• Title/Summary/Keyword: V2

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An Enhanced Greedy Message Forwarding Protocol for Increasing Reliability of Mobile Inter-Vehicle Communication (이동하는 차량 간 통신의 신뢰성 향상을 위한 개선된 탐욕 메시지 포워딩 프로토콜)

  • Ryu, Min-Woo;Cha, Si-Ho;Cho, Kuk-Hyun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.4
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    • pp.43-50
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    • 2010
  • Vehicle-to-Vehicle (V2V) is a special type of vehicle ad-hoc network (VANET), and known as a solution to provide communication among vehicles and reduce vehicle accidents. Geographical routing protocols as Greedy Perimeter Sateless Routing (GPSR) are very suitable for the V2V communication due to special characters of highway and device for vehicles. However, the GPSR has problem that appears local maximum by some stale neighbor nodes in the greedy mode of the GPSR. It can lose transmission data in recovery mode, even if the problem is can be solved by the recovery mode of the GPSR. We therefore propose a Greedy Perimeter Reliable Routing (GPRR), can provide more reliable data transmission, to resolve the GPSR problem in the V2V environment. Simulation results using ns-2 shown that the GPRR reveals much better performance than the GPSR by remarkably reducing the local maximum rate in the greedy mode.

Against the Asymmetric CP- V2 Analysis of Old English

  • Yoon, Hee-Cheol
    • Korean Journal of English Language and Linguistics
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    • v.4 no.2
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    • pp.117-149
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    • 2004
  • The paper is to argue against the asymmetric CP-V2 analysis of Old English, according to which finite verbs invariably undergo movement into a clause-final T within subordinate clauses and reach the functional head C within main clauses. The asymmetric CP-V2 analysis, first of all, faces difficulty in explaining a wide range of post-verbal elements within subordinate clauses. To resolve the problem, the analysis has to abandon the obligatoriness of V-to-T movement or introduce various types of extraposition whose status is dubious as a legitimate syntactic operation. Obligatory V-to-T movement in Old English lacks conceptual justification as well. Crosslinguistic evidence reveals that morphological richness in verbal inflection cannot entail overt verb movement. Moreover, the operation is always string-vacuous under the asymmetric CP- V2 analysis and has no effect at the interfaces, in violation of the principle of economy. The distribution of Old English finite verbs in main clauses also undermines the asymmetric CP-V2 analysis. Conceptually speaking, a proper syntactic trigger cannot be confirmed to motivate obligatory verb movement to C. The operation not only gets little support from nominative Case marking, the distribution of expletives, or complementizer agreement but also requires the unconvincing stipulation that expletives as well as sentence-initial subjects result from string-vacuous topicalization. Finally, textual evidence testifies that Old English sometimes permits non-V2 ordering patterns, many of which remain unexplained under the asymmetric CP-V2 analysis.

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Temperature-dependent photoluminescence properties of amorphous and crystalline V2O5 films (비정질과 결정질 V2O5 박막의 온도에 따른 발광특성)

  • Kang, Manil;Chu, Minwoo;Kim, Sok Won
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.5
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    • pp.202-206
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    • 2014
  • In order to investigate the photoluminescence (PL) properties of $V_2O_5$ films, amorphous and crystalline films were prepared by using RF sputtering system, and the PL spectra of the films were measured at the temperatures ranging from 300 K to 10 K. In the amorphous $V_2O_5$ film grown at room temperature, a PL peak centered at ~505 nm was only observed, and in the crystalline $V_2O_5$ film, two peaks centered at ~505 nm and ~695 nm, which is known to correspond to oxygen defects, were revealed. The position of PL peak centered at 505 nm for both the amorphous and crystalline $V_2O_5$ films showed a strong dependence on temperature, and the positions were 2.45 eV at 300 K and 2.35 eV at 10 K, respectively. The PL at 505 nm was due to the band energy transition in $V_2O_5$, and also, the reduction of the peak position energy with decreasing temperature was caused by a decrement of the lattice dilatation effect with reducing electron-phonon interaction.

