• 제목/요약/키워드: Vacuum Chamber

검색결과 648건 처리시간 0.026초

용액에서의 아미노산 및 단백질 자유기에 관한 ESR 연구 제3보 $Ti-H_2O_2$ Flow System으로 만든 Lysozyme 자유기의 ESR 연구 (An ESR Study of Amino Acid and Protein Free Radicals in Solution Part Ⅲ. ESR Study of Lysozyme Free Radical Produced by $Ti-H_2O_2$ Flow System)

  • 홍순주
    • 대한화학회지
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    • 제15권4호
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    • pp.177-181
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    • 1971
  • Free radicals of lysozyme produced by $Ti-H_2O_2$ system were studied in aqueous solution at room temperature using ESR with a continuous flow-mixing. The spectra, each consisting of a doublet with 5.5 G splitting and a broad resonance covering 80 G splitting are closely similar in shape to that for solid irradiated in vacuum at $77^{\circ}K$ and observed at room temperature immediately on warming. The result is assumed to indicate that the secondary protein radical components formed within 0.01 second, dead time of the mixing chamber, and initiated by hydrogen atom abstraction at ${\alpha}$-carbon atom of peptide chain in liquid solution at room temperature are identical to those resulting from the initial formation of a mixture of positive holes and negative ions by ionization processes as well as radical fragments by the rupture of chemical bonds in the solid during similar time at the same temperature. A broad resonance is observed with considerable amplitude on the high field side of the doublet, which is quite dissimilar to the spectra of irradiated solid lysozyme. This resonance was tentatively attributed to the polypeptide free radical in which unpaired electrons are localized on side chain.

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Soft X-ray Nano-spectroscopy for Electronic Structures of Transition Metal Oxide Nano-structures

  • Oshima, Masaharu
    • Applied Science and Convergence Technology
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    • 제23권6호
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    • pp.317-327
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    • 2014
  • In order to develop nano-devices with much lower power consumption for beyond-CMOS applications, the fundamental understanding and precise control of the electronic properties of ultrathin transition metal oxide (TMO) films are strongly required. The metal-insulator transition (MIT) is not only an important issue in solid state physics, but also a useful phenomenon for device applications like switching or memory devices. For potential use in such application, the electronic structures of MIT, observed for TMO nano-structures, have been investigated using a synchrotron radiation angle-resolved photoelectron spectroscopy system combined with a laser molecular beam epitaxy chamber and a scanning photoelectron microscopy system with 70 nm spatial resolution. In this review article, electronic structures revealed by soft X-ray nano-spectroscopy are presented for i) polarity-dependent MIT and thickness-dependent MIT of TMO ultrathin films of $LaAlO_3/SrTiO_3$ and $SrVO_3/SrTiO_3$, respectively, and ii) electric field-induced MIT of TMO nano-structures showing resistance switching behaviors due to interfacial redox reactions and/or filamentary path formation. These electronic structures have been successfully correlated with the electrical properties of nano-structured films and nano-devices.

40keV 저에너지 전자빔을 이용한 단결정 Si 태양전지의 변환 효율에 관한 연구 (Study about Conversion Efficiency of c-Si Solar Cells Using Low energy(40keV) Electron Beam)

  • 윤정필;강병복;박세준;윤필현;차인수
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2003년도 춘계전력전자학술대회 논문집(2)
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    • pp.942-948
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    • 2003
  • This paper about the small electron beam irradiator for solar cell's efficiency. Many things are studied by method to increase conversion efficiency of solar cell. We selected electron beam by method for conversion efficiency of solar cell. Energy bands of this electron beam irradiator is 80keV(max.). And, solar cells that apply in this paper are crystal Si. Average efficiency of solar cell that applies in this experiment is 10$\%$. This system manufactured low energy electron beam irradiator. And, electron beam irradiation to solar cell in vacuum chamber of this irradiator. Irradiation area is 20*20 [mm2] by 40[keV].

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동시 스퍼터 법에 의한 Bi 박막의 초전도 특성 (Superconducting Characteristics of Bi Thin Film by Co-Deposition)

  • 이희갑;박용필;이준응
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.278-280
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    • 2001
  • BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

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보조 전류원 커패시터 뱅크를 가지는 LC공진회로를 이용한 아크발생 실험장치에 관한 연구 (Arc Generation Facility with Auxiliary Current Source Using LC Resonance Circuit)

  • 강종성;박홍태;이방욱;서정민
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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    • pp.1054-1056
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    • 1999
  • It is necessary to install the arc generation facility to obtain the important technology for the design of breakers and switches, and the improvement of their performance and reliability. With this facility it is possible to study the characteristics of Arc in air/gas/vacuum insulation environment. The arc generation facility briefly consists of capacitor bank which can charge enormous energy, an air-core reactor, and several measurement equipments. This facility can simulates the arc phenomena in breakers and switches by means of generating high currents. In order to the protect electrode damage during the arcing time in arc extinguishing chamber, we installed auxiliary current source in addition to main capacitor bank, This auxiliary current source produces relatively small arc between electrodes before high current generation by main capacitor bank. Therefore it is possible to observe and measure the arcing phenomenon without damage of electrodes.

