• 제목/요약/키워드: V-I tracer

검색결과 13건 처리시간 0.032초

Solar cell 특성 parameter 추출용 V-I tracer에 관한 연구 (A study on the V-I tracer to abstract the characteristic parameter of solar cell)

  • 박상수;이석주;서효룡;박민원;유인근
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1966-1967
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    • 2007
  • Photovoltaic(PV) power generation system [1-2] has been extensively studied and watched with keen interest as a clean and renewable power source. So hardware and software studies strongly indicate the feasibility of commercially producing a low cost, user-friendly solar cell curve tracer. Generally, V-I curve tracer indicates only the commonly used solar cell parameters. However, with the conventional V-I curve tracer it is almost impossible to abstract the more detail parameters of solar cell ; A, Rs, and Rsh, which satisfies the user, who aims at the analysis of the development PV power generation system; advanced simulation. In this paper, the proposed method gives us the satisfactory results to abstract the detail parameters of solar cell ; A, Rs, and Rsh

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A Novel Simple Method to Abstract the Entire Parameters of the Solar Cell

  • Park, Minwon;Yu, In-Keun
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • 제4B권2호
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    • pp.86-91
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    • 2004
  • PV power generation, which directly converts solar radiation into electricity, contains numerous significant advantages. It is inexhaustible and pollution-free, silent, contains no rotating parts, and has size-independent electricity conversion efficiency. The positive environmental effect of photovoltaics is that it replaces the more polluting methods of electricity generation or that it provides electricity where none was available before. This paper highlights a novel simple method to abstract the entire parameters of the solar cell. In development, design and operation of PV power generation systems, a technique for constructing V-I curves under different levels of solar irradiance and cell temperature conditions using basic characteristic values of the PV module is required. Everyone who has performed manual acquisition and analysis of solar cell I versus V data would agree that the job is tedious and time-consuming. A better alternative is to use an automated curve tracer to print out the I versus V curves and compute the four major parameters; $V_{oc}$, $I_{sc}$, FF, and . Generally, the V-I curve tracer indicates only the commonly used solar cell parameters. However, with the conventional V-I curve tracer it is almost impossible to abstract the more detailed parameters of the solar cell; A, $R_{s}$ and $R_{sh}$ , which satisfies the user, who aims at the analysis of the development of the PV power generation system, that being advanced simulation. In this paper, the proposed method provides us with satisfactory results to enable us to abstract the detailed parameters of the solar cell; A, $R_s$ and $R_{sh}$.>.

Rutile 단결정에서 산소의 확산과 점결합 (Oxygen Diffusion and Point Defects in Single Crystal Rutile)

  • 김명호;박주석;변재동
    • 한국세라믹학회지
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    • 제28권12호
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    • pp.989-995
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    • 1991
  • By means of the secondary ion mass spectrometer, the tracer diffusion of oxygen in rutile single crystal was measured as function of temperature and oxygen partial pressure. The tracer diffusivity was determined from the depth profile of 18O. The Po2 dependence of D suggests that the dominant defects in TiO2-y are oxygen vacancies (V{{{{ { ‥} atop { o} }}) and interstitial titanium ions (Ti{{{{ {‥‥} atop {i} }}). The doubly ionized oxygen vacancies are prominent at low temperature and Po2. However, the tetravalent interstitial titanium ions predominate at teperature above 120$0^{\circ}C$.

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역전파 신경망을 이용한 고전력 반도체 소자 모델링 (Modeling High Power Semiconductor Device Using Backpropagation Neural Network)

  • 김병환;김성모;이대우;노태문;김종대
    • 대한전기학회논문지:시스템및제어부문D
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    • 제52권5호
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    • pp.290-294
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    • 2003
  • Using a backpropagation neural network (BPNN), a high power semiconductor device was empirically modeled. The device modeled is a n-LDMOSFET and its electrical characteristics were measured with a HP4156A and a Tektronix curve tracer 370A. The drain-source current $(I_{DS})$ was measured over the drain-source voltage $(V_{DS})$ ranging between 1 V to 200 V at each gate-source voltage $(V_{GS}).$ For each $V_{GS},$ the BPNN was trained with 100 training data, and the trained model was tested with another 100 test data not pertaining to the training data. The prediction accuracy of each $V_{GS}$ model was optimized as a function of training factors, including training tolerance, number of hidden neurons, initial weight distribution, and two gradients of activation functions. Predictions from optimized models were highly consistent with actual measurements.

THE CHEMICAL PROPERTIES OF PG QUASARS

  • 신재진;우종학
    • 천문학회보
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    • 제37권2호
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    • pp.74.2-74.2
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    • 2012
  • Metallicity is an important tracer of star formation in galaxy evolution. Based on the flux ratios of broad emission lines, AGN metallicity has shown a correlation with AGN luminosity. However, it is not clear what physical parameter drives the observed correlation. Using a sample 69 Palomar-Green QSOs at low-z (z<0.5), we determine BLR gas metallicity from emission line flux ratios, i.e., N V1240/C IV1549, (Si IV1398+O IV1402)/C IV1549 and N V1240/He II1640 based on the UV spectra from the HST and IUE archives. We compare BLR gas metallicity with various AGN properties, i.e., black hole mass, AGN luminosity and Eddington ratio, in order to investigate physical connection between metal enrichment and AGN activity. In contrast to high-z QSOs, which show the correlation between metallicity and black hole mass, we find that the metallicity of low-z QSOs correlates with Eddington ratio, but not with black hole mass, suggesting that metallicity enrichment mechanism is different between low-z and high-z.

