• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.308-313
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• 2001

We report the effects of the V$_2$O$_{5}$ additive on the sintering behavior and microwave dielectric properties of ZnNb$_2$O$_{6}$ ceramics. Densification temperatures of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are lowered to the range of 875-9$25^{\circ}C$ because of the liquid phase sintering. Doped samples are composed of a Zn(Nb,V)$_2$O$_{6}$ solid solution and second phases. Up to 5 wt% V$_2$O$_{5}$ is the only second phase, however, V$_2$O$_{5}$ also exists as the second phase for 10 wt% V$_2$O$_{5}$ addition. In comparison with reported values of undoped ZnNb$_2$O$_{6}$ ceramics, microwave properties of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are seriously degraded, which is confirmed to originate from the second phases. The optimum microwave properties (Q$\times$f=13,800, $\varepsilon$$_{r}$=23, $\tau$$_{f}$=-66ppm/$^{\circ}C$) are obtained from ZnNb$_2$O$_{6}$ with the addition of 5 wt% V$_2$O$_{5}$ sintered at 90$0^{\circ}C$.90$0^{\circ}C$.EX>.

• Journal of Auto-vehicle Safety Association
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• v.15 no.4
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• pp.65-70
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• 2023

In the paper, we propose a design method and process of a hybrid V2X communication module that combines WAVE communication, LTE-V2X communication, and legacy LTE communication in evaluating vehicle V2X electromagnetic compatibility. C-ITS is suitable for safety service applications due to its low latency, and legacy LTE is suitable for applications such as traffic information and infotainment due to its high latency and high capacity. In order to evaluate the V2X communication system, the evaluation equipment must have communication performance of the same level or higher. The main design contents presented in this paper will be applied to the implementation of a hybrid V2X communication module for electromagnetic compatibility evaluation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.644-647
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• 2001

The investigations were discussed on the radiation effects of the electrical properties to the p-type MOS capacitors, which were irradiated by cobalt-60 gamma ray sources. The characteristics of capacitance-bias voltage(C-V) and of dielectric dissipation tarter-bias voltage(D-V) on the capacitors were measured at 1 [MHz] frequency. The microscopic behaviors of spate charges in oxide and silicon-silicon dioxide(Si- $SiO_2$) interface were investigated from the experimental data. The C-V characteristics are statical and convenient for the evaluation of the steady state behavior of carriers and interface states characteristics. While, the distribution and magnitude of space charges in oxide can be found out accurately on the $V_{dp}$ in D-V curves. The density of interface states can be deduced with ease from the magnitude of D-peak at depletion state. Thus, it is also concluded that the D-V curves are more useful and easier than conventional C-V curves for analysis of the microscopic and dynamic behavior of carriers in oxide and Si- $SiO_2$interface.

• Journal of Sensor Science and Technology
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• v.5 no.6
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• pp.60-67
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• 1996

The interfacial electrical properties of InSb MIS structure with low temperature remote PECVD $SiO_{2}$ have been characterized. The interlace-state density at mid-bandgap of the MIS structure was about $1{\sim}2{\times}10^{11}\;cm^{-2}eV^{-1}$, when the $SiO_{2}$ film was deposited at $105^{\circ}C$. However, large amount of interlace states and trap states were observed in the MIS structure fabricated at temperatures above $105^{\circ}C$. The time constant of $10^{-4}{\sim}10^{-5}\;sec$ of interface states was extracted from G- V measurement. As the deposition temperature increased, the hysteresis of C- V curves were increased due to the high trap density.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.123-126
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• 2002

Samples of Nb/Al-Al$O_{x}$/Nb tunnel junction with the size of 50$\mu$m $\times$ 50$\mu$m were fabricated by employing self-aligning and reactive ion etching technique. In the samples with high-quality, $V_{m}$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density $J_{c}$ = 500 A/$cm^{2}$ and $V_{g}$ value (the gap voltage) was 2.8 mV. In the higher $J_{c}$, voltage fluctuation in the current rising at the gap voltage was observed. The $V_{m}$ and $J_{c}$ value were 8 mV and 900 A/$cm^{2}$, respectively.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.230-234
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• 2002

Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed $LiNbO_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3$thin film. The dielectric constant of the $LiNbO_3$film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of $1{\times}10^{-8}\textrm{A/cm}^2$ order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about $10^{11}/cm^2$.eV. The typical measured remnant polarization(2Pr) value was about 1.2 $\mu\textrm{C/cm}^2$, in an applied electric field of $\pm$ 300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about $10^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.290-293
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• 2001

