• Journal of Korea Society of Industrial Information Systems
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• v.6 no.4
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• pp.48-53
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• 2001

A three-stage low noise amplifier(LNA) for the Base-station of the IMT-2000 is designed and implemented. In the first stage, a GaAs HJt-FET which has good noise characteristics is made use of. Monolithic microwave integrated circuits(MMICS) are used in the second and the third stage to achieve both the high gain and high output power. Although the balanced amplifier is used to reduce the input VSWR, it is done only in the first stage because we have to minimize the noise figure attributed to the phase difference of the balanced amplifier. It is shown that the implemented LNA has the gai over 39.74dB, the gain flatness less than ±0.4dB, the noise figure below 0.97dB, input and output VSWRs less than 1.2, and OIP₃(output third order intercept point) of 38.17dBm in the operating frequency range.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.3
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• pp.771-783
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• 1996

A desing technique of 8 ports variable wave impedance generator (8P-VWIG) is described. The design technique employs not only a numerical algorithm to find the structure with arbitrary characteristic impedance, but also a numerical solution to analyze the uniform elementrognentic fields established inside the generator. The 8P-VWIG so obtained is shown to have good performance with the VSWR of less than 1.4 at any frequency of interest below which higher order mode begin to propagate. The measured first resonant frequency is 152.1 MHz. The 8P-VWIG is designed based on the concept of an expanded multi-transmission line(8 channel). It is especially useful for the electronmagnetic interference(EMI) and electronmagnetic susceptibility(EMS) testing since it maximizes usable test crosssectional area, and its is easy change the polarization, vertical or horizontal, of field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.77-81
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• 2006

We report the performance of a four-element, 11.67 GHz, high-Tc superconducting (HTS) microstrip antenna array with corporate feed network and circular polarization for direct broadcasting satellite (DBS) system. Our array antennas were designed and built on a 0.5 mm thick MgO substrate. To compare the superconducting antennas with normal conducting counterpart, One antenna pattern was fabricated from gold thin film, and a second pattern was fabricated from $YBa_2Cu_3O_{7-x}$ (YBCO) superconducting thin film. To improve the axial ratio of circularly polarized arrays, sequential rotation technique were used. Efficiency, radiation pattern, return loss and bandwidth were measured for both antennas at room temperature and at cryogenic temperature. The array produced good circular polarization, and the gain of the array at 77 K, relative to a copper array at room temperature was approximately 1.54 dB. The measured return loss of our HTS antenna array was 35.79 dB at the resonant frequency of 11.67 GHz and The total effective bandwidth was about 3.4 %. The results showed that high-temperature superconductors, when used in microstrip arrays, improved the efficiency of the HTS antenna array for circularly polarization.

• ETRI Journal
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• v.41 no.6
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• pp.715-730
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• 2019

We propose a switched beam-forming antenna that satisfies not only ultra-wideband characteristics but also beam-forming in the WLAN frequency band using an ultra-wideband antenna and passive parasitic elements applying a broadband optimal reactance load algorithm. We design a power and phase estimation function and an error correction function by re-analyzing and normalizing all the components of the parasitic array using control system engineering. The proposed antenna is compared with an antenna with a pin diode and reactance load value, respectively. The pin diode is located between the passive parasitic elements and ground plane. An antenna beam can be formed in eight directions according to the pin diode ON (reflector)/OFF (director) state. The antenna with a reactance load value achieves a better VSWR and gain than the antenna with a pin diode. We confirm that a beam is formed in eight directions owing to the RF switch operation, and the measured peak gain is 7 dBi at 2.45 GHz and 10 dBi at 5.8 GHz.

