• Title/Summary/Keyword: V4

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Synthesis of Silicon Carbide Whiskers (I) : Reaction Mechanism and Rate-Controlling Reaction (탄화규소 휘스커의 합성(I) : 반응기구의 율속반응)

  • 최헌진;이준근
    • Journal of the Korean Ceramic Society
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    • v.35 no.12
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    • pp.1336-1336
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    • 1998
  • A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

A cytotaxonomic study of Vicia L. (Fabaceae) in Korea (한국산 나비나물속(콩과)의 세포분류학적 연구)

  • Nam, Bo Mi;Park, Myung Soon;Oh, Byoung Un;Chung, Gyu Young
    • Korean Journal of Plant Taxonomy
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    • v.42 no.4
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    • pp.307-315
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    • 2012
  • Somatic chromosome numbers for 10 taxa and karyotypes analysis for 6 taxa of Korean Vicia were investigated. Somatic chromosome numbers of treated taxa were 2n = 12, 14 or 24 and therefore they proved to be diploid or tetraploid with basic chromosome numbers of x = 6 or 7. The chromosome number of V. hirticalycina (2n = 2x = 12) was reported for the first time in this study. The chromosome numbers of nine taxa were the same as in previous studies; V. angustifolia (2n = 2x = 12), V. cracca (2n = 4x = 24), V. hirsuta (2n = 2x = 14), V. tetrasperma (2n = 2x = 14 + 2B), V. amurensis (2n = 2x = 12), V. chosenensis (2n = 2x = 12, 12 + 2B), V. unijuga (2n = 4x = 24), V. unijuga f. minor (2n = 4x = 24), V. venosa var. cuspidata (2n = 4x = 24). The karyotypes of V. cracca, V. amurensis, V. hirticalycina, V. unijuga, V. unijuga f. minor, V. venosa var. cuspidata were observed as 2 m + 8 sm + 2 st, 2 m + 2 sm + 2 st, 3 m + 1 sm + 2 st, 4 m + 6 sm + 2 st, 4 m + 6 sm + 2 st, 4 m + 8 sm, respectively.

Comparisons of Image Quality and Entrance Surface Doses according to Care Dose 4D + Care kV in Chest CT (Chest CT에서 Care Dose 4D+Care kV에 따른 화질과 입사표면선량 비교)

  • Kang, Eun-Bo
    • Journal of the Korean Society of Radiology
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    • v.16 no.1
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    • pp.45-51
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    • 2022
  • This study compared DLP values along with phantom entrance surface doses and the image quality of chest CT scans made using a Care Dose 4D+Care kV System, scans that are made using only the Care Dose 4D function, and scans that are made with changes made by applying 80 kVp, 100 kVp, 120 kVp, and 140 kVp to the Care Dose 4D and tube voltage to search for methods to maintain the highest image quality with minimal patient doses. It was shown that DLP values decreased 6.727% when scans were taken with Chest Care Dose 4D + Care kV semi 100 and 6.481% when scans were taken with Chest Care Dose 4D + Care kV. With Chest Non as a standard, skin surface doses decreased 16.519% when scans were taken with Chest Care Dose 4D + Care kV semi 100 and 15.705% when scans were taken with Chest Care Dose 4D + Care kV. With comparisons of image quality, when comparisons were made with Chest Non, comparisons made of SNR values and CNR values in all scanning conditions including Care Dose 4D + Care kV showed that there were no significant differences at P>0.05. Imaging using Chest Care Dose 4D + Care kV in chest CT showed that exposure doses decreased similarly to result values gained from the best conditions through manual adjustments of kV and mAS, and there were no significant differences in image SNR and CNR. If the Chest Care Dose 4D + Care kV function is used, image quality is maintained and patient exposure to radiation can be reduced.

