• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.529-535
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• 1990

This paper describes the factors which control the impedance-relative humidity characteristics of the TiO2-V2O5 humidity sensor. To obtain the quantitative relationships between impedance and many manufacturing parameters such as V2O5mol%, the sintering time and temperature, various sets of samples are preared and tested. With changing relative hymidity from 20% to 80%, it is measrued that the corresponding capacitance and impedance from the semicircles which complex impedance plots make. As a result we found that the impedance-relative humidity characteristics are mainly controlled by the doping amount of V2O5 total pore volume and bulk resistence of the elements. We can assume the equivalent circuits of each samples and finally control the sintering time to get a linear humidity impedance response curve which plays an important role in device making. 4mol% V2O5-TiO2 specimen sintered at 90$0^{\circ}C$ for 10min. show liear log(Z) vs. RH characteristics and 10mol% V2O5-TiO2 specimen sintered at the same temp. for 20min. show linear (Z) vs. RH.

• Journal of Korean Society for Atmospheric Environment
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• v.15 no.6
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• pp.791-797
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• 1999

The activity of domestic pigment titania$(TiO_2)$ impregnated with vanadia$(V_2O_5)$ was investigated in the laboratory microreactor. The meta-titanic acid$(TiO(OH)_2)$ which was produced at Hankook Titanium was selected as the precursor for support. The domestic pigment $TiO_2$ showed higher activity in the reduction of NO with $NH_3$ than the foreign commercial $TiO_2$. $WO_3$ were added to domestic $V_2O_5/TiO_2$ catalytic system to improve the catalytic activity at higher reaction temperature between 400~50$0^{\circ}C$ Also, the deactivation of domestic $V_2O_5/TiO_2$ and $WO_3-V_2O_5/TiO_2$ catalyst by $SO_2$ and $H_2O$ was investigated.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.8
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• pp.14-18
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• 2018

Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.6
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• pp.1012-1016
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• 2008

[ $TiO_2-V_2O_5$ ] sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mole, 0.03mole, 0.05mole into $TiO_2$ sol. As a results of crystalline properties, $V_2O_5$ peaks were not found in spite of $V_2O_5$ additive. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping. Capacitance of thin films increased with increasing heat treatment temperature and it increased largest at $700^{\circ}C$. Capacitance of thin films decreased with increasing $V_2O_5$ additive and it increased largest at 0.01mole. Because adsorption time and desorption time of thin films was about 2 minutes 40 seconds and about 3 minutes 40 seconds respectively, adsorption time was faster about 1 minutes than desorption time.

• Journal of the Korean Applied Science and Technology
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• v.35 no.1
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• pp.163-172
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• 2018

In this study, selective catalytic reductions (SCR) of NO commercial catalysts were used to investigate the effect of ammonia gasification from urea solution. The effects of catalytic chemical composition on the reaction temperature and space velocity were studied. $V_2O_5/TiO_2$ catalysts, which are widely used as SCR catalysts for removal of nitrogen oxides, have better ammonia formation compare to $TiO_2$ and $WO_3-V_2O_5/TiO_2$ catalysts. The $TiO_2$ catalyst not supporting the active metal was not affected by the space velocity as compared with the catalyst supporting $V_2O_5$ or $WO_3-V_2O_5$. The active metal supported catalysts decreased in the ammonia formation as the space velocity increased.

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.613-618
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• 2009

We designed new compositions for lead free and low temperature sealing glass frit of $ZnO-V_2O_5-P_2O_5$ system, which can be used for PDP (Plasma Display Panel) or other electronic devices. The $ZnO-V_2O_5-P_2O_5$ system can be used as a sealing material at temperatures even lower than 430$^{\circ}C$. This system, however, showed lower bonding strength with glass substrate compared to commercialized Pb based sealing materials. So, we added $TiO_2$ as a promoter for bonding strength. We examined the effect of $TiO_2$ addition on sealing behaviors of $ZnO-V_2O_5-P_2O_5$ glasses with the data for flow button, wetting angle, temporary & permanent residual stress of glass substrate, EPMA analysis of interface between sealing materials and glass substrate, and bonding strength. As a result, sealing characteristics of $ZnO-V_2O_5-P_2O_5$ system glasses were improved with $TiO_2$ addition, but showed a maximum value at 5 mol% $TiO_2$ addition. The reason for improved bonding characteristics was considered to be the chemical interaction between glass substrate and sealing glass, and structural densification of sealing glass itself.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.690-695
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• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.975-978
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• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.350-353
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• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.567-572
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• 1998

The crystalline structure of $LaTi_{0.8}V_{0.2}O_3$ solid solutions, prepared by arc-melting palletized mixtures of predried $La_2O_3,\;V_2O_3,\;TiO_2$, and Ti, was investigated by transmission electron microscopy and computer image simulation. Computer image simulations were performed by the multislice method for a wide range of sample thickness and defocusing value. The structure of $LaTi_{0.8}V_{0.2}O_3$ was determined as a $GdFeO_3$-type orthorhombic $(a\approx5.58{\AA},\;b\approx7.89{\AA},\;and\;c\approx5.58{\AA})$ with a space group $P_{nma-}$. No evidence of ordering of Ti and V atoms in $SaTi_{0.8}V_{0.2}O_3$ was found.