• Journal of the Korean Chemical Society
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• v.43 no.4
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• pp.407-411
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• 1999

Studies have been carried out on the fabrication of PPy/GC and PPy/Pt electrode modified with polypyrrole film and determination of Cr(VI) by using 3-electrode system with modified electrodes. Modified electrodes were able to easily fabricated by cyclic voltammetry scanned from +1.0V to -1.0V(vs. Ag/AgCl) at 50 mV/sec. Film thickness could be controlled at same condition by the number of cycling up to 26 times. Reduction behaviour of Cr(VI) at PPy/GC electrode could be seen at wide potential ranges from +0.6V to -0.5V(vs. Ag/AgCl), and maximum reduction peak potential of the ion was observed at -0.25V(vs.Ag/AgCl). Calibration graph at its potential was linear from 0.1 ppm to 80.O ppm. Slope factor and relative coefficient were 1.75 mA/ppm and 0.998, respectively. Reduction behaviour of Cr(VI) at PPy/Pt electrode was similar to PPy/GC electrode, Calibration graph was linear from l.0 ppm to 60.0 ppm. Slope factor and relative coefficient were 0.5mA/ppm and 0.923, respectively. But PPy/GC modified electrode had about 3 times higher sensitivity than PPy/Pt modified electrode. Reduction behaviour of Cu(II), As(IlI), Pb(II), and Cd(II) couldn't be seen at PPy/GC electrode,Its metals had not lnterfered with Cr (VI) determination.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.146-153
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• 2006

We have been investigating InGaAs HEMTs as a future high-speed and low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing $(L_{side})$ on the logic performance of 50 nm $In_{0.7}Ga_{0.3}As$ As HEMTs. We have found that $L_{side}$ has a large influence on the electrostatic integrity (or short channel effects), gate leakage current, gate-drain capacitance, and source and drain resistance of the device. For our device design, an optimum value of $L_{side}$ of 150 nm is found. 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs with this value of $L_{side}$ exhibit $I_{ON}/I_{OFF}$ ratios in excess of $10^4$, subthreshold slopes smaller than 90 mV/dec, and logic gate delays of about 1.3 ps at a $V_{CC}$ of 0.5 V. In spite of the fact that these devices are not optimized for logic, these values are comparable to state-of-the-art MOSFETs with similar gate lengths. Our work confirms that in the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs FETs hold considerable promise.

• 전기의세계
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• v.23 no.6
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.174-175
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• 2002

A ramp-type tunneling magnetoresistance (TMR) junction having structure NiO(60 nm)/pinned Co(10 nm)MiO(60 nm)/barrier SrTiO$_3$(2-10 nm)/free NiFe(10 nm) with the 15 degree slope was investigated. We obtained nonlinear I(V) characteristics for ramp-type tunneling junctions that have distinctive difference with and without applied magnetic field. In the barrier SrTiO$_3$ thickness of 4 nm, the TMR was about 52% at a bias voltage of 50 mV. (omitted)

• 전기의세계
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• v.28 no.9
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• pp.43-50
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• 1979

Silicon nitride films were chemically deposited on silicon substrates by reacting SiCl$_{4}$ and NH$_{3}$ in a nitrogen atmosphere at 700~1100 .deg.C. The deposition rate increased rapidly with deposition temperature upto about 1000 .deg.C, and became less temperature dependent above this temperature. The etch rate of films in buffered HF solution decreased, with an increase of deposition temperature, and a heat treatment at a temperature higher than that of the deposition considerably reduced the etch rate. It indicates that the heat treatment resulted in a densification of the films. Surface charge density of 3~4 * 10$^{11}$ /cm$^{2}$ was determined from the C-V characteristics of MNS diode, and it was also found that surface charge density depended on deposition temperature, but not film thickness. The current-voltage characteristics displayed a logI-V$^{1}$2/ dependence in the temperature range of 300~500.deg.K. Measurement of the slope of this characteristics and its dependence on temperature and bias polarity suggest that conduction in sili con nitride films arises from the Poole-Frenkel mechanism.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.12A
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• pp.2002-2007
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• 1999

In this paper, the n-channel poly-Si thin-film transistors (poly-Si TFT's) formed by solid phase crystallization (SPC) on glass were investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, mobility, leakage current, threshold voltage, and subthreshold slope. It is done to decide to be applied on TFT-LCD with large-size and high density. In n-channel poly-Si TFT with 2, 10, 25$\mu\textrm{m}$ of channel length, the field effect mobilities are 111, 126 and 125 $\textrm{cm}^2$/V-s and leakage currents are 0.6, 0.1, and 0.02 pA/$\mu\textrm{m}$, respectively. Low threshold voltage and subthreshold slope, and good ON-OFF ratio are shown, as well. Thus, the poly-Si TFT’s used by SPC are expected to be applied on TFT-LCD with large-size and high density, which can integrate display panel and peripheral circuit on a large glass substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.267.1-267.1
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• 2016

