• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.445-448
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• 2006

Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of $V_T$ shift. The reduced bias stress effect using $SiO_2$ blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with $SiO_2$ blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.210-213
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• 2004

We synthesized photoalignment material of high thermal resistance with hydroxyl aromatic polyimide, and studied the liquid crystal (LC) aligning capabilities on the photopolymer layers. Also, electro-optical (EO) performances for the twisted-nematic (TN)-liquid crystal display (LCD) photoaligned with linearly polarized UV exposure were investigated. A good LC alignment with UV exposure on the photopolymer surface can be obtained. However, the low pretilt angles were obtained below $1^{\circ}$. The Voltage-transmittance (V-T) curve without backflow bounce in the photoaligned TN cell with UV exposure was observed. The response time of photoaligned TN cell was measured about 24 ms. Finally, The photoaligned TN cell has few hysteresis, and shows the residual DC voltage that is less.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.280-281
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• 2018

The methods for adjusting the output voltage as well as the heater temperature of a single-phase inverter for the heat treatment are proposed. The output voltage of the single-phase inverter is limited to 60 V for safety. The time constant of heater temperature is much higher than that of the output voltage. The stability may be deteriorated due to such large time constant difference. In order to ensure the stability, a hysteresis on/off control method for the heater temperature control is used. The performances for the proposed methods are verified with the experiments.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.22-25
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• 2000

Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.163-163
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• 2000

In this research, we used the ion irradiation technique which has an advantae in improving intentionally the properties of surface and interface in a non-equilibrium, instead of the conventional annealing method which has been known to improve the material properties in the equilibrium stat. Cu/Co multilayered films were prepared on SiN4/SiO2/Si substrates by the electron-beam evaporation for the Co layers and the thermal evaporation for the Cu layers in a high vacuum. The ion irradiation with a 80keV Ar+ was carried out at various ion doses in a high vacuum. Hysteresis loops of the films were investigated by magneto-optical polar Kerr spectroscopy at various experimental conditions. The change of atomic structure of the films before and after the ion irradiation was studied by glancing angle x-ray diffraction, and the intermixing between Co and Cu sublayers was confirmed by Rutherford backscattering spectroscopy. The surface roughness and magneto-resistance were measured by atomic force microscopy and with a four-point probe system, respectively. During the magneto-resistance measurement, we changed temperature and the direction of magnetization. From the results of experiments, we found that the change at the interfaces of the Cu/Co multilayered film induced by ion irradiation cause the change of magnetic properties. According to the change in hysteresis loop, the surface inplane component of magnetic easy axis was isotropic before the ion irradiation, but became anisotropic upon irradiation. It was confirmed that this change influences the axial behavior of magneto-resistance. Especially, the magneto-resistance varied in accordance with an external magnetic field and the direction of current, which means that magneto-resistance also shows the uniaxial behavior.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.898-901
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• 2006

In this paper, effect of ceramic processing was investigated on the magnetic properties of low loss Mn-Zn ferrite. High frequency characteristics, high saturated magnetic flux density and high magnetic permeability and low magnetism loss are required for the development of Mn-Zn ferrite, which is parts in the communication. therefore, in order to improve Mn-Zn ferrite with a high frequency , it is important to have a minimal change of particles and to control the eddy current loss caused by high resistance of the stratum of particles and to reduce the hysteresis loss by uniform change of detailed structure. In this paper, we added $V_2O_5\;and\;CaCo_3$ to Mn-Zn Ferrite to achieve a high efficiency, low loss core material. The compositions are MnO : ZnO : $Fe_2O_3$ = 21 : 10 : 69 mol%. They were sintered at $1250^{\circ}C$ for Three hours. Initial permeability was measured at 0.1MHz. At 50mT, Power loss was measured by temperature changing at 100kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.375-378
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• 2015

In this study, in order to develop the composition ceramics with the excellent electrocaloric properties, $(Pb_{0.88}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ ceramics were fabricated by the conventional solid-state method. Electrocaloric effects of $(Pb_{0.88}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ ferroelectric ceramics were investigated and discussed using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $220^{\circ}C$. The temperature change ${\Delta}T$ due to the electrocaloric effect was calculated by Maxwell's relations, and reached the maximum of ~0.19 at $190^{\circ}C$ under applied electric field of 30 kV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.13-16
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• 2017

In this study, in order to develop composition ceramics for refrigeration device application, $Ba(Ti_{0.9}Zr_{0.1})O_3$ composition was fabricated using conventional solid-state method. Electrocaloric effect of this ceramic was investigated using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $150^{\circ}C$. Curie temperature of $Ba(Ti_{0.9}Zr_{0.1})O_3$ ceramics showed $80^{\circ}C$. The maximum value of ${\Delta}T=0.12^{\circ}C$ in ambient temperature of $115^{\circ}C$ under 30 kV/cm was appeared. It is concluded that $Ba(Ti_{0.9}Zr_{0.1})O_3$ ceramics can be applied as refrigeration device application.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.172-172
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• 2010

$MgB_2$ doped with $TiO_2$ was prepared by the in-situ solid state reaction to study the effects of $TiO_2$ dopant on the flux pinning behavior of $MgB_2$ superconductor. From the field-cooled and the zero-field-cooled temperature dependences of magnetization, the realms of vortex-glass and vortex-liquid states of $TiO_2$-doped $MgB_2$ were determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). The critical current density was estimated from the width of hysteresis loops in the framework of Beam's model at different temperatures. The results indicate that nano-scale $TiO_2$ inclusions play a role of the effective pinning centers and lead to the enhanced upper critical field and critical current density. It is suggested that the grain-boundary pinning mechanism is realized in $TiO_2$-doped $MgB_2$ superconductor.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.133-137
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• 2009

$MnGeP_2$ thin films grown on GaAs exhibit room-temperature ferromagnetism with $T_C{\sim}$320 K, based on both magnetization and resistance measurements. The coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. The anomalous Hall effect was observed, indicating spin polarization of the carriers. Hysteresis has been observed in both magnetoresistance and Hall measurements. The current-voltage characteristics of a $MnGeP_2$ film grown on an n-type GaAs substrate display semiconducting behavior.