The SrBi$_2$Nb$_2$O$_{9}$ (SBN) thin films were deposited on p-type(100) Si substrates by rf magnetron sputtering to confirm the Possibility of Pt/SBN/Si structure for the application of nondestructive read out ferroelectric random access memory (NDRO- FRAM). The SBN thin films were deposited by co-sputtering method with Sr$_2$Nb$_2$O$_{7}$ (SNO) and Bi$_2$O$_3$ ceramic targets. The SBN thin films deposited at room temperature were annealed at $700^{\circ}C$ for 1hr in $O_2$ ambient. The structural and electrical properties of SBN with different power ratios of targets were measured by x-ray diffraction(XRD), scanning electron microscopy(SEM), capacitance-voltage(C-V), and current-voltage(I-V). The C-V curves of the SBN films showed hysteresis curves of a clockwise rotation showing ferroelectricity. When the Power ratio of the SNO/Bi$_2$O$_3$ targets was 120 W/100 W, the SBN thin films had excellent electrical properties. The memory window of SBN thin film was 1.8 V-6.3 V at applied voltage of 3 V-9 V and the leakage current density was 1.5 $\times$ 10$^{-7}$ A/$\textrm{cm}^2$ at applied voltage of 5 V The composition of SBN thin films was analysed by electron probe X-ray micro analyzer(EPMA) and the atomic ratio of Sr:Bi:Nb with pawer ratio of 120 W/100 W was 1:3:2.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1494-1502
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• 2013

Energy flow and C-$H_{methyl}$ and C-$H_{ring}$ bond dissociations in vibrationally excited toluene in the collision with $N_2$ and $O_2$ have been studied by use of classical trajectory procedures. The energy lost by the vibrationally excited toluene upon collision is not large and it increases slowly with increasing total vibrational energy content between 5,000 and 45,000 $cm^{-1}$. Intermolecular energy transfer occurs via both of V-T and V-V transfers. Both of V-T and V-V transfers increase as the total vibrational energy of toluene increases. When the total energy content $E_T$ of toluene is sufficiently high, either C-H bond can dissociate. The C-$H_{methyl}$ dissociation probability is higher than the C-$H_{ring}$ dissociation probability, and that in the collision with $N_2$ is larger than with $O_2$.

• Journal of the Korean Chemical Society
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• v.30 no.6
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• pp.532-537
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• 1986

The kinetics of the reaction of $[Mo_2O_4(H_2O)_6]^{2+}$ with $VO_2^+$ have been studied at $25^{\circ}C$ by spectrophotometric method. Stoichiometry of the oxidation of$ [Mo_2O_4(H_2O)_6]^{2+}$ is followed as $Mo_2^V + 2V^V {\rightleftharpoons} 2Mo^{VI} + 2V^{IV}$. Observed rate constants are dependent on $ [H^+]\;and\;[VO_2^+]$. Mechanism for the redox of $[Mo_2O_4(H_2O)_6]^{2+}\;and\;VO_2^+$ is proposed and discussed.

• Journal of Chest Surgery
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• v.17 no.2
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• pp.177-183
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• 1984

From July 1975 to March 1984, 16 patients of complex congenital cardiovascular anomalies associated with left superior vena cava were seen at Han-Yang University Hospital. The age of patients was ranged from 2 to 15 years-old. The distribution of Sex was 7 patients in male, 9 patients in female. Persistent Left Superior Vena Cava [L.S.V.C.] was classified according to the proximal connection of L.S.V.C. into 3 groups. Group I which L.S.V.C. connected to coronary venous sinus was in 9 patients, Group II which L.S.V.C. connected to Left atrium was in 5 patients, Group III which L.S.V.C. hemodynamically connected to right atrium was in 2 patients. Pathoanatomical findings of complex congenital cardiovascular anomalies associated with L.S.V.C. in 16 cases were generally show unsystematic irregularity. In group I, A.S.D. were only in 3 cases, but in highest incidence and in group III, all two cases were supracardiac type of total anomalous drainage of pulmonary veins. Post-operatively, 3 patients among 14 patients of total correction, were died immediately, 1 patient of palliative shunt operation was died after 2 and half years, and Follow-up results of other remaining patients were excellent.