• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.194-200
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• 2001

In this study, the optical properties of diamond-like carbon(DLC) films, which was synthesized by 13.56 MHz rf plasma enhanced chemical vapor deposition system(PECVD), were investigated. We observed the variation of the transmittance and optical band gap with respect to deposition condition. The change of the transmittance and optical band gap of the DLC films were investigated as a function of RF power, working pressure, and additional gas. The optical band gap decreased with the increase of RF power and working pressure. We could verify the bond structures change of DLC films by observing the content of hydrogen using FT-IR spectroscopy. And the addition of hydrogen and nitrogen decreased the optical band gap by the breakage of C-H bond of DLC films during the deposition.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.64 no.3
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• pp.130-137
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• 2015

This study is about the controller development of the Electric Operating Cell(EOC) which will replace the Mechanical Operated Cell(MOC) of the vacuum circuit breaker which has been used in the power plant and the performance test for the developed controller. The controller developed through this study was manufactured considering the harsh installation environment and electrical condition of the power plant, and the controller performance certification test for confirming the product reliability was taken to know whether or not to withstand fully in various electrical and mechanical problems. Items for performance certification test were AC power frequency voltage withstand test, combined surge immunity test, 1 [MHz] oscillatory SWC test, fast transient SWC test, radiated electromagnetic interference test, vibration test. As a result, all tests has passed an examination without malfunction.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.322-326
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• 1999

We have investigated the growing process of a silicon film on the $CeO_2/Si$ surface. The silicon was deposited by using electron beam deposition method. The $CeO_2$(111) film was grown on a (111)-oriented silicon substrate at $700^{\circ}C$ at oxygen [partial pressure of $5\times10^{-5}$ Torr. To investigate the condition of epitaxial growth of si films on the $CeO_2/Si$ substrate, we deposited Si at various temperature니 The overlayer silicon was characterized by using x-ray diffraction(XRD). double crystal x-ray diffraction (DCXRD), and transmission electron microscopy (TEM). At temperature higher than $690^{\circ}C$, $CeO_2$ layer was observed at the $CeO_2/Si$ interface, which was formed by chemical reaction with silicon and oxygen dissociated from $CeO_2$. When silicon was deposited on the $CeO_2/Si$ at $620^{\circ}C$, silicon grew epitaxially along the (111)-direction.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.261-266
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• 1998

Since the particles are highly charged in process plasmas, the dynamics of the particles are concerned principally with the effect of the charging amount and polarity. In order to investigate the charging effect of the particles in the plasmas, the known sizes of the mono-dispersed particles with 0.05$\mu\textrm{m}$, 0.07$\mu\textrm{m}$, 0.1$\mu\textrm{m}$and 0.2$\mu\textrm{m}$ diameter are introduced into the DC air-plasmas. The characteristics of the charged particles are measured with a Faraday cup. Results show that the particle charging polarity depends on the concentrations and sizes of the particles and the condition of plasma generation, operating pressure, and power. It is also found that the number of charges per a particle is in the ranges of $10^3$~$ 10^5$.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.201-207
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• 1998

We have investigated about interface characteristics between ZnO thin films and metal electrodes when ZnO and metal electrodes were fabricated as piezoelectric vibrators. At this, ZnO thin films were deposited by rf reactive magnetron sputtering method. After fabricating piezoelectric vibrator of Cr/ZnO/Cr structure with optimum condition, we analyse interface characteristics between ZnO thin films and metal electrodes by I-V measurement. AES depth profile, SEM and C-V measurement. From these measurements we found that ZnO piezoelectric vibrators showed good property when they fabricated as Cr/$SiO_2$/ZnO/Cr structure. And we could confirm these things by driving, and measuring vibration displacement of piezoelectric vibrator with $SiO_2$diffusion barrier.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.567-567
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• 2013

