• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.20-20
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• 2008

최근 LEDs가 동일 효율의 전구에 비해 에너지 절감 효과 크며 신뢰성이 뛰어나다기 때문에 기존 광원을 빠르게 대체해 나가고 있다. 특히 자외선 파장을 가지는 LEDs는 발열이 낮아 냉각장치가 필요 없으며, 수명이 길어 기존 UV lamp에 비해 많은 장점을 가지고 있기 때문에 많은 관심을 밭고 있다. 그럼에도 불구하고 자외선 LEDs는 제조 단가가 높고 power가 낮아 소요량이 많은 등 아직 해결해야 할 부분이 많기 때문에 이를 해결하기 위해 여러가지 재료와 다양한 구조가 고려되고 있다. 그 중 ZnO는 II-VI족 화합물 반도체로써 UV영역의 넓은 밴드갭(3.37eV)을 가지는 투명한 재료이다. 특히 ZnO는 60meV의 큰 엑시톤 결합에너지를 가지며, 가시광 영역에서 높은 투과율을 가지고, 상온에서 물리적, 화학적으로 안정하기 때문에 UV sensor, UV laser, UV converter, UV LEDs 등 광소자 분야에서 연구가 활발히 진행되고 있다. ZnO가 광소자의 발광재료로써 높은 효율을 얻기 위해서는 결정성을 높여 내부 결함을 감소시키며, 발광 면적을 높일 수 있는 구조가 요구된다. 특히 MOCVD 법으로 성장한 나노막대는 에피성장되어 높은 결정성을 기대할 수 있으며, 성장 조건을 조절함으로써 나노막대의 aspect ratio와 밀도 제어할 수 있기 때문에 표면적을 효과적으로 넓혀 높은 발광효율을 얻을 수 있다. 본 실험에서는 MOCVD 법으로 실리콘과 사파이어 기판 위에 다양한 성장 온도를 가진 나노구조를 성장 시키고 온도에 따른 형상 변화와 특성을 평가하였다. ZnO 의 성장온도가 약 $360^{\circ}C$ 일 때, 밀도가 조밀하고 기판에 수직 배열한 균일한 나노막대가 성장되었으며 우수한 결정성, 광학적 특성이 나타남을 SEM, TEM, PL, XRD를 사용하여 확인하였다.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.204-209
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• 2014

The electrodeposition of ZnO nanorods was performed on ITO glass. The optimization of two process parameters (solution temperature and growth time) has been studied in order to control the orientation, morphology, density, and growth rate of ZnO nanorods. The structural and optical properties of ZnO nanorods were systematically investigated by using field-emission scanning electron microscopy, X-ray diffractometer, and photoluminescence. Commonly, the results of the structural property show that hexagonal ZnO nanorods with wurtzite crystal structures have a c-axis orientation, and higher intensity for the ZnO (002) diffraction peaks. Furthermore, the nanorods length increased with increasing both the solution temperature and the growth time. The results of the optical property show a strong UV (3.28 eV) peaks and a weak visible (1.9~2.4 eV) bands, the intensity of UV peaks was increased with increasing both the solution temperature and the growth time. Especially, the UV peak for growth of nanorods at $75^{\circ}C$ blue-shift than different temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3586-3590
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• 2013

We present here an efficient and simple method for preparation of highly active heterogeneous ZnO photocatalyst (graphene oxide-zinc oxide: GO-ZnO), specifically by deposition of ZnO nanoparticles onto thiolated GOs. The resultant GO-ZnO sample was characterized by TEM, XRD, Auger, XPS, and Raman measurements, revealing that the size-similar and quasi-spherical ZnO nanoparticles were anchored to the thiolated GO surfaces. The average particle diameter was about 2.5 nm. In the photodegradation of methylene blue (MB) under ultraviolet (UV) light, GO-ZnO exhibited remarkably enhanced photocatalytic efficiency compared with thiolated GO and pure ZnO particles. This strong photocatalytic performance of GO-ZnO can be attributed to the suppression of electron recombination and the enhancement of mass transportation. The results showed that thiolated GO is the preferable supporting material.

• Applied Chemistry for Engineering
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• v.28 no.2
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• pp.245-251
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• 2017

In this study, ZnO, which is widely known as a non $TiO_2$ photocatalyst, was synthesized using coprecipitation method and Ag was added in order to improve the catalytic performance. The physicochemical characteristics of the synthesized ZnO and Ag/ZnO particles were checked using X-ray diffraction (XRD), UV-visible spectroscopy, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), photoluminescence (PL), and photocurrent measurements. The performance of catalysts was tested by $H_2$ production using the photolysis of $H_2O$ with MeOH. By adding Ag which plays a role as an electron capture on the ZnO catalyst, the performance increased due to the recombination of excited electrons and holes. In particular, $8.60{\mu}mol\;g^{-1}$ $H_2$ was produced after 10 h reaction over the 0.50 mol% Ag/ZnO.

