• 한국세라믹학회지
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• 제35권7호
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• pp.749-756
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• 1998

TiC-Ni and TiC-Ni-Mo cermet powders were produced by Self-propagating High temperature Synthesis (SHS) process. The cooling rate of synthesized powders were controlled by using the V-shaped copper jig and the carbide size decreased with increasing the cooling rate I. e decreasing the width of copper jig Round shape carbide particles were produced after SHS reaction in TiC-Ni as well as TiC-Ni-Mo powders. Local segregation of Mo rich phases was observed in SHS powder of TiC-Ni-Mo and the uneven dis-triobution of Mo promoted the faster growth rate of carbide particles during sintering compared to the same composition specimen with commercial TiC powder. Howogeneous microstructure of TiC-Ni-Mo cermet was obtained when the elemental Mo powder was mixed with the SHS powder of TiC-Ni.

• 한국수소및신에너지학회논문집
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• 제7권1호
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• pp.39-44
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• 1996

The discharge capacity of V-Ti-Ni(V-rich) metal hydride electrode during the charge-discharge cycling was investigated in KOH electrolyte. All electrodes were degraded within 25 cycles. To investigate the cause of the degradation phenomena impedance measurements were performed by using E.I.S(electrochemical impedance spectroscopy). The surfaces of the degraded electrodes were examined by Auger electron spectroscopy (AES). It was observed that all electrodes were covered with oxygen from the surface to the bulk, titanium was enriched near surface, and vanadium was dissolved from the surface to the bulk.

• 한국재료학회지
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• 제15권5호
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• pp.318-322
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• 2005

Ti-capped NiSi contacts were formed on $p^+/n$ junctions to improve the leakage problem and then Cu was deposited without removing the Ti-capping layer in an attempt to utilize as a diffusion barrier. The electrical characteristics of these $p^+/n$ diodes with Cu/Ti/NiSi electrodes were measured as a function of drive-in RTA(rapid-thermal annealing) and silicidation temperature and time. When drive-in annealed at $900^{\circ}C$, 10 sec. and silicided at $500^{\circ}C$, 100 sec., the diodes showed the most excellent I-V characteristics. Especially, the leakage current was $10^{-10}A$, much lower than reported data for diodes with NiSi contacts. However, when the $p^+/n$ diodes with Cu/Ti/NiSi contacts were furnace-annealed at $400^{\circ}C$ for 40 min., the leakage current increased by 4 orders. The FESEM and AES analysis revealed that the Ti-capping layer effectively prohibited the Cu diffusion, but was ineffective against the NiSi dissociation and consequent Ni diffusion.

• 대한화학회지
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• 제23권2호
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• pp.65-74
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• 1979

팔면체$ [Ti(Ⅲ)A_3B_3]$, $ [V(Ⅲ)A_3B_3]$, $ [Fe(Ⅲ)A_3B_3]$ 및 $ [Ni(Ⅱ)A_3B_3]$ 형태 착물의 바닥상태에 대한 리간드 궤도함수의 spin-orbit coupling의 영향을 고찰하여 보았다. 리간드 궤도함수의 spin-orbit coupling이 바닥상태의 파동함수에는 영향을 주지 않았으나 에너지 준위의 분열에는 영향을 주었으며, 그 크기는 Ti(Ⅲ) > V(Ⅲ) > Fe(Ⅲ)의 순서로 감소하였다

• 한국수소및신에너지학회논문집
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• 제10권4호
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• pp.219-224
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• 1999

Effects of alloy modification for the $Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.4}$ alloy as an electrode materials have been investigated. When Ti in the alloy was partially substituted by Zr, the hydrogen storage capacity and subsequently the discharge capacity increased significantly, however, the activation characteristic and rate capability decreased. By substituting Mn with other elements (Cr, Co and Fe) in the alloy, discharge capacity decreased but the cycle life and rate capability were improved. Considering both the discharge capacity, the high rate discharge property and cycle life, the $Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.3}Cr_{0.1}$ alloy among the alloys subjected to the test was found to be a prominent alloy for a practical usage.

