• Journal of the Korean Chemical Society
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• v.17 no.6
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• pp.428-433
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• 1973

The quantitative separations of a mixture containing equal amount of each anion such as Si(IV), As(V), P(V), S(VI), W(VI) and Cr(VI) are carried out by the elution through 20${\times}3.14cm^2$ column of anion exchange resin, Dowex 1${\times}$8. The eluents are a mixture of 0.07 M hydrochloric acid and 0.03 M sodium chloride (pH = 1.30) for Si(IV), As(V) and P(V) species, a mixture of 0.6 M sodium chloride and 0.3 M sodium hydroxide for S(VI), W(VI) and Cr(VI) species, and 0.1 N sodium sulfite (pH = 3.48) for P(V) and As(V) species. The subsidiary anions in a standard mixture such as Si(IV), As(V), S(VI), P(V) and W(VI) are separated together from large amount of Fe(III) by the elution through 30cm${\times}3.14cm^2$ column of the resin, Dowex${\times}$50w${\times}$12, using a mixture of 0.1 M sodium nitrate and 2 percent dimethylsulfoxide aqueous solution as an eluent. Si(IV), As(V), S(VI), P(V) and W(VI) eluted together are separated quantitatively under the same conditions as in the separations of the anion mixture. By the conditions obtained in the separations of the standard mixture, Fe(III) and all of the subsidiary anions in steel are quantitatively separated.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.2
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• pp.199-208
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• 2003

Continuously variable transmission (CVT) mechanisms considered here combine the functions of a K-H-V type differential gear unit and a V-belt type continuously variable unit (CVU). As combining the functions of a K-H-V type differential gear unit and a V-belt type CVU, 24 different mechanisms are presented. Some useful theoretical formula related to speed ratio, power flow and efficiency are derived and analyzed. These mechanisms have many advantages which are the decrease of CVT size, the increase of overall efficiency, the extension of speed ratio range, and the generation of geared neutral.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.54-61
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• 2001

A fully on-chip open-drain CMOS output driver was designed for high bandwidth DRAMs, such that its output voltage swing was insensitive to the variations of temperature and supply voltage. An auto refresh signal was used to update the contents of the current control register, which determined the transistors to be turned-on among the six binary-weighted transistors of an output driver. Because the auto refresh signal is available in DRAM chips, the output driver of this work does not require any external signals to update the current control register. During the time interval while the update is in progress, a negative feedback loop is formed to maintain the low level output voltage ($V_OL$) to be equal to the reference voltage ($V_{OL.ref}$) which is generated by a low-voltage bandgap reference circuit. Test results showed the successful operation at the data rate up to 1Gb/s. The worst-case variations of $V_{OL.ref}$ and $V_OL$ of the proposed output driver were measured to be 2.5% and 7.5% respectively within a temperature range of $20^{\circ}C$ to $90^{\circ}C$ and a supply voltage range of 2.25V to 2.75V, while the worst-case variation of $V_OL$ of the conventional output driver was measured to be 24% at the same temperature and supply voltage ranges.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.91-92
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• 2006

The electrical properties of viologen derivatives were studied in terms of the tunneling current characteristics on the length of the viologen derivatives using self-assembling techniques and ultra high vacuum scanning tunneling microscopy (UHV-STM). We fabricated the Au substrate were deposited by thermal evaporation system ($420^{\circ}C$. Self-assembled monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto freshly cleaved, heated mica. The Au substrate was exposed to a 1 mM solution of viologen derivatives in ethanol for 24 hours to form a monolayer. We measurement of the morphology on the single viologen molecules ($VC_{8}SH$, $VC_{10}SH$, $HSC_{8}VC_{8}SH$, and $HSC_{10}VC_{10}SH$). The current-voltage (I-V) and differential conductance (dl/dV-V) properties were measured while the electrical properties of the formed monolayer were scanned by using a STS. The effective barrier height of viologen derivatives ($VC_{8}SH$, $VC_{10}SH$, $HSC_{8}VC_{8}SH$, and $HSC_{10}VC_{10}SH$) were calculated to be 1.076 eV, 1.56 ${\pm}$ 0.3 eV, 1.85 eV, 2.28 eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.177-180
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• 2020

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, V_th, V_ce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

