• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.335-338
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• 2000

Carbon is an attractive candidate for use in eletrochemical supercapacitors that depend on charge storage in the electrode/electrolyte international double layer. Property of an electrical double layer capacitor depend both on the technique used to prepare the electrode and on the current collector structure. The study is to research that V$_2$O$_{5}$-flyash-AC composite electrode for supercapacitor. The discharge capacitance of V$_2$O$_{5}$-flyash-AC(70wt%) in 1st and 50th cycle was 18.6F/g and 15.13F/g at current density of 0.5mA/cm$^2$. The discharge process of V$_2$O$_{5}$-flyash (3 : 97)-AC composite electrode is larger than that others.thers.

• Journal of IKEEE
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• v.27 no.4
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• pp.399-404
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• 2023

In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flash memory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by a ferroelectric. In the O/N/O structure, when V_read is applied, a current path is formed on the backside of the channel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formed on the front side due to the polarization of the ferroelectric material, causing electrons to move toward the channel front. Additionally, we performed an examination of device characteristics considering channel thickness and channel length. The analysis results showed that the front electron current density in the O/N/F structure increased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/F structure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structure than in the O/N/O structure.

• Journal of Plant Biology
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• v.29 no.1
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• pp.53-65
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• 1986

The montane forests of Ulreung Island, Korea, were investigated by the ZM school method. By comparing the montane forests of this island with those of Korean Peninsula and of Japan, a new order, F a g e t a l i a m u l t i n e r v i s, a new alliance, F a l g i o n m u l t i n e r v i s, a new association, H e p a t i c o-F a g e t u m m u l t i n e r v i s and Rhododendron brachycarpum-Pinus parviflora community were recognized. The H e p a t i c o - F a g e t u m m u l t i n e r v i s was further subdivided into four subassociations; Subass. of Sasa kurilensis, Subass. of Rumohra standishii, Subass. of Rhododendron brachycarpum and Subass. of typicum. Each community was described in terms of floristic, structural and environmental features.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.1-4
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• 1994

In this study. the microwave dielectric properties, such at dielectric constant(${\varepsilon}_{\gamma}$), unloaded quality factor multiplied with resonant frequency($Q_{u}$.f), and temperature coefficient of resonant frequency(${\tau}_{f}$), were investigated for the low-temperature sintered (Pb, Ca)$ZrO_3$ with $V_2O_{5}$ additives as well as structural properties. As a result, (Pb,Ca)ZrO$_3$ with 0.2 wt% $V_2O_{5}$ additive, sintered at $1200^{\circ}C$, showed good properties like ${\varepsilon}_{\gamma}$ 109, $Q_{u}$.f 2736 GHz, and ${\tau}_{f}$ -2.94 ppm/$^{\circ}C$. Especially ${\tau}_{f}$ was much better than ($Pb_{0.63}Ca_{0.37}$)$ZrO_3$ of which ${\tau}_{f}$ was known to be + 13.4 ppm/$^{\circ}C$, so it seems to be applicated in micorowave device components.

• Nuclear Medicine and Molecular Imaging
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• v.40 no.4
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• pp.228-232
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• 2006

Purpose: electrophilic $^{18}F(T_{1/2}=110\;min)$ radionuclide in the form of $[^{18}F]F_2$ gas is of great significance for labeling radiopharmaceuticals for positron omission tomography (PET). However, its production In high yield and with high specific radioactivity is still a challenge to overcome several problems on targetry. The aim of the present study was to develop a method suitable for the routine production of $[^{18}F]F_2$ for the electrophilic substitution reaction. Materials and Methods: The target was designed water-cooled aluminum target chamber system with a conical bore shape. Production of the elemental fluorine was carried out via the $^{18}O(p,n)^{18}F$ reaction using a two-step irradiation protocol. In the first irradiation, the target filled with highly enriched $^{18}O_2$ was irradiated with protons for $^{18}F$ production, which were adsorbed on the inner surface of target body. In the second irradiation, the mixed gas ($1%[^{19}F]F_2/Ar$) was leaded into the target chamber, fellowing a short irradiation of proton for isotopic exchange between the carrier-fluorine and the radiofluorine absorbed in the target chamber. Optimization of production was performed as the function of irradiation time, the beam current and $^{18}O_2$ loading pressure. Results: Production runs was performed under the following optimum conditions: The 1st irradiation for the nuclear reaction (15.0 bar of 97% enriched $^{18}O_2$, 13.2 MeV protons, 30 ${\mu}A$, 60-90 min irradiation), the recovery of enriched oxygen via cryogenic pumping; The 2nd irradiation for the recovery of absorbed radiofluorine (12.0 bar of 1% $[^{19}F]fluorine/argon$ gas, 13.2 MeV protons, 30 ${\mu}A$, 20-30 min irradiation) the recovery of $[^{18}F]fluorine$ for synthesis. The yield of $[^{18}F]fluorine$ at EOB (end of bombardment) was achieved around $34{\pm}6.0$ GBq (n>10). Conclusion: The production of $^{18}F$ electrophilic agent via $^{18}O(p,n)^{18}F$ reaction was much under investigation. Especially, an aluminum gas target was very advantageous for routine production of $[^{18}F]fluorine$. These results suggest the possibility to use $[^{18}F]F_2$ gas as a electrophilic substitution agent.

