• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.445-448
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• 2006

Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of $V_T$ shift. The reduced bias stress effect using $SiO_2$ blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with $SiO_2$ blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.210-213
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• 2004

We synthesized photoalignment material of high thermal resistance with hydroxyl aromatic polyimide, and studied the liquid crystal (LC) aligning capabilities on the photopolymer layers. Also, electro-optical (EO) performances for the twisted-nematic (TN)-liquid crystal display (LCD) photoaligned with linearly polarized UV exposure were investigated. A good LC alignment with UV exposure on the photopolymer surface can be obtained. However, the low pretilt angles were obtained below $1^{\circ}$. The Voltage-transmittance (V-T) curve without backflow bounce in the photoaligned TN cell with UV exposure was observed. The response time of photoaligned TN cell was measured about 24 ms. Finally, The photoaligned TN cell has few hysteresis, and shows the residual DC voltage that is less.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2018년도 전력전자학술대회
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• pp.280-281
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• 2018

The methods for adjusting the output voltage as well as the heater temperature of a single-phase inverter for the heat treatment are proposed. The output voltage of the single-phase inverter is limited to 60 V for safety. The time constant of heater temperature is much higher than that of the output voltage. The stability may be deteriorated due to such large time constant difference. In order to ensure the stability, a hysteresis on/off control method for the heater temperature control is used. The performances for the proposed methods are verified with the experiments.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.22-25
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• 2000

Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.163-163
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• 2000

In this research, we used the ion irradiation technique which has an advantae in improving intentionally the properties of surface and interface in a non-equilibrium, instead of the conventional annealing method which has been known to improve the material properties in the equilibrium stat. Cu/Co multilayered films were prepared on SiN4/SiO2/Si substrates by the electron-beam evaporation for the Co layers and the thermal evaporation for the Cu layers in a high vacuum. The ion irradiation with a 80keV Ar+ was carried out at various ion doses in a high vacuum. Hysteresis loops of the films were investigated by magneto-optical polar Kerr spectroscopy at various experimental conditions. The change of atomic structure of the films before and after the ion irradiation was studied by glancing angle x-ray diffraction, and the intermixing between Co and Cu sublayers was confirmed by Rutherford backscattering spectroscopy. The surface roughness and magneto-resistance were measured by atomic force microscopy and with a four-point probe system, respectively. During the magneto-resistance measurement, we changed temperature and the direction of magnetization. From the results of experiments, we found that the change at the interfaces of the Cu/Co multilayered film induced by ion irradiation cause the change of magnetic properties. According to the change in hysteresis loop, the surface inplane component of magnetic easy axis was isotropic before the ion irradiation, but became anisotropic upon irradiation. It was confirmed that this change influences the axial behavior of magneto-resistance. Especially, the magneto-resistance varied in accordance with an external magnetic field and the direction of current, which means that magneto-resistance also shows the uniaxial behavior.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2006년도 춘계종합학술대회
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• pp.898-901
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• 2006

본 논문에서는 저손실 Mn-Zn 페라이트의 제조공정과 첨가제가 코어의 자기적 특성에 미치는 영향을 조사하였다. 통신부품재료로 Mn-Zn 페라이트 개발에는 필요한 높은 포화자속밀도 및 투자율을 가진 고주파 특성이 양호하고 자기손실도 적은 재료의 필요하다. 따라서, Mn-Zn 페라이트의 고주파 자기 특성의 개선을 위해서는 결정입자의 소경화와 입자계층의 고저항화에 따른 와전류 손실의 억제 및 미세 구조의 균일화에 따른 히스테리시스 손실의 저감이 중요하다. 본 논문에서는 고성능, 저손실의 자심재료를 위해 Mn-Zn Ferrite에 $V_2O_5$와 $CaCo_3$를 첨가하였다. 조성은 MnO : ZnO : $Fe_2O_3$ = 21 : 10 : 69 mol%로 하였다. 이 시료를 $1250^{\circ}C$에서 3시간 소결하였다. 측정은 0.1MHz에서 초투자율을 측정하였으며, 전력손실은 50mT에서 100kHz 및 온도를 변화시켜 측정하였다.

• 한국전기전자재료학회논문지
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• 제28권6호
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• pp.375-378
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• 2015

In this study, in order to develop the composition ceramics with the excellent electrocaloric properties, $(Pb_{0.88}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ ceramics were fabricated by the conventional solid-state method. Electrocaloric effects of $(Pb_{0.88}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ ferroelectric ceramics were investigated and discussed using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $220^{\circ}C$. The temperature change ${\Delta}T$ due to the electrocaloric effect was calculated by Maxwell's relations, and reached the maximum of ~0.19 at $190^{\circ}C$ under applied electric field of 30 kV/cm.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.13-16
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• 2017

In this study, in order to develop composition ceramics for refrigeration device application, $Ba(Ti_{0.9}Zr_{0.1})O_3$ composition was fabricated using conventional solid-state method. Electrocaloric effect of this ceramic was investigated using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $150^{\circ}C$. Curie temperature of $Ba(Ti_{0.9}Zr_{0.1})O_3$ ceramics showed $80^{\circ}C$. The maximum value of ${\Delta}T=0.12^{\circ}C$ in ambient temperature of $115^{\circ}C$ under 30 kV/cm was appeared. It is concluded that $Ba(Ti_{0.9}Zr_{0.1})O_3$ ceramics can be applied as refrigeration device application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.172-172
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• 2010

$MgB_2$ doped with $TiO_2$ was prepared by the in-situ solid state reaction to study the effects of $TiO_2$ dopant on the flux pinning behavior of $MgB_2$ superconductor. From the field-cooled and the zero-field-cooled temperature dependences of magnetization, the realms of vortex-glass and vortex-liquid states of $TiO_2$-doped $MgB_2$ were determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). The critical current density was estimated from the width of hysteresis loops in the framework of Beam's model at different temperatures. The results indicate that nano-scale $TiO_2$ inclusions play a role of the effective pinning centers and lead to the enhanced upper critical field and critical current density. It is suggested that the grain-boundary pinning mechanism is realized in $TiO_2$-doped $MgB_2$ superconductor.

• 한국자기학회지
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• 제19권4호
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• pp.133-137
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• 2009

GaAs 기판 위에 증착된 $MnGeP_2$ 박막이 상온에서 강자성을 보임을 자기화 및 자기저항 측정을 통해 확인하였다. 강자성-상자성 전이 온도는 320 K 정도였고, 항자력장은 5, 250, 300 K에서 각각 3870, 1380, 155 Oe 정도였다. 전하 운반자가 스핀 편극되어 있음을 암시하는 비정상 홀 효과를 관측하였다. 자기장에 따른 자기저항과 홀 저항을 측정할 때 이력곡선이 나타남을 확인하였다. $MnGeP_2$ 박막과 n-형 GaAs 기판 사이에 I-V 측정을 통해 전형적인 p-n 다이오드 특성을 보임을 확인하였다.