• Journal of Biomedical Engineering Research
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• v.28 no.4
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• pp.477-483
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• 2007

We have measured EOG and fMRI simultaneously to investigate whether eye movement (blinking mechanism) might influence functional magnetic resonance imaging (fMRI) signal response in the primary visual cortex. $T2^*-weighted$ Echo-Planar Imaging (EPI) with concurrent electrooculogram (EOG) was acquired in four subjects while they viewed a fixation point and a checkerboard with a flickering rate of 8Hz. With the help of EOG information we divided the experimental blocks into two different conditions: fixation and moving eye. We have compared the fMRI data of these two conditions. Our results have shown that there is no difference between these two conditions. This might suggest that eye blinking does not affect BOLD signal changes in the primary visual cortex. This means further that eye blinking can be ignored in data processing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.205-210
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• 1998

$Li^+$ and $Mo^{6+}$ containing huntite borates $YbAl_3(BO_3)_4$were grown by spontaneous crystallization. All crystal show only the huntite-borate phase detected by X-ray powder diffraction analysis. On the basis of the data of the composition analysis, the occupation mechanism of each cation in the huntite structure has been discussed. $Li^+$ and $Mo^{6+}$ containing $YbAl_3(BO_3)_4$shows a six times higher intensity of the green light SHG detected by the powder technique than YAl_3(BO_3)_4$.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.1-4
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• 2015

Production of $MgB_2$ film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of $MgB_2$-Hastelloy and the slightly increased $T_c$ of $MgB_2$ tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when $MgB_2$ tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in $MgB_2$ tape in affecting the superconducting properties is considerably important for practical applications.

• Korean Journal of Head & Neck Oncology
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• v.36 no.1
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• pp.39-44
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• 2020

Xeroderma pigmentosum is a rare autosomal recessive disease, related to defects in DNA repair mechanism. It presents skin lesions on sun-exposed areas, leading to various skin cancer. Skin lesions can be treated with cryotherapy, skin resurfacing, 5-FU, Imiquimod, topical T4 endonuclease V, radiotherapy and genetic therapy, but invasive skin cancer should be treated by a surgery. We report a 12-year-old female xeroderma pigmentosum patient with recurrent basal cell carcinoma successfully treated by skin grafting. In that there is no cure for this disease, prevention and patient education is most important.

• Asian Pacific Journal of Cancer Prevention
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• v.15 no.5
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• pp.2313-2318
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• 2014

Peroxisome proliferator-activated receptor gamma (PPAR-${\gamma}$), a ligand-dependent nuclear transcription factor, has been found to widely exist in tumor tissues and plays an important role in affecting tumor cell growth. In this study, we investigated the effect of PPAR-${\gamma}$ on aspects of the cervical cancer malignant phenotype, such as cell proliferation and apoptosis. Cell growth assay, Western blotting, Annexin V and flow cytometry analysis consistently showed that treatment with troglitazone (TGZ, a PPAR-${\gamma}$ agonist) led to dose-dependent inhibition of cervical cancer cell growth through apoptosis, whereas T0070907 (another PPAR-${\gamma}$ antagonist) had no effect on Hela cell proliferation and apoptosis. Furthermore, we also detected the protein expression of p53, p21 and Mdm2 to explain the underlying mechanism of PPAR-${\gamma}$ on cellular apoptosis. Our work, finally, demonstrated the existence of the TGZ-PPAR-${\gamma}$-p53 signaling pathway to be a critical regulator of cell apoptosis. These results suggested that PPAR-${\gamma}$ may be a potential therapeutic target for cervical cancer.