• Proceedings of the IEEK Conference
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• summer
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• pp.181-184
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• 2004

In this paper, we propose the dual band(2.4GHz and 5GHz) antenna for access point of WLAN(Wireless Local Area Network) which has similar radiation patterns for each band. Simulation results by using HFSS(High Frequency Structure Simulator) for the proposed antenna are presented. The electrical characteristics of the proposed antenna are measured with HP 8510C network analyzer and included. And radiation patterns are measured with rectangular anechoic far field antenna chamber. Measured results show that $S_{11}$ is less than - 14dB and VSWR(Voltage Standing Wave Ratio) is less than 1.5 for all frequency bands of interest. The measured maximum gain for elevation pattern at 2.40GHz is about 2.46dBi at $theta=-78^{\circ}$ and maximum gain for 5.825GHz is about 2.70dBi at $theta=-80^{\circ}.$ And the implemented antenna has good radiation pattern characteristic, therefore, we expect that the implemented dual band antenna is applicable for access point of WLAN.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.4
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• pp.327-334
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• 2004

In this paper, a triplexer for Advanced Mobile Phone Service(AMPS), United States-Personal Communication Services(US-PCS), and Global Positioning System(CPS) is designed using L and C lumped elements. The triplexer shows the insertion loss of 0.6 ㏈, 1.1 ㏈, and 1.6 ㏈ for AMPS, US-PCS, and GPS bands, respectively. Also, it shows the attenuation characteristic of less than 18 ㏈, and the VSWR of less than 2.0 through the all pass-band.

• Journal of electromagnetic engineering and science
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• v.10 no.4
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• pp.309-315
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• 2010

A dual-band dual-polarized microstrip antenna array for an advanced multi-function radio function concept (AMRFC) radar application operating at S and X-bands is proposed. Two stacked planar arrays with three different thin substrates (RT/Duroid 5880 substrates with $\varepsilon_r$=2.2 and three different thicknesses of 0.253 mm, 0.508 mm and 0.762 mm) are integrated to provide simultaneous operation at S band (3~3.3 GHz) and X band (9~11 GHz). To allow similar scan ranges for both bands, the S-band elements are selected as perforated patches to enable the placement of the X-band elements within them. Square patches are used as the radiating elements for the X-band. Good agreement exists between the simulated and the measured results. The measured impedance bandwidth (VSWR$\leq$2) of the prototype array reaches 9.5 % and 25 % for the S- and X-bands, respectively. The measured isolation between the two orthogonal polarizations for both bands is better than 15 dB. The measured cross-polarization level is ${\leq}-21$ dB for the S-band and ${\leq}-20$ dB for the X-band.

• Journal of electromagnetic engineering and science
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• v.17 no.1
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• pp.44-49
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• 2017

A compact planar microstrip-fed ultra-wideband (UWB) antenna with a dual band-notched for UWB application is presented and analyzed. By inserting a U-shaped slot and inverted U-shaped slot into the pot-shaped radiator, two notched bands are achieved. By optimizing the width and length of the U-shaped slots and inverted U-shaped slot, a desired bandwidth of voltage standing wave ratio (VSWR) less than 2.0 can be achieved, ranging from UWB bands with notched dual bands. The proposed antenna is fabricated on an inexpensive FR-4 substrate with overall dimensions of $28.0mm{\times}39.5mm$. The measured results confirm that the proposed antenna covers from 1.775 to over 13.075 GHz with two rejection bands of around 3.325-3.925 GHz and 5.3125-6.025 GHz. In addition, the proposed antenna showed good radiation characteristics and gains in the UWB bands.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.65-67
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• 2015

In this paper, small WLAN antenna was designed and investigated. Proposed antenna was configured for microstrip patch antenna ($29mm{\times}29mm$) that was mounted on RF4 dielectric substrate (relative permittivity 4.4, thick 1.6mm, tangent loss 0.025) with $45mm{\times}45mm$. In order to obtain a wide band characteristic, the cutting process was 3.2mm diagonal corners of the patch antenna located on the top of the substrate. Antenna feeding position for 50 ohm impedance matching was decided to be 5.1mm at the central axis in the horizontal direction. As a result, frequency bandwidth satisfying the condition of VSWR<2dB was 2.365-2.45GHz (85MHz, 3.53%) for considering WLAN.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.77-78
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• 2016

In this paper, small WLAN antenna was designed and investigated. Proposed antenna was configured for meandered type patch antenna ($20mm{\times}20mm$) that was mounted on RF4 dielectric substrate (relative permittivity 4.4, thick 1.6mm, tangent loss 0.025) size of $20mm{\times}60mm$. Antenna parameters was calculated by using the OpenFDTD simulator. As a result, frequency bandwidth satisfying the condition of VSWR(2:1) was 1.82-3.05GHz (1.23GHz, 44.6%) for considering WLAN.