• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.94-98
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• 2000

Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

• Structural Engineering and Mechanics
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• v.60 no.2
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• pp.251-269
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• 2016

In common structural systems, there are some limitations to provide adequate lateral stiffness, high ductility, and architectural openings simultaneously. Consequently, the concept of T-Resisting Frame (TRF) has been introduced to improve the performance of structures. In this study, Configuration of TRF is a Vertical I-shaped Plate Girder (V.P.G) which is placed in the middle of the span and connected to side columns by two Horizontal Plate Girders (H.P.Gs) at each story level. System performance is improved by utilizing rigid connections in link beams (H.P.Gs). Plastic deformation leads to tension field action in H.P.Gs and causes energy dissipation in TRF; therefore, V.P.G. High plastic deformation in web of TRF's members affects the ductility of system. Moreover, in order to prevent shear buckling in web of TRF's members and improve overall performance of the system, appropriate criteria for placement of web stiffeners are presented in this study. In addition, an experimental study is conducted by applying cyclic loading and using finite element models. As a result, hysteresis curves indicate adequate lateral stiffness, stable hysteretic behavior, and high ductility factor of 6.73.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.907-909
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• 2009

Low voltage operated top gated polymer transistors were fabricated with a high permittivity polymer, P(VDF-TrFE) and F8T2 as a gate dielectric and semiconducting layer, respectively. The operating voltage of transistors was effectively reduced under -10 V and typical threshold voltages were as low as -1 ~ -4 V with the reasonable charge carrier mobility of $10^{-3}cm^2$/Vs for the amorphous polymer. The large hysteresis in transfer curve was improved effectively by annealing at low temperature.

• Journal of Satellite, Information and Communications
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• v.10 no.2
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• pp.75-79
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• 2015

In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the ion beam alignment method on the a-C:H thin film. The suitable inorganic thin films for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film were studied. An excellent voltage-transmittance (V-T) and response time curve of the ion beam aligned FFS-LCD was observed with oblique ion beam exposure on the a-C:H thin films. Also, the V-T hysteresis characteristics of the ion beam-aligned FFS-LCD with IB exposure on the a-C:H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide surface.

• Proceedings of the KIEE Conference
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• 2005.11b
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• pp.261-263
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• 2005

In the extra and ultra high voltage system, the coupling capacitor voltage transformer (CCVT) measures the primary voltage with a small scale of voltage transformer (VT). However, the CCVT generates errors caused by the hysteresis characteristics of iron core and by the ferroresonance, inevitably. This paper proposes a compensation algorithm for the secondary voltage of a CCVT considering the hysteresis characteristics of an iron core. The proposed algorithm calculates the seconda교 current of a VT by summing the current flowing the ferroresonance circuit and the burden current; it estimates the secondary voltage of a VT; then the core flux is calculated by integrating of the secondary voltage of a VT, then estimates the exciting current using ${\lambda}-i$ characteristic of the core. The method calculates a primary voltage of a VT considering the estimated primary current. Finally, the correct voltage is estimated by compensating the voltage across the inductor and capacitor. The performance of the proposed algorithm was tested in a 345kV transmission system. The test results show that the proposed method can improve the accuracy of the seconda교 voltage of a CCVT.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.504-507
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• 2002

We investigated electro-optic and ionic properties of twisted nematic cells by using control of chiral pitch. These properties are observed in practical experiment and simulations. C-V and V-T curve characteristics were obtained from three types of cells with d/p. It is shown that d/p ratio of short cells exhibit faster response time improved by 20% than normal cell. Also, inter-gray response time is improved each rise time and decay time. And, the increase of saturation voltage is happened because of the small twist angel change from initial state at high voltage near 5V. To compensate for longer black level tail, gamma curve index was varied from g = 2.2 to g = 2.7 in module status. Additionally, adding chiral dopant into TN cells improved ionic characteristics such as increasing VHR, Ion density and DC Hysteresis were decreased..

