• 한국초전도ㆍ저온공학회논문지
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• 제22권4호
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• pp.31-39
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• 2020

Power cables made of high temperature superconductors (HTS) are considered as most advanced applications of superconductivity for electro-energetics. Several cables made of the First Generation (1G) HTS wires have been produced and installed to electrical grids worldwide. Power cables made of the Second Generation HTS wires (2G or Coated Conductors) are in active development. Most basic principles of HTS power cables development have been published in many works since 90-ties. In this Review we would like to present our new developments mostly directed to 2G HTS compact power cables. We are presenting the methods to optimize a design of 2G AC compact power cable providing uniform current distribution among cable layers and the production technology approaches to implement such a design. AC losses measurements in such cables and other test methods are described. Some problems of the development 2G HTS power cables with small diameters are discussed. We presented as examples designs, developments and test results of two major coaxial cables designs: single-phase (cable core and a shield) and three-phase (triaxial: with three coaxial phases).

• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 1996년도 가을 학술발표회 논문집
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• pp.283-289
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• 1996

In this paper, the mix design of the super flowing concrete is described with respcet to basic concept, confined water ratio($\beta_p$), volume ratio of water-binder(w/b), volume ratio of fine aggregates($S_r$) and coarse aggregates($G_v$). The primary purposes of this study are to evaluate the effects of cementitious materials(fly ash, slag cement, portland cement), mixing factors ($\beta_p$, w/b, $S_r$, $G_v$)., and to propose the mix design method of the super flowing concrete. As results of this study, confined water ratio($\beta_p$) of cementitious materials is very high (0.99~1.1), and then the ranges of the optimum mixing factors to be satisfied with the super flowing concrete are $S_r$ 47$\ell$ 2%, $G_v$ 52$\ell$ 1%.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.152-158
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• 1996

Optical absorption and photoconductivity spectra of undoped and Co-doped Cd$_{4}$GeSe$_{6}$ single crystals, grown by the chemical transport reaction using iodine as a transporting agent, were investigated. At 20K, the optical energy gaps of the single crystals are 1.934eV for Cd$_{4}$GeSe$_{6}$ and 1.815eV for Cd$_{4}$GeSe$_{6}$ :Co$^{2+}$. The photoconductivity spectra of these single crystals were closely investigated over the temperature range 20-290K. At 20K, the photoconductivity peaks were located at 1.797eV, 1.347eV for Cd$_{4}$GeSe$_{6}$ and 1.815eV, I,.57eV, 1.46eV and 1.38eV for Cd$_{4}$GeSe$_{6}$ :Co$^{2+}$, respectively.ely.

• 열처리공학회지
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• 제13권6호
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• pp.398-404
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• 2000

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

• 대한수학회보
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• 제24권1호
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• pp.23-26
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• 1987

The aim of this note is to study some properties of Schrodinger operators, the magnetic case, $H_{0}$ (a)=1/2(-i.del.-a)$^{2}$; H(a)= $H_{0}$ (a)+V, where a=( $a_{1}$,.., $a_{n}$ ).mem. $L^{2}$$_{loc}$ and V is a potential energy. Also, we are interested in solutions, .psi., of H(a).psi.=E.psi. in the sense that (.psi., $e^{-tH}$(a).PSI.)= $e^{-tE}$(.psi.,.PSI.) for all .PSI..mem. $C_{0}$ $^{\infty}$( $R^{n}$ ) (see B. Simon [1]). In section 2, under some conditions, we find that a semibounded quadratic form of H9a) exists and that the Schrodinger operator H(a) with Re V.geq.0 is accretive on a form domain Q( $H_{0}$ (a)). But, it is well-known that the Schrodinger operator H=1/2.DELTA.+V with Re V.geq.0 is accretive on $C_{0}$ $^{\infty}$( $R^{n}$ ) in N Okazawa [4]. In section 3, we want to discuss $L^{p}$ estimates of Schrodinger semigroups.ups.

• 공업화학
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• 제29권6호
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• pp.696-702
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• 2018

최근 열전지는 우주 및 국방분야에서 활용하기 위하여 고출력 및 고에너지 밀도의 새로운 전극재료가 요구되는 실정이다. 본 논문에서는 성형성과 용량의 한계를 가지는 펠릿 타입의 리튬-실리콘 합금(Li(Si)) 음극을 대체하기 위하여 고밀도를 가지는 리튬음극을 제조하고, 단위전지 및 열전지의 전기화학적 성능에 미치는 영향을 고찰하였다. 리튬음극은 $500^{\circ}C$에서 안정적인 작동을 위하여 철 분말을 바인더로 사용하였고 리튬 중량별(17, 15, 13 wt%) 단위전지 성능평가를 통해 리튬 13 wt%에서 안정적인 성능을 확인하였다. 또한 리튬음극을 사용한 단위전지의 개회로전압이 2.06 V로 Li(Si) 음극 개회로전압 1.93 V에 비해 약 0.1 V 이상 높게 나타났고, first phase에서 리튬음극의 비용량은 $1,632As{\cdot}g^{-1}$로 Li(Si) 음극의 비용량 $1,181As{\cdot}g^{-1}$에 비해 약 1.4배 정도 성능이 향상됨을 확인하였다. 리튬음극을 적용한 열전지를 상온 및 고온 성능시험 결과를 통하여 Li(Si) 음극 열전지에 비해 전압 및 작동시간 등이 탁월하며, 출력특성 및 에너지밀도가 획기적으로 향상됨을 확인하였다.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.780-786
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• 1995

