• Korean journal of food and cookery science
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• v.12 no.1
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• pp.6-12
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• 1996

The survival and growth of Vibrio parahaemolyticus in tryptic soy broth(TSB), flounder homogenate and oyster homogenate with 0 or 5% of ethanol was tested at -20, 5, 35, 45 and 50$^{\circ}C$. Growth pattern of V. parahaemolyticus was similar in TSB and flounder homogenate but slightly poor in oyster homogenate at 35$^{\circ}C$. Growth occured at 5% ethanol, in TSB and flounder homogenate after a prolonged lag period but decreased in oyster homogenate during incubation at 35$^{\circ}C$. TSB and fish homogenates containing 0 or 5% of ethanol were inoculated with 10$\^$6/-10$\^$7/ cells/ml of V. parahaemolyticus and cold or heat resistance of the cells were determined at -20, 5, 45 and 50$^{\circ}C$. At 5$^{\circ}C$, the viability in culture broth with 5% of ethanol or without ethanol was not vary with the culture broth. In the presence of 5% of ethanol at -20$^{\circ}C$, cells of V. parahaemolyticus in flounder homogenate and oyster homogenate were more significantly inhibited than in TSB. The D-valves for V. parahaemolyticu at 45 and 50$^{\circ}C$ was significantly lower in oyster homogenate than in TSB and flounder homogenate with 5% of ethanol or without ethanol. The D-values in each culture broth without ethanol were 1.9-3.5 times of that value in each culture broth containing 5% of ethanol at 45 and 50$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.279-285
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• 2003

Ferroelectric S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$ thin films with 200 nm thicknesses were deposited on Pt/Ti $O_2$/ $SiO_2$/Si Substrates by a sol-gel method. In these experiments, Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$ and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. After UV-irradiation and RTA processes, the remanent polarization value (2 $P_{r}$) of SBTN thin films with annealed at $650^{\circ}C$ was 8.49 and 11.94 $\mu$C/$\textrm{cm}^2$ at 3 V and 5 V, respectively.

• YAKHAK HOEJI
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• v.40 no.2
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• pp.193-201
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• 1996

In order to study the role of C-terminal aromatic region of T4 endonuclease V in the interaction with substrate DNA, NMR and Fluorescence spectrum were recorded. Analysis of flu orescence emission spectra showed that C-terminal region of T4 endonuclease V is in or very near the binding site. In the HSQC spectrum of $^{15}N$-Tyr-labeled T4 endonuclease V*DNA complex, the broadening of a peak was observed. It is presumed that this peak corresponds to one among three tyrosine residues which belong to the WYKYY segment of C-terminal region of T4 endonuclease V. Interactions of peptide fragments consisting of C-terminal residues of T4 endonuclease V with DNAs(TT-, T^T-DNA) were investigated by NMR and Fluorescence experiment. The results suggest that two peptide fragments themselves bind to DNAs and their binding pattern is not an intercalation mode.

• Journal of radiological science and technology
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• v.21 no.1
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• pp.59-64
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• 1998

[ $CaSO_4$ ] thermoluminescent phosphors was made by sintring the $CaSO_4$ after doping the transition elements Tm, Pd, Dy, V, Mo, Zr. The maximum Peaks are found in the measured $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) TL glow curve at $130^{\circ}C,\;110^{\circ}C,\;140^{\circ}C,\;100^{\circ}C$, and $120^{\circ}C$ when the heating rate is $5^{\circ}C/sec$. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies are 1.02eV, 1.32eV, 1.12eV, 0.80eV, and 1.17eV, respectively. The thermoluminescence process in $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr)are found to the 2nd order when the main peak of the glow curve is analyzed by peak shape method. The dose responses of $CaSO_4$(Tm, Pd, Dy, V, Mo, Zr) phosphors are linear within $4{\times}10^{-4}{\sim}1Gy$ of X-rays.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.415-418
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• 2001

The I-V characteristics and its stability of ZPCCL-based ceramic varistors doped with La$_2$O$_3$in the range of 0.0~4.0 mol% were investigated. The density of ceramics was increased in the range of 4.7~5.8 g/cm$^3$ with increasing La$_2$O$_3$content. As La$_2$O$_3$content is increased, the varistor voltage was decreased in the range of 503.49-9.42 V/mm up to 2.0 mol%, whereas increasing La$_2$O$_3$content further caused it to increase. The ZPCCL-based varistors were characterized by nonlinearity, in which the nonlinear exponent is in the range of 3.05~82.43 and leakage current is in the range of 0.24-100.22 $\mu$A. Among ZPCCL-based varistors, 0.5 mol% added-varistors exhibited an excellent nonlinearity, in which the nonlinear exponent is 82.43 and the leakage current is 0.24 $\mu$A. Furthermore, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent was -1.11% and -6.72%, respectively, under DC stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$//12h) +(0.90 V$_{1mA}$12$0^{\circ}C$//12h)+(0.95 V$_{1mA}$1$25^{\circ}C$//12h)+(0.95 V$_{1mA}$15$0^{\circ}C$//12h). Consequently, it was estimated that ZPCCL-based ceramics will be applied to development of Pr$_{6}$O$_{11}$ based ZnO varistors having a high performance.e.rformance.e.

• Journal of Life Science
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• v.13 no.4
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• pp.498-504
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• 2003

This Study was carried out to investigate the optimal mycelial growth of Pholiota nameko. The optimal medium for the mycelial growth was ME medium. The optimal temperature and pH were $25^{\circ}C$$\pm$1 and 5.5, respectively. The modified optimal medium compositions were glucose 3% (w/v), malt extract 0.25% (w/v), yeast extract 0.25% (w/v), $KH_2PO_4$ 0.046% (w/v), $K_2HPO_4$ 0.1% (w/v), $MgSO_4$ㆍ$7H_2O$ 0.05% (w/v). From the result of experiments on the optimal temperature, pH and nutritional requirements, the mycelial growth of modified optimal medium was higher than that of ME medium.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.690-695
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• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.2
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• pp.56-61
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• 2016

Heating experiments using the Ti-3Al-2.5V tube materials in a vacuum furnace have been performed to investigate a pertinent range of working temperatures and holding times for the development of the successive or simultaneous operation of superplastic hydroforming and diffusion bonding. The specimens were heated at $820^{\circ}C$, $870^{\circ}C$ and $920^{\circ}C$ respectively. Holding times at each temperature were varied up to 4 hours. Holding times longer than 1 hour were selected to consider the diffusion bonding process after or during the hydroforming process in the superplastic state. Grain sizes were varied from $5.7{\mu}m$ of the as-received tube to $9.2{\mu}m$ after heating at $870^{\circ}C/4hours$. Homogeneus granular microstructures could be maintained up to $870^{\circ}C$, while microstructures at $920^{\circ}C$ showed no more granular type.