Effect of V2O5 Addition on the Microstructure and Electrical Properties of Pb(In1/2Nb1/2)O3-PbTiO3 Ceramics (Pb(In1/2Nb1/2)O3-PbTiO3계의 미세구조와 전기적 물성에 미치는 V2O5 첨가의 영향)

  • 박현욱;이응상
    • Journal of the Korean Ceramic Society
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    • v.25 no.4
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    • pp.335-340
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    • 1988
  • The change in microstructure and the electrical properties of Pb(In1/2Nb1/2)O3-PbTiO3 Ceramics caused by V2O5 addition were studied. The results are ; 1. interability was increased because the mass transport through the second phase formed by V2O5 addition increased. 2. ith addition of V2O5, tetragonality and Curie temperature increased. The maximum value of kp was observed when 0.5wt% of V2O5 was added. 3. he second phase formed by V2O5 accelerated the grain growth, and existed in grain boundary. Electrical properties were changed by corelations between tetragonality and the amount of second phase.

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Growth and Yield Responses of Soybean to Overhead Flooding Duration at Four Growth Stages (관수시간에 따른 콩의 생육 및 수량반응)

  • 박경열;이종형;조영철
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.40 no.1
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    • pp.92-97
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    • 1995
  • The objective of this study is to investigate the growth characters of overhead flooded soybean plants at four growth stage. Overhead flooding treatments were applied at the vegetative growth stage ($V_3,\;V_6$) and the reproductive stage ($R_2,\;R_4$) for 6.12.24 hrs, respectively. Yield and yield components were more decreased as the overhead flooding duration was longer and the growth stage was later. Yield was not reduced significantly in soybean plants flooded at $V_3$ stage regardless of flooding duration, and flooded 6 or 12 hrs at $V_6$ stage. When compared to the control, 27 to 36% of yield reduction was observed in soybean plants flooded for 24 hrs at $V_6$ stage, 6 or 12 hrs at $R_2$ stage, and 6 hrs at $R_4$ stage. And 43%, 53% and 66% of yield were reduced through the flooding treatment for 24 hrs at $R_2$ stage 12 hrs and 24 hrs at $R_4$ stage, respectively. So yield reduction was higher in overhead flooded soybean plants at the reproductive stage than that at the vegetative growth stage.

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Isolation and Characterization of Antibiotic Resistant Vibrio Strains from Japanese Eel (Anguilla Japonica) Cultured in Korea (국내산 양식 뱀장어에서 항생제 내성 비브리오 세균 분리 및 특성)

  • Park, S.Y.;Kim, J.H.;Jun, J.W.
    • Journal of Practical Agriculture & Fisheries Research
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    • v.22 no.2
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    • pp.51-58
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    • 2020
  • Continuous mortality in commercially cultured Japanese eel (Anguilla japonica), showing symptoms of dermal ulcerations and focal hemorrhages on the body, occurred on a private farm in November, 2019 in Korea. A series of mortality had been described in one local eel culture farm from November to December in 2019. From the three cases, three isolates of Vibrio spp. were recovered from the blood, ascitic fluid, and kidney of the dead fish, respectively. Based on the 16S rRNA sequence comparisons, the Vibrio isolates from the 1st and 3rd cases (strain named 1E1-2 and 3K1-2) were identified as V. fluvialis and the isolate from the 2nd case was identified as V. plantisponsor (strain named 2A3-1). Moreover, the 16S rRNA-based phylogenetic analysis revealed that strain 1E1-2 and 3K1-2 were most similar to V. fluvialis NBRC 103150T, and strain 2A3-1 was most similar to V. plantisponsor NBRC103148T. According to the results of the antibiotic resistance determination, V. fluvialis 1E1-2 showed intermediate resistance to tetracycline and chloramphenicol, and was resistant to trimethoprim-sulfamethoxazole. V. plantisponsor 2A3-1 showed intermediate resistance to ciprofloxacin and levofloxacin, and was resistant to trimethoprim-sulfamethoxazole. V. fluvialis 3K1-2 showed intermediate resistance to tetracycline, and was resistant to ampicillin and trimethoprim-sulfamethoxazole. These results have provided the evidences on the occurrence of antibiotic-resistant Vibrio infection in commercially cultured Japanese eels are present in Korea.

