• International Journal of Aeronautical and Space Sciences
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• v.16 no.3
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• pp.445-450
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• 2015

Generally, Low Earth Orbit (LEO) satellites are used to collect image or video from earth's surface. The collected data are stored on-board and/or transmitted to the main ground station directly or via polar ground station using terrestrial line. Today, an intersatellite link between a LEO and a GEO satellite allows transmission of the collected data to the main ground station through the GEO satellite. In this study, an approach for a continuous communication starting from LEO through GEO to ground station is proposed by determining the optimum ground station locations. In doing so, diverse ground stations help to determine the GEO orbit as well. Cross-correlation of the long term daily rainfall averages are multiplied with the logarithmic correlation of the sites to calculate the joint correlation of the diverse ground station locations. The minimum values of this joint correlation yield the optimum locations of the ground stations for Q/V-band communication and satellite control operations. Results for several case studies are listed.

• ETRI Journal
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• v.41 no.6
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• pp.703-714
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• 2019

Many use cases have been presented on providing convenience and safety for vehicles employing wireless access in vehicular environments and long-term evolution communication technologies. As the 70-MHz bandwidth in the 5.9-GHz band is allocated as an intelligent transportation system (ITS) service, there exists the issue that vehicular communication systems should not interfere with each other during their usage. Numerous studies have been conducted on adjacent interfering channels, but there is insufficient research on vehicular communication systems in the ITS band. In this paper, we analyze the interference channel performance between communication systems using distribution functions. Two types of scenarios comprising adjacent channel interference are defined. In each scenario, a combination of an aggressor and victim network is categorized into four test cases. The minimum requirements and conditions to meet a 10% packet error rate are analyzed in terms of outage probability, packet error rate, and throughput for different transmission rates. This paper presents an adjacent channel interference ratio and communication coverage to obtain a satisfactory performance.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.677-681
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• 2014

A high voltage pulse generator was fabricated to radiate ultrawide band electromagnetic pulse. A coaxial type of Blumlein pulse forming line is employed to produce a pulse of high voltage (>300 kV) and short pulse duration (~5 ns). A helical strip/wire type of air-cored pulse transformer was used to charge the Blumlein pulse forming line up to more than 300 kV. A peaking switch is essential to make the pulse rise time as fast as possible. Typically, the rise time is ~500 ps. The output pulse of the generator is radiated into air through an exponentially tapered TEM horn antenna. The electric field intensity of a radiated pulse was measured as a function of the distance from the transmitting horn as well as the output voltage of the peaking switch. The peak-to-peak value of the electric field intensity at 10 m from the TEM antenna was~100 kV/m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.121-122
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• 2007

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched sem-insulating GaAs(l00) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}l0^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155\;K)$.

• Journal of the Korean Physical Society
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• v.81
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• pp.867-875
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• 2022

This paper explored the effect of deposition conditions on the characteristics of copper oxide (CuO_x) thin films prepared by direct current (DC) magnetron sputtering. X-ray diffraction exhibited that CuO with n-type conductivity was the main composition regardless of the DC magnetron sputtering power whereas the phase transition from n-type CuO to p-type Cu₂O was observed with decreasing the oxygen pressure (OP) from 40 to 20%. The optical band gap ranges of 1.6-1.9 eV, which are characteristic of n-type CuO, were determined for samples prepared with OPs of 30-40% while the optical band gap of 2.3 eV, which is characteristic of p-type Cu₂O, was measured for samples prepared with an OP of 20%. In addition, only Cu⁺ X-ray photoelectron spectroscopy (XPS) peak at the ~932.6 eV position exists in the films deposited with an OP of 20%, whereas only Cu²⁺ XPS peaks at ~934.2 eV and in the range of 940-945 eV are observed in the films deposited with an OP of 40%. Furthermore, as a result of XPS depth profile analysis, it was confirmed that the composition ratio of the sample prepared at an OP of 20% was Cu₂O, whereas the composition ratio of the sample prepared at an OP of 40% was CuO. These suggest that the CuO_x thin films could be constantly converted from n-type CuO to p-type Cu₂O by decreasing the oxygen partial pressure. Thin film transistors with Cu₂O deposited at 20% OP revealed p-type characteristics such as onset voltage (V_ON) of -3 V, saturated hole mobility of 8 cm²/Vs at V_GS = -28 V, subthreshold swing of 0.86 V/decade at V_GS-V_ON = -0.5 V, and on/off ratio of 1.14 × 10³.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of The Korean Astronomical Society
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• v.28 no.1
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• pp.31-43
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• 1995

