• Journal of electromagnetic engineering and science
• /
• 제14권2호
• /
• pp.61-67
• /
• 2014

This paper presents a zero-IF CMOS RF receiver, which supports three channel bandwidths of 5/10/40MHz for LTE-Advanced systems. The receiver operates at IMT-band of 2,500 to 2,690MHz. The simulated noise figure of the overall receiver is 1.6 dB at 7MHz (7.5 dB at 7.5 kHz). The receiver is composed of two parts: an RF front-end and a baseband circuit. In the RF front-end, a RF input signal is amplified by a low noise amplifier and $G_m$ with configurable gain steps (41/35/29/23 dB) with optimized noise and linearity performances for a wide dynamic range. The proposed baseband circuit provides a -1 dB cutoff frequency of up to 40MHz using a proposed wideband OP-amp, which has a phase margin of $77^{\circ}$ and an unit-gain bandwidth of 2.04 GHz. The proposed zero-IF CMOS RF receiver has been implemented in $0.13-{\mu}m$ CMOS technology and consumes 116 (for high gain mode)/106 (for low gain mode) mA from a 1.2 V supply voltage. The measurement of a fabricated chip for a 10-MHz 3G LTE input signal with 16-QAM shows more than 8.3 dB of minimum signal-to-noise ratio, while receiving the input channel power from -88 to -12 dBm.

• 한국세라믹학회지
• /
• 제50권6호
• /
• pp.551-556
• /
• 2013

AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{\times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{\circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{\circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.

• 천문학회지
• /
• 제48권6호
• /
• pp.357-364
• /
• 2015

We observe ten known 22GHz H₂O maser galaxies during February 19-22, 2011 using the 21 m Tamna telescope of the Korean VLBI Network and a new wide-band digital spectrometer. Simultaneously we searched for 43GHz SiO v = 1, 2, J = 1-0 maser emission. We detect H₂O maser emission towards five sources (M 33, NGC 1052, NGC 1068, NGC 4258, M 82), with non-detections towards the remaining sources (UGC 3193, UGC 3789, Antennae H₂O-West, M 51, NGC 6323) likely due to sensitivity. Our 22GHz spectra are consistent with earlier findings. Our simultaneous 43GHz SiO maser search produced non-detections, yielding - for the first time - upper limits on the 43GHz SiO maser emission in these sources at a 3 σ sensitivity level of 0.018K-0.033K (0.24 Jy-0.44 Jy) in a 1.75 km s⁻¹ velocity resolution. Our findings suggest that any 43GHz SiO masers in these sources (some having starburst-associated H₂O kilomasers) must be faint compared to the 22GHz H₂O maser emission.

• 한국전기전자재료학회논문지
• /
• 제22권5호
• /
• pp.386-389
• /
• 2009

The electrical characteristics and annealing effects of tunneling dielectrics stacked with $SiO_2$ and $Si_{3}N_{4}$ were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_{3}N_{4}/SiO_2/Si_{3}N_{4}$ (NON), $SiO_2/Si_{3}N_{4}/SiO_2$ (ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS (metal-oxide-semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field. Furthermore, the increased tunneling current through engineered tunneling barriers related to high speed operation can be achieved by annealing processes.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.131-131
• /
• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• 한국통신학회논문지
• /
• 제28권3C호
• /
• pp.239-247
• /
• 2003

본 논문에서는 기존에 제안한 바 있는 EHC(Efficient Harmonic-CELP) 부호화기에 기반한 이중 전송률(2.4/4.0 kbps)의 개선된 하모닉-CELP(Improved Harmonic-CELP: IHC) 음성 부호화기를 제안한다. 제안된 IHC는 유/무성음 판별에 따라 유성음에서는 하모닉 추정, 하모닉 양자화, 하모닉 합성 및 잡음 혼합을 통한 자연성 제어 등의 과정을 통해, 무성음에서는 고속 CELP 방식을 통해 음성신호를 부호화/복호화한다. 또한 제안된 IHC는 EHC의 유/무성음 판별과 하모닉 추정 성능을 개선한다. 피치 이득과 에너지 등을 이용한 유/무성음 판별은 프레임 내의 에너지 변화 등에 의해 재판별된다. 하모닉 부호화에서는 첨점 추출과 델타 조정 방법을 이용하여 정확한 하모닉 추정을 하고, 혼합하는 잡음의 대역과 양을 적절하게 조절하여 자연성을 제어한다. 제안된 IHC 부호화기에 성능평가 결과, 비교 부호화기인 HVXC 연산량의 약 40%이내의 연산량으로 우수한 음질을 보임을 확인하였다.

• 마이크로전자및패키징학회지
• /
• 제26권4호
• /
• pp.113-118
• /
• 2019

In this study, we investigated the growth of single-crystallinity α-Ga₂O₃ thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga₂O₃. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga₂O₃ thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 10⁴ cm^-2.

• 천문학회보
• /
• 제37권2호
• /
• pp.141.1-141.1
• /
• 2012

CIBER (Cosmic Infrared Background ExpeRiment) is a sounding-rocket borne experiment which is designed to find the evidence of the First stars (Pop.III stars) in the universe. They are expected to be formed between the recombination era at z ~ 1100 and the most distant quasar (z ~ 8). They have never been directly detected due to its faintness so far, but can be observed as a background radiation at around $1{\mu}m$ which is called the Cosmic Near-Infrared Background (CNB). The CIBER is successfully launched on July 10, 2010 at White Sands Missile Range, New Mexico, USA. It consists of three kinds of instruments. One of them is a LRS (Low Resolution Spectrometer) which is a refractive telescope of 5.5 cm aperture with spectral resolution of 20 ~ 30 and wavelength coverage of 0.7 to $2.0{\mu}m$ to measure the spectrum of the CNB. Since LRS detects not only CNB but also stellar components, we can study their spectral features with the broad band advantage especially at around $1{\mu}m$ which is difficult at ground observations because of the atmospheric absorption by water vapor. I identified around 300 stars from observed six fields. If we can classify their spectral types with SED fitting, we can study their physical conditions of the stellar atmosphere as well as making a stellar catalogue of continuous stellar spectrum.

• 한국재료학회지
• /
• 제20권1호
• /
• pp.47-50
• /
• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• 한국전자파학회논문지
• /
• 제10권7호
• /
• pp.998-1009
• /
• 1999

본 논문에서는 X 밴드 주파수에서 단얼 마이크로스트립 선로 급전방식을 갖는 원형 편파 개구면-패치 안테나(aperture-patch antenna) 및 환 구조 안테나(ring antenna)를 설계, 제작하여 특성을 측정하였다. 개구면-패치 안테나는 동작 대역폭이 매우 넓으며, 환 구조 안테나는 크기가 작아서 대형 배열안테나의 기본 복사소자로 적합하다. 이 두 종류의 안테나에 대하여 VSWR 대역폭과 원형편파 축비(axial ratio)를 개선하기 위한 여러 가지 설계 파라미터의 영향을 분석하였다. 개구면과 환 복사소자는 공진기 모델(cavity mode!)에 근거하여 초기 설계를 하였으며. 원형편파를 발생시키기 위한 개구면 내부의 패치와 환 내부의 스터브(stub) 는 Ensemble 소프트웨어를 사용하여 최적화 하였다. 제작된 안테나는 개구면-패치 안테나의 경우 25 %의 V VSWR 대역폭(3dB 기준)과 1.2 dB의 최소 축비를 가지며, 환 구조 안테나에서는 6.7 %의 VSWR 대역폭과 1.6 dB의 최소 축비를 가진다.