• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.11
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• pp.1-11
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• 1997

The transient current components of the dRAM are analyzed and the sensing current, data path operation current and DC leakage current are revealed to be the major curretn components. It is expected that the supply voltage of less than 1.5V with low VT MOS witll be used in multi-giga bit dRAM. A low voltage dual VT self-timed CMOS logic in which the subthreshold leakage current path is blocked by a large high-VT MOS is proposed. An active signal at each node of the nature speeds up the signal propagation and enables the synchronous DRAM to adopt a fast pipelining scheme. The sensing current can be reduced by adopting 8 bit prefetch scheme with 1.2V VDD. Although the total cycle time for the sequential 8 bit read is the same as that of the 3.3V conventional DRAM, the sensing current is loered to 0.7mA or less than 2.3% of the current of 3.3V conventional DRAM. 4 stage pipeline scheme is used to rduce the power consumption in the 4 giga bit DRAM data path of which length and RC delay amount to 3 cm and 23.3ns, respectively. A simple wave pipeline scheme is used in the data path where 4 sequential data pulses of 5 ns width are concurrently transferred. With the reduction of the supply voltage from 3.3V to 1.2V, the operation current is lowered from 22mA to 2.5mA while the operation speed is enhanced more than 4 times with 6 ns cycle time.

• The Transactions of the Korea Information Processing Society
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• v.4 no.2
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• pp.628-638
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• 1997

This paper describes an implementation of fault simulator that can switch level fault models such as transistor stuck-open and stuck-closed faults as well as stuck-at faults. It overcomes the limitation when only stuck-at faults are used in VLSI circuits. Signal flow of a transistor switch is bidirectional in its nature, but most of signal flows in a switch level circuits, about 95%, are in one direction. This fault simulator focuses on the way which changes a switch level circuit into a graph model with two directed edges. Two paths from Vdd to ground and from ground to directions. Logic simulation is performed along dominant signal flows. The switch level fault simulation estimates the dominant path by injecting switch-level fualts, and pattern vectors are used for faults simulation. Experimental results are shown to demonstrate correctness of the fault simulator.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.4
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• pp.251-265
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• 2001

As the device scaling proceeds, the operating voltage(VDD) of giga-bit DRAMs is expected to be reduced to 1.5V or down, fir improving the device reliability and reducing the power dissipation. Therefore the low-voltage circuit design techniques are required to implement giga-bit DRAMs. In this work, state-of-art low-voltage DRAM circuit techniques are reviewed, and four kinds of low-voltage circuit design techniques are newly proposed for giga-bit DRAMs. Measurement results of test chips and SPICE simulation results are presented for the newly proposed circuit design techniques, which include a hierarchical negative-voltage word-line driver with reduced subthreshold leakage current, a two-phase VBB(Back-Bias Voltage) generator, a two-phase VPP(Boosted Voltage) generator and a bandgap reference voltage generator.

• Journal of IKEEE
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• v.22 no.2
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• pp.408-412
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• 2018

In this paper, a 26GHz variable gain amplifier fabricated using a 40nm CMOS process is studied. In the case of an automobile radar using 79 GHz, it is advantageous in designing and driving to drive down to a low frequency band or to use a low frequency band before up conversion rather than designing and matching the entire circuit to 79 GHz in terms of frequency characteristics. In the case of a Phased Array System that uses time delay through TTD (True Time Delay) in practice, down conversion to a lower frequency is advantageous in realizing a real time delay and reducing errors. For a VGA (Variable Gain Amplifier) operating in the 26GHz frequency band that is 1/3 of the frequency of 79GHz, VDD : 1V, Bias 0.95V, S11 is designed to be <-9.8dB (Mea. High gain mode) and S22 < (Mea. high gain mode), Gain: 2.69dB (Mea. high gain mode), and P1dB: -15 dBm (Mea. high gain mode). In low gain mode, S11 is <-3.3dB (Mea. Low gain mode), S22 <-8.6dB (Mea. low gain mode), Gain: 0dB (Mea. low gain mode), P1dB: -21dBm (Mea. Low gain mode).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.54-61
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• 2001