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Preparation of 125

  • Kim, Byoung-Soo;Kim, Eun-Jung;Lee, Hae-June;Han, Sang-Jin;Choi, Tae-Hyun;Lee, Yun-Sil;Cheon, Gi-Jeong
    • Bulletin of the Korean Chemical Society
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    • 제31권9호
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    • pp.2649-2655
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    • 2010
  • $PKC{\delta}$-catalytic V5 Heptapeptide (FEQFLDI, FP7) interacts with heat shock protein 27 (HSP27) and inhibits HSP27-mediated resistance to cell death against various stimuli including radiation therapy. Here, we prepared radio-iodinated heptapeptide and further investigated its uptake properties in HSP27 expression cells. Peptide sequence of FP7 and a negative control peptide (WSLLEKR, QP7) was modified by substituting their C-terminus residue to tyrosine (FP6Y and QP6Y) to label radio-iodine. Iodinated peptides were confirmed by LC mass analysis with cold iodine reaction mixture. Accumulation of [$^{125}I$]iodo-FP6Y and [$^{125}I$]iodo-QP6Y in NCI-H1299 cell line, with higher level of HSP27, and NCI-H460 cell line, with lower level of HSP27, was measured by NaI(Tl) scintillation counter. The modification of substituting C-terminus residue of FP7 to tyrosine (FP6Y) did not affect its interaction with HSP27. Accumulation of [$^{125}I$]iodo-FP6Y in NCI-H1299 cells was 3 fold higher than in NCI-H460 cells. The novel radio-iodinated FP6Y would be used as a tracer for targeting HSP27 protein.

A Study on Distributions of Boron Ions Implanted by Using B and BF2 Dual Implantations in Silicon

  • Jung, Won-Chae
    • Transactions on Electrical and Electronic Materials
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    • 제11권3호
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    • pp.120-125
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    • 2010
  • For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

프레넬 렌즈를 이용한 집광 시 단결정 실리콘 태양전지의 전기적 특성 (Electrical Characteristics of Mono Crystalline Silicon Solar Cell for Concentrating PV System using Fresnel Lenses)

  • 강경찬;강기환;유권종;허창수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.218-219
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    • 2007
  • Silicon feed stock shortage have acted as major restraints for growth of photovoltaic industry. Concentrating photovoltaic (CPV) system will reduce the use of silicon PV materials. This paper presents the application possibility of mono-crystalline silicon solar cell, which has increased in market share, for PV concentrator. We measured the power of solar cell using sun simulator and I-V curve tracer and compared the results. The comparison of results showed that the concentrated solar cell generated the power more approximately 7 times than without concentration in spite of non-heat sink. If CPV technology included heat sink combines already developed PV tracking system, it will have a merit economically.

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단결정 실리콘 태양전지의 집광형 시스템으로의 적용 가능성 (Application Possibility of Mono-Crystalline Silicon Solar Cell for Photovoltaic Concentrating System)

  • 강경찬;강기환;유권종;허창수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.22-23
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    • 2007
  • We tried to find the possibility of mono-crystalline silicon solar cell for photovoltaic concentrating system which is major cost portion for PV system using fresnel lens. With solar simulator and I-V curve tracer, we analyzed maximum output characteristics and measured the temperature of concentrated area using infrared camera. Because of temperature increase, there was no merit when concentrating. But at low radiant power, it showed more efficient operation. The combination of heat-sink technology and tracking system to our concentrating PV system would give better performance results.

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Geant4 코드를 사용한 인체팬텀 선량평가 검증 (Verification of Dose Evaluation of Human Phantom using Geant4 Code)

  • 장은성;최지훈
    • 한국방사선학회논문지
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    • 제14권5호
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    • pp.529-535
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    • 2020
  • Geant4는 C++ 언어사용에서 windows 운영체계와 호환이 가능해져, DICOM이나 소프트웨어를 연계하는 인터페이스 기능이 가능해졌다. 기하학적 고형물에 의해 인체 장기를 나타내는 팬텀은 치료나 진단에서 선량 계획과 같은 의학 용도에 널리 사용된다 방사선 방호 목적을 위해서는 에너지가 몇 keV의 일때 설명의 유효성을 보여주는 것일 여전히 필요하다. 본 연구에서는 Geant4 시뮬레이션을 통해 저 keV부터 고 keV까지 다양하게 에너지를 선택하여 인간 팬텀중 일부분을 선택하여 광자 병렬 평면 필드에서 조사했을 때 그 장기에 대한 방사선량을 구하고 Zankl의 승인된 방법에 의해 얻은 결과에 대해 결과를 비교 검증하고자 한다. 몬테카롤로 코드를 사용하여 장기 선량을 평가하는 것의 중요성은 시뮬레이션의 다양한 묘사 및 특성에 의해 중성자, 양성자, 파온 등과 같은 빔의 여러 가지 유형의 입자와 Gev와 같은 높은 에너지에도 적합하다는 것을 확인하였다.