• Title/Summary/Keyword: VCSEL(Vertical Cavity Surface Emitting Laser)

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A Compact Tunable VCSEL and a Built-in Wavelength Meter for a Portable Optical Resonant Reflection Biosensor Reader

  • Ko, Hyun-Sung;Kim, Bong-Kyu;Kim, Kyung-Hyun;Huh, Chul;Kim, Wan-Joong;Hong, Jong-Cheol;Park, Seon-Hee;Yang, Seong-Seok;Jang, Ho-Jin;Sung, Gun-Yong
    • Journal of the Optical Society of Korea
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    • v.14 no.4
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    • pp.395-402
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    • 2010
  • This study reports a portable and precision photonic biosensor reader that can measure the concentration of a particular antigen using an optical resonant reflection biosensor (ORRB). To create a compact biosensor reader, a compact tunable vertical-cavity surface-emitting laser (VCSEL) and a compact built-in wavelength meter were manufactured. The wavelength stability and accuracy of the compact built-in wavelength meter were measured to be less than 0.02 nm and 0.06 nm, respectively. The tunable VCSEL emission wavelength was measured with the compact built-in wavelength meter, it has a fast sweep time (~ 10 seconds) and a wide tuning range (> 4 nm) that are sufficient for biosensor applications based on ORRB. The reflection spectrum of a plastic based ORRB chip was measured by the fabricated portable photonic biosensor reader using the VCSEL and wavelength meter. Although the reader is the size of a palmtop device, it could make a precise measurement of the peak wavelength on equal terms with a conventional bulky optical spectrometer.

Characterization of photonic quantum ring devices manufactured using wet etching process (습식 식각 공정을 이용하여 제작된 광양자테 소자의 특성 분석)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin
    • Journal of Convergence for Information Technology
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    • v.10 no.6
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    • pp.28-34
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    • 2020
  • A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

A 12.5-Gb/s Optical Transmitter Using an Auto-power and -modulation Control

  • Oh, Won-Seok;Park, Kang-Yeob;Im, Young-Min;Kim, Hwe-Kyung
    • Journal of the Optical Society of Korea
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    • v.13 no.4
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    • pp.434-438
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    • 2009
  • In this paper, a 12.5-Gb/s optical transmitter is implemented using 0.13-${\mu}m$ CMOS technology. The optical transmitter that we constructed compensates temperature effects of VCSEL (Vertical cavity surface emitting laser) using auto-power control (APC) and auto-modulation control (AMC). An external monitoring photodiode (MPD) detects optical power and modulation. The proposed APC and AMC demonstrate 5$\sim$20-mA of bias-current control and 5$\sim$20-mA of modulation-current control, respectively. To enhance the bandwidth of the optical transmitter, an active feedback amplifier with negative capacitance compensation is exploited. The whole chip consumes only 140.4-mW of DC power at a single 1.8-V supply under the maximum modulation and bias currents, and occupies the area of 1280-${\mu}m$ by 330-${\mu}m$ excluding bonding pads.

Demonstration of Time- and Wavelength-Division Multiplexed Passive Optical Network Based on VCSEL Array

  • Mun, Sil-Gu;Lee, Eun-Gu;Lee, Jie Hyun;Park, Heuk;Kang, Sae-Kyoung;Lee, Han Hyub;Kim, Kwangok;Doo, Kyeong-Hwan;Lee, Hyunjae;Chung, Hwan Seok;Lee, Jong Hyun;Lee, Sangsoo;Lee, Jyung Chan
    • ETRI Journal
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    • v.38 no.1
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    • pp.9-17
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    • 2016
  • We demonstrate a time- and wavelength-division multiplexed passive optical network system employing a vertical-cavity surface-emitting laser array-based optical line terminal transceiver and a tunable bidirectional optical subassembly-based optical network terminal transceiver. A packet error-free operation is achieved after a 40 km single-mode fiber bidirectional transmission. We also discuss an arrayed waveguide grating, a photo detector array based on complementary metal-oxide-semiconductor photonics technologies, and low-cost key devices for deployment in access networks.

Vertical-Cavity Surface-Emitting Laser Device Technology and Trend (표면방출레이저 소자 기술 및 동향)

  • Song, H.W.;Han, W.S.
    • Electronics and Telecommunications Trends
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    • v.20 no.6 s.96
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    • pp.87-96
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    • 2005
  • 반도체 산업의 눈부신 발전은 진공관을 대신할 다이오드와 트랜지스터를 발명함으로써 저전력, 소형화에 성공하였기 때문이며, 또한, IC의 발명으로 이를 집적화하여 대량생산이 가능하고, 제품 제작을 용이하게 함으로써 제품 제작가격을 낮출 수 있게 되었기 때문이다. 이와 마찬가지로 가스 레이저를 대신할 반도체 레이저의 발명은 광통신의 핵심 부품인 광원의 저전력, 소형화를 실현시킴으로써 광통신 시대를 열게 하였다. 반도체 레이저의 발명으로 저전력, 소형화에는 성공하였으나, 비싼 광통신 부품은 본격적인 광통신 시대 실현에 걸림돌이 되고 있다. 반도체 산업의 주역인 IC 칩과 같은 저전력이며, 집적화가 가능하고, 대량 생산이 용이하여 가격이 저렴한 광 부품이 필요하다. 이런 이유로 광 부품 중 핵심 기술인 광원에 있어서는 표면방출레이저(VCSEL)가주목 받고 있다. 본 고에서는 각 파장 대역별로 표면방출레이저 소자의 기술 및 현황을 설명하고, 이들의 다양한 응용 분야 그리고 현재의 표면방출레이저 소자 시장 동향을 살펴 본다.