Synthesis and Photovoltaic Properties of Low Band Gap π-conjugated Polymers Based on 2-pyran-4-ylidene-malononitrile Derivatives (2-pyran-4-ylidene-malononitrile을 기본으로 하는 작은 Band Gap을 가지는 공중합체의 합성 및 광전변환 특성)

  • You, Hyeri;Shin, Woong;Park, Jeong Bae;Park, Sang Jun;Lim, Jun Heok;Kim, Joo Hyun
    • Applied Chemistry for Engineering
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    • v.20 no.3
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    • pp.273-278
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    • 2009
  • A series of poly[2-(2,6-dimethylpyran-4-ylidene)malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PM-PPV), poly[2-{2,6-Bis-[2-(5-bromothiophen-2-yl)-vinyl]-pyran-4-ylidene}-malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PMT-PPV) and poly[2-[2,6-Bis-(2-{4-[(4-bromophenyl)-phenylamino]-phenyl}-vinyl)-pyran-4-ylidene]-malononitrile-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene] (PMTPA-PPV) were synthesized by the Heck coupling reaction. The band gap of PM-PPV, PMT-PPV and PMTPA-PPV were 2.18 eV, 1.90 eV and 2.07 eV, respectively. The LUMO energy levels of PM-PPV, PMT-PPV and PMTPA-PPV were 3.65 eV, 3.54 eV and 3.62 eV, respectively and the HOMO energy levels of those were 5.83 eV, 5.61 eV and 5.52 eV, respectively. The photovoltaic devices based on the polymers was fabricated. The efficiency of the solar cells based on PM-PPV, PMT-PPV and PMTPA-PPV were 0.028%, 0.031% and 0.11%, respectively and the open circuit voltage (Voc) was 0.59 V~0.69 V under AM 1.5 G and 1 sun condition ($100mA/cm^2$).

Synthesis and Electrochemical Characteristics of Carbon added Li3V2(PO4)3 (탄소첨가한 Li3V2(PO4)3의 합성 및 전기화학적 특성)

  • Jo, Yeong-Im;Na, Byung-Ki
    • Journal of the Korean Electrochemical Society
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    • v.15 no.2
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    • pp.101-108
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    • 2012
  • The purpose of this study was to improve the conductivity of $Li_3V_2(PO_4){_3}$ by adding carbon source so that the discharge rate and cyclic properties were improved. Glucose and CNT were added to $Li_3V_2(PO_4){_3}$ and the structure and electrochemical properties were studied. $Li_3V_2(PO_4){_3}$, $Li_3V_2(PO_4){_3}$/C and $Li_3V_2(PO_4){_3}$/CNT were synthesised by solid state reaction using hydrogen reduction method at 600, 700, 800, $900^{\circ}C$. The cathode materials were assembled to coin cell type 2032 with Lithium metal as a counter electrode. The coin cell was galvanostatically evaluated in the voltage range of 3.0~4.8 V.

High-Level Expression of T4 Endonuclease V in Insect Cells as Biologically Active Form

  • Kang, Chang-Soo;Son, Seung-Yeol;Bang, In-Seok
    • Journal of Microbiology and Biotechnology
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    • v.16 no.10
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    • pp.1583-1590
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    • 2006
  • T4 endonuclease V (T4 endo V) [EC 3. 1. 25. 1], found in bacteriophage T4, is responsible for excision repair of damaged DNA. The enzyme possesses two activities: a cyclobutane pyrimidine dimer DNA glycosylase (CPD glycosylase) and an apyrimidic/apurinic endonuclease (AP lyase). T4 denV (414 bp cDNA) encoding T4 en do V (138 amino acid) was synthesized and expressed using either an expression vector, pTriEx-4, in E. coli or a baculovirus AcNPV vector, pBacPAK8, in insect cells. The recombinant His-Tag/T4 endo V (rHis-Tag/T4 endo V) protein expressed from bacteria was purified using one-step affinity chromatography with a HiTrap Chelating HP column and used to make rabbit anti-His-Tag/T4 endo V polyclonal antibody for detection of recombinant T4 endo V (rT4 endo V) expressed in insect cells. In the meantime, the recombinant baculovirus was obtained by cotransfection of BacPAK6 viral DNA and pBP/T4 endo V in Spodoptera frugiperda (Sf21) insect cells, and used to infect Sf21 cells to overexpress T4 endo V protein. The level of rT4 endo V protein expressed in Sf21 cells was optimized by varying the virus titers and time course of infection. The optimal expression condition was set as follows; infection of the cells at a MOI of 10 and harvest at 96 h post-infection. Under these conditions, we estimated the amount of rT4 endo V produced in the baculovirus expression vector system to be 125 mg/l. The rT4 endo V was purified to homogeneity by a rapid procedure, consisting of ion-exchange, affinity, and reversed phase chromatographies, based on FPLC. The rT4 endo V positively reacted to an antiserum made against rHis-Tag/T4 endo V and showed a residual nicking activity against CPD-containing DNA caused by UV. This is the first report to have T4 endo V expressed in an insect system to exclude the toxic effect of a bacterial expression system, retaining enzymatic activity.

