• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.1-273.1
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• 2014

Graphene, a two dimensional plane structure of $sp^2$ bonding, has been promised for a new material in many scientific fields such as physics, chemistry, and so on due to the unique properties. Chemical vapor deposition (CVD) method using transitional metals as a catalyst can synthesize large scale graphene with high quality and transfer on other substrates. However, it is difficult to control the number of graphene layers. Therefore, it is important to manipulate the number of graphene layers. In this work, homogeneous solid solution of Cu and Ni was used to control the number of graphene layers. Each films with different thickness ratio of Cu and Ni were deposited on $SiO_2/Si$ substrate. After annealing, it was confirmed that the thickness ratio accords with the composition ratio by X-ray diffraction (XRD). The synthesized graphene from CVD was analyzed via raman spectroscopy, UV-vis spectroscopy, and 4-point probe to evaluate the properties. Therefore, the number of graphene layers at the same growth condition was controlled, and the correlation between mole fraction of Ni and the number of graphene layers was investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.425.2-425.2
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• 2014

$TiO_2$ possesses great photocatalytic properties but absorbs only UV light owing to high band gap energy (Eg = 3.2 eV). By narrowing the band gap through doping a metal ion, the photocatalytic activity can be enhanced in condition of the light of a higher than 365 nm wavelength. Main purpose for this study is to evaluate the activities of metal doped $TiO_2$ for degrading the volatile organic compounds (VOCs); p-xylene is chosen in the VOC removal test. Vanadium is selected in this study because an ionic radius of vanadium is almost the same as titanium ion and vanadium can be easily doped into $TiO_2$. V-doped $TiO_2$ was synthesized by sol-gel methods and compared with pure $TiO_2$. Pure TiO2 powder and V-doped $TiO_2$ powder were coated on glasses by spray coating method. UV-Visible spectrophotometer was used for the measurement of the band gap changes. VOC concentration degradation level was tested with using various UV light sources in an enclosed chamber. Catalytic activities of prepared samples were evaluated based on the experimental results and compared with coated pure $TiO_2$ sample.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.341.1-341.1
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• 2014

In the advanced material for the next generation display device, transparent amorphous oxide semiconductors (TAOS) are promising materials as a channel layer in thin film transistor (TFT). The TAOS have many advantages for large-area application compared with hydrogenated amorphous silicon TFT (a-Si:H) and organic semiconductor TFT. For the reasonable characteristics of TAOS, The a-IGZO has the excellent performances such as low temperature fabrication (R.T~), high mobility, visible region transparent, and reasonable on-off ratio. In this study, we investigated how the electric characteristics and physical properties are changed as various oxygen ratio when magnetron sputtering. we analysis a-IGZO film by AFM, EDS and I-V measurement. decreasing the oxygen ratio, the threshold voltage is shifted negatively and mobility is increasing. Through this correlation, we confirm the effect of oxygen ratio. We fabricated the bottom-gate a-IGZO TFTs. The gate insulator, SiO2 film was grown on heavily doped silicon wafer by thermal oxidation method. a-IGZO channel layer was deposited by RF magnetron sputtering. and the annealing condition is $350^{\circ}C$. Electrode were patterned Al deposition through a shadow mask(160/1000 um).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.107.1-107.1
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• 2014

We have developed and commercialize a time-of-flight - medium energy ion scattering spectrometry (TOF-MEIS) system (model MEIS-K120). MEIS-K120 adapted a large solid acceptance angle detector that results in high collection efficiency, minimized ion beam damage while maintaining a similar energy resolution. In addition, TOF analyzer regards neutrals same to ions which removes the ion neutralization problems in absolute quantitative analysis. A TOF-MEIS system achieves $7{\times}10^{-3}$ energy resolution by utilizing a pulsed ion beam with a pulse width 350 ps and a TOF delay-line-detector with a time resolution of about 85 ps. TOF-MEIS spectra were obtained using 100 keV $He^+$ ions with an ion beam diameter of $10{\mu}m$ with ion dose $1{\times}10^{16}$ in ordinary experimental condition. Among TOF-MEIS applications, we report the quantitative compositional profiling of 3~5 nm CdSe/ZnS QDs, As depth profile and substitutional As ratio of As implanted/annealed Si, Ionic Critical Dimension (CD) for FinFET, Direct Recoil (DR) analysis of hydrogen in diamond like carbon (DLC) and InxGayZnzOn on glass substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.159.1-159.1
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• 2014