• Journal of the Korean institute of surface engineering
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• v.54 no.6
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• pp.340-347
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• 2021

Among various metal oxide semiconductors, ZnO has an excellent electrical, optical properties with a wide bandgap of 3.3 eV. It can be applied as a photocatalytic material due to its high absorption rate along with physical and chemical stability to UV light. In addition, it is important to control the morphology of ZnO because the size and shape of the ZnO make difference in physical properties. In this paper, we demonstrate synthesis of size-controlled ZnO tetrapods using an atmospheric pressure plasma system. A micro-sized Zn spherical powder was continuously introduced in the plume of the atmospheric plasma jet ignited with mixture of oxygen and nitrogen. The effect of plasma power and collection sites on ZnO nanostructure was investigated. After the plasma discharge for 10 min, the produced materials deposited inside the 60-cm-long quartz tube were obtained with respect to the distance from the plume. According to the SEM analysis, all the synthesized nanoparticles were found to be ZnO tetrapods ranging from 100 to 600-nm-diameter depending on both applied power and collection site. The photocatalytic efficiency was evaluated by color change of methylene blue solution using UV-Vis spectroscopy. The photocatalytic activity increased with the increase of (101) and (100) plane in ZnO tetrapods, which is caused by enhanced chemical effects of plasma process.

• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.140-144
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• 2018

$ZnO/TiO_2$ nanocomposites were synthesized via a modified sol-gel technique by incorporating 30 and 70 wt% $TiO_2$ nanopowder into a ZnO sol-gel matrix. Zinc acetate dihydrate was used as the ZnO precursor and de-ionized water as the solvent, while titanium oxysulfate was employed for the synthesis of $TiO_2$ nanopowder. The synthesized $ZnO/TiO_2$ nanocomposites were characterized by x-ray diffraction, UV-vis spectroscopy, scanning electron microscopy, and transmission electron microscopy. The $ZnO/TiO_2$ nanocomposites showed both the ZnO (wurtzite) and $TiO_2$ (anatase) phases. The average ZnO crystallite size of the $ZnO/TiO_2$ nanocomposites was found to be about 26.3 nm. The TEM results confirmed that spherical $TiO_2$ particles were embedded in the ZnO matrix. $TiO_2$ particles attached onto the rod-like ZnO particles were also observed. The $ZnO/TiO_2$ nanocomposites exhibited optical absorption properties superior to those of pure ZnO and $TiO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.420-420
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• 2007

ZnO 나노막대는 산화물 반도체로서 넓은 밴드캡 (3.37eV)을 가진 반도체이며, 테라급의 전계 효과 트랜지스터(FET), 대기오염물질 모니터링 센서, 태앙전지용 전극, UV 발광소자, 전계방출 디스플레이의 팀 등 나노기술 전반에 활용해 최근 각광을 받고 있는 물질이다. 최근 디바이스 응용의 효율을 높이기 위한 방편으로 나노막대에서 박막으로의 연구가 활발하다. 본 실험은 MOCVD률 이용하여 p-si 기판위에 나노막대를 성장시킨 후 압력 및 온도 등의 공정변수를 조절하여 나노막대에서 박막으로 성장형태를 변화시켰다. SEM으로 1 차원 나노막대에서 2차원의 나노박막으로 성장이 된 ZnO 하이브리드 구조를 확인할 수 있었다. 또, PL장비를 이용해 ZnO의 UV영역의 파장을 확인할 수 있었다.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1109-1115
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• 2010

ZnO thin films were deposited on Si(100) substrates at low temperatures ($44^{\circ}C{\sim}210^{\circ}C$) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UV-absorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at $44^{\circ}C$ while stable crystallized ZnO films were deposited above $90^{\circ}C$. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than $90^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.59-59
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• 2003

ZnO는 상온에서 3.37 eV의 넓은 밴드갭을 가지는 직접천이형 반도체이다. 상온에서 60 meV의 큰 엑시톤 결합에너지를 가짐으로 인해 엑시톤 재결합에 의한 강한 UV 레이저 발진효과를 기대할 수 있다. 이러한 장점을 갖는 ZnO 박막을 이용하여 광소자 등에 응용하기 위하여 양질의 ZnO 박막성장이 필수적이며, 이를 위해 MBE, MOCVD, PLD, rf magnetron sputtering 등 다양한 증착방법을 통한 연구결과가 보고되고 있다. 또한 p형 불순물인 As과 N 도핑 및 Ga과 N의 co-doping 방법 등을 통하여 p형 ZnO 박막을 제조하였음이 보고되고 있으나 재현성 문제 등으로 인해 계속적인 연구가 진행되고 있다. 본 연구에서는 MOCVD를 이용하여 A1$_2$O$_3$(0001) 기판 위에 ZnO 박막을 성장시켰다. Zn 전구체로 DEZn을 사용하였으며, 산소 source로 $O_2$를 사용하였다. 증착온도, Ⅵ/II 비율, 반응기 압력 등 MOCVD의 중요한 공정변수들의 체계적인 변화에 따른 박막성장 양상을 조사하였다. 증착 조건에 따라 ZnO 입자의 모양이 주상(column), nano-rod, nano-needle, nano-wire 등으로 급격하게 변화됨을 확인하였으며, 이러한 입자의 모양과 결정성장 방향 및 광학적 특성과의 상관관계의 해석을 시도하였다.