SARS-CoV-2-Specific T Cell Responses in Patients with COVID-19 and Unexposed Individuals

  • Min-Seok Rha;A Reum Kim;Eui-Cheol Shin
    • IMMUNE NETWORK
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    • v.21 no.1
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    • pp.2.1-2.11
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    • 2021
  • Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) infection causes coronavirus disease 2019 (COVID-19), an ongoing pandemic disease. In the current review, we describe SARS-CoV-2-specific CD4+ and CD8+ T-cell responses in acute and convalescent COVID-19 patients. We also discuss the relationships between COVID-19 severity and SARS-CoV-2-specific T-cell responses and summarize recent reports regarding SARS-CoV-2-reactive T cells in SARS-CoV-2-unexposed individuals. These T cells may be cross-reactive cells primed by previous infection with human common-cold coronaviruses. Finally, we outline SARS-CoV-2-specific T-cell responses in the context of vaccination. A better understanding of SARS-CoV-2-specific T-cell responses is needed to develop effective vaccines and therapeutics.

Structural characterization of $LaTi_{0.8}V_{0.2}O_3$ compounds by transmission electron microscoy (투과전자현미경에 의한 $LaTi_{0.8}V_{0.2}O_3$ 화합물의 결정구조 분석)

  • 김좌연;윤의중;박경순;심규환;류선윤;김유혁
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.4
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    • pp.567-572
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    • 1998
  • The crystalline structure of $LaTi_{0.8}V_{0.2}O_3$ solid solutions, prepared by arc-melting palletized mixtures of predried $La_2O_3,\;V_2O_3,\;TiO_2$, and Ti, was investigated by transmission electron microscopy and computer image simulation. Computer image simulations were performed by the multislice method for a wide range of sample thickness and defocusing value. The structure of $LaTi_{0.8}V_{0.2}O_3$ was determined as a $GdFeO_3$-type orthorhombic $(a\approx5.58{\AA},\;b\approx7.89{\AA},\;and\;c\approx5.58{\AA})$ with a space group $P_{nma-}$. No evidence of ordering of Ti and V atoms in $SaTi_{0.8}V_{0.2}O_3$ was found.

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Effects of Vanadium Doping on Magnetic Properties of Inverse Spinel Fe3O4 Thin Films (역스피넬 Fe3O4 박막의 바나듐 도핑에 따르는 자기적 성질 변화)

  • Kim, Kwang-Joo;Choi, Seung-Li;Park, Young-Ran;Park, Jae-Yun
    • Journal of the Korean Magnetics Society
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    • v.16 no.1
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    • pp.18-22
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    • 2006
  • Effects of V substitution of Fe on the magnetic properties of $Fe_3O_4$ have been investigated by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), conversion electron Mossbauer spectroscopy (CEMS), and vibrating sample magnetometry (VSM) measurements on sol-gel-grown films. XRD data indicates that the $V_xFe_{3-x}O_4$ films maintain cubic structure up to x=1.0 with little change of the lattice constant. Analyses on V 2p and Fe 2p levels of the XPS data indicate that V exist as $V^{3+}$ mostly in the $V_xFe_{3-x}O_4$ films with the density of $V^{2+}$ ions increasing with increasing V content. Analyses on the CEMS data indicate that $V^{3+}$ ions substitute tetrahedral $Fe^{3+}$ sites mostly, while $V^{2+}$ ions octahedral $Fe^{2+}$ sites. Results of room-temperature VSM measurements on the films reveal that the saturation magnetization for the x=0.14 sample is larger than that of $Fe_3O_4$, while it becomes smaller than that of $Fe_3O_4$ for $x{\geq}0.5$. The coercivity of the $V_xFe_{3-x}O_4$ films is found to increase with x, attributed to the increase of anisotropy by the substitution of $V^{2+}(d^3)$ ions into the octahedral sites.

Variation of Threshold Voltage by Programming Voltage Change of a Flash Memory Device with Ge-MONOS (Ge-MONOS 구조를 가진 플레쉬 메모리 소자의 프로그래밍 전압에 따른 문턱 전압 관찰)

  • Oh, Jong Hyuck;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2019.05a
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    • pp.323-324
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    • 2019
  • For flash memory devices with Ge-MONOS(metal-Oxide-Nitride-Oxide-Silicon) structures, variations of threshold voltage with programming voltage were investigated. The programming voltage was observed in steps of 1V from 10V to 17V and programmed for 1 second. The threshold voltage from 10V to 14V was about 0.5V, which is not much different from that before programing, and the threshold voltages at 15V, 16V and 17V were 1.25V, 2.01V and 3.84V, respectively, which differed 0.75V, 1.49V and 3.44V from that before programing.

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