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1274-1276
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• 1993

The silicon-nitride films formed by laser CVD method are used for passivating GaAs surfaces. The electrical Properties of metal-insulator-GaAs structure are studied to determined the interfacial characteristics by C-V curves and deep level transient spectroscopy(DLTS). The SiN films are photolysisly deposited from $SiH_4\;and\;NH_3$ in the range of $100^{\circ}C-300^{\circ}C$ on P type, (100) GaAs. The hysteresis is reduced and interface trap density is lowered to $10^{12}-10^{13}$ at $100^{\circ}C-200^{\circ}C$. The surface leakage current is studied too. The passivated GaAs have a little leakage current compared to non passivated GaAs.

• Journal of the Korean Magnetics Society
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• v.5 no.4
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• pp.304-308
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• 1995

In order to measure magnetic field difference, we have constructed a fluxgate magnetometer which is based on the measurement of apparent coreci ve field strength from the magnetizing current of two sensors. 'Co-based amorphous ribbon, which has square shape of ac hysteresis loop, was used as core material. Two sensors have 315 turns of the primary and the secondary windings respectively, and core size of 2 mm wide and 30 mm long. The primary windings are connected parallel to measure external magnetic field difference and the secondary windings serieally for the averaged magnetic induction of the cores. The constructed magnetometer could measure magnetic field difference with sensitivity of $1.6{\times}10^{6}V/T$ and resolution of 1 nT at 1 Hz bandwidth.

• Journal of the Korean institute of surface engineering
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• v.56 no.6
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• pp.380-385
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• 2023

In this study, an MPB PMNT system containing 0.05 to 0.10 wt.% BaTiO₃ was synthesized using a traditional chemical method and its pyroelectricity was investigated. Pyroelectricity, dielectricity, and ferroelectricity of the synthesized BaTiO₃-PMNT system were analyzed by heat treatment at 1240~1280 ℃ for 4 hours to evaluate its applicability as a pyroelectric sensor. Unlike the simple ABO₃ ferroelectric, the BaTiO₃-doped PMNT system exhibited phase transition characteristics over a wide temperature range typical of complex perovskite structures. Although no dramatic change could be confirmed depending on the amount of BaTiO₃ added, stable pyroelectricity was maintained near room temperature and over a wide temperature range. When the amount of BaTiO₃ added increased from 0.05BaTiO₃-PMNT to 0.10BaTiO₃-PMNT, the electric field slightly increased from 5.00×10³ kV/m to 6.75×10³ kV/m, and the maximum value of remanent polarization slightly increased from 0.223 C/m² to 0.234 C/m². The pyroelectric coefficients of 0.05BaTiO₃-PMNT and 0.10BaTiO₃- PMNT at room temperature were measured to be ~0.0084 C/m²K and ~0.0043 C/m²K, respectively. The relaxor ferroelectric properties of the BaTiO₃-PMNT system were confirmed by analyzing the plot of K_max/K versus (T-T_max)^γ. The BaTiO₃-doped MPB PMNT system showed a distinct pyroelectric performance index at room temperature, and the values were F_v ~ 0.0362 m²/C, F_d ~ 0.575×10^-4 Pa^-1/2.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.65-69
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• 2004

We synthesized photoalignment material of high thermal resistance with hydroxyl aromatic polyimide, and studied the liquid crystal (LC) aligning capabilities on the photopolymer layers. Also, electro-optical (EO) performances for the twisted-nematic (TN)-liquid crystal display (LCD) photoaligned with linearly polarized UV exposure were investigated. A good LC alignment with UV exposure on the photopolymer surface can be obtained. However, the low pretilt angles were obtained below 1$^{\circ}$. The Voltage-transmittance (V-T) curve without backflow bounce in the photoaligned TN cell with UV exposure was observed. The response time of photoaligned TN cell was measured about 24 ms. Finally, The photoaligned TN cell has few hysteresis, and shows the residual DC voltage that is less.