• Korean Journal of Materials Research
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• v.4 no.6
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• pp.715-722
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• 1994

Thermochromic $Vo_{2}$ thin films for "smart windows" were prepared by electron beam evaporationmethod on a glass substrate and spectral transmittances were examined by spectrophotometer. Substratetemperature of $300^{\circ}C$ and annealing temperature of $400^{\circ}C$ were found to be effective to give athermochromism on $Vo_{2}$ thin film due to the crystallization of the thin film. Furthermore, annealing of$Vo_{2}$ thin film affected the spectral transmittance and reduced the transmittance significantly at wavelengthbelow 500nm.$V_{0.95}W_{0.05}O_{2}$ thin film doped by 5 atomic percent of W showed semiconductor-metal transition around 0$0^{\circ}V_{0.995}W_{0.005}O_{2}$thin film which contains 0.5 atomic percent Sn showed therrnochrornisrn when it was depositedat substrate temperature of $300^{\circ}C$ and annealed at $450^{\circ}C$ for 5 hours in argon gas. The transitiontemperature of the $V_{0.995}W_{0.005}O_{2}$ thin film was found to be about $25^{\circ}C$ and showed some hysterisis. and showed some hysterisis.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 1998.10a
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• pp.376-381
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• 1998

The large scaled field test by prefabricated vertical drains was performed to evaluate the superiority of vertical discharge capacity for drain materials through compare and analyze the time-settlement behavior with drain spacing and the compression index and consolidation coefficient obtained by laboratory experiments and field monitoring system 1. The relation of measurement settlement( $S_{m}$) versus design settlement( $S_{t}$) and measurement consolidation ratio( $U_{m}$) versus design consolidation ratio( $U_{t}$) were shown $S_{m}$=(1.0~l.1) $S_{t}$, $U_{m}$=(1.13~l.17) $U_{t}$, at 1.0m drain spacing and $S_{m}$=(0.7~0.8) $S_{t}$, $U_{m}$=(0.92~0.99) $U_{t}$ at 1.5m drain spacing, respectively. 2. The relation of field compression index( $C_{cfield}$) and virgin compression index( $V_{cclab}$) was shown $C_{cfield}$=(1.0~1.2) $V_{cclab}$, But it was nearly same value when considered the error with determination method of virgin compression index and prediction method of total settlement. 3. field consolidation coefficient was larger than laboratory consolidation coefficient, and the consolidation coefficient ratio( $C_{h}$/ $C_{v}$) were $C_{h}$=(2.4 ~ 3.0) $C_{v}$. $C_{h}$=(3.5 ~ 4.3) $C_{v}$ at 1.0m and 1.5m drain spacing and increased with increasing of drain spacingngasing of drain spacingng spacingng

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.15 no.4
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• pp.115-128
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• 2016

Many research activities to reduce accidents on the road and to improve traffic efficiency have been performed and almost research projects are developing technologies and services based on C-ITS technology nowadays. The main concept of C-ITS is improving road safety and traffic efficiency by sharing and reproducing information between various elements. To accomplish this goal, V2X communication technology has been adopted. In Korea, we have studied V2X communication technology in support of SMART-Highway research project and are managing test-bed to verify the developed technology recently. In this paper, we introduce SMART-Highway test-bed and show the procedure and result of V2X communication performance analysis on the test-bed.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.15 no.5
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• pp.29-41
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• 2016

V2X environment is the most popular part of the C-ITS based on the high technologies. To evaluate V2X environment technologies, radio communication range and market penetration rate of V2X vehicle are used. This paper studies the V2X environment considering various traffic congestion level, radio communication range and market penetration rate of V2X vehicle using the microscopic simulation (VISSIM) based on proper parameters and algorithm. In conclusion, V2X environment can reduce the congestion in proper traffic volume. However, if traffic volume is almost near the capacity, even V2X environment can't relieve the road condition. Furthermore, increase of the radio communication range does not always mean the decrease of the congestion and even with the small market penetration rate, it can also have an impact on the V2X environment. This result will be the foundation for the V2X environment much better.

• Textile Coloration and Finishing
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• v.6 no.2
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• pp.30-39
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• 1994

To study the printing behaviors of Polyester and cotton(P/C) fabrics printed with disperse and reactive dyes, the effects of alkalis on the fixation of reactive dyes and the alkali-stability of disperse dyes in various methods of fixation were examined. The anthraquinone disperse dyes which have diamino derivatives as substituents without hydroxy group, such as C.I. Disperse Violet 1(D.V.1), C.I. Disperse Violet 28(D.V.28) and C.I.Disperse Blue 60(D.B.60) showed good results of fixation without regard to the concentration of NaHCO$_3$. In case of high temperature steaming(HTS) and unsaturated steaming(US)/HTS, D.V. 1 was alkali-stable and effective for P/C printing. A good result was obtained with D.V.1 and C.I.Reactive Orange 13(R.O.13) paste of 4% $K_{2}CO_{3}$. It was found that the unfixed D.V.28 bearing chloro group can hinder the fixation of monochlorotriaxinyl reactive dyes, and D.B.60 made little stain on 100% cotton. In thermosol(Tm), the dye uptake of D.V.1 was not decreased so much, but those of D.V.28 and D.B.60 were greatly decreased.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.760-769
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• 2000

Mechanical properties of HSLA cast steels alloyed with 0.15% Nb, Ti or V were tested as variations of austenizing temperatures and tempering times. The test results are as follows. The hardness of HSLA cast steels austenized for 2hrs at 115$0^{\circ}C$ was shown the highest value regardless of alloying elements and then decreased as the temperature decreased below 110$0^{\circ}C$. The hardness of HSLA cast steels with 0.15% Ti austenized for 2 hrs at $1150^{\circ}C$ was higher than that of any other HSLA cast steels, and chich was mainly attributed to the relatively high amount of bainite, and solid solution hardening. Charpy impact energy of HSLA cast steels was comparable to the C-Mn cast steel except HSLA cast steels with 0.15% Ti austenized at 115$0^{\circ}C$. The hardness of HSLA cast steels austenized for 2 hrs at $1150^{\circ}C$ increased at a ten-minute tempering, and after that, the hardness kept almost sililar level except HSLA cast steels with 0.15% V.

• Korean journal of food and cookery science
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• v.11 no.2
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• pp.153-157
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• 1995

The effect of low concentrations of ethanol(3∼7%, v/v) in culture broth as an antibacteriaB agent against Vibrio parahaemolyticus was tested at -20, 5, 35, 45 and 5%. Increasing concentrations of ethanol progressively inhibited initial growth of t: parahaemelyticus at 35$^{\circ}C$. Growth occured at 5% ethanol, but only after a prolonged lag period. At 7% ethanol, the number of viable cells of V parahae-molyticus declined during incubation. Culture broth containiilg 3∼7% ethanol was inoculated with 106∼107'cells/uu of V Parahaemolyticus and incubated at low temperatures(5$^{\circ}C$, -20$^{\circ}C$) and high tem-peratures(45$^{\circ}C$, 50$^{\circ}C$). In the presence of 5 or 7ft of ethanol, the viability in the cells incubated at high temperatures decreased rapidly. Rate of death increased with increasing concentration of etha-nol.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.975-978
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• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.350-353
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• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.