• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.271-272
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• 2012

Bulk Metallic Glasses (BMGs or amorphous alloy) exhibit high strength and good corrosion resistance. Applications of thin films and micro parts of BMGs have been used a lot since its inception in the research of BMGs. However, Application and fabrication of BMGs are limited to make structural materials. Thin films of BMGs which is sputtered on the surface of structural materials by sputtering process is used to improve limits about application of BMGs. In order to investigate the difference of properties between designed alloys and thin films, we identified that thin films deposited on the surface that have the characteristic of the amorphous films and the composition of designed alloys. Zr-Cu (Cu=30, 35, 38, 40, 50 at.%) and Zr-Cu-Al (Al=10 at.% fixed, Cu=26, 30, 34, 38 at.%) alloys were fabricated with Zr (99.7% purity), Cu (99.997% purity), and Al (99.99% purity) as melting 5 times by arc melting method before rods 2mm in diameter was manufactured. In order to analyze GFA (Glass Forming Ability), rods were observed by Optical Microscopy and SEM and $T_g$, $T_x$, ($T_x$ is crystallization temperature and $T_g$ is the glass transition temperature) and Tm were measured by DTA and DSC. Powder was manufactured by Gas Atomizer and target was sintered using powder in large supercooled liquid region ($=T_x-T_g$) by SPS(Spark Plasma Sintering). Amorphous foil was prepared by RSP process with 5 gram alloy button. The composition of the foil and sputtered thin film was analyzed by EDS and EPMA. In the result of DSC curve, binary alloys ($Zr_{62}Cu_{38}$, $Zr_{60}Cu_{40}$, $Zr_{50}Cu_{50}$) and ternary alloys ($Zr_{64}Al_{10}Cu_{26}$, $Zr_{56}Al_{10}Cu_{34}$, $Zr_{52}Al_{10}Cu_{38}$) have $T_g$ except for $Zr_{70}Cu_{30}$ and $Zr_{60}Al_{10}Cu_{30}$. The compositions with $T_g$ made into powders. Figure shows XRD data of thin film showed similar hollow peak.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.14-17
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• 2014

In this paper, indium reduced materials for transparent conductive electrodes (TCE) were fabricated and their physical properties were evaluated. Two of materials, indium-zinc-tin oxide (IZTO) and aluminum (Al) were selected as TCE materials. In case of IZTO nanoparticles, composition ratios of In, Zn and Sn is 8:1:1 were synthesized. Size of the synthesized IZTO nanoparticles were less than 10 nm, and specific surface areas were about $90m^2/g$ indicating particle sizes are very fine. Also, the IZTO nanoparticles were well crystallized with (222) preferred orientation despite it was synthesized at the lowered temperature of $300^{\circ}C$. Composition ratios of In, Zn and Sn were very uniform in accordance with those as designed. Meanwhile, Al was deposited onto glass by sputtering in a vacuum chamber for mesh architecture. The Al was well deposited onto the glass, and no pore was observed from the Al surface. The sheet resistance of Al on glass was about $0.3{\Omega}/{\square}$ with small deviation of $0.025{\Omega}/{\square}$, and adhesion was good on the glass substrate since no pelt-off part of Al was observed by tape test. If the Al mesh is combined with ink coated layer which is consistent of IZTO nanoparticles, it is expected that the good and reliable metal mesh architecture for TCE will be formed.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.2
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• pp.70-77
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• 2010

This study proposed an auto focusing method for a multi-focus image in assembling lens modules in digital camera phones. A camera module in a camera phone is composed of a lens barrel, an IR glass, a lens mount, a PCB board and aspheric lenses. Alignment among the components is one of the important factors in product quality. Auto-focus is essential to adjust image quality of an IR glass in a lens holder, but there are two focal points in the captured image due to thickness of IR glass. So, sharpness, probability and a scale factor are defined to find desired focus from a multi-focus image. The sharpness is defined as clarity of an image. Probability and a scale factors are calculated using pattern matching with a registered image. The presented algorithm was applied to a lens assembly machine which has 5 axes, two vacuum chucks and an inspection system. The desired focus can be determined on the local maximum of the sharpness, the probability and the scale factor in the experiment.