• The Korean Journal of Mycology
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• v.39 no.1
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• pp.11-15
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• 2011

To provide basic information for Verticillium spp., molecular methods were applied to analyze genetic characteristics within Verticillium spp. including Verticillium dahliae, isolated from diseased plants in two regions of Korea. Five Korean isolates of V. dahliae causing Verticillium wilt on chrysanthemum were analyzed, together with six other Verticillium spp., using mitochondrial small subunit rRNA gene (rns) sequence and random-amplified polymorphic DNA (RAPD). In a phylogenetic tree based on rns region sequences, Korean V. dahliae isolates formed a single clade with foreign isolates, whereas the other Verticillium spp. formed separate groups. In addition to rns sequence analysis, a dendrogram based on RAPD fragment patterns also showed clustering of all V. dahliae isolates into one group, separate from the six different Verticillium spp., and the V. dahliae isolates formed three subgroups which corresponded to the regions of origin, Kumi, Busan city and Canada. This indicates that high genetic variation exists between regions, although the fungus was isolated from the same host plant, chrysanthemum. These results provide the foundation for the study of genetic diversity and relationships among V. dahliae isolates in Korea.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.8
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• pp.1184-1191
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• 2013

Probability of ignition due to arc-fault and energy of the arc-fault for the case of applying serial arc-fault interruption time of 120 V defined in UL 1699 to the voltage of 220 V of domestic condition and also for the case of applying it to the HIV wire type are analyzed. It has been confirmed that when the arc-fault occurs under 5 A, 10 A, and 20 A. Probability of ignition for the three different current conditions is 0.74(74%), 0.48(48%), and 0.32(32%) respectively for respective interruption time within 1 sec, 0.4 sec, and 0.2 sec. We discover that when we apply the same arc interruption time for 120 V defined in UL 1699 to the domestic environment of 220 V. The probability of ignition increases from 1.5% for 120 V condition to as much as 74% for 220 V condition. Conclusively, if we apply the standard for the serial arc-fault interruption time defined in UL 1699 for 120 V to the domestic condition of 220 V, the fire prevention effect of electric fire due to arc-fault equal to that of UL standard of 120 V can not be achieved.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• Microbiology and Biotechnology Letters
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• v.42 no.3
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• pp.238-248
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• 2014

The metalloid arsenic (Z = 33) is considered to be a significant potential threat to human health due to its ubiquity and toxicity, even in rural regions. In this study a rural region contaminated with arsenic, located at longitude $85^{\circ}$ 32'E and latitude $25^{\circ}$ 11'N, was initially examined. Arsenic tolerant bacteria from the rhizosphere of Amaranthas viridis were found and identified as Bacillus licheniformis through 16S rRNA gene sequencing. The potential for the uptake and removal of arsenic at 3, 6 and 9 mM [As(V)], and 2, 4 and 6 mM [As(III)], and for the reduction of the above concentrations of As(V) to As(III) by the Bacillus licheniformis were then assessed. The minimal inhibitory concentrations (MIC) for As(V) and As(III) was determined to be 10 and 7 mM, respectively. At 3 mM 100% As(V) was uptaken by the bacteria with the liberation of 42% As(III) into the medium, whereas at 6 mM As(V), 76% AS(V) was removed from the media and 56% was reduced to As(III). At 2 mM As(III), the bacteria consumed 100%, whereas at 6 mM, the As(III) consumption was only 40%. The role of pH was significant for the speciation, availability and toxicity of the arsenic, which was measured as the variation in growth, uptake and content of cell protein. Both As(V) and As(III) were most toxic at around a neutral pH, whereas both acidic and basic pH favored growth, but at variable levels. Contrary to many reports, the total cell protein content in the bacteria was enhanced by both As(V) and As(III) stress.

• Journal of the Korean Mathematical Society
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• v.45 no.5
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• pp.1405-1416
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• 2008

Let D be an integral domain, X an indeterminate over D, $N_v = \{f{\in}D[X]|(A_f)_v=D\}.$. Among other things, we introduce the concept of t-locally PVDs and prove that $D[X]N_v$ is a locally PVD if and only if D is a t-locally PVD and a UMT-domain, if and only if D[X] is a t-locally PVD, if and only if each overring of $D[X]N_v$ is a locally PVD.