• Radiation Oncology Journal
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• v.16 no.2
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• pp.99-106
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• 1998

Purpose : We conducted clonogenic assay using human cancer cell lines (MKN-45, PC-14, Y-79, HeLa) to investigate a correlation between the parameters of radiosensitivity. Materials and Methods : Human cancer cell lines were irradiated with single doses of 1, 2, 3, 5, 7 and 10Gy for the study of radiosensitivity and subrethal damage repair capacity was assessed with two fractions of 5Gy separated with a time interval of 0, 1, 2, 3, 4, 6 and 24 hours. Surviving fraction was assessed with clonogenic assay using $Sperman-H\"{a}rbor$ method and mathematical analysis of survival curves was done with linear-quadratic (LQ) , multitarget-single hit(MS) model and mean inactivation dose$(\v{D})$. Results : Surviving fractions at 2Gy(SF2) were variable among the cell lines, ranged from 0.174 to 0.85 The SF2 of Y-79 was lowest and that of PC-14 was highest(p<0.05, t-test). LQ model analysis showed that the values of $\alpha$ for Y-79, MKN-45, HeLa and PC-14 were 0.603, 0.356, 0.275 and 0.102 respectively, and those of $\beta$ were 0.005, 0.016, 0.025 and 0.027 respectively. Fitting to MS model showed that the values of Do for Y-79. MKN-45, HeLa and PC-14 were 1.59. 1.84. 1.88 and 2.52 respectively, and those of n were 0.97, 1.46, 1.52 and 1 69 respectively. The $\v{D}s$ calculated by Gauss-Laguerre method were 1.62, 2.37, 2,01 and 3.95 respectively So the SF2 was significantly correlated with $\alpha$, Do and $\v{D}$. Their Pearson correlation coefficiencics were -0.953 and 0,993. 0.999 respectively(p<0.05). Sublethal damage repair was saturated around 4 hours and recovery ratios (RR) at plateau phase ranged from 2 to 3.79. But RR was not correlated with SF2, ${\alpha}$, ${\beta}$, Do, $\v{D}$. Conclusion : The intrinsic radiosensitivity was very different among the tested human cell lines. Y-79 was the most sensitive and PC-l4 was the least sensitive. SF2 was well correlated with ${\alpha}$, Do, and $\v{D}$. RR was high for MKN-45 and HeLa but had nothing to do with radiosensitivity parameters. These basic parameters can be used as baseline data for various in vitro radiobiological experiments.

• Biomedical Science Letters
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• v.11 no.2
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• pp.165-173
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• 2005

A potent demethylating agent, 5-Azacytidine (5-AzaC) has been widely used as in many studies on DNA methylation, regulation of gene expression, and cancer biology. The mechanisms of the demethylating activity were known to be formation of complex between DNA and DNA methyltransferase (MTase), which depletes cellular MTase activity. However, 5-AzaC can also induce hypermethylation of a transgene in a transgenic cell line, G12 cells and it was explained as a result of defense mechanisms to inactivate foreign gene(s) somehow. This finding evoked the question that whether the phenomenon of hypermethylation induced by 5-AzaC is limited to the transgene or it can be occurred in endogenous gene(s). In order to answer the question, mutagenicity test of 5-AzaC and molecular characterization of mutants obtained from the test were performed using an endogenous gene, thymidine kinase (tk) in Chinese hamster V79 cells. When V79 and V79-J3 subclone cells were treated with 1, 2.5 ,5, $10{\mu}M$ of 5-AzaC for 48 hours, their maximum mutant frequencies were revealed as $6\times10^{-3}\;at\;5{\mu}M$(350-fold induction over background) and $8\times10^{-3}\;at\;2.5{\mu}M$ (l,800-fold induction over background) respectively. Since the induction rates were too high to be induced by true mutations, many trifluorothymidine (TFT)-resistant $(TFT^R)$ cells were subjected to Northern blot analysis to check the presence of tk transcripts. Surprisingly, all clones tested possessed the transcripts in a similar level, that implicates the $TFT^R$ phenotype induced by 5-AzaC has not given rise to hypermethylation of the gene in spite of unusually high mutation frequency. In addition, it has shown that the TK activity in the pool of 5-AzaC-induced $TFT^R$ cells has about a half of that in spontaneously-induced $TFT^R$ cells or in non-selected parental V79-J3 cells. This result suggests that the mechanism(s) underlying the TFT-resistance between spontaneously occurred and 5-AzaC-induced cells may be different. These findings have shown that the $TFT^R$ phenotype induced by 5-AzaC has not given rise to hypermethylation of the tk gene, and 5-AzaC may be induced by one or combined pathways among many drug resistance mechanisms. The exact mechanisms for the 5-AzaC-induced $TFT^R$ phenotype remain to elucidate.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.2
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• pp.79.2-79.2
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• 2010

