• Progress in Superconductivity and Cryogenics
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• v.10 no.3
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• pp.32-35
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• 2008

A common problem in many fields of cryogenic power engineering is applying high voltage to cold parts of superconducting apparatus. In many cases, a bushing provides electrical insulation for the conductor which makes the transition from ambient temperature to the cold environment. The 60 kV class cryogenic high voltage bushing for neutral line of the 154 kV / 100MVA high temperature superconducting (HTS) transformer was described. The bushing is energized with the line-to-ground voltage between the coaxial center and outer surrounding conductors; in the axial direction, there was a temperature difference from ambient to about 77 K. For the insulation design of cryogenic bushing, electrical insulation characteristics of the GFRP were discussed in this paper.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.221-225
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• 2003

The MFIS-FET(Field Effect Transistor) devices using $BLT/Y_2O_3$ buffer layer on p-Si(100) substrates were fabricated by the Sol-Gel method and conventional memory processes. The crystal structure, morphologies and electrical properties of prepared devices were investigated by using various measuring techniques. From the C-V(capacitance-voltage) data at 5V, the memory window voltage of the $Pt/BLT/Y_2O_3/si$ structure decreased from 1.4V to 0.6V with increasing the annealing temperature from $700^{\circ}C\;to\;750^{\circ}C$. The drain current (Ic) as a function of gate voltages $(V_G)$ for the $MFIS(Pt/BLT/Y_2O_3/Si(100))-FET$ devices at gate voltages $(V_G)$ of 3V, 4V and 5V, the memory window voltages increased from 0.3V to 0.8V as $V_G$ increased from 3V to 5V.

• Proceedings of the KIEE Conference
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• summer
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• pp.1172-1175
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• 2004

포항 방사광 가속기의 선형가속기는 2.5GeV 전자빔용 마이크로웨이브의 발생을 위하여 80 MW급 클라이스트론(klystron) 11대와 입사부용 65 MW 급 클라이스트론 1대를 사용한다. 80 MW 급 클라이스트론 부하를 구동하기 위하여 최대 펄스 정격출력 200MW(400kV, 500A, 평탄도 $4.4\;{\mu}s$)인 대출력 펄스 전원공급 장치(modulator)가 요구된다. 모듈레이터 시스템 용 PFN(pulse forming network) 커패시터의 충전용 입력전원으로써 최대 출력전압 50 kV, ${\pm}\;0.5\%$ 이내의 전압제어가 가능한 고전압 인버터 전원장치를 적용하여 PLS 선형가속기용 국산화 개발 클라이스트론 부하의 성능시험을 수행하였다. 국산화 개발된 S-band 펄스 클라이스트론은 고전압 길들이기 과정을 거쳐 최대 정격 출력 빔 전압 400 kV 이상까지 시험 완료하였다. 클라이스트론의 정확한 RF 출력성능의 측정을 위하여 방향성 결합기와 검파기를 설치하여 측정시스템의 성능을 개선하였다. 본 논문에서는 포항 방사광 가속기의 국산화 개발 1호 클라이스트론 부하의 성능시험을 위한 50 kV 급 인버터시스템 적용과정에서 수행하였던 시험장치 개선과 PFN의 충전 특성을 분석하였다. 또한, 클라이스트론의 고전압 및 RF 길들이기 시험 결과에 관하여 고찰하고자 한다.

• Journal of Advanced Marine Engineering and Technology
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• v.41 no.2
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• pp.140-145
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• 2017

Newly designed vapor-injection heat pumps have been proposed and analyzed in the present study. An economizer-type vapor-injection (V-I) system has been employed as the standard system because of its reliability and simple control method. The V-I system has a re-cooler and re-heater for cooling and heating, respectively. Solar panels have been installed in the V-I heat pump as well as in the re-heater in order to enhance heating capacity and performance. R410A has been employed as a working fluid and performance analysis has been conducted under various conditions. Results are summarized as follows: (1) The V-I system with the re-cooler yielded a marginally higher coefficient of performance (COP) than the conventional V-I refrigeration system. (2) By increasing the re-cooler cooling capacity, enhanced system performance as compared to the conventional V-I system was observed. (3) The re-heater negatively affected the system performance; hence, the V-I heat pump with the re-heater yielded a lower COP than that of the conventional V-I heat pump used for heating. (4) Although the solar panels increased the system performance, this increase could not offset performance degradation by the re-heater.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.2
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• pp.87-97
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• 2013

Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) are critical circuit reliability issues in highly scaled CMOS technologies. In this paper, we analyze the impacts of NBTI and PBTI on SRAM $V_{MIN}$, and present a design solution for mitigating the impact of NBTI and PBTI on SRAM $V_{MIN}$. Two different types of SRAM $V_{MIN}$ (SNM-limited $V_{MIN}$ and time-limited $V_{MIN}$) are explained. Simulation results show that SNM-limited $V_{MIN}$ is more sensitive to NBTI while time-limited $V_{MIN}$ is more prone to suffer from PBTI effect. The proposed NBTI/PBTI-aware control of wordline pulse width and woldline voltage improves cell stability, and mitigates the $V_{MIN}$ degradation induced by NBTI/PBTI.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1011-1014
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• 2004

In this paper, we present a new DC-DC converter for gate driver circuit in low temperature poly-Si TFT technology. It is composed of a newly developed charge pump circuit and a regulator circuit. When the input voltage is 5V, the efficiency of a positive charge pump used in the DC-DC converter and that of a negative charge pump is 69.0% and 57.1%, respectively. The output voltage of DC-DC converter varies 200mV when the target voltages of DC-DC converter are 9V, -6V and the threshold voltage of TFTs varies ${\pm}$ 0.5V.

• Journal of Power Electronics
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• v.11 no.6
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• pp.846-855
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• 2011

This paper proposes a control mode switching scheme between vector control and constant V/f control for induction machine (IM) drives for maximum torque utilization in a higher speed region. For the constant V/f scheme, a smooth transition method from the linear range of PWM up to the six-step mode is applied, by which the machine flux and torque can be kept constant in a high-speed range. Also, a careful consideration of the initial phase angle of the voltage in the transient state of the control mode change between the vector control and V/f schemes is described. The validity of the proposed strategy is verified by the experiment result for a 3-kW induction motor drives.

• Transactions of Materials Processing
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• v.24 no.1
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• pp.44-51
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• 2015

The current study seeks to examine the effects of V and C additions on the mechanical and low thermal expansion properties of a high strength invar base alloy. The base alloy (Fe-36%Ni-0.9%Co-2.75%Mo-0.7Cr-0.23Mn-0.17Si-0.3%C, wt.%) contains $Mo_2C$ carbides, which form as the main precipitate. In contrast, alloys with additions of 0.4%V+0.3%C (alloy A) or 0.4%V+0.45%C (alloy B) contain $Mo_2C$+[V, Mo]C carbides. The average thermal expansion coefficients of these high strength invar based alloys were measured in the range of $5.16{\sim}5.43{\mu}m/m{\cdot}^{\circ}C$ for temperatures of $15{\sim}230^{\circ}C$. Moreover, alloy B showed lower thermal expansion coefficient than the other alloys in this temperature range. For the mechanical properties, the [V, Mo]C improved hardness and strengths(Y.S. and T.S.) of the high strength invar base alloy. T.S.(tensile strength) and Y.S.(yield strength) of hot forged alloy B specimen were measured at 844.6MPa and 518.0MPa, respectively. The tensile fractography of alloy B exhibited a ductile transgranular fracture mode and voids were initiated between the [V, Mo]C particles and the matrix. Superior properties of high strength and low thermal expansion coefficient can be obtained by [V, Mo]C precipitation in alloy B with the addition of 0.4%V and 0.45%C.

• Journal of Korean Society for Quality Management
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• v.46 no.3
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• pp.453-464
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• 2018

Purpose: The purpose of this study is to propose a solution to the case where $V_{50}$ calculation is impossible in the process of bulletproof test. Methods: In this study, we proposed a $V_{50}$ estimation method using logistic regression analysis. Six scenarios were applied by combining the homogeneity of the sample and the speed range. Then, 1,000 simulations were performed per scenario and six assumptions reflecting the reality were applied. Results: The result of the study, it was confirmed that there was no statistical difference between the $V_{50}$ value calculated by the conventional method and the $V_{50}$ value calculated by the improvement method. Therefore, in situations where $V_{50}$ can not be calculated, it is reasonable to use logistic regression analysis. Conclusion: This study develops a methodology that is easy to use and reliable by using statistical model based on actual data.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1038-1041
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• 2006

We report low operating voltage and long lifetime organic light-emitting diodes (OLEDs) with a vanadium oxide $(V_2O_5)-doped$ N,N'-di(1-naphthyl)- N,N'-diphenylbenzidine $({\alpha}-NPD)$ layer between indium tin oxide and ${\alpha}-NPD$. At a luminance of $1000\;cd/m^2$, $V_2O_5$ doped ${\alpha}-NPD$ device shows a operation voltage of 5.1V, while the device without $V_2O_5$ shows 5.8V. The $V_2O_5$ doped $({\alpha}-NPD)$ device also shows a longer lifetime and smaller operation voltage variation over time. It is suggested that the improved device performance can be attributed to the higher hole-injection efficiency and stability of the $V_2O_5$ doped $({\alpha}-NPD)$ layer.