• Journal of Pharmaceutical Investigation
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• v.14 no.2
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• pp.92-103
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• 1984

The action of debrisoquine on renal function in rabbits was studied. 1. When debrisoquine was given into ear vein, it did not affect on renal functin with smaller doses of 0.1 or 0.3mg/kg, while with higher dose of 1.0mg/kg it elicited the significant decrease of urine flow, renal plasma flow and glomerular filtration rate, and the increase of filtration fraction, and at the same time sodium excreted in urine, FENa (fractional excretion of sodium) and osmolar clearance were significantly decreased, and then it exhibited the increase of $K^+/Na^+$ ratio and no changes of $T^cH_2O$. 2. Debrisoquine (1.0mg/kg), when injected repeatedly into a vein, produced a more marked decrease of urine flow. 3. Debrisoquine induced-antidiuretic action was not affected by pretreatment with phentolamine (2mg/kg, i.v.), alpha-sympathetic blocking agent. 4. Debrisoquine given intracerebroventricularly did not produce a significant change on renal function in dose of 0.1mg/kg. These results suggest that debrisoquine produce the antidiuretic effect in rabbit, and the mechanism of its action is due to dual actions that are the decrease of hemodynamic effect and the facilitation of reabsorption of sodium in renal tubules.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.172-172
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• 2010

$MgB_2$ doped with $TiO_2$ was prepared by the in-situ solid state reaction to study the effects of $TiO_2$ dopant on the flux pinning behavior of $MgB_2$ superconductor. From the field-cooled and the zero-field-cooled temperature dependences of magnetization, the realms of vortex-glass and vortex-liquid states of $TiO_2$-doped $MgB_2$ were determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). The critical current density was estimated from the width of hysteresis loops in the framework of Beam's model at different temperatures. The results indicate that nano-scale $TiO_2$ inclusions play a role of the effective pinning centers and lead to the enhanced upper critical field and critical current density. It is suggested that the grain-boundary pinning mechanism is realized in $TiO_2$-doped $MgB_2$ superconductor.

• Journal of Biosystems Engineering
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• v.18 no.4
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• pp.371-381
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• 1993

Threshing operation is performed by impact, compression and friction forces inside the thresher. These values should be appropriate to the crop condition to enhance the threshing and separating efficiency and to decrease the grain damage. To analyze the threshing process inside the rasp-bar type thresher, impact, friction and compression forces were measured using transducers with strain gage circuits. To measure the impact forces and friction forces between the rasp-bar and crop, full bridge strain gage circuit was built on the rasp-bar holder. To measure the compression forces and circumferential friction forces between the concave and crop, two sets of full bridge strain gage circuits were built on the T-type concave transducer. Threshing work of wheat crop with 12% of moisture content was performed at 3 levels of compression ratio and with 3 replications. Each transducer could not measure the exact forces continuously because the transducer oscillates with the forces. However they could measure maximum forces and force distribution according to the time. Average friction coefficients between crop and concave was 0.61 not showing any significant difference according to the compression ratio. Average acceleration of the crop in the cylinder appeared from $70.6m/s^2$ to $140.8m/s^2$ according to the compression ratio. The velocity of the crop at the exit of the cylinder appeared from 10.7m/s to 15.0m/s according to the compression ratio.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.223-230
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• 1997

Tungsten oxide and nickel oxide thin films were deposited onto ITO(Indium Tin Oxide) transparent glass by the E-beam evaporation and were used as a cathode and an anode for the EC(Electrochromic) smart window, respectively. Stoichiometric structures of the deposited films were investigated by the implementation of XPS(X-ray Photoelectron Spectroscopy) analysis and the results were $WO_{2.42}$ and $NiO_{0.44}$. This oxygen deficincy might affect affect the transparency of the thin films. The electrolyte for the EC smart windows was PAN-$LiCIO_4$ conducting polymer. EC(Ethylene Carbonate)and PC(Propylene Carbonate) were added as plasticizer to enhance ion conductivity. When the weight ratio of the EC : PC was 3 : 1, transmission difference and cycle life performance were tested. Polymer EC windows showed 40% $\Delta$T at 1.5V operating volage for 3,200 cycles. Structural degradation was observed by the SIMS(Secondary Ion Mass Spectroscopy) analysis and it was confirmed that structural degradation of polymer caused by the solvent evaporation was the main cause to degrade EC smart windows.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.213-216
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• 2003

Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.