• Bulletin of the Korean Chemical Society
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• v.24 no.10
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• pp.1501-1504
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• 2003

Single-wall carbon nanotubes (SWCN) were integrated in $TiO_2$ film and the beneficial influence on the dyesensitized solar cells in terms of improved photocurrent was studied in the light of static J-V characteristics obtained both under illumination and in the dark, photocurrent transients, IPCE spectra and impedance spectra. Compared with a solar cell without SWCN, it is established that the photocurrent density of the modified cell increases at all applied potentials. The enhanced photocurrent density is correlated with the augmented concentration of electrons in the conduction band of $TiO_2$ and with increased electrical conductivity. Explanations are additionally corroborated with the help of SEM, Raman spectra and dye-desorption measurements.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.211-217
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• 2004

The oxidation behaviors of Ti-10Ta-10Nb alloy and Ti-6Al-4V alloy were studied in dry air atmosphere. Specimens were melted in consumable vacuum arc furnace and homogenized at $1050^{\circ}C$ for 24 h. Hot rolling was performed at $1000^{\circ}C$. Specimens of the alloys were oxidized as the temperature range $400~650^{\circ}C$ for 30 min. The oxidation behavior of the alloys was analysed by optical microscope, SEM/EDX, XRD, XPS and TGA. Immersion test was performed in 1% Lactic acid. In the microscope observation, oxide layer of Ti-10Ta-10Nb alloy was denser and thinner than Ti-6Al-4V's. The weight gains during the oxidation rapidly increased at the temperature above $600^{\circ}C$ in Ti-6Al-4V's alloy and$ 700^{\circ}C$ in Ti-10Ta-10Nb alloy. According to XRD results, oxide layers were composed of mostly $TiO_2$(rutile) phase. It was analysed that the passive film of the Ti alloys consisted of $TiO_2$ through X-ray photoelectron spectroscopy(XPS) analysis.

• Korean Chemical Engineering Research
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• v.44 no.2
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• pp.179-186
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• 2006

Two types of $TiO_2$, nanotube and nanoparticle, were used for the mesoporous coatings by doctor blade technique followed by calcining at $450^{\circ}C$. The coatings were used as working materials for dye-sensitized solar cells (DSCs) later on and their photovoltaic characterization was carried out. The nanoparticle was synthesized from hydrogen titanate nanotube by hydrothermal treatment at $180^{\circ}C$ for 24 hr. The solar energy conversion efficiency (${\eta}$) of DSCs prepared by this nanoparticle reached 8.07％ with $V_{OC}$ (open-circuit potential) of 0.81 V, $I_{SC}$ (short-circuit current) of $18.29mV/cm^2$, and FF (fill factor) of 66.95％, respectively. For the preparation of nanotube, the concentration of NaOH solution varied from 3 M to 5 M. In the case of DSCs fabricated with nanotubes from 3 M NaOH solution, the ${\eta}$ reached 6.19％ with $V_{OC}$ of 0.77 V, $I_{SC}$ of $12.41mV/cm^2$, and FF of 64.49％, respectively. On the other hand, in the case of 5 M solution, the photovoltaic ${\eta}$ was decreased with 4.09％ due to a loss of photocarriers. In conclusion, it is demonstrated that the solar energy conversion efficiency of DSCs made from $TiO_2$ nanoparticle showed best results among those under investigation.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.739-745
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• 2014

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensor utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator, which uses a 3-dB directional coupler at the output and has two complementary output waveguides. A dc switching voltage of ~25 V and an extinction ratio of ~12.5 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf input power, the minimum detectable electric fields are ~8.21, 7.24, and ~13.3 V/m, corresponding to dynamic ranges of ~10, ~12, and ~7 dB at frequencies of 10, 30, and 50 MHz respectively. The sensors exhibit almost linear response for an applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.558-567
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• 2001

