• Title/Summary/Keyword: V-Model

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Modified SPICE BSIM3v3 Model for RF MOSFET IC Design (RF MOSFET IC 설계를 위한 수정된 SPICE BISM3v3 모델)

  • Kim, Jong-Hyuck;Lee, Seong-Hearn;Kim, Young-Wug
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.545-546
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    • 2006
  • The improved model that external capacitances are connected to a conventional BSIM3v3 RF Macro model with Rg and Rsub is developed in this paper. The extracted external capacitances and resistances are modeled by scalable fitting equations. The modeled S-parameters of $0.13{\mu}m$ NMOSFET agree well with measured ones from 10MHz to 10GHz, verifying the accuracy of the improved model.

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Temperature Dependence of the Vibration-Vibration Energy Transfer for HF(v = n) + $H_2$(v = 0) and DF(v = n) + $D_2$(v = 0)

  • Lee, Chang-Soon;Kim, Yoo-Hang
    • Bulletin of the Korean Chemical Society
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    • v.13 no.1
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    • pp.11-17
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    • 1992
  • Vibration-to-vibration energy transfer probabilities for $HF(v=n)+H_2(v=0){\to}HF(v=n-1)+H_2(v=1)$ and $DF(v=n)+D_2(v=0){\to}DF(v=n-1)+D_2(v=1)$ including both the vibration-to-vibration and translation (V-V, T) and vibration-to-vibration and rotation (V-V, R) energy transfer paths have been calculated semiclassically using a simplified collision model and Morse-type intermolecular interaction potential. The calculated results are in reasonably good agreement with those obtained by experimental studies. They also show that the transition processes for $HF(v=1-3)+H_2(v=0){\to}HF(v=0-2)+H_2(v=1)$ and $DF(v=1,\;4)+D_2(v=0){\to}DF(v=0,\;3)+D_2(v=1)$ are strongly dependent on the V-V, T path at low temperature but occur predominantly via the V-V, R path with rising temperature. The vibration-to-vibration energy transfer for $HF(v=4)+H_2(v=0){\to}HF(v=3)+H_2(v=1)$ and $DF(v=2-3)+D_2(v=0){\to}DF(v=1-2)+D_2(v=1)$ occur predominantly via V-V, R path and V-V, T path through whole temperatures, respectively.

The Analysis Results of Lightning Overvoltages by EMTP for Lightning Protection Design of 500kV Substations

  • Ju Hyung-Jun;Lee Heung-Ho
    • KIEE International Transactions on Power Engineering
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    • v.5A no.4
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    • pp.366-370
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    • 2005
  • To meet increasing power demand, 500 kV power systems are under consideration in the regions of some Middle Asian countries. As the power system voltage becomes higher, the cost for the power system insulation increases significantly. 500 kV transmission systems will become the basis of a region's power system and they require much higher system reliability. Consequently, by the methods of limiting overvoltages effectively, a reasonable insulation design and coordination must be accomplished. In particular, the Substations must be constructed to be of outdoor type. In order to determine the various factors for the insulation design, the EMTP (Electro-magnetic transient program) is used for the magnification of transient phenomena of the 500 kV systems in the planned network. In this paper, we will explain the calculation results of lightning overvoltages by the EMTP for lightning protection design for the 500 kV substations. To obtain reliable results, the multi-story tower model and EMTP/TACS model are introduced for the simulation of dynamic arc characteristics.

FORMATION OF LINE PROFILE: SEI METHOD

  • CHOE SEUNG-URN;KANG MIN-YOUNG;KIM KYUNG-MEE
    • Journal of The Korean Astronomical Society
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    • v.29 no.2
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    • pp.93-105
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    • 1996
  • We have solved the radiative transfer problem using a Sobolev approximation with an escape probability method in case of the supersonic expansion of a stellar envelope to an ambient medium. The radiation from the expanding envelope turns out to produce a P-Cygni type profile. In order to investigate the morphology of the theoretical P-Cygni type profile, we have treated $V_\infty,\;V_{sto},\;\beta$ (parameters for the velocity field), it and E(parameter for collisional effect) as model parameters. We have investigated that the velocity field and the mass loss rate affect the shapes of the P-Cygni type profiles most effectively. The secondarily important factors are $V_\infty,\;V_{sto}$. The collisional effect tends to make the total flux increased but not so much in magnitude. We have infered some physical parameters of 68 Cyg, HD24912, and $\xi$ persei such as $V_\infty,\;M$ from the model calculation, which shows a good agreenment with the observational results.

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A Study on Threshold Voltage and I-V Characteristics by considering the Short-Channel Effect of SOI MOSFET (SOI MOSFET의 단채널 효과를 고려한 문턱전압과 I-V특성 연구)

  • 김현철;나준호;김철성
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.8
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    • pp.34-45
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    • 1994
  • We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

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A Design of Ion-Implanted GaAs MESFET's Having High Transconductance Characteristics (이온 주입공정에 의한 고 GaAs MESFET의 설계)

  • Lee, Chang Seok;Shim, Gyu-Hwan;Park, Hyung Moo;Park, Sin-Chong
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.6
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    • pp.789-794
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    • 1986
  • The current-voltage characteristics of ion-implanted GaAs MESFET's have been simulated by using the velocity saturation model. Using this model, a MESFET with threshold voltage of -0.5V and transconductance of 460 mS/mm is designed. To implement high transconductance MESFET's, low energy ion-implantation (20 keV) and RTP(Rapid Thermal Process) activation ($575^{\circ}C$, 5sec) processes are required.