Theory of Radiative Transfer for 3.3-micron $CH_4$ emissions from the Auroral Regions of Jupiter

  • Kim, Sang Joon;Sohn, Mirim
    • The Bulletin of The Korean Astronomical Society
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    • v.39 no.1
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    • pp.66.1-66.1
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    • 2014
  • Radiative transfer programs to simulate the 3-micron auroral $CH_4$ emissions of Jupiter have been developed. The formalism of the radiative transfer calculations including the thermal, fluorescent, and auroral emissions of the $CH_4$ bands for an atmospheric layer having an optical depth of ${\tau}_v$ is given by: ${\mu}dI_v/d{\tau}_v=I_v-{\varpi}_v{^*}J_v(1-{\varpi}_v{^*})B_v-{\varpi}{^*}F_{ov}{e}{x}{p}(-{\tau}_v/{\mu}_o)4{\pi}-hv{\varpi}{^*}V/4{\pi}$ where ${\varpi}_v{^*}$ is the single scattering albedo of $CH_4$ consisting of Einstein A coefficient and collisional deexcitation rate. Other terms are usual radiative transfer parameters appearing in textbooks including the terms for scattered ${\varpi}_v{^*}J_v$, thermal $(1-{\varpi}_v{^*})B_v$, and attenuated solar radiations $F_{ov}$ at the certain atmospheric layer. For auroral excitations, we include V, which is the number of excited states per $cm^3$ persec by auroral particle bombardments. We apply this formalism to the high-resolution spectra of the auroral regions observed with GNIRS/Gemini North, and will present preliminary results for the 3 micron auroral processes of Jupiter.

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A Design of Digital Instrumentation Amplifier converting standard sensor output signals into 5V voltage-output (표준 센서 출력신호를 5V 전압-출력을 변환하는 디지털 계측 증폭기 설계)

  • Cha, Hyeong-Woo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.11
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    • pp.41-47
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    • 2011
  • A novel digital instrumentation amplifier(DIA) converting universal signal inputs into 5V voltage-output for industry standard sensor signal processing was designed. The circuit consists of a commercial instrumentation amplifier, seven analog switches, two voltage references of 1.0V and -10.0V, and four resistors. The converting principle is the circuit reconstruction by switches for resistor values and reference voltages according to input signals. The simulation result shows that the DIA has a good output voltage characteristics of 0~5V for the input voltage of 0V~5V, 1V~5V, -10V~+10V, and 4mA~20mA. The nonlinearity error was less than 0.1% for the four type signal inputs.

