟수, 노즐 이동 속도 등의 공정 조건에 따른 식각 특성에 관하여 분석하였다. 특히 실제 반도체 MEMS 공정에 적용 가능한지 여부를 확인하기 위하여 바이오 PCR-chip을 제작하였다. 먼저 glass 기판과 Si wafer 기판에서의 식각률을 비교 분석하였고, 이 식각률을 바탕으로 바이오 PCR-chip에 사용하게 될 미세 홀과 미세 채널, 그리고 미세 챔버를 형성 하였다. 패턴을 형성하기 위하여 TOK Ordyl 사의 DFR(dry film photoresist:BF-410)을 passivation 막으로 사용하였다. Micro blaster에 사용되는 파우더의 직경이 수${\mu}m$ 이상이기 때문에 $10\;{\mu}m$ 이하의 미세 채널과 미세홀을 형성하기 어려웠지만 현재 반도체 MEMS 공정 기술로 제작 연구되어지고 있는 바이오 PCR-chip을 직접 제작하여 micro blaster를 이용한 반도체 MEMS 공정 기술에 적용 가능함을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.335-335
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• 2010

한국표준과학연구원 진공센터에서는 국제규격에 바탕을 둔 저진공펌프 종합특성평가시스템을 구축하여 $1100mbar\;{\sim}\;10^{-3}mbar$ 압력 영역에서의 저진공펌프(roots, dry 등)류의 종합특성평가를 시행하고 있다. 저진공펌프 종합특성평가시스템은 국제적 절차에 따른 신뢰성을 바탕으로 구축하고 있으나, 한국표준과학연구원 진공센터 뿐만 아니라, 국내에서도 고진공 종합특성평가 시스템을 구축 하고 있지 않다. 이에 반도체/디스플레이 등 첨단 공정에서 진공 환경을 조성하는 핵심장비인 고진공펌프의 종합특성평가시스템을 개발하고자 터보펌프(TMP) 1000L/s 급의 database를 구축 하였다. 터보펌프(TMP)는 throughput method와 orifice method 두 가지 방법을 병행하여 pumping speed 측정한다. orifice method는 일종의 미세유량 측정 장치이며, 실험값과 계산값 유량의 오차 범위가 작고 신뢰성을 확보하면 throughput method 만으로 측정할 수 있다. Througput method는 $10^{-6}mbar$ 압력 이상의 영역을 측정하며, ultimate pressure 및 $150^{\circ}C$의 bake-out 을 진행하여 base pressure을 측정 할 수 있으며, $10^{-6}mbar$ 압력 이상의 pumping speed를 측정 할 수 있다. 이에 따른 정압형 유량시스템을 개발 중에 있으며, inlet pressure와 outlet pressure를 이용한 compression ratio를 측정 한다. Orifice method는 ultimate pressure와 base pressure을 측정하며, leak valve를 이용한 컨덕턴스(C)로 pressure ratio을 이용하여 유량값을 계산하며, $10^{-6}mbar$ 압력 이하의 pumping speed를 측정할 수 있다. 또한 throughput method와 orifice method의 pumping speed 뿐만 아니라 소비전력 및 소음, 진동, 온도 등 특성평가 관련 사항들의 전반적인 사항을 평가하여 터보펌프(TMP) 1000L/s 급의 database를 구축한다. 향후 예비 실험을 통한 고진공펌프의 종합특성평가시스템을 완비해 나가며, 고진공펌프 종합 특성평가시스템을 통하여 국제적으로 공인받을 수 있는 평가기준을 확립하고 그 기준에 의한 진공/기계적 성능의 전방위적인 종합특성진단과 공정대응성 평가 등 국제적 기술 신뢰성을 확보하고자 한다.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.310-317
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• 2009

Vertical wet equipment for the BGA develop process was newly developed substituted for conventional horizontal wet equipment. The benefits of vertical equipment are that the pattern damages generated by the collision between the patterns and transferring rollers can be eliminated because the direct contact between the equipment's transferring units and the soft dry film patterns does not occurs. Taguchi experiment was conducted to optimize the process characteristics for the vertical equipment. The experiment was organized as the smaller the better problem which includes adequate uncontrollable factor and controllable factors. The uncontrollable factors are the 4 sides of two panels which are loaded to the equipment at the same time. By the analysis of the experiment, temperature of the develop chemicals and develop spraying time are analyzed as the main controllable factors. Finally, line pattern's minimum width which is not damaged for the develop process was improved from $13.8{\mu}m$ for the horizontal equipment to $10.4{\mu}m$ for the vertical equipment. And dot pattern's minimum width is improved from $22.1{\mu}m$ to $16.3{\mu}m$.