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Numerical evaluation of the effect of multiple roughness changes

  • Abdi, Daniel S.;Bitsuamlak, Girma T.
    • Wind and Structures
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    • v.19 no.6
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    • pp.585-601
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    • 2014
  • The effect of multiple roughness changes close to a building site was examined through three dimensional computational fluid dynamics (CFD) simulations conducted in a virtual boundary layer wind tunnel (V-BLWT). The results obtained were compared with existing wind speed models, namely ESDU-82026 and Wang and Stathopoulos (WS) model. The latter was verified by wind tunnel tests of sixty nine cases of multiple roughness patches, and also with a simplified 2D numerical model. This work extends that numerical study to three dimensions and also models roughness elements explicitly. The current numerical study shows better agreement with the WS model, that has shown better agreements with BLWT tests, than the ESDU model. This is in contrast to previous results of Wang and Stathopoulos, who concluded that CFD shows better agreement with the ESDU model. Many cases were simulated in a V-BLWT that has same dimensions as BLWT used in the original experiment and also in a reduced symmetrical version (S-BLWT) that takes advantage of regular arrangement of roughness blocks. The S-BLWT gives results almost identical to V-BLWT simulations, while achieving significant reduction on computational time and resources.

Adsorption Characteristics of As and Se Ions by HTMAB Modified Anthracite (HTMAB로 표면처리된 안트라사이트에 의한 비소 및 셀렌 이온의 흡착 특성)

  • Kim, Jeung-Bea
    • Journal of Environmental Science International
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    • v.27 no.3
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    • pp.167-177
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    • 2018
  • The removal characteristics of As and Se ions from aqueous solution by hexadecyl trimethyl ammonium bromide (HTMAB) modified anthracite (HTMAB-AT) were investigated under various conditions of contact time, pH and temperature. When the pH is 6, the zeta potential value of anthracite (AT) is -24 mV and on the other hand, the zeta potential value of the HTMAB-AT is +44 mV. It can be seen that the overall increase of about 60 mV. Increasing the (+) potential value indicates that the surface of the adsorbent had a stronger positive charge, so adsorption for the anion metal was increased. The isotherm data was well described by Langmuir and Temkin isotherm model. The maximum adsorption capacity was found to be 7.81 and 6.89 mg/g for As and Se ions from the Langmuir isotherm model at 298 K, respectively. The kinetic data was tested using pseudo first and pseudo second order models. The results indicated that adsorption fitted well with the pseudo second order kinetic model. The mechanism of the adsorption process showed that adsorption was dependent on intra particle diffusion model according to two step diffusion. The thermodynamic parameters(${\Delta}G^{\circ}$, ${\Delta}H^{\circ}$, and ${\Delta}S^{\circ}$) were also determined using the equilibrium constant value obtained at different temperatures. The thermodynamic parameters indicated that the adsorption process was physisorption, and also an endothermic and spontaneous process.

Assessment of RANS Models for 3-D Flow Analysis of SMART

  • Chun Kun Ho;Hwang Young Dong;Yoon Han Young;Kim Hee Chul;Zee Sung Quun
    • Nuclear Engineering and Technology
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    • v.36 no.3
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    • pp.248-262
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    • 2004
  • Turbulence models are separately assessed for a three dimensional thermal-hydraulic analysis of the integral reactor SMART. Seven models (mixing length, k-l, standard $k-{\epsilon},\;k-{\epsilon}-f{\mu},\;k-{\epsilon}-v2$, RRSM, and ERRSM) are investigated for flat plate channel flow, rotating channel flow, and square sectioned U-bend duct flow. The results of these models are compared to the DNS data and experiment data. The results are assessed in terms of many aspects such as economical efficiency, accuracy, theorization, and applicability. The standard $k-{\epsilon}$ model (high Reynolds model), the $k-{\epsilon}-v2$ model, and the ERRSM (low Reynolds models) are selected from the assessment results. The standard $k-{\epsilon}$ model using small grid numbers predicts the channel flow with higher accuracy in comparison with the other eddy viscosity models in the logarithmic layer. The elliptic-relaxation type models, $k-{\epsilon}-v2$, and ERRSM have the advantage of application to complex geometries and show good prediction for near wall flows.

Application of Flory-Treszczanowicz-Benson model and Prigogine-Flory-Patterson theory to Excess Molar Volumes of Isomers of Propanol with Cyclohexane or n-Hexane

  • Gahlyan, Suman;Verma, Sweety;Rani, Manju;Maken, Sanjeev
    • Korean Chemical Engineering Research
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    • v.56 no.4
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    • pp.536-541
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    • 2018
  • Excess molar volumes ($V_m^E$) of binary mixtures of 1-propanol or 2-propanol (1) + cyclohexane or n-hexane (2) were measured with V-shaped dilatometer at 303.15 K. The $V_m^E$ data for these mixtures varied as: 2-propanol > 1-propanol and were higher for cyclohexane than n-hexane for both propanol systems. The experimental data were correlated with Redlich-Kister polynomial. The $V_m^E$ data were interpreted qualitatively as well as quantitatively in terms of Flory-Treszczanowicz-Benson model and Prigogine-Flory-Patterson theory. Both models correctly described the sign and shape of $V_m^E$ vs $x_1$ curves. The values calculated by both the models agree well with the experimental data.