Fiber Bragg Grating Temperature Sensor by the Wavelength Tuning Using the Temperature Dependence of VCSEL (빅셀(VCSEL)의 온도 의존성을 이용한 파장 가변 형 광섬유 격자 온도센서)

  • Lee, Chung-Ki;Kim, Sung-Moon
    • Korean Journal of Optics and Photonics
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    • v.29 no.6
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    • pp.241-246
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    • 2018
  • In this paper, a low-cost optical temperature sensor is implemented, using a fiber Bragg grating (FBG) as the temperature probe and a low-cost VCSEL with temperature-dependent output wavelength as the light source. To analyze the wavelength of the reflected light from the FBG, an interrogation was applied using a method of referring to the internal temperature according to the output wavelength of the VCSEL. When the temperature of the VCSEL was adjusted from 14 to $52.2^{\circ}C$, the output wavelength varied from 1519.90 to 1524.25 nm. The degree of wavelength tuning according to temperature was $0.114nm/^{\circ}C$. The variable wavelength repeatability error according to temperature was ${\pm}0.003nm$, and the temperature measurement error was ${\pm}0.18^{\circ}C$. As a result of measuring the temperatures from 22.3 to $194.2^{\circ}C$, the value of the internal temperature change of the light source according to the applied temperature ${\Delta}T$ was $0.146^{\circ}C/{\Delta}T$, the change in reflected wavelength of the temperature probe according to applied temperature ${\Delta}T$ was measured at $16.64pm/^{\circ}C$. and the temperature measurement error of the sensor was ${\pm}1^{\circ}C$.

A 4-Channel Multi-Rate VCSEL Driver with Automatic Power, Magnitude Calibration using High-Speed Time-Interleaved Flash-SAR ADC in 0.13 ㎛ CMOS

  • Cho, Sunghun;Lee, DongSoo;Lee, Juri;Park, Hyung-Gu;Pu, YoungGun;Yoo, Sang-Sun;Hwang, Keum Cheol;Yang, Youngoo;Park, Cheon-Seok;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.3
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    • pp.274-286
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    • 2016
  • This paper presents a 4-channel multi-rate vertical-cavity surface-emitting laser (VCSEL) driver. In order to keep the output power constant with respect to the process, voltage, temperature (PVT) variations, this research proposes automatic power and magnitude. For the fast settling time, the high-speed 10-bit time-interleaved Flash-successive approximation analog to digital converter (Flash-SAR ADC) is proposed and shared for automatic power and magnitude calibration to reduce the die area and power consumption. This chip is fabricated using $0.13-{\mu}m$ CMOS technology and the die area is $4.2mm^2$. The power consumption is 117.84 mW per channel from a 3.3 V supply voltage at 10 Gbps. The measured resolution of bias /modulation current for APC/AMC is 0.015 mA.

Optical Transceiver Module for Next-generation Automotive Optical Network, MOST1000 (차세대 자동차 광네트워크 MOST1000 용 광트랜시버 모듈)

  • Kim, Gye Won;Hwang, Sung Hwan;Lee, Woo-Jin;Kim, Myoung Jin;Jung, Eun Joo;An, Jong Bea;Kim, Jin Hyeok;Moon, Jong Ha;Rho, Byung Sup
    • Korean Journal of Optics and Photonics
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    • v.24 no.4
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    • pp.196-200
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    • 2013
  • Heretofore, it was enough that most of optical transceiver modules for automotive networks have the performance of data rate from 10 Mbps to 150 Mbps. As the required data rate in automotive infotainment systems has recently been increasing, the development of a new optical transceiver having high speed data rate over 1Gbps is now required. Therefore, we suggested a next-generation bi-directional optical transceiver module using vertical cavity surface emitting laser technology and plastic clad fiber technology, for the next-generation automotive optical network, MOST1000. We fabricated the high-speed and compact optical transceiver having 1 Gbps data rate and -22 dBm sensitivity satisfying bit error rate $10^{-12}$.

Characteristics of an 1.25 Gbps 850 nm Oxide VCSEL Transmitter Operating at Fixed Current over a Wide Temperature Range (넓은 온도 범위에서 고정 구동전류로 동작하는 1.25 Gbps 850 nm 산화형 VCSEL 송신기의 특성)

  • Kim, Tae-Ki;Kim, Tae-Yong;Kim, Sang-Bae;Kim, Sung-Han
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.12
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    • pp.43-53
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    • 2007
  • We have analyzed low current operation characteristics of a VCSEL transmitter operating at fixed Current over wide temperature range. Used 850 nm oxide VCSEL has low temperature dependence of the threshold current and $d^2I_{th}/dT^2$ is approximately $1.346\times10^{-4}mA/^{\circ}C^2$. We fixed on-current so that output power from the chip is 1 mW at $20^{\circ}C$ and investigated the turn-on, turn-off characteristics and eye-diagram of the 850 nm oxide VCSEL transmitter with varying ambient temperature and off-current. We measured rise time, fall time, extinction ratio and timing jitter by changing tile ambient temperature and off-current. With the fixed off-current of around $0.1\sim0.2mA$ lower than the lowest threshold current the transmitter successfully operated at 1.25 Gbps over a wide temperature range from $-20^{\circ}C$ to $80^{\circ}C$.