• 전기학회논문지
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• 제57권9호
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• pp.1599-1605
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• 2008

The research was conducted in order to improve the hydrogen generation efficiency of the electrical plasma technology from tap water by using $TiO_2$ photocatalyst, mixed Cu - $TiO_2$ powder, and mixed Ni - $TiO_2$ powder as the catalysts. Experiments were performed with the pulsed power and nitrogen carrier gas. The result has shown that the hydrogen concentration with the presence of $TiO_2$ powder was created higher than that of without using photocatalyst. The hydrogen concentration with using $TiO_2$ was 3012ppm corresponding to the applied voltage of 16kV, while it without using the $TiO_2$ was 1464ppm at the same condition . The effect of $TiO_2$ powder was strongly detected at the applied voltages of 15kV and 16kV. This phenomena might be resulted from the co-effect of the pulsed power discharge and the activated state of $TiO_2$ photocatalyst. The co-effect of the mixed catalysts such as Cu-$TiO_2$ and Ni-$TiO_2$ (the mixed photocatalyst $TiO_2$ and transition metals) were also investigated. The experimental results showed that, Cu and Ni powder dopants were greatly enhancing the activity of the $TiO_2$ photocatalyst. Under these experimental conditions the extremely high hydrogen concentrations at the optimal point were produced as 4089ppm and 6630ppm, respectively.

• 한국수소및신에너지학회논문집
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• 제6권1호
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• pp.1-9
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• 1995

$V_{0.9}Ti_{0.1}$ 합금은 많은 양의 수소를 흡수할 수 있으나 KOH 전해질내에서 방전이 되지 않기 때문에 Ni-MH 전지의 음극재료로 사용할 수 없었다. 이와 같은 $V_{0.9}Ti_{0.1}$ 합금을 전해질내에서 수소흡수/방출에 대한 촉매효과를 갖도록 Ni 분말과 소결하였다. Ni 분말과 소결한 모든 시편은 KOH 전해질내에서 10 Cycle 이내에 활성화 되었다. 방전용량은 소결시 첨가된 Ni 분말의 양에 따라 maximum 거동을 보였다. 가장 높은 방전용량을 보여준 전극의 경우는 소결시 첨가된 Ni 분말의 양이 25wt.%이며 그 방전용량은 302mAh/g이었다. SEM과 EDS 그리고 XRD 분석결과 소결시 $VNi_3$가 형성됨을 알 수 있었다. $V_{0.9}Ti_{0.1}$ 합금의 표면에 형성된 $VNi_3$는 전극의 최적방전조건과 밀접한 관련이 있음을 알 수 있었다. Brewer-Engel 이론에 의하면 $VNi_3$는 수소의 evolution에 대한 전기적 촉매효과가 매우 높다고 보고하고 있으며, 이러한 효과는 본 실험결과 교환전류밀도의 증가와 방전시 과전압의 감소로써 나타났다. 본 연구에서는 수소의 저장용량은 크나 KOH 전해질내에서 방전되지 않는 합금을 사용하여 Ni-MH 전지용 음극개발을 하기 위해 Ni분말과 소결하여 합금의 표면을 변화시키는 새로운 방법을 제안하고자 한다.

• 전기화학회지
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• 제3권2호
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• pp.72-75
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• 2000

For the purpose of developing the non-stoichiometric Zr-based Laves phase alloy with higher capacity and better performance for electrochemical application, extensive work has been carried out in KAIST. After careful alloy design of $ZrMn_2-based$ hydrogen storage alloys through varing their stoichiometry while susbstituting or adding some alloying elements, the $Zr-Ti-(Lh-V-Ni)_{2.2},\;Zr-Ti-(Mn-V-Cr-Ni)_{1.8\pm0.1}$ with high capacity and better performance was developed. Consequently the $Zr-Ti-(Mn-V-Ni)_{2.2}$ alloy has a high discharge capacity of 394mAh/g and shows a high rate capability equaling to that of commercialized $AB_5$ type alloys. On the other hand, in order to develop the hydrogen storage alloy with higher discharge capacity, the hypo-stoichiometric $Zr(Mn-V-Ni)_{2-\alpha}$ alloys substituted by Ti are under developing. As the result of competitive roles of Ti and $stocihiometry({\alpha})$, the discharge capacity of $Zr-Ti-(Mn-V-Cr-Ni)_{l.8\pm0.1}$ alloys is about 400mAh/g(410 mAh/g, which shows the highest level of performance in the Zr-based alloy developed. Our sequential endeavor is improving the shortcoming of Zr-based Laves phase alloy for commercialization, i.e., poor activation property and low rate capability, etc. It is therefore believed that the commercialization of Zr-based Laves phase hydrogen storage alloy for Ni-MH rechargeable battery is in near future.

• Transactions on Electrical and Electronic Materials
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• 제9권2호
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• pp.47-51
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• 2008

In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $NiSi_2$ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to $650^{\circ}C$ and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.