We present UBVRI CCD photometry of the Type Ie supernova SN 19941 in M51 which was discovered on April 2, 1994 (UT). UBVRI CCD photometry of SN 1994 I were obtained for the period of the first two months from April 4, 1994, using the Seoul National University Observatory 60 cm telescope. The light curves of SN 19941 show several interesting features: (a) SN 19941 reaches the maximum brightness at B-band on April 8.23 (B = 13.68 mag), at V-band on April 9.10 (V = 12.89 mag), and at I-band on April 10.32 (I = 12.48 mag); (b) The light curves around the maximum brightness are much narrower than those of other types of supernovae; (c) The light curves after the peak decline more steeply than those of other types of supernovae; and (d) The colors get redder from $(V-R){\approx}0.2 mag ((V - I){\approx} 0.3 mag, (B - V){\approx}0.7 mag)$ on April 4 to $(V-R){\approx}0.6 mag ((V-1){\approx}0.9 mag, (B-V){\approx}1.3 mag)$ on April 18. Afterwards (V - R) colors get bluer slightly $(by\~0.005 mag/day)$, while (V-I) colors stay almost constant around $(V-1){\approx}1.0 mag$. The color at the maximum brightness is (B-V)=0.9 mag, which is $\~1$mag redder than the mean color of typical Type la supernovae at the maximum brightness. The light curves of SN 1994I are similar to those of the Type Ie supernova SN 1962L in NGC 1073. Adopting the distance modulus of $(m-M)_0 = 29.2 mag$ and the reddening of E(B - V) = 0.45 mag [Iwamoto et al. 1994, preprint for ApJ], we derive absolute magnitudes at the maximum brightness of SN 1994I, Mv(max) = -17.7 mag and MB(max) = -17.4 mag. This result shows that SN 1994I was $\~2$mag fainter at the maximum brightness compared with typical Type Ia supernovae. A narrower peak and faster decline after the maximum in the light curve of SN 1994I compared with other types of supernovae indicate that the progenitor of SN 1994I might be a lower mass star compared with those of other types of supernovae.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.65-71
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• 2010

This paper presents a 14-band LO generator architecture for MB-OFDM UWB systems using 3.1 GHz~10.6 GHz frequency band. The proposed LO generator architecture has been consisted of only one PLL and the fewest nonlinear components to generate 14 LO signals with high purity while consuming low dc power consumption. In addition, major spurious generated from the LO generator have been located in the out of UWB band. The proposed LO generator has been implemented in a $0.13-{\mu}m$ CMOS technology and consumes a dc power consumption of 93~103 mW from a 1.5 V supply. The simulation results show an in-band spurious suppression ratio of more than 41 dBc and a band-switching time of below 3 nsec.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.14-24
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• 1996

We have investigated atomic and electronic structures of a clean Pd(111) surface using low energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES). A typical clean LEED pattern with a 3-fold symmetry has been observed, corresponding to that for an fcc (111) surface. ARPES measurements have been performed along the $\Gamma-M,\Gamma-K,\Gamma-M$TEX> symmetry lines, from which the experimental band structure of Pd(111) has been determined. The experimental band structure and work function of Pd(111) surface are found to agree well with the calculated band structure of bulk Pd and the calculated work function of Pd(111), respectively. However, the peak positions in the experimental band structure are located closer to the Fermi level than in the theoretical band structure by 0.1~0.8 eV, depending on the $\kappa$-points in the Brillouin zone. In additin, the experimental band widths are narrower than the theoretical band widths by about 0.5eV. The effects of the localized surface Pd 4d states and the Coulomb interaction between Pd 4d bulk electrons have been discussed as possible origins of such discrepancies between experiment and theory.