We report a simple method for preparing hydrophobic mesoporous silica and its use as a pre-concentrating agent of gas analytes. Hydrophobic mesoporous silica was prepared by coating PDMS (polydimethylsiloxane) thin layer on commercial mesoporous silica with thermal deposition method in a sealed chamber. By using this method, we were able to coat PDMS layer on inner-walls of pores larger than 15 nm. Also, contact angle measured on a surface consisting of PDMS-coated mesoporous silica exceeded $150^{\circ}$, implying that the surface has high water repellency. Pre-concentration ability of PDMS-coated mesoporous silica and baremesoporous silica was tested under dry and humid conditions. Adsorption and molecular desorption of gas analytes was much enhanced by PDMS-coating on mesoporous silica under both dry and humid conditions. Therefore we suggest that PDMS-coated mesoporous silica can be an efficient pre-concentration agent in order to enhance sensitivity of various detectors.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.955-961
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• 2002

2.7vol%TiNi/6061 Al composites with TiNi shape memory alloy as reinforcement were fabricated by vacuum hot press. It was investigated by OM, SEM, EPMA and XRD analysis for the behavior of diffusion layer formation on various heat treatment condition. Thickness of diffusion layer was increased proportionally according to heat treatment time. The layer was formed by the mutual diffusion of TiNi and Al. The diffusion rate from TiNi fiber to Al matrix was faster than that of reverse diffusion path. The more diffused layer was formed in Al matrix. The diffusion at interface layer was consisted of $A1_3$Ti, $Al_3$Ni analyzed by EPMA, XRD results.

• KSBB Journal
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• v.19 no.3
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• pp.174-177
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• 2004

A method of collection and long-term storage of viable lily (Lilium longiflorum) pollen grains were developed for their in vitro growth and transformation in consistency. Petroleum ether, n-heptane, cyclohexane and benzene, as pollen collection medium, were determined less toxic to pollen growth in vitro than others tested. Pollen grains, however, lost their growth activity if stored in these solvents more than a week, So, a serial performance, that is, pollen grain collection in these solvents, air-drying and immediate transfer to low temperature condition was determined desirable for keeping the viability much longer. Pollen grains from this storage showed a successful transformation in vitro with a cDNA encoding tissue plasminogen activator (TPA) protein using Agrobacterium via vacuum infiltration according to western blotting analysis.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.12
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• pp.28-32
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• 2010

Technical demands for aspheric glass lens formed in market increases its application from simple camera lens module to fiber optics connection module in optical engineering. WC is often used as a metal core of the aspheric glass lens, but the long life time is issued because it fabricated in high temperature and high pressure environment. High hard thin film coating of lens core increases the core life time critically. Diamond Like Carbon(DLC) thin film coating shows very high hardness and low surface roughness, i.e. low friction between a glass lens and a metal core, and thus draw interests from an optical manufacturing industry. In addition, DLC thin film coating can removed by etching process and deposit the film again, which makes the core renewable. In this study, DLC films were deposited on the SiC ceramic core. The process variable in FVA(Filtered Vacuum Arc) method was the substrate bias-voltage. Deposited thin film was evaluated by raman spectroscopy, AFM and nano indenter and measured its crystal structure, surface roughness, and hardness. After applying optimum thin film condition, the life time and crystal structure transition of DLC thin film was monitored.