Surface plasmon resonance is the enhancement of electromagnetic wave caused by oscillation on the metal and dielectric interfaces. Surface plasmons with nanohole arrays provides an enhancedresonance for the specific wavelengths of interests. Asymmetric array of nanoscale structures can enable orientation dependent shift of resonance wavelengths when combined with the control of polarization for incident visible light, thus providing color tunability. Appropriate lattice constants along the direction of polarization in rectangular nanohole arrays can determine the resonance condition generating red (R), green (G), and blue (B) colors and potentially be applied to display applications. In ourprevious report, we have optimized the ion beam nanomachining conditions to fabricate the nanostructures on the metal film. We apply the fabrication conditions to make nanoscale hole arrays using 100 nm thick gold layer on the glass substrate with the optimal design of periodicities along x, y, and diagonal directions of a=440 nm, b=520 nm, c=682 nm, and the hole diameter of d=200 nm. Using the reflective light in dark field mode of optical microscope, we can observe different colors. When the polarizer is paralleled along a, b, or c direction, the represented color is changed to R, G, and B, respectively. We further map the color using i1 to correlate the conditions of the nanohole arrays with their characteristic color.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.16-21
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• 2002

Selective epitaxial growth(SEG) of silicon were performed at low temperature under an ultraclean environment below $1000^{\circ}C$ using ultraclean $Si_2H_6$ and $H_2$ gases ambient in low pressure chemical vapor deposition(LPCVD). As a result of ultraclean processing, epitaxial Si layers with good quality were obtained for uniform and SEG wafer at temperatures range 600~$710^{\circ}C$ and an incubation period of Si deposition only on $SiO_2$ was found. Low-temperature Si selectivity deposition condition and epitaxy on Si were achieved without addition of HCl. The epitaxial layer was found to be thicker than the poly layer deposited over the oxide. Incubation period prolonged for 20~30 sec can be obtained by $O_2$addition. The surface morphologies & cross sections of the deposited films were observed with SEM, The structure of the Si films was evaluated XRD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.519-522
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• 2002

Ag (silver) can be used for YBa$_2$Cu$_3$O$\_$7-$\delta$/(YBCO) coated conductor tape as the substrate on which YBCO can be deposited directly because of the chemical compatibility of Ag with YBCO. We have fabricated rolled Ag tapes with various total reduction ratios and different thicknesses. As-rolled Ag tape was recrystallized at 750$^{\circ}C$ for 30min in air and vacuum of 10$\^$-3/ torr. The orientation distribution functions (ODF) calculated from three x-ray pole figures of as-rolled and recrystallized tapes were analysed. As the total reduction ratio increased from 94 to 98%, the development of {110}texture of as-rolled Ag improved. Under the present experimental condition, maximum {110}ODF value of Ag tape was obtained for the sample with 94% total reduction ratio which was recrystallized at 750$^{\circ}C$ for 30min in vacuum of 10$\^$-3/ torr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.215-217
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• 2016

For the improvement of the anti-pollution properties of porcelain electrical insulators, in this study, we have applied the functional film to the surface of insulator. The functional films were coated on the ceramic substrates which components were like the porcelain electrical insulator. The coating material was applied to ceramic substrate by spray coating method and then the film was cured at around $300^{\circ}C$ for 10 minutes with different gas ambient, such as $O_2$, $N_2$, and only vacuum. We have measured the contact angle of the coated surface, and obtained the lowest angle ($8.9^{\circ}$) and a strong hydrophilic property at vacuum condition. The anti-pollution properties were measured, revealing that as the contact angle decreased, the anti-pollution properties improved. The mechanical hardness and adhesion were both excellent regardless of the annealing ambient.

• Journal of Advanced Marine Engineering and Technology
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• v.26 no.1
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• pp.90-98
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• 2002

In this paper, the annealing heat treatments for the best corrosion resistant of Ti(Grade 2) were studied in a 3.5% NaCl solution by electrochemical methods. The annealing heat treatments were accomplished at 650, 700 and $750^{\circ}C$ with different time of 30min., 1hour and 2 hours in a vacuum condition. The obtained results are: 1) in the case of solution heat treated $930^{\circ}C$ for 2 hours in a vacuum and air, the corrosion potentials were -348.7 and -567. 1mV, and current densities 2.32 and $22.62\mu\textrm{A}$, respectively, 2) as increase both annealing heat treatment temperature 650, 700, $750^{\circ}C$ and time 30min., 1 hour, 2 hours, the corrosion potential were decreased, whereas corrosion current density increased, 3) in the case of cyclic polarization, the measured charges were increased as increasing solution heat treatment temperature and time, 4) on the bases of corrosion potential, current density and charge, the best annealing temperature and time were measured as $700^{\circ}C$ and 30min. for Ti(Grade 2) material.