• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.157-158
• /
• 2013

Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.

• Journal of Magnetics
• /
• v.8 no.2
• /
• pp.89-92
• /
• 2003

The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO$_3$barrier layer has been stud-ied. The samples with a structure of glass/NiO(600${\AA}$)/Co(100${\AA}$)/SrTiO$_3$(400 ${\AA}$)/SrTiO$_3$(20-100${\AA}$)/NiFe(100${\AA}$) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (${\pm}$100 Oe) perpendicular to the junction edge line. In the SrTiO$_3$ barrier thickness of 40${\AA}$, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.75-78
• /
• 2002

The dielectric properties for Ni electrode multilayer ceramic chip capacitor for Y5V has been studied with $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_2+MnO_2$ 0.2wt%, $Y_2O_3$ 0.18wt%, $SiO_2$ 0.15wt%, glass frit 1 wt% composition. The m ratio in the range of 1.006 ~ 1.012 have dielectric constant 9,500 ~ 14,500 and insulation resistance 390 ~ 460 $G{\Omega}$. Using the dielectrics, nikel electrode multilayer chip capacitor with Y5V, 104Z in EIA 0603 size specific capacitance were developed.

• Journal of the Korean Ceramic Society
• /
• v.28 no.2
• /
• pp.101-108
• /
• 1991

0.2 mo1% La doped BaTiO3 samples were prepared by a wet chemical process (Pechini process) and electrical conductivity were measured from annealing temperatures(800-110$0^{\circ}C$) to room temperature continuously. 2 probe I-V characteristics showed that Pt electrodes were non-ohmic below about 80$0^{\circ}C$ for Ladoped sample. I-V curves showed varistor behavior and breakdown voltages showed PTC-like behavior. AC complex impedance of 0.2 La and 0.05 Mn mo1% doped BaTiO3 samples with three different electrodes (electroless Ni, Pt, Ag electrodes) were measured with temperature variation. Complex impedance plots showed that the samples with electroless Ni electrodes have negligible electrode resistance. Samples with Ag or Pt paste electrodes showed large electrode resistance. PTC effect, which is defined as the ratio of maximum resistance to minimum resistance, was found to be less than 10 for 0.2 mo1% La doped dense sample however greater than 105 with codoping of 0.05 mo1% Mn and 0.2 mol% La.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2002.12a
• /
• pp.174-175
• /
• 2002

A ramp-type tunneling magnetoresistance (TMR) junction having structure NiO(60 nm)/pinned Co(10 nm)MiO(60 nm)/barrier SrTiO$_3$(2-10 nm)/free NiFe(10 nm) with the 15 degree slope was investigated. We obtained nonlinear I(V) characteristics for ramp-type tunneling junctions that have distinctive difference with and without applied magnetic field. In the barrier SrTiO$_3$ thickness of 4 nm, the TMR was about 52% at a bias voltage of 50 mV. (omitted)

• Journal of the Korean Vacuum Society
• /
• v.6 no.S1
• /
• pp.70-74
• /
• 1997

The study of the thickness dependence of the electron energy structure of Fe, Ni, Ti and Zr sublayers in Ni/Ti and Fe/Zr multilayers by using the experimental and computer simulated optical spectroscopy has been performed. A series of Ni/Ti and Fe/Ze multiayered films (MLF) with a bilayer period of 0.5 - 30 nm and constant (Ni/Ti) / different (Fe/Zr) sublayer thickness ratios were prepared by using computer-controlled double-pair target face-to-face sputtering onto a glass substrate at room temperature (RT) Computer simulation of the resulting optical properties of these MLF was carried out by solving of multireflection problem with a matrix method assuming either "sharp" interfaces resulting in rectangular depth profiles of the components or "mixed" (alloy-like) interfaces of variable thickness between pure-metal sublayers. Optical constants of pure bulk metals as well as equiatomic alloy interfaces were employed in these simulations. It was shown that the difference between experimental and simulated optical properties of the investigated MLF increases with decrease in sublayer thickness. This result allows to conclude that the electronic structures of sublayers below 4-5 nm thickness in mlf differ from the corresponding bulk metals.ponding bulk metals.

• Nuclear Engineering and Technology
• /
• v.51 no.8
• /
• pp.1978-1982
• /
• 2019

The paper presents the electrical performance measurements of a prototype nuclear battery and two types of betavoltaic cells. The electrical performance was assessed by measuring current-voltage properties (I-V) and determining the short-circuit current and the open-circuit voltage. With ⁶³Ni as an irradiation source, the open-circuit voltage and the short-circuit current were determined as 1 V and 64 nA, respectively. The prototype consisted of 10 betavoltaic cells that were prepared using radioactive ⁶³Ni. Electroplating of the radioactive ⁶³Ni on an ohmic contact (Ti-Ni) was carried out at a current density of 20 mA/㎠. Two types of betavoltaic cells were studied: with an external ⁶³Ni source and a ⁶³Ni-covered source. Under irradiation of the ⁶³Ni source with an activity of 10 mCi, the open-circuit voltage V_oc of the fabricated cells reached 151 mV and 109 mV; the short-circuit current density J_sc was measured to be 72.9 nA/cm2 and 64.6 nA/㎠, respectively. The betavoltaic cells had the fill factor of 55% and 50%, respectively.

• Transactions of the Korean hydrogen and new energy society
• /
• v.5 no.1
• /
• pp.1-8
• /
• 1994

Lattice structure, hydrogen absorption characteristics, discharge capacity and cycle life of $V_{22}Ti_{16}Zr_{16}Ni_{39}X_7$(X= Cr, Co, Fe, Mn, Al) alloys were investigated. The matrix phases of these alloys were the C14 Laves phase. Chromium-containing alloy had a vanadium-rich phase in addition to the Laves phase. The chromium, maganese, or aluminum-containing alloys had lower hydrogen equilibrium pressure and larger hydrogen absorption content than the cobalt or iron-containing alloys. The discharge capacities of these alloys were 270~330mAh/g. The discharge capacity according to the alloying element X decreased in the order of Mn>Cr>Co, Al)Fe. The charge/discharge cycle lives of the chromium, cobalt or iron-containing alloys were longer than those of maganese or aluminum-containing alloys due to the lower vanadium dissolution rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.350-353
• /
• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Transactions of the Korean hydrogen and new energy society
• /
• v.10 no.2
• /
• pp.141-149
• /
• 1999

Recently the Ni/MH secondary battery has been studied extensively to achieve higher energy density, longer cycle life and faster charging-discharging rate etc. In this work, the electrode properties of $(LM)Ni_{4.49}Co_{0.1}Mn_{0.205}Al_{0.205}$ alloy and $Ti_{0.6}Zr_{0.4}V_{0.6}Ni_{1.4}$ alloy with addition of Pd were investigated. These alloys did not show any change in XRD pattern by Pd addition. As Pd was added as alloy element, the activation behavior was not affected significantly in both $AB_2$ type and $AB_5$ type electrodes and, On charging and discharging in high current density, Discharge capacity with increasing of Pd content was more decreased. But cycle life was showed increasing. Especially the electrode of $Ti_{0.6}Zr_{0.4}V_{0.6}Ni_{1.4}+0.5wt%$ Pd alloy was not almost decreased discharge capacity for 400cycles.