• Journal of electromagnetic engineering and science
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• v.14 no.2
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• pp.61-67
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• 2014

This paper presents a zero-IF CMOS RF receiver, which supports three channel bandwidths of 5/10/40MHz for LTE-Advanced systems. The receiver operates at IMT-band of 2,500 to 2,690MHz. The simulated noise figure of the overall receiver is 1.6 dB at 7MHz (7.5 dB at 7.5 kHz). The receiver is composed of two parts: an RF front-end and a baseband circuit. In the RF front-end, a RF input signal is amplified by a low noise amplifier and $G_m$ with configurable gain steps (41/35/29/23 dB) with optimized noise and linearity performances for a wide dynamic range. The proposed baseband circuit provides a -1 dB cutoff frequency of up to 40MHz using a proposed wideband OP-amp, which has a phase margin of $77^{\circ}$ and an unit-gain bandwidth of 2.04 GHz. The proposed zero-IF CMOS RF receiver has been implemented in $0.13-{\mu}m$ CMOS technology and consumes 116 (for high gain mode)/106 (for low gain mode) mA from a 1.2 V supply voltage. The measurement of a fabricated chip for a 10-MHz 3G LTE input signal with 16-QAM shows more than 8.3 dB of minimum signal-to-noise ratio, while receiving the input channel power from -88 to -12 dBm.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.551-556
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• 2013

AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{\times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{\circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{\circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.

• Journal of The Korean Astronomical Society
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• v.48 no.6
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• pp.357-364
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• 2015

We observe ten known 22GHz H₂O maser galaxies during February 19-22, 2011 using the 21 m Tamna telescope of the Korean VLBI Network and a new wide-band digital spectrometer. Simultaneously we searched for 43GHz SiO v = 1, 2, J = 1-0 maser emission. We detect H₂O maser emission towards five sources (M 33, NGC 1052, NGC 1068, NGC 4258, M 82), with non-detections towards the remaining sources (UGC 3193, UGC 3789, Antennae H₂O-West, M 51, NGC 6323) likely due to sensitivity. Our 22GHz spectra are consistent with earlier findings. Our simultaneous 43GHz SiO maser search produced non-detections, yielding - for the first time - upper limits on the 43GHz SiO maser emission in these sources at a 3 σ sensitivity level of 0.018K-0.033K (0.24 Jy-0.44 Jy) in a 1.75 km s⁻¹ velocity resolution. Our findings suggest that any 43GHz SiO masers in these sources (some having starburst-associated H₂O kilomasers) must be faint compared to the 22GHz H₂O maser emission.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.386-389
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• 2009

The electrical characteristics and annealing effects of tunneling dielectrics stacked with $SiO_2$ and $Si_{3}N_{4}$ were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_{3}N_{4}/SiO_2/Si_{3}N_{4}$ (NON), $SiO_2/Si_{3}N_{4}/SiO_2$ (ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS (metal-oxide-semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field. Furthermore, the increased tunneling current through engineered tunneling barriers related to high speed operation can be achieved by annealing processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.131-131
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• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.3C
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• pp.239-247
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• 2003

This paper presents a dual-rate (2.4/4.0 kbps) Improved Harmonic-CELP(IHC) speech coder based on the EHC(Efficient Harmonic-CELP) which was presented by the authors. The proposed IHC employs the harmonic coding for voiced and the CELP for unvoiced segments. In the IHC, an initial voiced/unvoiced estimate is obtained by the pitch gain and energy. Then, the final V/UV mode is decided by using the frame energy contour. A new harmonic estimation combining peak picking and delta adjustment provides a more reliable harmonic estimation than that in the EHC. In addition, a noise mixing scheme in conjunction with an improved band voicing measurement provides the naturalness of the synthesized speech. To demonstrate the performance of the proposed IHC coder, the coder has been implemented and compared with the 2.0/4.0 kbps HVXC(Harmonic excitation Vector Coding) standardized by MPEG-4. Results of subjective evaluation showed that the proposed IHC coder and produce better speech quality than the HVXC, with only 40% complexity of the HVXC.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.113-118
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• 2019

In this study, we investigated the growth of single-crystallinity α-Ga₂O₃ thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga₂O₃. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga₂O₃ thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 10⁴ cm^-2.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.141.1-141.1
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• 2012

CIBER (Cosmic Infrared Background ExpeRiment) is a sounding-rocket borne experiment which is designed to find the evidence of the First stars (Pop.III stars) in the universe. They are expected to be formed between the recombination era at z ~ 1100 and the most distant quasar (z ~ 8). They have never been directly detected due to its faintness so far, but can be observed as a background radiation at around $1{\mu}m$ which is called the Cosmic Near-Infrared Background (CNB). The CIBER is successfully launched on July 10, 2010 at White Sands Missile Range, New Mexico, USA. It consists of three kinds of instruments. One of them is a LRS (Low Resolution Spectrometer) which is a refractive telescope of 5.5 cm aperture with spectral resolution of 20 ~ 30 and wavelength coverage of 0.7 to $2.0{\mu}m$ to measure the spectrum of the CNB. Since LRS detects not only CNB but also stellar components, we can study their spectral features with the broad band advantage especially at around $1{\mu}m$ which is difficult at ground observations because of the atmospheric absorption by water vapor. I identified around 300 stars from observed six fields. If we can classify their spectral types with SED fitting, we can study their physical conditions of the stellar atmosphere as well as making a stellar catalogue of continuous stellar spectrum.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.47-50
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• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.7
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• pp.998-1009
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• 1999

In this paper, a microstrip aperture-patch antenna and a microstrip ring antenna, which have single microstrip line feeding systems for the circular polarization, are designed, and experimental results are presented at X-band. The microstrip aperture-patch antenna is characterized by its wide operating frequency range, and the microstrip ring antenna is suitable for a basic radiator in the large array antenna due to its small size. Several design parameters for these antennas are considered and analyzed to improve antenna characteristics such as VSWR bandwidth and axial ratio. Initially, the sizes of the aperture and ring radiator are determined on a basis of the cavity model, then shapes of the patch within the aperture and the inner stub of the ring are optimized using Ensemble software. Measurement results show that the aperture-patch antenna has 25% of VSWR bandwidth and 1.2dB of axial ratio at the boresight, and the ring antenna has 6.7% of VSWR bandwidth and 1.6dB of axial ratio at the boresight.