본 연구에서는 nematic 액정의 종류 중 하나인 5CB (4-Cyano-4'-pentylbiphenyl) 물질을 박막 트랜지스터 (TFT)의 passivation 층으로 사용했을 때 그 전기적 특성향상을 확인하였다. RF-magnetron sputtering법으로 증착된 비정질 InGaZnO 박막을 활성층으로 사용한 TFT를 제작하여 그 활성층 위에 drop형식으로 passivation 하였다. 그 결과, drain current (I_DS)가 약 10배 정도 증가하고, linear region(V_D=0.5V)에서 mobility와 subthreshold slope(SS)이 각각 6.7에서 12.2, 0.3에서 0.2로 향상되는 것이 보였다. 이것은 gate bias가 인가되었을 때 freedericksz 전이를 통한 액정의 배향과 이때 형성된 dipole 형성에 의한 것으로 보이며, 이러한 LC의 배향은 편광현미경을 통하여 표면과 수직으로 배향한다는 사실을 확인 할 수 있었고 이 LC-passivation된 a-IGZO TFT의 전기적 특성의 향상에 대한 mechanism을 제시하였다. 그리고 배향한 LC가 가지는 dipole에 의해 bias stress 상황에서 독특한 electron trapping과 recovery의 증폭효과가 나타났다. V_G=+20V의 positive gate bias stress를 1000s동안 가했을 때, passivation되지 않은 a-IGZO TFT의 경우 +4V의 threshold voltage shift(${\Delta}V$_TH)가 발생되었고, 바로 -20V의 negative gate bias를 30s간 가해주었을 때 -2.5V의 ${\Delta}V$_TH가 발생하였다. 반면 LC-passivation된 a-IGZO TFT의 경우 각각 +5V와 -4V의 ${\Delta}V$_TH로 더 큰 변화를 가져왔다. 이러한 LC에 의한 electron trapping/recovery 증폭효과에 대한 model을 제시하였다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.1971-1978
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• 2016

In this paper, electrical and physical characteristics associated with the ionization growth of soil under impulse voltages in a coaxial cylindrical electrode system to simulate a horizontally-buried ground electrode were experimentally investigated. The results were summarized as follows: Transient ground resistances decreased significantly by soil ionization. The voltage-current (V-I) curves for non-ionization in soil lined up in a straight line with the nearly same slope that is the ground resistance, but they showed a 'cross-closed loop' of ${\infty}$-shape under ionization. The conventional ground resistance and equivalent soil resistivity were inversely proportional to the peak value of injected impulse currents. On the other hand, the equivalent ionization radius and time-lag to the maximum value of ionization radius were increased with increasing the incident impulse voltages. An analysis method for the transient ground resistances of the ground electrode based on the ionization phenomena was proposed. The proposed method can be applied to analyze the transient performances of grounding systems for lightning protection in power system installations.

• The Bulletin of The Korean Astronomical Society
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• v.45 no.1
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• pp.47.1-47.1
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• 2020

Multi-band photometry provides an advantage in being able to perform taxonomic classification analysis on a large number of asteroids in a much shorter period of time than spectroscopy. We observed main-belt asteroids using Korea Microlensing Telescope Network (KMTNet) in CTIO during the summer seasons in the southern hemisphere, mostly in December 2015, 2016 and 2017 with two visible photometric systems, SDSS (g, r, i, and z), and Johnson-Cousins (B, V, R, and I). Targets were selected for the asteroids which had already been classified based on Bus-Binzel taxonomy (Bus & Binzel, 2002) and DeMeo taxonomy (DeMeo et al. 2009). Not only the targets but also numerous serendipitously observed asteroids were identified. In summary, 6817 and 5456 known objects, including 307 and 233 already classified asteroids were observed with SDSS and Johnson-Cousins systems, respectively. Using principal component analysis, the three major asteroid complexes and a class, S-, C-, and X-complexes and V class are found to be well separated in the principal component plane (spectral slope and 1 micron absorption depth) with both filter systems. We will present and discuss the results of our newly proposed three-dimensional color taxonomy for asteroids using the whole dataset (Roh et al., to be submitted).

• Journal of the Korean Chemical Society
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• v.28 no.5
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• pp.315-322
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• 1984

The dependence of polarographic parameters on the pressure for the reduction of In(III), Cr(III), Cd(II), Pb(II), Mn(II), Co(II), Tl(I) in 0.1M KCl aqueous solution at the dropping mercury electrode have been discussed. In this experiment the temperature varied from $25^{\circ}C\;to\;35^{\circ}C$ and the pressure ranges from 1 atmosphere to 1,800 atmospheres. By increasing the pressure the reduction half-wave potentials of all metal ions are shifted markedly to more negative values and the diffusion currents of all metal ions become considerably larger. The slope of the linear relationship of E vs. log[$\frac{id-i)}{i}$] become much larger with increase in pressure, which indicates more irreversible reduction. The temperature coefficient observed over the range of the temperature from $25^{\circ}C\;to\;35^{\circ}C$ are not sensitive with increase in pressure.