We present the results of simultaneous observations of SiO v=1, 2, J=1-0, $^{29}SiO$ v=0, J=1-0, and $H_2O$ $6_{16}-5_{23}$ maser lines performed with the KVN Yonsei 21 m radio telescope from 2009 Nov. to 2010 Jan (ApJ, 719, 126, 2010). We searched for these masers in 47 symbiotic stars and detected maser emission from 21 stars, giving the first time detection from 19 stars. Both SiO and $H_2O$ masers were detected from seven stars of which six stars are D-type symbiotic and one is an S-type star, WRAY 15-1470. In the SiO maser emission, the $^{28}SiO$ v=1 maser was detected from 10 stars, while the v=2 maser detected from 15 stars. In particular, the $^{28}SiO$ v=2 maser emission without the v=1 maser detection was detected from nine stars with its detection rate of 60 %, which is much higher than that of isolated Miras/red giants. The $^{29}SiO$ v=0 maser emission was also detected from two stars, H 2-38 and BF Cyg, together with the $^{28}SiO$ v=2 maser. We conclude that these different observational results between isolated Miras/red giants and symbiotic stars may be related with the presence of hot companions in a symbiotic binary system.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.79-80
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• 2007

환경정책기본법과 소음 진동규제법의 소음배출 허용기준은 사업장에서 발생하는 소음을 주간 55dB, 야간 45dB로 규제하고 있으나, 한국전력공사 및 변압기 제작사의 154kV 전력용 변압기 소음 허용기준은 79dB로 환경정책기본법과 소음 진동규제법에 크게 미달되어있고, 이로인한 소음민원이 빈번하게 발생되고 있다. 이에 소음규제에 부합되고, 소음민원을 근본적으로 해결하기 위해서 154kV 저소음 변압기를 개발 중에 있다. 본 논문은 일진중공업의 154kV 저소음 변압기 개발에 관한 전반적인 진행현황을 기술한다.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1020-1025
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• 1995

The Schottky barrier hieght(SBH) of Au/n-Si(100) were investigated by current-voltage(I-V) and capacitance voltage(C-V) measurement within a temperature range of l00K∼300K. The values of SBH at room temperature obtained from these two measurements were (0.79${\pm}$0.02)eV. The SBH obtained from the C-V measurement was temperature independent, while that obtained from the I-V measurement decreased linearly with decreasing temperature. This indicates that the Schottky diode has deviated from the thermionic emission theory at low-temperature, Thus, other current transport processes were considered and the contribution of recombination current was dominant at low temperature. We found that it leads to a lower SBH value. Thus, the conflicating results between C-V and I-V measurement were explained, C-V measurement is believed to yield mare reliable SBH values in present study since it is not affected by the current transport uncertainties.

• Journal of Korea Fair Competition Federation
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• no.79
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• pp.43-45
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• 2002

• Radioisotope journal
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• v.17 no.2
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• pp.70-79
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• 2002

• Water for future
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• v.29 no.1
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• pp.79-84
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• 1996

• Korean Journal of Pharmacognosy
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• v.36 no.1 s.140
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• pp.34-37
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• 2005

Reactive oxygen species (ROS) are known to cause oxidative modification of DNA, proteins, lipids and small cellular molecules and are associated with tissue damage and are the contributing factors for inflammation, aging, cancer, arteriosclerosis, hypertension and diabetes. We screened the anti-oxidants in V79-4 hamster lung fibroblast cells induced by hydrogen peroxide with eighteen pure compounds isolated from natural products. Allantoin, brassicasterol, and hypaconitine were found to strongly scavenge intracellular reactive oxygen species, which is measured by dichlorodihydrofluorescin diacetate method (DCHF-DA), and 1,1-diphenyl-2-picrylhydrazyl (DPPH) radical.

• Journal of IKEEE
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• v.25 no.3
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• pp.511-516
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• 2021

The electrical characteristics of AlGaN/GaN/HEMT and MOSHFETs with NiO were studied. The threshold voltage of NiO MOSHFET revealed positive shift of +1.03 V than the -3.79 V of HEMT and negative shift of -1.73 V for SiO₂ MOSHFET. Also, NiO MOSHFET showed better linearity in drain current corresponding to gate voltage and higher transconductance at positive gate voltage than the others. The response of gate pulse with base voltage of -5 V was different for both transistors as HEMT showed 20 % drain current decrease at the frequency range of 0.1 Hz~10 Hz and NiO MOSHFET decreased continuously above 10 Hz.