For the execution of RIETAN program adopting Rietveld Analysis Method, the sample superconductor is made according to the solid state synthesis method at 920.deg. C for 24hrs, and was examined for the optimization of parameters needed to analyze Rietveld method with the input of the measured pattern data after measuring the pattern resulted from the X-ray diffraction. It was proven that the lattice constant of the superconductor which was consisted of Pmmm orthorhombic crystal structure in the analyzed space group correspond to the presented theoretical lattice constant a=3.8887(8).angs., b=3.8238(4).angs., c=11.7079.angs.. Therefore, it was examined and confin-ned that the R factor, which was compensated after analyzing the structure of superconductor resulted from this experimented data with the computer simulation, was refined to $R_{wp}$=8.83[%], $R_{P}$=6.47[%], $R_{I}$=10.08[%], $R_{F}$=7.19[%], $R_{E}$=3.76[%]. On the basis of these experimental data, the significant parameter such as the scale factor(S) and the zero point shift(Z) and FWHM value(U,V,W) were optimized as follows; S=2.0827E-3, Z=0.2146, U=4.2761E-2, V=1.7983E-2, and W=2.6768E-2.2.2.2.2.2.

• 한국미생물·생명공학회지
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• 제27권1호
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• pp.54-61
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• 1999

Measurement of inhibition of bioluminescence in Photobacterium phosphoreum has been porposed as a sensitive and rapid procedure to monitor toxic substances. However, at first, $EC_{50}$ which shows degree of toxicity to each toxic substances must be calculated. QSAR (Quantitative Structure Activity Relationship) model can be used to estimate $EC_{50}$ to save time and endeavor. Moderately high correlation coefficients ($r^2{\geq}$ 0.97) were calculated from the linear correlation between $EC_{50}$ and molecular connectivity indices of CAHs (chlorinated aliphatic hydrocarbons)such as $^0X$, $^0X^V$, $^1X$, $^2X$ and $^3X^v_c$ and quadratic correlation between $EC_{50}$ and $^0X$, $^0X^V$, $^2X^V$, $^3X_c$, $^3X^V_c$ and P. It shows that the molecular connection indices in carbon structure is contributed to biological characters with linear relation and that in the other one with quadratic relation. The $EC_{50}$ of chlorophenol derivatives had quadratic relation with the value of octanol/water prtition coefficients ($r^2$=0.99) and linear and quadratic relation with the number of chlorine compound (($r^2{\geq}$0.94). This confirms the already known trend of increasing toxicity with increasing ability of a compound to diffuse through cell membrane and number of chlorine substitution.

• 대한치과보철학회지
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• 제43권2호
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• pp.176-190
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• 2005

Statement of problem. The current trend in prosthodontics is the adoption of a conservative approach to preparing dental prostheses by minimizing the amount of sound tooth structure removal during preparation. Purpose. The major disadvantage of the adhesion bridge is the inherently poor resistance to dislodgement that its use in areas subjected to high occlusal load is limited. The purpose of this study was to compare the dislodgement resistance of $Bio-pin^{(R)}$, conventional 3-unit and adhesion bridges. Material and methods. The experimental groups were classified as follows : Group I : 3-unit bridge cemented using $Super-Bond^{(R)}$ C&B Group II : Adhesion bridge cemented using $Super-Bond^{(R)}$ C&B Group III : $Bio-pin^{(R)}$ design adhesion bridge without incorporation of $Bio-pin^{(R)}$ (cemented using $Super-Bond^{(R)}$ C&B) Group IV-1 : $Bio-pin^{(R)}$ retained adhesion bridge incorporating a single $Bio-pin^{(R)}$ (cemented using $Super-Bond^{(R)}$ C&B) Group IV-2 : $Bio-pin^{(R)}$ retained adhesion bridge incorporating a single $Bio-pin^{(R)}$ (cemented using $Panavia^{(R)}$ F) Group V : $Bio-pin^{(R)}$ retained adhesion bridge incorporating two $Bio-pins^{(R)}$ (cemented using $Super-Bond^{(R)}$ C&B) Results. The results of this study were as follows : 1. Significant differences in dislodgement resistance of the restorations were found between Group I, Group II and Group III (p<0.05). No significant differences in dislodgement resistance of the restorations were observed between Group I Group IV-1 and Group V. However, there were significant differences in dislodgement resistance between Group II and the other groups (p<0.05). 2. No significant differences in dislodgement resistance of the restorations were observed between GroupIV-1 and GroupIV-2, both of which utilized a single $Bio-pin^{(R)}$. However, significant differences were observed when Group III was compared to either GroupIV-1 or Group V (p<0.05). 3. No significant differences in dislodgement resistance relative to the type of dental cements used were found. Conclusion. From the above results, it is concluded that the dislodgement resistance of $Bio-pin^{(R)}$ bridge restorations utilizing a single $Bio-pin^{(R)}$ is similar to that of a conventional 3-unit bridge. The results also suggest that $Bio-pin^{(R)}$ bridge restorations using a single $Bio-pin^{(R)}$ are a viable alternative to the conventional 3-unit bridge when minimal removal of sound tooth structure and fulfillment of both function and esthetic aspects are considered.

• 한국재료학회지
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• 제12권6호
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.