• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.661-664
• /
• 2004

In this paper, it was demonstrated that the organic thin film transistors with the organic gate insulators were fabricated by vapor deposition polymerization (VDP) processing. The configuration of OTFTs was a staggered-inverted top-contact structure and gate dielectric layer was deposited with 0.45 ${\mu}m$ thickness. In order to form polyimide as a gate insulator, VDP process was also introduced instead of spin-coating process. Polyimide film was respectively co-deposited with different materials. One was from a 4,4'-oxydiphthalic anhydride (ODPA) and 4, 4'-oxydianiline (ODA) and the other was from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and ODA. And it was also cured at 150 $^{\circ}C$ for 1 hour followed by 200 $^{\circ}C$ for 1 hour. Electrical characteristics of the organic thin-film transistors were detailed comparisons between the ODPA-ODA and the 6FDA-ODA which were used as gate insulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.185-190
• /
• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.61-62
• /
• 2006

In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

• Annual Conference of KIPS
• /
• 2011.04a
• /
• pp.1401-1404
• /
• 2011

다양한 사용자의 요구를 충족 시키기 위해서 스마트폰 제조사들은 상이한 해상도의 스마트폰을 출시하고 있지만, 이것은 스마트폰 앱의 호환성 문제를 일으킬 수 있다. 호환성 문제는 서로 다른 해상도를 가진 스마트폰에서 동일한 앱을 실행했을 경우에 그 결과가 다른 현상을 말한다. 스마트폰의 해상도 차이에 따른 앱호환성 문제는 앞으로 더욱 심각해질 것으로 예상된다. 이러한 앱의 호환성을 판별하기 위하여 GUI 기반의 테스트 기법이 고려될 수 있다. 특히 해상도가 다른 두 스마트폰에서 동일한 앱의 실행 결과 화면의 화면 동등성 평가는 매우 어렵다. 본 논문에서는 이 문제를 극복하기 위하여 해상도가 다른 스마트폰의 앱 호환성을 평가하기 위한 화면 동등성을 판별하는 프레임워크를 제안한다. 상이한 해상도의 상용 스마트폰을 대상으로 앱의 실행화면 동등성 평가를 위해 단순 비교 기법과 VDP 기법의 성능 비교를 위한 실험 결과를 소개한다. 실험에서는 상이한 해상도의 스마트폰에서 동일한 앱의 실행 화면을 바탕으로 단순 비교 기법과 VDP 기법의 동등성 판별 성능을 비교한다. 실험 결과 사람의 시각 체계와 유사한 인지 능력을 보이는 VDP 가 화면의 동등성을 비교적 정확하게 판별하였다.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.1
• /
• pp.139-141
• /
• 2007

Thin films of polyimide (Pl) were fabricated by a vapor deposition polymerization method (VDPM) and studied for the photosensitive characteristic. Polyamic acid (PAA) thin films fabricated by vapor deposition polymerization (VDP) from 6FDA and 4-4' DDE were converted to PI thin films by thermal curing. From AFM and Ellipsometer experimental, the films thickness was decreased and the reflectance was increased as the curing temperature was increased. Those results implies that thin film is uniform. From UV-Vis spectra, PI thin films showed high absorbance in 225 $\sim$ 260 [nm] region.

• Electrical & Electronic Materials
• /
• v.9 no.8
• /
• pp.776-782
• /
• 1996

The electrical properties of vapor deposition polymerized polymide thin films for getting an in-line system with manufacturing process of semiconductor device, have been studied. Polyimide thin films fabricated by vapor deposition polymerization(VDP) method based on PMDA and 4,4'-DDE monomer were confirmed by FT-IR spectra. It is found that the major conduction carriers of thin films are ions, and the hopping length of ions is almost same with monomer length at the temperature over 120.deg. C through the analysis of electrical conduction mechanism. Also, The activation energy is about 0.69 eV at the temperature of >$30^{\circ}C$ - >$150^{\circ}C$ and it is shown that the resistivity at which thin films can be used as an insulating film between layers of semiconductor device, is 3.2*10$^{15}$ .ohm.cm.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.816-818
• /
• 1998

In this paper Polyimide(PI) thin film are fabricated by vapor deposition polymerization(VDP) of dry process which are easy to control the film's thickness and hard to pollute due to volatile solvent. The FT-IR spectrum show that PAA thin films fabricated by VDP are changed to PI thin film by thermal curing. From AFM(Atomic Force Microscopy) experimental as the higher curing temperature. the thin film thickness decreases and roughness decresse.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1313-1316
• /
• 2005

In the present paper, it was investigated that adhesion layer on gate insulator could affect the electrical characteristics for the organic thin film transistors (OTFTs). The polyimide (PI) as organic adhesion layer was fabricated by using the vapor deposition polymerization (VDP) processing . It was found that electrical characteristics improved comparing OTFTs using adhesion layer to another. We researched adhesion layer as a function of thickness. For inverted-staggered top contact structure, field effect mobility, threshold voltage, and on-off current ratio of OTFTs using adhesion layer of PI 15 nm thickness on the gate insulator with a thickness of 0.2 ${\mu}m$ were about 0.5 $cm^2/Vs$, -0.8 V, and $10^6$, respectively.

• Journal of the Korean Institute of Intelligent Systems
• /
• v.13 no.6
• /
• pp.729-736
• /
• 2003

In this paper, we propose that the chaotic behavior analysis in the mobile robot of embedding some chaotic such as Chua`s equation, Arnold equation with obstacle. In order to analysis of chaotic behavior in the mobile robot, we apply not only qualitative analysis such as time-series, embedding phase plane, but also quantitative analysis such as Lyapunov exponent In the mobile robot with obstacle. We consider that there are two type of obstacle, one is fixed obstacle and the other is VDP obstacle which have an unstable limit cycle. In the VDP obstacles case, we only assume that all obstacles in the chaos trajectory surface in which robot workspace has an unstable limit cycle with Van der Pol equation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.4
• /
• pp.357-361
• /
• 2006

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.