• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.11a
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• pp.42-48
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• 1999

An experimental study was performed to discover the effect of environment on the tribological behavior of Si-incorporated diamond-like carbon(Si-DLC) film slid on a steel ball. The films were deposited on Si(100) wafers from radio-frequency glow discharge of mixtures of benzene and dilute silane gases. Experiments using a ball-on-disk test-rig was performed under vacuum, dry air and ambient air conditions. It was observed that coefficient of friction was decreased as the environmental condition changes from vacuum, to dry air. It was also observed that the coefficient of friction decreased with increasing silicon concentration in the film. Chemical analyses of debris suggested that the low and stable friction coefficient is closely related to the silicon rich oxide debris and the rolling action.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.310-310
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• 2010

태양전지의 양자효율이란 입사되는 광자 수에 대한 태양전지에 의해 수집되는 캐리어 수의 비를 의미한다. 본 연구에서는 결정질, 다결정질, 비정질 실리콘 태양전지 양자효율 측정 정확도 향상에 대하여 연구하였다. 태양전지 양자효율 측정에 어떠한 변수들이 영향을 미치고 정확한 측정을 하기위해서는 측정을 어떻게 하여야 하는가에 대한 실험을 하였다. 태양전지 특성분석은 실제 사용 환경에 맞도록 표준측정조건(standard test condition: STC)에서 측정한 데이터를 사용하여야 한다. 이 표준측정조건은 AM1.5G 스펙트럼, $100\;mW/cm^2$의 강도 및 온도 $25^{\circ}C$에서의 측정을 말한다. 조건에 맞지 않는 측정을 할 경우 어떠한 변화가 있는지와 어떻게 측정을 하는 것이 정확한 측정인가에 대한 연구를 진행하였다. 바이어스 광의 강도와 쵸핑 주파수에 따라 측정을 진행하였고, 태양전지의 분광반응도(spectral response: SR)를 측정하여 이를 이용하여 양자효율을 계산하였고, 양자효율 결과를 토대로 분석을 진행하였다.

• Journal of Korean Society on Water Environment
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• v.29 no.5
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• pp.666-673
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• 2013

Chloroform is harmful volatile organics and representatives of Trihalomethane (THM). Well-known removal methods of Chloroform are photo oxidation or OH radical oxidation. Plasma on water surface at slightly vacuum condition (45 torr) can produce OH radical and it will help chloroform removal. 81.5% of chloroform is removed by vacuum and plasma in 10 min.. Plasma can totally oxidize it till 2.8% and partially oxidize chloroform up to 18.5%. Water-surface plasma is good method to remove chloroform in short time.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.149-149
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• 2011

CdS films were deposited on glass substrates by R.F. magnetron sputtering method and the films were annealed at various substrate temperatures ranging from room temperature to $300^{\circ}C$. Structural properties of the films were studied by X-ray diffraction analysis. The structural parameters as crystallite size have been evaluated. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by increasing substrate temperatures. X-ray diffraction patterns of these films indicated that they contain both cubic (zincblende) and hexagonal (wurtzite) structures as a mixture. Optical properties of the films were measured at room temperature by using UV/VIS spectrometer in the wavelength range of 190 to 1100nm and optical absorption coefficients were calculated using these data. The energy gap of the films was found to decrease, and the band edge sharpness of the optical absorption was seen to oscillate by annealing. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.132-132
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• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.181-182
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• 2011

Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Plant Resources
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• v.5 no.1
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• pp.70-73
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• 2002

To develop an optimal storage method of root of Angelica acutiloba Radix, which has been grown as major herbal medicine material to be cultivated, root of Angelica acutiloba Radix, was stored for 10 months with different packing materials and sealing methods. The loss in dry weight as influenced by packing materials and sealing methods was the lowest at vacuum packing and followed by complete sealing methods with transparent polyethylene film. The ratio of root rot during the storage period was not significantly different between packing materials but was significantly different between sealing conditions. In conclusion, vacuum packing and complete sealing with polyethylene film appears to be most optimal for storage of Angelica acutiloba Radix.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.521-521
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• 2013

Collective Thomson scattering (CTS) system is being developed in KAERI based on high power gyrotrons. CTS is a promising diagnostic method to measure fast ion distributions and potentially the fusion product alpha particles in magnetically confined plasmas. By utilizing millimeter-waves from high power gyrotrons as a probing beam, spatially and temporally resolved 1-D ion velocity distributions can be obtained from the scattered radiation with less scattering geometrical constraints. The pulse modulation of gyrotrons enables to separate scattering signal from ECE background noises. The feasibility was assessed with the calculation of spectral density functions under the condition of KSTAR plasmas. Further CTS system requirements are also discussed.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1307-1308
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• 2006

The purpose of this study was to examine the interfacial reaction between diamond grits and Ni-based, Ag-based, brazing filler metal, respectively. The morphology of the interface between diamond grits and Ni-based, filler metal exhibited a very good condition after this heat treatment. Cr-carbide and Ni-rich compounds were detected by XRD analysis in the vicinity of the interface between diamond grits and Ni-based, filler metal after vacuum induction brazing. Chromium carbide is considered to play an important role in the high bonding strength achieved between diamonds grits and the brazing alloy.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.1-6
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• 2002

A low temperature process technology of copper thin films has been developed by a chemical vapor deposition technology for multi-level metallzations in ULSI fabrication. The copper films were deposited on TiN/Si substrates in helium atmosphere with the substrate temperature between $130^{\circ}C$ and $250^{\circ}C$. In order to get more reliable metallizations, effects on the post-annealing treatment to the electrical properties of the copper films have been investigated. The Cu films were annealed at the $5 \times10^{-6}$ Torr vacuum condition and the electrical resistivity and the nano-structures were measured for the Cu films. The electrical resistivity of Cu films shown to be reduced by the post-annealing. The electrical resistivity of 2.0 $\mu \Omega \cdot \textrm{cm}$ was obtained for the sample deposited at the substrate temperature of $180^{\circ}C$ after vacuum annealed at $300^{\circ}C$. The resistivity variations of the films was not exactly matched with the size of the nano-structures of the copper grains, but more depended on the contamination of the copper films.