본 연구에서는 알콕사이드를 전구물질로 하는 졸겔공정을 이용하여 Bi 과잉 12 mol%의 조성인 B $i_4$ $Ti_3$ $O_{12}$ 박막과 B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$(x=0.1, 0.2, 0.3) 박막을 제조하였다. XPS 분석에 따르면 Ta 치환 x=0.2에서 Bi 4f의 photoemission 곡선이 낮은 결합에너지로 이동하였고 피크 강도가 감소하는 현상이 관측되었다. 이는 x=0.1과 0.2 사이에서 Bi-O 결합이 길어져 인장상태 하에 있었음을 나타내었다. B $i_4$ $Ti_3$ $O_{12}$(BIT) 박막의 유전상수와 유전손실은 100 kHz에서 340, 0.05이었고, B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$ 박막에서 이들 값은 x=0.1에서 가장 높았으며, 각각 480, 0.13이었다. B $i_4$ $Ti_3$ $O_{12}$ 박막의 잔류분극과 항전계는 1.24$\mu$C/$ extrm{cm}^2$, 31.4 kV/cm 이었으나, Ta 치환 x=0.2에서 이들 값은 각각 19.7$\mu$C/$\textrm{cm}^2$, 49.5 kV/cm 에 이르렀다. 또한, B $i_4$ $Ti_3$ $O_{12}$ 박막의 누설전류 밀도는 ~$10^{-6}$ A/$\textrm{cm}^2$ 정도이었으며, Ta 치환은 누설전류를 감소시켜 Ta 치환 x=0.2 이상에서 BIT 박막에 비해 한 차수 정도 낮아졌다. Ta 치환에 따른 B $i_4$ $Ti_3$ $O_{12}$ 전기 물성에서 변화는 Bi-O 결합에서 관측된 인장상태로의 전이와 연관성이 있었으며, 덧붙여 치환에서 생성된 전자에 의한 정공보상이 이에 영향을 끼쳤다. 정공보상이 이에 영향을 끼쳤다.끼쳤다.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1586-1587
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• 2011

염료 감응 태양전지(DSCs)는 최근 큰 발전을 이루고 있지만, 효율개선과 비용절감 등의 과제를 여전히 안고 있다. 염료 감응 태양전지(DSCs)의 효율 상승을 위해 염료, $TiO_2$ 산화물, 투명전극, 전해질 및 Pt 전극에 관한 연구가 활발히 진행 되고 있다. 본 연구에서는 염료 감응 태양전지(DSCs)의 특성 분석을 위해 $TiO_2$ 두께를 $20{\mu}m$로 지정하고 면적을 $0.5{\times}0.5\;Cm^2$에서 $1.5{\times}1.5\;Cm^2$까지 증가시켜 개방전압($V_{oc}$), 단락전류밀도($J_{sc}$), 충진률 FF(%), 광전변환효율(${\eta}$)등의 특성을 분석해 보았다. 또한 염료가 흡착되는 시간을 12시간과 24시간으로 변화시켜 최적의 특성을 가지는 DSCs를 연구해 보았다.

• Korean Journal of Materials Research
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• v.24 no.11
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• pp.604-609
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• 2014

The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Journal of Korean Society on Water Environment
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• v.32 no.5
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• pp.403-409
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• 2016

In this study, a TiO₂ nanotube was grown on a titanium plate by using anodic oxidation method for the evaluation of TiO₂ nanotube morphology. The TiO₂ nanotube was grown in an electrolyte containing ethylene glycol, 0.2 wt% of NH₄F and 2 vol% of H₂O. Applied voltage varied from 30 to 70 V and the morphology of the TiO₂ nanotube was observed. After anodization, a TiO₂ nanotube plate was immersed in 35℃ ethanol for 24 hours. Anatase and rutile crystal forms of TiO₂ nanoutbe were observed after annealing. 4-chrolobenzoic acid, a probe compound for OH radicals, was dissolved in H₂O in order to measure the OH radical. Liquid chromatography was used to check the concentration of the 4-chrolobenzoic acid. The OH radical generation by TiO₂ nanotube plate was proportionate to the length of the TiO₂ nanotube. Furthermore, when the number of TiO₂ nanotube plate increased, the OH radical generation increased as well.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.