• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.399-399
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• 2011

We studied the structural and optical characterization of zinc sulfide (ZnS) thin films by RF magnetron sputtering on glass substrates. The substrate temperature was varied in the range of 100$^{\circ}C$ to 400$^{\circ}C$. The XRD analyses indicated that ZnS films had cubic structures with (111) preferential orientation and grain size varied from 20 to 60 nm, increasing with substrate temperatures. The optical properties were carried out by UV-visible spectrophotometer. Transmission measurement showed that the films had more than 70% transmittance in the wavelength larger than 400 nm, and the absorption edge shifted to shorter wavelength with the increase of substrate temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.387-387
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• 2011

ITO (Indium-Tin Oxide)는 전기전도도, 가시광선투과도가 높으며, 패터닝하기 쉬운 장점을 가지나 Indium의 자원 고갈에 의한 재료비 상승의 문제점을 가지고 있어, 이를 대체하기 위한 연구가 진행되고 있다. 본 연구에서는 ITO 대신 AZO (ZnO:Al)를 기판온도에 따라 마그네트론 DC 스퍼터를 이용하여 소다라임 글래스에 증착하여 투명전극의 전기, 광학적 특성을 분석하였다. 조건에 따라 증착된 AZO 투명전극위에 유기 태양전지 흡수층으로 Poly (3-hexylthiophene) (P3HT)와 (phenyl-C61-butyric acid methyl ester (PCBM)를 사용하였으며, Glass/AZO/P3HT:PCBM/PEDOT:PSS/Ag의 구조를 갖는 Inverted 유기 태양전지를 제작하여 ITO 투명전극에 제작된 유기태양전지와의 특성을 비교, 분석 하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.668-672
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• 2005

Doosan DND, OLED manufacturing equipment maker, has developed the largest deposition system to produce $730{\times}920mm$ size AMOLED devices for the first time in the world. It is necessary for producing 40" AMOLED panels to develop the large-scaled vacuum technologies including ICP plasma, stretching glass chuck, organic deposition, metal deposition and hybrid encapsulation processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.522-522
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• 2013

Plasma can be used to various applications such as sterilization, inactivation/removal of microorganisms, wound healing, tooth bleaching, cancer treatment, surface modification and plasma polymerization. In this research, we studied the effect of plasma irradiation on the structural, optical, and biological properties of the polymer films. Several polymers were synthesized and then deposited on the glass substrates. The polymer films were treated by oxygen and nitrogen plasmas. Plasma-treated films were investigated by contact angle, infrared absorption spectroscopy, cathodoluminescence spectroscopy, and scanning electron microscopy. Functional materials were prepared on plasma-treated surface, and their performances were investigated using various techniques. Next, we discuss relationship between the performance of functional materials and the structural properties of plasma-treated polymer films.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.182-186
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• 2005

In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.284-284
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• 2007

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.116-119
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• 2003

$Ni_2$MnGa films, deposited on mica and glass substrates, were studied by ferromagnetic resonance (FMR) technology. The temperature-dependent resonance field was measured and a martensitic phase transformation (MT) was found between 310 and 340 K, exhibiting an abnormality on the curve. The easy axis is found to be in the film plane. The line width increases as a whole with decreasing temperature, which is discussed in terms of the motional narrowing mechanism. The resonance field was also measured as a function of orientation and the results were fitted, exhibiting a good consistence.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.39-44
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• 2003

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.38-38
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• 2000

저온유지장치에서 요구되는 도달압력은 초전도 코일의 냉각시스템과 저온유지장치의 벽 사이의 진공단열조건으로부터 결정될 수 있으며, 기체에 의한 열전도의 영향을 방지하기 위해서는 5$\times$105Torr 이하의 진공도가 요구된다. 저온유지장치 내에서 진공 단열재로 사용되는 Glass Fiber Reinforced Plastic(GFRP)과 Carbon Fiber Reinforced Plastic(CFRP)의 기체 방출률을 측정하였다. 고출력 토카막 방전동안 graphite limiter 표면의 온도는 200$0^{\circ}C$ 이상이며, 플라즈마로 유입되는 불순물의 양을 줄이기 위해 많은 시도를 하고 있다. 상온에서부터 약 100$0^{\circ}C$까지 승온에 따른 방출기체의 양 및 성분 분석, annealing 후 공기 중에 약 2주간 노출 후 기체 방출률과 성분을 분석하였다. 총 기체 방출량은 10$0^{\circ}C$ 근방에서 급격히 증가하여 $600^{\circ}C$부터는 graphite의 종류에 관계없이 거의 일정한 분포를 보이며, 최대 방출률은 약 20$0^{\circ}C$~30$0^{\circ}C$ 부근에서 나타났다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.58-58
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• 2000

Recently low resistance of bus line is required for large screen size RFT-CLD panels. As a result, lower resistance Al-alloy is currently reviewed extensively. The resistivity is required smaller than 10$\mu$$\Omega$cm and high resistance of chemical attack is required. In this paper, Al-W thin film were deposited on glass substrates by D.C magnetron sputtering system under various condition for high chemical resistance. Its properties were characterized by SEM, AFM, XRD, 4-point-probe, and cyclic voltammertry. The optimal condition of Al-W was 10$0^{\circ}C$, 100W, 0.4Pa, 23sccm(Ar) and 35$0^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-W(3 wt.%) was about 11$\mu$$\Omega$cm. And when wt.% of W in Al-W alloy was higher than about 4%, Al-W alloy thin film has high chemical resistance.