• Advances in nano research
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• v.13 no.1
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• pp.97-111
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• 2022

In the present article, silica nanoparticles (SNPs) were exploited to improve the tribological and mechanical properties of vinyl ester/glass fiber composites. To the best of our knowledge, there hasn't been any prior study on the wear properties of glass fiber reinforced vinyl ester SiO₂ nanocomposites. The wear resistance is a critical concern in many industries which needs to be managed effectively to reduce high costs. To examine the influence of SNPs on the mechanical properties, seven different weight percentages of vinyl ester/nano-silica composites were initially fabricated. Afterward, based on the tensile testing results of the silica nanocomposites, four wt% of SNPs were selected to fabricate a ternary composite composed of vinyl ester/glass fiber/nano-silica using vacuum-assisted resin transfer molding. At the next stage, the tensile, three-point flexural, Charpy impact, and pin-on-disk wear tests were performed on the ternary composites. The fractured surfaces were analyzed by scanning electron microscopy (SEM) images after conducting previous tests. The most important and interesting result of this study was the development of a nanocomposite that exhibited a 52.2% decrease in the mean coefficient of friction (COF) by augmenting the SNPs, which is beneficial for the fabrication/repair of composite/steel energy pipelines as well as hydraulic and pneumatic pipe systems conveying abrasive materials. Moreover, the weight loss due to wearing the ternary composite containing one wt% of SNPs was significantly reduced by 70%. Such enhanced property of the fabricated nanocomposite may also be an important design factor for marine structures, bridges, and transportation of wind turbine blades.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.197.2-197.2
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• 2015

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, the ZnTe:O/CdS/ZnO structure was fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 4.5 J/cm2. The base pressure of the chamber was kept at a pressure of approximately $4{\times}10-7Torr$. ZnO thin film with thickness of 100 nm was grown on to ITO/glass, and then CdS and ZnTe:O thin film were grown on ZnO thin film. Thickness of CdS and ZnTe:O were 50 nm and 500 nm, respectively. During deposition of ZnTe:O films, O2 gas was introduced from 1 to 20 mTorr. For fabricating ZnTe:O/CdS/ZnO solar cells, Au metal was deposited on the ITO film and ZnTe:O by thermal evaporation method. From the fabricated ZnTe:O/CdS/ZnO solar cell, current-voltage characteristics was measured by using HP 4156-a semiconductor parameter analyzer. Finally, solar cell performance was measured using an Air Mass 1.5 Global (AM 1.5 G) solar simulator with an irradiation intensity of 100 mW cm-2.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.208.1-208.1
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• 2015

최근, 차세대 투명 디스플레이 구동소자로서 산화물 반도체를 이용한 Transparent Amorphous Oxide Semiconductor (TAOS) 기술이 큰 주목을 받고 있다. 산화물 반도체는 기존의 a-Si에 비해 우수한 전기적인 특성과 낮은 구동전압 그리고 넓은 밴드 갭으로 인한 투명성의 장점들이 있다. 그리고 낮은 공정 온도에서도 제작이 가능하기 때문에 유리나 플라스틱과 같은 다양한 기판에서도 박막 증착이 가능하다. 하지만 기존의 furnace를 이용한 열처리 방식은 낮은 온도에서 우수한 전기적인 특성을 내기 어려우며, 공정 시간이 길어지는 단점들이 있다. 따라서 본 연구에서는 산화물 반도체중 In-Ga-Zn-O (IGZO)와 In-Sn-O(ITO)를 각각 채널 층과 게이트 전극으로 이용하였다. 또한 마이크로웨이브 열처리 기술을 이용하여 기존의 열처리 방식에 비해 에너지 전달 효율이 높고 짧은 시간동안 저온 공정이 가능하며 우수한 전기적인 특성을 가지는 투명 박막 트랜지스터를 구현 하였다. 본 실험은 glass 기판위에서 진행되었으며, RF sputter를 이용하여 ITO를 150 nm 증착한 후, photo-lithography 공정을 통하여 하부 게이트 전극을 형성하였다. 이후에 RF sputter를 이용하여 SiO2 와 IGZO 를 각각 300, 50 nm 증착하였고, patterning 과정을 통하여 채널 영역을 형성하였다. 또한 소자의 전기적인 특성 향상을 위해 마이크로웨이브 열처리를 1000 Watt로 2 분간 진행 하였고, 비교를 위하여 기존 방식인 furnace 를 이용하여 N2 분위기에서 $400^{\circ}C$로 30분간 진행한 소자도 병행하였다. 그 결과 마이크로웨이브를 통해 열처리한 소자는 공정 온도가 $100^{\circ}C$ 이하로 낮기 때문에 glass 기판에 영향을 주지 않고 기존 furnace 열처리 한 소자보다 전체적으로 전기적인 특성이 우수한 것을 확인 하였다.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.213-218
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• 2001