A fully on-chip open-drain CMOS output driver was designed for high bandwidth DRAMs, such that its output voltage swing was insensitive to the variations of temperature and supply voltage. An auto refresh signal was used to update the contents of the current control register, which determined the transistors to be turned-on among the six binary-weighted transistors of an output driver. Because the auto refresh signal is available in DRAM chips, the output driver of this work does not require any external signals to update the current control register. During the time interval while the update is in progress, a negative feedback loop is formed to maintain the low level output voltage ($V_OL$) to be equal to the reference voltage ($V_{OL.ref}$) which is generated by a low-voltage bandgap reference circuit. Test results showed the successful operation at the data rate up to 1Gb/s. The worst-case variations of $V_{OL.ref}$ and $V_OL$ of the proposed output driver were measured to be 2.5% and 7.5% respectively within a temperature range of $20^{\circ}C$ to $90^{\circ}C$ and a supply voltage range of 2.25V to 2.75V, while the worst-case variation of $V_OL$ of the conventional output driver was measured to be 24% at the same temperature and supply voltage ranges.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.5
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• pp.25-31
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• 2009

A low power SRAM using supply voltage charge recycling (SVCR-SRAM) scheme is proposed. It divides into two SRAM cell blocks and supplies two different powers. A supplied power is $V_{DD}$ and $V_{DD}/2$. The other is $V_{DD}/2$ and GND. When N-bit cells are accessed, the charge used in N/2-bit cells with VDD and $V_{DD}/2$ is recycled in the other N/2-bit cells with $V_{DD}/2$ and GND. The SVCR scheme is used in the power consuming parts which bit line, data bus, word line, and SRAM cells to reduce dynamic power. The other parts of SRAM use $V_{DD}$ and GND to achieve high speed. Also, the SVCR-SRAM results in reducing leakage power of SRAM cells due to the body-effect. A 64K-bit SRAM ($8K{\times}8$bits) is implemented in a $0.18{\mu}m$ CMOS process. It saves 57.4% write power and 27.6% read power at $V_{DD}=1.8V$ and f=50MHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.458-461
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• 2015

In this paper 2 types of voltage references and a current reference suitable for low-voltage, low-power circuits are proposed and designed with $0.35{\mu}m\;CMOS$ process. MOS transistors operating in weak inversion and bulk-driven technique are utilized to achieve low-voltage and low-power features. The first voltage reference consumes 1.43uA from a supply voltage of 1.2V while it has a reference voltage of 585mV and a TC(Temperature Coefficient) of $6ppm/^{\circ}C$. The second voltage reference consumes 48pW from a supply voltage of 0.3V while having a reference voltage of 172mV and a TC of $26ppm/^{\circ}C$. The current reference consumes 246nA from a supply voltage of 0.75V with a reference current of 32.6nA and a TC of $262ppm/^{\circ}C$. The performances of the designed references have been verified through simulations.

• The KIPS Transactions:PartA
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• v.11A no.2
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• pp.115-122
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• 2004

In this paper, the multiple-valued adders and multipliers are implemented by current-mode CMOS. First, we implement the 3-valued T-gate and the 4-valued T-gate using current-mode CMOS which have an effective availability of integrated circuit design. Second we implement the circuits to be realized 2-variable 3-valued addition table and multiplication table over finite fields $GF(3^2)$, and 2-variable 4-valued addition table and multiplication table over finite fields $GF(4^2)$ with the multiple-valued T-gates. Finally, these operation circuits are simulated under $1.5\mutextrm{m}$ CMOS standard technology, $15\mutextrm{A}$ unit current, and 3.3V VDD voltage Spice. The simulation results have shown the satisfying current characteristics. The 3-valued adder and multiplier, and the 4-valued adder and multiplier implemented by current-mode CMOS is simple and regular for wire routing and possesses the property of modularity with cell array. Also, since it is expansible for the addition and multiplication of two polynomials in the finite field with very large m, it is suitable for VLSI implementation.