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전자빔 용접된 Cu / STS 304강의 미세조직에 관한 연구 (Microstructure of Electron Beam Welded Cu / STS 304 Dissimilar Materials)

  • 박경태;김인호;백준호;천병선
    • Journal of Welding and Joining
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    • 제28권2호
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    • pp.47-53
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    • 2010
  • According to the research report for the recent a few years, the dissimilar welding of Cu and STS 304 alloy have been presented that a weldability is very poor. This article present a study on Lap joint by Electron beam welding dissimilar materials. The weld metals was constituted between pure copper and STS 304 steel. The experiment was performed with 125mA welding current, 520mA focusing current. The Vacuum condition of chamber is 5${\times}$10-5torr and welding speed is 300mm/min. Showing the bead shape of weld metal, the thickness of the stainless 304 using as the protect materials is 3mm and the thickness of a copper is 15mm. The analysis about the microstructure were carried out in which it was observed with SEM. The results showed that complex heterogeneous fusion zone microstructure characterized both by rapid cooling and mixing of the molten metal, however the liquation crack was formated in the fusion line.

Flow Visualization of Flowfield Structures around an Aerospike Nozzle using LIF and PSP

  • NIIMI Tomohide;MORI Hideo;TANIGUCHI Mashio
    • 한국가시화정보학회:학술대회논문집
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    • 한국가시화정보학회 2004년도 Proceedings of 2004 Korea-Japan Joint Seminar on Particle Image Velocimetry
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    • pp.75-80
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    • 2004
  • Aerospike nozzles have been expected to be used for an engine of a reusable space shuttle to respond to growing demand for rocket-launching and its cost reduction. In this study, the flow field structures in any cross sections around clustered linear aerospike nozzles are visualized and analyzed, using laser induced fluorescence (LIF) of nitrogen monoxide seeded in the carrier gas of nitrogen. Since flow field structures are affected mainly by pressure ratio, the clustered linear aerospike nozzle is set inside a vacuum chamber to carry out the experiments in the wide range of pressure ratios from 75 to 200. Flow fields are visualized in several cross-sections, demonstrating the complicated three-dimensional flow field structures. Pressure sensitive paint (PSP) of PtTFPP bound by poly- IBM -co-TFEM is also applied to measurement of the complicated pressure distribution on the spike surface, and to verification of contribution of a truncation plane to the thrust. Finally, to examine the effect of the sidewalls attached to the aerospike nozzle, the flow fields around the nozzle with the sidewalls are compared with those without sidewalls.

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새로운 건성 및 습성 침착 채취기의 개발 (Development of the Novel Dry and Wet Deposition Collector)

  • 이병규;이채복
    • 한국대기환경학회지
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    • 제16권6호
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    • pp.675-684
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    • 2000
  • A novel dry and wet deposition collector, which can overcome the several problems such as water evaporation cartridge cracks and high costs founded in the previous collector systems, has been constructed. ENVI-18 SPE adsorption cartridge has been used to measure atmospheric deposition of polycylic aromatic hydrocarbons (PAHs). A surrogate surface, consisted of water and methanol, was filled in the dry deposition funnel to simulate dry deposition onto water surface. A water supply system in order to compensat evaporation of the surrogate surface was used and it was consisted of a piston pump, a tubing pump, a overflow tube and a chamber system. A novel water vaporizing system to supply water onto the wet SPE cartridge system with a constant flow rate was developed. The novel water vaporizing system, consisted of a vacuum pump, a water supply reserviour and tube and a mini space heater, could prevent the PAHs adsorption cartridge cracks occurred in the previous collector and effectively adsorb PAHs. The novel dry and wet deposition collector showed a good adsorption, desorption, and recovery rates of PAHs. By reducing the number of pumps used and employing polypyopylene (PP) instead of teflon as a material of collection funnel, the total construction costs were much reduced as compared with the previous dry and wet deposition collectors.

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A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

  • Nakatani, Keigo;Ishizaki, Toshio
    • Journal of electromagnetic engineering and science
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    • 제15권2호
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    • pp.82-88
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    • 2015
  • The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated.

$BaMgF_4$/Si 구조를 이용한 비휘발성 메모리용 MFSFET의 제작 및 특성 (Fabrication and Properties of MFSFET′s Using $BaMgF_4$/Si Structures for Non-volatile Memory)

  • 이상우;김광호
    • E2M - 전기 전자와 첨단 소재
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    • 제10권10호
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    • pp.1029-1033
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    • 1997
  • A prototype MFSFET using ferroelectric fluoride BaMgF$_4$as a gate insulator has been successfully fabricated with the help of 2 sheets of metal mask. The fluoride film was deposited in an ultrai-high vacuum system at a substrate temperature of below 30$0^{\circ}C$ and an in-situ post-deposition annealing was conducted for 20 seconds at $650^{\circ}C$ in the same chamber. The interface state density of the BaMgF$_4$/Si(100) interface calculated by a MFS capacitor fabricated on the same wafer was about 8$\times$10$^{10}$ /cm$^2$.eV. The I$_{D}$-V$_{G}$ characteristics of the MFSFET show a hysteresis loop due to the ferroelectric nature of the BaMgF$_4$film. It is also demonstrated that the I$_{D}$ can be controlled by the “write” plus which was applied before the measurements even at the same “read”gate voltage.ltage.

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