ZnO and ZnO:In films were deposited on the glass substrates by a spray pyrolysis method. It is found that ZnO films were polycrystalline with the preferred orientation (002) and have a hexagonal structure with lattice constants of a=3.242 $\AA$ and c=5.237 $\AA$. The crystalline structure of ZnO:In films deposited at the In content of 0~6.03 at. % were the same as that of ZnO films, but its lattice constants was slightly larger than those of ZnO films. The relative atomic ratios of metal ion of ZnO:In films were in accordance with those of the spray solution within the experimental error. The minimum resistivity of and the maximum carrier concentration of 19.1 $\Omega\cdot\textrm{cm}$ and the maximum carrier concentration of $2.11\times10^{19}\textrm{cm}^{-3]$ obtained from the ZnO:In films when In content was 2.76 at. %. The optical transmission of the sample grown at the In content of 3.93 at. % was about 95% in the wavelength between 400 and 800 nm.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.326-336
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• 1997

From the concept that the ion implantation-induced defect is one of the major factors in determining source/drain junction characteristics, high quality ultra-shallow $p^+$-n junctions were formed through the control of ion implantation-induced defects in silicon substrate. In conventional process of the junction formation. $p^+$ source/drain junctions have been formed by $^{49}BF_2^+$ ion implantation followed by the deposition of TEOS(Tetra-Ethyl-Ortho-Silicate) and BPSG(Boro-Phospho-Silicate-Glass) films and subsequent furnace annealing for BPSG reflow. Instead of the conventional process, we proposed a series of new processes for shallow junction formation, which includes the additional low temperature RTA prior to furnace annealing, $^{49}BF_2^+/^{11}B^+$ mixed ion implantation, and the screen oxide removal after ion implantation and subsequent deposition of MTO (Medium Temperature CVD oxide) as an interlayer dielectric. These processes were suggested to enhance the removal of ion implantation-induced defects, resulting in forming high quality shallow junctions.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.335-335
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• 2013

최근 다기능 소재의 개발이 필요함에 따라 서로 상반되는 2가지 이상의 물성을 동시에 구현할 수 있는 소재의 개발이 요구되고 있다. 4 성분계 물질을 단일 타겟으로 제조함으로써 다수의 타겟을 이용하는 기존 PVD 방법의 복잡성과 재형성 등의 문제점을 해결하고 다기능성을 구현할 수 있는 코팅막을 제조할 수 있게 된다. 본 연구에서는 제조된 4 성분계 모물질을 UBM 최근 다기능 소재의 개발이 필요함에 따라 서로 상반되는 2가지 이상의 물성을 동시에 구현할 수 있는 소재의 개발이 요구되고 있다. 4 성분계 물질을 단일 타겟으로 제조함으로써 다수의 타겟을 이용하는 기존 PVD 방법의 복잡성과 재형성 등의 문제점을 해결하고 다기능성을 구현 할 수 있는 코팅막을 제조할 수 있게 된다. 본 연구에서는 제조된 4 성분계 모물질을 UBM 스퍼터링법을 이용하여 질화 공정을 도출하였고 질소 함량에 따른 물리적 특성 및 박막의 특성에 대해 연구하였다. BMG (Bulk Metallic Glass) 타겟을 이용하여 마그네트론 스퍼터링법으로 박막을 코팅하였다. 시편은 Si wafer, SUS 그리고 부식 특성 평가를 실시하기 위하여 냉연강판을 사용하였다. 시편은 아세톤, 알코올로 각각 10분간 초음파 세척한 후 진공장비에 장착하여 Ar 분위기에서 글로우 방전으로 청정을 30분간 실시하였다. 시편청정이 끝나면 ~$10^{-6}$ Torr까지 진공 배기를 실시하고 Ar 가스를 주입하여 2.5 mTorr로 진공도를 유지하여 스퍼터링으로 박막 코팅을 실시하였다. 스퍼터링 파워는 약 0.6 kW (2.0 A)으로 고정하였고 질소 유량은 0~10 SCCM으로 변화시켜 BMG 박막을 코팅하였다. 질소가 첨가된 BMG 박막에서는 시편의 색상이 노란빛으로 나타났으며 이것은 타겟의 조성 중 가장 많이 함유되어있는 Zr이 질화되어 색상의 변화가 일어난 것으로 판단된다. BMG 코팅을 위해서 진공용기로 주입한 질소의 유량이 소량인 경우에도 BMG 코팅층에 비교적 많은 양의 질소가 존재하였고 일정량 이상에서는 BMG 코팅층에 존재하는 질소의 양이 포화되는 현상을 보였다. 질소 유량 3, 4 SCCM의 BMG 코팅층에서 ZrN (111), ZrN (200) Peak이 관찰되었다. BMG 코팅층의 경도 측정결과 Bias 50 V 인가 시 ~22 Gpa로 경도가 가장 높았다. BMG 코팅층의 내부식 특성을 평가하기 위해 염수분무 시험을 실시하였고 ~$10{\mu}m$의 두께를 갖는 BMG 코팅층에서 염수분무 시작 후 48시간 만에 적청이 발생하였다.