Studies on the Estimation of Leaf Production in Mulberry Trees IV. Estimation of Spring Leaf Yield by the Measurement of Some Characters (상엽수확고 측정에 관한 연구 제 4보 추기상수각형질의 측정에 의한 익춘 상엽량의 예측)

  • 한경수;장권열;안정준
    • Journal of Sericultural and Entomological Science
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    • v.10
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    • pp.35-40
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    • 1969
  • Various formulae for estimation of spring leaf production in mulberry trees were calculated and obtained. Four varieties of mulberry trees were used as the materials, and four characters, namely branch length (X$_1$), node number (X$_2$), branch diameter (X$_3$) and branch number per stock (X$_4$) were studied. The formulae to estimate the leaf yield of spring mulberry trees are as follows: 1. $Y_1$v$_1$= -26.8939+50.3950X$_1$+1.1403X$_2$ $Y_1$v$_2$= -372.1091+116.6371X$_1$+0.1984X$_2$ $Y_1$v$_3$= 149.8203+90.5125X$_1$-0.9775X$_2$ $Y_1$v$_4$= 108, 1496+59.4533X$_1$+1.4965X$_2$ Where $Y_1$v$_1$, $Y_1$v$_2$, $Y_1$v$_3$, $Y_1$v$_4$, are showed the estimated yield of the each variety, namely Gaeryang Seuban, Ilchirye, Nosang, and Suwon Sang No. 4, respectively. X$_1$ and X$_2$ denote the measured values of branch length and node number, respectively. 2. $Y_{7}$v$_1$= -54.4411+32.9869c1.1127X$_2$+21.7600X$_3$ $Y_{7}$v$_2$= -494.1480-1.8756X$_1$+0.9788X$_2$+110.0039X$_3$ $Y_{7}$v$_3$= 143.2836+29.1779X$_1$+0.1644X$_2$+48.4135X$_3$ $Y_{7}$v$_4$= 1243.2549+1.9454X$_1$+2.7118X$_2$-75.6669X$_3$ Where $Y_{7}$v$_1$, $Y_{7}$v$_2$, $Y_{7}$v$_3$, $Y_{7}$v$_4$, are the estimated yield of the each variety, namely Gaeryang-Seuban, Ilchirye, Nosang, Suwon Sang No 4, respectively. X$_1$, X$_2$, X$_3$ denote the measured values of each character, branch length, node number, branch diameter and branch number per stock, respectively. 3. $Y_{11}$v$_1$=233.4780+74.3713X$_1$+1.2912X$_2$+39.0420X$_3$-148.9300X$_4$ $Y_{11}$v$_2$=-317.0150+15.l524X$_1$+1.0861X$_2$+156.7973X$_3$-148.3742X$_4$ $Y_{11}$v$_3$=178.7011+29.8664X$_1$-0.2562X$_2$+102.4632X$_3$-83.2693X$_4$ $Y_{11}$v$_4$= 264.0062+47.7742X$_1$+2.6996X$_2$+92.8882X$_3$-192.3464X$_4$ Where $Y_{11}$v$_1$, $Y_{11}$v$_2$, $Y_{11}$v$_3$, $Y_{11}$v$_4$, are the estimated yield values of four varieties, and X$_1$, X$_2$, X$_3$, X$_4$, denote the measured values of four characters, namely branch length, node number, branch diameter and branch number per stock, respectively. The estimation method of mulberry spring leaf yield by measurement of some characters, in autumn the year before, could be the better method to determine the leaf yield of mulberry trees without destroying the leaves and without weighting the leaves of mulberry trees than the other methods.

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4H-SiC MESFET Large Signal Modeling using Modified Materka Model (Modified Materka Model를 이용한 4H-SiC MESFET 대신호 모델링)

  • 이수웅;송남진;범진욱
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.6
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    • pp.890-898
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    • 2001
  • 4H-SiC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco\`s 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8 V pinch off voltage, under V$\_$GS/=0 V, V$\_$DS/=25 V conditions, I$\_$DSS/=270 mA/mm, G$\_$m/=52.8 ms/mm were obtained. Through the power simulation 2 GHz, at the bias of V$\_$GS/-4 V md V$\_$DS/=25 V, 10 dB Gain, 34 dBm (1dB compression point)output porter, 7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.d.

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