• New & Renewable Energy
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• v.2 no.3
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.277-281
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• 2003

Effects of $CaF_2$ addition as a filler on the high frequency dielectric properties and sintering of CaO-$Al_2O_3-SiO_2-B_2O_3$(CASB) and ZnO-MgO-$B_2O_3-SiO_2$(ZMBS) glass composites were investigated. The optimal glass composition in the CASB system was 33.0CaO-$17.0Al_2O_3-35.0SiO_2-15.0B_O_3$(in wt%). The corresponding dielectric properties were k=8.1 and $Q{\times}fo$=1,200GHz. The sintering temperature was $800{\mu}m$. In case of 2MBS system, 25.0ZnO-25.0MgO-20.0$B_2O_3-30.0SiO_2$(in wt%) glass showed k=6.8 and $Q{\times}fo$=5,200GHz when it was sintered at $750^{\circ}C$. The maximum amount of $CaF_2$ in the CASB and 2MBS glass system without any detrimental effect on the sintering was 25.0 v/o and 15.0 v/o, respectively. The addition of $CaF_2$ in the glass systems improved the high frequency dielectric properties. In case of CASB+$CaF_2$ composite, k was 7.1 and $Q{\times}fo$ was 2,300GHz. And in case of 2MBS+$CaF_2$ composite, k was 5.9 and $Q{\times}fo$ was 8,100GHz. $CaF_2$ addition also reduced sintering temperature. Effects of $CaF_2$ on the dielectric and sintering properties was analyzed in terms of viscosity and crystallization behavior changes due to the interaction between $CaF_2$ and the glass systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.300-301
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• 2007

$Mg_4(Nb_{2-x}V_x)O_9$ (MNV) ceramics have been prepared by a hydrothermal method. Low-temperature sintering of $Mg_4(Nb_{2-x}V_x)O_9$ (MNV) by V substitution for Nb was discussed in this study. A $Q{\cdot}f_0$ value of 103,297 GHz with a ${\varepsilon}_r$ of 12.56 and a ${\tau}_f$ of $-10.53\;ppm/^{\circ}C$ was obtained when x=0.0625 after sintering at $1100^{\circ}C$ for 5 h.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.145-148
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• 1998

Fluoride({{{{ { CaF}_{2 } }}}}) films exhibited a cubic structure with similar lattice constant to that of Si and have sufficient breakdown electric field as gate dielectric material. Therefore, {{{{ { CaF}_{2 } }}}} are expected to replace conventional insulator such {{{{ { SiO}_{ 2},{Ta}_{2}{O}_{ 2} and{Al}_{2}{O}_{5}. However, {CaF}_{2}}}}} films showed hystereisis properties due to mobile charges in the film. To solve this problem we performed thermal treatment and achieves field. C-v results indicate a reduced hystereisis window of {{{{ }}}}ΔV =0.2v, LOW INTERFACE STATE {{{{{D}_{it}=2.0 TIMES {10}^{11}{cm}^{-1}{eV}^{-1}}}}} in midgap, and good WIS diode properties. We observed a preferential crystallization of(200) plane from XRD analysis. RTA treatment effects on various material properties of {{{{{CaF}_{2}}}}} are presented in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.561-565
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• 2002

The effects of sintering additives such as $Bi_2O_3$ and $V_2O_5$ on the microwave dielectric and sintering properties of (Zn, Mg)$TiO_3$ system were investigated. Highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature range of $870{\sim}900^{\circ}C$ with $Bi_2O_3$ and $V_2O_5$ additions of <1wt.%, respectively. The microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ with 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$ sintered at $900^{\circ}C$ were as follows: $Q{\times}f_o$=56,800 GHz, ${\varepsilon}_r$=22, and ${\tau}_f=-53ppm/^{\circ}C$. In order to improve temperature coefficient of resonant frequency, $TiO_2$ was added to the above system. The optimum amount of $TiO_2$ was 15 mol.% when sintered at $870^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 32,800 GHz, ${\varepsilon}_r$ = 26, and $\tau_f=0ppm/^{\circ}C$.